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Results for “CONTACT RESISTANCE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Thermally stable, low resistance contact systems for use with shallow junction p(+) nn(+) and n(+)pp(+) InP solar cells

Two contact systems for use on shallow junction InP solar cells are described. The feature shared by these two contact systems is the absence of the metallurgical intermixing that normally takes place between the semiconductor and the contact metallization during the sintering process. The n(+)pp(+) cell contact system, consisting of a combination of Au and Ge, not only exhibits very low resistance in the as-fabricated state, but also yields post-sinter resistivity values of 1(exp -7) ohms-sq cm, with effectively no metal-InP interdiffusion. The n(+)pp(+)cell contact system, consisting of a combination of Ag and Zn, permits low resistance ohmic contact to be made directly to a shallow junction p/n InP device without harming the device itself during the contacting process.

Weizer, V. G.↗
NASA NTRS1994

Modeling Thermal Contact Resistance

One difficulty in using cryocoolers is making good thermal contact between the cooler and the instrument being cooled. The connection is often made through a bolted joint. The temperature drop associated with this joint has been the subject of many experimental and theoretical studies. The low temperature behavior of dry joints have shown some anomalous dependence on the surface condition of the mating parts. There is also some doubts on how well one can extrapolate from the test samples to predicting the performance of a real system. Both finite element and analytic models of a simple contact system have been developed. The model assumes (a) the contact is dry (contact limited to a small portion of the total available area and the spaces in-between the actual contact patches are perfect insulators), (b) contacts are clean (conductivity of the actual contact is the same as the bulk), (c) small temperature gradients (the bulk conductance may be assumed to be temperature independent), (d) the absolute temperature is low (thermal radiation effects are ignored), and (e) the dimensions of the nominal contact area are small compared to the thickness of the bulk material (the contact effects are localized near the contact). The models show that in the limit of actual contact area much less than the nominal area (a much less than A), that the excess temperature drop due to a single point of contact scales as a(exp -1/2). This disturbance only extends a distance approx. A(exp 1/2) into the bulk material. A group of identical contacts will result in an excess temperature drop that scales as n(exp -1/2), where n is the number of contacts and n dot a is constant. This implies that flat rough surfaces will have a lower excess temperature drop than flat polished surfaces.

Kittel, Peter↗
NASA NTRS1977

Low-resistance contacts for GaAlAs/GaAs cells

Bimetallic contacts utilizing palladium and aluminum, gold, silver, or chromium, are used in reduction of series resistance in GaAlAs/GaAs solar cells, thereby improving cell reliability.

Hovel, H. J.↗
NASA NTRS1974

The role of thermal contact resistance in pyrotechnic ignition

This paper describes a pyrotechnic ignition model based on transient heat conduction from a heated bridgewire to a pyrotechnic that is placed in contact with it. The boundary condition used at the interface was a thermal contact conductance estimated at 31,200 W per sq m-K between the wire and the pyrotechnic. Ignition was assumed to occur when a 2.5-micron layer of pyrotechnic next to the bridgewire reached a critical ignition temperature. The times to ignition predicted by this model for constant current firings were in good agreement with experimentally observed times to fire at 3.5- and 5-ampere current levels and ambient temperatures from 144 K to 366 K.

Sernas, V.↗
NASA NTRS2019

An Analytic Model for Estimating the First Contact Resistance Needed to Avoid Damaging ESD During Spacecraft Docking in GEO

NASA’s Gateway program will involve spacecraft (s/c) docking in the outer radiation belt in order to transfer Gateway elements between s/c for transport to lunar orbit. The charging of these s/c to different potentials prior to docking raises the possibility of a damaging electrostatic discharge (ESD) at the time of first contact between the s/c. A proposed mitigation strategy is for first contact to occur prior to docking through a resistor with resistance R that would lower the potential difference at an optimal rate to a sufficiently low value to prevent ESD damage. The coupling of s/c by a resistor can be modeled by SPIS, but for realistic two s/c models SPIS can take hours to simulate the evolution of the s/c surface charges and potentials to an equilibrium state. Our objective is to develop a simpler model of s/c resistive coupling that runs orders of magnitude faster while providing useful first design estimates of the time variation of the s/c potentials, current through the resistor, and how these vary with R and s/c configuration This configuration is defined by the relative separation and orientation of the s/c, and their solar illumination. The configuration and geometry of the s/c determine their capacitive coupling. The s/c capacitances are computed using Nascap-2K. This poster presents the first version of such a model, and initial tests.

Goodman, Michael L.↗
NASA NTRS2019

An Analytic Model for Estimating the First Contact Resistance Needed to Avoid Damaging ESD During Spacecraft Docking in GEO

NASA’s Gateway program is to involve spacecraft (s/c) docking in the outer radiation belt in order to transfer Gateway elements between s/c for transport to lunar orbit. The charging of these s/c to different potentials prior to docking raises the possibility of a damaging electrostatic discharge (ESD) at the time of first contact between the s/c. A proposed mitigation strategy is for first contact to occur prior to docking through a resistor with resistance R that would lower the potential difference at an optimal rate to a sufficiently low value to prevent a damaging ESD. The coupling of s/c by a resistor can be modeled by SPIS (Spacecraft Plasma Interaction System), but for realistic two s/c models SPIS can take hours to simulate the evolution of the s/c surface charges and potentials to an equilibrium state. Our objective is to develop a simpler model of s/c resistive coupling that runs orders of magnitude faster while providing useful first design estimates of the time variation of the s/c potentials, current through the resistor, and how these vary with R and s/c configuration. This configuration is defined by the relative separation and orientation of the s/c, and their solar illumination. The configuration and geometry of the s/c determine their capacitive coupling. The s/c capacitances are computed using Nascap-2K. This abstract and the associated poster describe the first version of such a model, and initial tests.

Goodman, Michael L.↗
DOE OSTI2026

Patterned, Low-Temperature Growth of Transition Metal Dichalcogenides for Low Resistance Raised Contacts

Transition metal dichalcogenide (TMD) monolayers are promising channel materials for next-generation electronic devices. A challenge is the high contact resistance between monolayer TMDs and metal contacts, especially for holes. Here, in this regard, raised source/drain contacts are promising. However, the direct, patterned growth of raised contacts at CMOS-compatible temperatures remains largely unresolved. We present plasma-free selenization and sulfurization of metal oxides at substrate temperatures down to 400 °C, compatible with back-end-of-line thermal budgets. To achieve growth at such temperatures, gas-phase chalcogen precursors are first thermally activated at 950 °C. Films grown on single-crystal monolayer TMDs exhibit high crystal quality, as confirmed by transmission electron microscopy. Raised contacts on WSe 2 monolayers fabricated using this approach yield a low hole contact resistance of 0.3 kΩ·μm after chemical doping. This process is shown to be applicable to growing various TMDs, including WS 2 , MoSe 2 , MoS 2 , PtSe 2 , and NbS 2 .

contact engineering↗
NASA NTRS1980

Significance of thermal contact resistance in two-layer, thermal-barrier-coated turbine vanes

The paper studies calculated and measured metal wall temperatures of uncoated vanes and the same vanes coated with a thermal barrier coating system of NiCrAlY bond and yttria-stabilized zirconia ceramic. It is shown that thermal contact between layers is negligible. The significance of data scatter and of published ceramic thermal conductivity values is discussed.

Liebert, C. H.↗