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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1972

Electron spin resonance of ultraviolet radiation induced defects in ZnO thermal control coating pigment.

Electron spin resonance measurements on variously treated zinc oxide powders reveal that the resonance signal at g = 1.956 is due to one electron trapped oxygen ion vacancy level, at a depth of (0.31 plus or minus 0.02) eV below the conduction band. The electrons at this level are delocalized. Schottky barrier influences nearly the entire bulk of the powder sample, and the bending of the bands caused by chemisorbed oxygen puts the vacancy level above the Fermi level almost through the entire bulk.

Mookherji, T.↗

NASA NTRS1973

Microwave properties of n-type InSb in a magnetic field between 4 and 300 K.

A two-band conduction model is used to determine the properties of shallow-type impurity semiconductors in the presence of microwave and dc magnetic fields as a function of temperature. Measurements using cavity perturbation techniques are employed to determine the properties of n-type InSb and theoretical and experimental results between 4 and 300 K are compared. The hot-electron effect was found to be insignificant between 77 and 300 K, and the scattering mechanisms are dominated by acoustic and polar modes over the same temperature range.-

Eldumiati, I. I.↗

NASA NTRS1975

Semiconductor electrolyte photovoltaic energy converter

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

Anderson, W. W.↗

NASA NTRS1976

III-V photocathode with nitrogen doping for increased quantum efficiency

An increase in the quantum efficiency of a 3-5 photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-5 isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, alpha without compensation of the acceptor dopant. A layer of a suitable 1-5, 1-6 or 1-7 compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.

James, L. W.↗

NASA NTRS1976

Molecular cluster theory for chemisorption of first row atoms on nickel /100/ surfaces

Self-consistent Hartree-Fock-Slater molecular cluster models for the chemisorption of first-row atoms on Ni(100) surfaces are presented. Energy levels and ground-state charge distributions are given for XNi5 clusters with the adatom X = H, C, N, O located in C4V symmetry at a fixed height of 2.0 au above the surface. The variation of properties with height was studied in detail for the case of oxygen. Theoretical results compare rather well with experimental photoelectron and energy-loss data. Local-densities-of-states diagrams are used to clarify the interaction between adsorbate levels and metal conduction bands.

Ellis, D. E.↗

NASA NTRS1977

Surface photovoltage due to photo-thermo-ionization of surface states - GaAs

Surface photovoltage spectroscopy was employed for studying the mechanism of subbandgap photoionization transitions from surface states in GaAs surfaces. It was found that the photoionization cross-section exhibits a maximum for a photon energy of about 0.9 eV. This finding indicates a photo-thermal mechanism of photovoltage, i.e., photo-induced transitions between surface state levels and the subsequent thermal ejection of electrons from the upper level into the conduction band.

Morawski, A.↗

NASA NTRS1980

Improved characterization of the Si-SiO2 interface

Refined quasi-static and conductance methods, based on effectively thin composite insulating layers, low-carrier-concentration bulk semiconductors, and low-level illumination, have been applied to an improved characterization of the (100) Si-SiO2 interface. Accurate measurement of both the total density of interface states and its major components as a function of energy in the forbidden gap have been made over four decades (10-billion to 100-trillion states/eV sq cm) on a single sample. The normal U-shaped density of states is resolved into separate valence- and conduction-band-derived contributions as well as impurity-derived contributions corresponding to concentrations on the order of 20 ppm at the interface.

Su, P.↗

NASA NTRS1981

GaAs-oxide interface states - A gigantic photoionization effect and its implications to the origin of these states

Gigantic photoionization was discovered on GaAs-oxide interfaces leading to the discharge of deep surface states with rates exceeding 1000 times those of photoionization transitions to the conduction band. It exhibits a peak similar to acceptor-donor transitions and is explained as due to energy transfer from photo-excited donor-acceptor pairs to deep surface states. This new process indicates the presence of significant concentrations of shallow donor and acceptor levels not recognized in previous interface models.

Lagowski, J.↗

NASA NTRS1981

Present growth technology of silicon germanium alloys and possible advantages of microgravity growth

The growth technology of Silicon-germanium (Si-Ge) alloys and the possible advantages of growth in microgravity is reviewed. The Si-Ge alloys have a continuous variation of bandgap energy from the germanium bandgap to the silicon bandgap. The unusual two slope behavior of Eg versus composition is due to the differences in the conduction band structure between Si and Ge. Below 17% (atomic), the germanium band structure dominates; and above it, the bands are "silicon like". It is found that the growth of Si-Ge alloys in microgravity is very attractive. In particular, the float zone method, in which a liquid zone of controlled starting composition, used to grow a large amount of useful alloy crystal. Large temperature gradients and relatively flat growth interfaces are necessary to obtain homogeneous crystal growth.

Stafsudd, O. M.↗

NASA NTRS1982

Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling

Thin-oxide (40-50 A) metal oxide semiconductor (MOS) structures are shown to exhibit, before large levels of electron tunnel injection, the near-ideal behavior predicted for a uniform trapezoidal barrier with thick-oxide properties. The oscillatory field dependence caused by electron-wave interference at the Si/SiO2 interface suggests an abrupt, one-monolayer barrier transition (approximately 2.5 A) consistent with earlier work. After tunnel injection of 10 to the 17th - 5 x 10 to the 18th electrons/sq cm, the barrier undergoes appreciable degradation, leading to enhanced tunneling conductance. Reproducible behavior is observed among different samples. This effect is found to be consistent with the generation of positive states in the region of the oxide near the Si/SiO2 interface (less than 20 A), where the tunneling electrons emerge into the oxide conduction band.

Maserjian, J.↗

NASA NTRS1982

Visible and near-IR spectral reflectance of geologically important materials: A short review

Examples of reflectance spectra are presented and discussed for various mineral groups including pyroxenes, olivene, phylosilicates, amphiboles, feldspars, oxides and hydroxides, carbonates, and mixtures of minerals. The physical sources of some spectral features are also reviewed such as charge transfer and conduction bands, crystal field absorptions, and vibrational absorptions.

Singer, R. B.↗

NASA NTRS1983

The electrical behavior of GaAs-insulator interfaces - A discrete energy interface state model

The relationship between the electrical behavior of GaAs Metal Insulator Semiconductor (MIS) structures and the high density discrete energy interface states (0.7 and 0.9 eV below the conduction band) was investigated utilizing photo- and thermal emission from the interface states in conjunction with capacitance measurements. It was found that all essential features of the anomalous behavior of GaAs MIS structures, such as the frequency dispersion and the C-V hysteresis, can be explained on the basis of nonequilibrium charging and discharging of the high density discrete energy interface states.

Kazior, T. E.↗

NASA NTRS1983

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Moriarty, J. A.↗

NASA NTRS1984

Semiconductor superlattice photodetectors

A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

Chuang, S. L.↗

NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Summers, C. J.↗

NASA NTRS1987

Tunneling-assisted impact ionization for a superlattice

Tunneling-assisted impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures is investigated and applied to a new superlattice structure. Multiquantum-well structures where the quantum-well regions are heavily doped and the undoped barrier regions are essentially insulating were considered. Incident hot electrons due to the applied electric field perpendicular to the heterointerface interact with the two-dimensional electrons confined to the quantum wells through Coulomb force. The resultant electrons can either have enough energy to get out of the wells or to tunnel through the triangular barriers. A new analytical approximation for the impact ionization rate is given which compares favorably with numerical results. The tunneling-assisted impact ionization rates and the ionization coefficients are calculated. It is shown that the tunneling effect reduces the ionization threshold and enhances the ionization rate significantly.

Chuang, S. L.↗

NASA NTRS1987

The variably spaced superlattice electroluminescent display - A new high efficiency electroluminescence scheme

A new, highly efficient dc electroluminescent display is presented. A variably spaced superlattice scheme is suggested herein which can produce high-energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias an order of magnitude less than the best dc electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer stack under bias and emerge into the active layer at an energy equal to the conduction-band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Brennan, K. F.↗

NASA NTRS1988

Performance Of Infrared-Detector Array

Report describes design, characteristics, and performance of Si:Sb integrated array of infrared detectors, sensitivity of which extends to wavelength of about 31 micrometer, improvement over 28-micrometer limit of current Si:As impurity-band-conduction devices. Also describes electronics and special Dewar system developed to test device at low temperature to reduce background noise.

Goebel, J. H.↗