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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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84 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Nanophotonic waveguide chip-to-world beam scanning

A seamless chip-to-world photonic interface enables broad advancements in optical ranging, display, communication, computation and quantum information science. The ideal solution enables two-dimensional scanning of a diffraction-limited beam from anywhere on a photonic integrated circuit to a large number of resolvable spots. Current beam-scanning technologies are limited by a fundamental trade-off: photonic-integrated-circuits with diffractive optics offer scalability but have poor mode quality, whereas inertially limited micromechanical scanners provide high-quality beams but lack scalable integration. Here we report a photonic ski-jump—a nanoscale waveguide monolithically integrated on a piezoelectric cantilever—to overcome these limitations. It passively curls ~90° out-of-plane within a less-than-0.1 mm 2 footprint, emits a submicrometre, broadband diffraction-limited beam, and exhibits kilohertz-rate mechanical resonances with quality factors of over 10,000. Fabricated in a volume complementary metal–oxide–semiconductor (CMOS) foundry, our device enables scalable two-dimensional beam scanning. Driven on-resonance at CMOS-level voltages, it achieves a footprint-adjusted spot rate of 68.6 mega spots s –1 mm–², exceeding state-of-the-art micro-electro-mechanical systems mirrors by more than 50-fold, which is sufficient for one million pixels at 100 Hz from an approximately 1.5 mm diameter footprint. We demonstrate full-colour image and video projection, and single-photon initialization and readout from silicon vacancy centres in diamond. Finally, by demonstrating uniformity across a 64 ski-jump array, we establish a pathway to achieving greater than one gigaspot resolution at kilohertz rates within a sub-5-cm-diameter footprint, creating a seamless optical pipeline between integrated photonic processors and the free-space world.

Displays↗
DOE OSTI2023

High spatial resolution direct conversion amorphous selenium X-ray detectors with monolithically integrated CMOS readout

Recent progress in the field of micron-scale spatial resolution direct conversion X-ray detectors for high-energy synchrotron light sources serve applications ranging from nondestructive and noninvasive microscopy techniques which provide insight into the structure and morphology of crystals, to medical diagnostic measurement devices. Amorphous selenium ( a -Se) as a wide-bandgap thermally evaporated photoconductor exhibits ultra-low thermal generation rates for dark carriers and has been extensively used in X-ray medical imaging. Being an amorphous material, it can further be deposited over large areas at room temperatures and at substantially lower costs as compared to crystalline semiconductors. Here, to address the demands for a high-energy and high spatial resolution X-ray detector for synchrotron light source applications, we have thermally evaporated a -Se on a Mixed-Mode Pixel Array Detector (MM-PAD) Application Specific Integrated Circuit (ASIC). The ASIC format consists of 128 × 128 square pixels each 150 μm on a side. A 200 μm a -Se layer was directly deposited on the ASIC followed by a metal top electrode. The completed detector assembly was tested with 45 kV Ag and 23 kV Cu X-ray tube sources. The detector fabrication, performances, Modulation Transfer Function (MTF) measurements, and simulations are reported.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Compact single-shot soft X-ray photon spectrometer for free-electron laser diagnostics

The photon spectrum from free-electron laser (FEL) light sources offers valuable information in time-resolved experiments and machine optimization in the spectral and temporal domains. We have developed a compact single-shot photon spectrometer to diagnose soft X-ray spectra. The spectrometer consists of an array of off-axis Fresnel zone plates (FZP) that act as transmission-imaging gratings, a Ce:YAG scintillator, and a microscope objective to image the scintillation target onto a two-dimensional imaging detector. This spectrometer operates in segmented energy ranges which covers tens of electronvolts for each absorption edge associated with several atomic constituents: carbon, nitrogen, oxygen, and neon. The spectrometer’s performance is demonstrated at a repetition rate of 120 Hz, but our detection scheme can be easily extended to 200 kHz spectral collection by employing a fast complementary metal oxide semiconductor (CMOS) line-scan camera to detect the light from the scintillator. This compact photon spectrometer provides an opportunity for monitoring the spectrum downstream of an endstation in a limited space environment with sub-electronvolt energy resolution.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Gas puff imaging on the TCV tokamak

We present the design and operation of a suite of Gas Puff Imaging (GPI) diagnostic systems installed on the Tokamak à Configuration Variable (TCV) for the study of turbulence in the plasma edge and Scrape-Off-Layer (SOL). These systems provide the unique ability to simultaneously collect poloidal 2D images of plasma dynamics at the outboard midplane, around the X-point, in both the High-Field Side (HFS) and Low-Field Side (LFS) SOL, and in the divertor region. We describe and characterize an innovative control system for deuterium and helium gas injection, which is becoming the default standard for the other gas injections at TCV. Extensive pre-design studies and the different detection systems are presented, including an array of avalanche photodiodes and a high-speed CMOS camera. First results with spatial and time resolutions of up to ≈2 mm and 0.5 µs, respectively, are described, and future upgrades of the GPI diagnostics for TCV are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Exploration of a Combined LIBS and LA-ICP-MS Approach for Apatite Characterisation

A combined laser‐induced breakdown spectroscopy (LIBS) and laser ablation‐inductively coupled plasma‐mass spectrometry (LA‐ICP‐MS) method is demonstrated for comprehensive apatite analysis. These measurements provide elemental imaging that can be used as a screening technique for chemical selection of grains for subsequent analysis (e.g., U‐Pb geochronology) or can be used to understand elemental distributions within a single grain that would have direct textural‐chemical implications (e.g., zoning patterns). Adding LIBS as a simultaneous measurement, to LA‐ICP‐MS U‐Pb geochronology, allowed for the direct determination of F (H and O show promise for future applications) in addition to major and trace elements of interest. Here, the quantitative measurements were validated against a series of apatites with known values and used to characterise a wide range of samples. Fluorine detection limits were determined to be as low as 70 μg g ‐1 F (broadband CMOS detector) and 4.2 μg g ‐1 F (ICCD detector). U‐Pb age dating was simultaneously collected by LA‐ICP‐MS with the quantitative elemental data from LIBS, providing a comprehensive method for geochronology.

Apatite↗
DOE OSTI2025

Low-Jitter Clock Receivers for Fast Timing Applications

Precision timing is a key requirement for emerging 4D particle tracking, Positron Emission Tomography (PET), beam and fusion plasma diagnostics, and other systems. Time-to-Digital Converters (TDCs) are commonly used to provide digital estimates of the relative timing between events, but the jitter performance of a TDC can be no better than the performance of the circuits that acquire the pulses and deliver them to the TDC. Several clock receiver and distribution circuits were evaluated, and a differential amplifier with resistive loads driving a pseudo-differential clock distribution network, developed using design guidelines for radiation tolerance and cryogenic compatibility, was fabricated as part of three prototypes: an analog front-end testbed chip for high-precision timing pixel readout, a dedicated TDC evaluation chip, and a Low-Gain Avalanche Detector (LGAD) readout circuit. Based on TDC measurements of the prototypes, we infer that the jitter added by the clock receiver and distribution circuits is less than 2.25 ps-rms. This performance meets the requirements of many future precision timing systems. The clock receiver and on-chip pseudo-differential driver were fabricated in commercial 28-nm CMOS technology and occupy 2288 µm 2 .

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Final Report for Grant

This is the final report for this project. The major objectives were to develop full models and standard cells of CMOS silicon photomultipliers (SiPM) for neutron detection applications. Specifically, the research seeks to replace photomultiplier tubes, used in neutron detection applications, with SiPMs containing integrated readout electronics fabricated in standard CMOS processes. The detectors improve on the detection efficiency, readout speed, resolution (sensitivity), and spatial resolution of current systems. In particular, this work involved collaboration with the instrument and detector group at ORNL who build detectors based on discrete commercially available PMTs and SiPMs. The SiPM detectors developed in this work are based on Perimeter Gated Single Photon Avalanche Diodes (PGSPAD). These devices have tunable breakdown voltage which affects other performance characteristics of the detectors. The ability of the detectors to have integrated readout and tune the noise floor and dynamic range in addition to offering a method for non-uniformity compensation in a compact form significantly impacts the imaging research field and includes the nuclear sciences field, circuits and systems field in addition to varied fields such as geography and biology/medicine.

42 ENGINEERING↗
DOE OSTI2021

A domain wall-magnetic tunnel junction artificial synapse with notched geometry for accurate and efficient training of deep neural networks

Inspired by the parallelism and efficiency of the brain, several candidates for artificial synapse devices have been developed for neuromorphic computing, yet a nonlinear and asymmetric synaptic response curve precludes their use for backpropagation, the foundation of modern supervised learning. Spintronic devices—which benefit from high endurance, low power consumption, low latency, and CMOS compatibility—are a promising technology for memory, and domain-wall magnetic tunnel junction (DW-MTJ) devices have been shown to implement synaptic functions such as long-term potentiation and spike-timing dependent plasticity. In this work, we propose a notched DW-MTJ synapse as a candidate for supervised learning. Using micromagnetic simulations at room temperature, we show that notched synapses ensure the non-volatility of the synaptic weight and allow for highly linear, symmetric, and reproducible weight updates using either spin transfer torque (STT) or spin–orbit torque (SOT) mechanisms of DW propagation. We use lookup tables constructed from micromagnetics simulations to model the training of neural networks built with DW-MTJ synapses on both the MNIST and Fashion-MNIST image classification tasks. Accounting for thermal noise and realistic process variations, the DW-MTJ devices achieve classification accuracy close to ideal floating-point updates using both STT and SOT devices at room temperature and at 400 K. Our work establishes the basis for a magnetic artificial synapse that can eventually lead to hardware neural networks with fully spintronic matrix operations implementing machine learning.

42 ENGINEERING↗
DOE OSTI2025

Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates

GeSn is a group-IV alloy with immense potential to advance microelectronics technology due to its intrinsic compatibility with existing Si CMOS processes. With a sufficiently high Sn composition, GeSn is classified as a direct bandgap semiconductor. Polycrystalline GeSn holds several additional advantages, including its significantly lower synthesis cost compared to its epitaxial counterpart, as well as the versatility to grow these films on a variety of substrates. Here, in this work, we present a polycrystalline thin-film GeSn phototransistor on a fused silica substrate with a Sn composition of ~10%, showing a photoresponse in the short-wave infrared wavelength range, critical for emerging sensing applications. This device shows a gate-tunable response, with responsivities approaching up to 1.7 mA/W with only a 30 nm-thick GeSn layer. Furthermore, phototransistors offer additional adaptability through gating, which allows for the reduction of dark current. This not only enhances the signal-to-noise ratio but also offers more flexible integration with various image sensor readout implementations using different substrates. The specific detectivity of this phototransistor is within an order of magnitude of those of previously reported GeSn photodetectors grown by molecular beam epitaxy and chemical vapor deposition, even though the absorber is 3 to 20× thinner while the electrode spacing for photocarrier transport is approximately 15× longer than the carrier diffusion length in this work, showing great potential benefits of extending similar device structures to epitaxial GeSn layers. As these GeSn phototransistors utilize a noncrystalline substrate, our work establishes a fundamentally more versatile path toward monolithically integrated GeSn-based photodetectors for next-generation multimodal sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Photon-to-Digital Converters for Neutron Imaging Instruments (Final Report)

Oak Ridge National Laboratory (ORNL) collaborated with the Université de Sherbrooke (UdeS) to design a modular and scalable tile of innovative digital photodetectors called Photon-to-Digital Converters (PDC) and the required subsystems to demonstrate the feasibility of large area single-photon detectors to support high-resolution, depth-of-interaction, fast neutron radiography based on scintillation detectors. The goal is to demonstrate the advantages of using PDC over conventional Silicon Photomultiplier (SiPM) for neutron imaging systems. The basic building blocks of analog SiPM and PDC are Single-Photon Avalanche Photodiodes (SPAD). The main difference between conventional SiPMs and PDCs, is in the fact that analog SiPMs sum the charge produced by individual SPAD passively, while in PDCs each SPAD is read out individually by an active electronic circuit. Hence, PDCs provide a direct photon-to-bit conversion where a logic “1” means that there was a detection in a given SPAD. Conversely, an analog SiPM requires a sophisticated preamplifier (current amplifiers or transimpedance amplifier) followed by a shaping amplifier and an analog-to-digital converter. Moreover, since the charge from each SPAD varies slightly, the passive sum of the analog SiPM will have signal fluctuations for the same amount of photon detected. This is one of many issues that is completely eliminated by individual one-to-one SPAD read out in PDCs. The large area required for scintillator readouts for neutron imaging is such that the output capacitance of a large area of SiPM arrays is very high. This creates a burden on the signal-to-noise optimization with respect to the power budget. For PDC, the power consumption is dictated by rate of the incident photon flux, or in photon-starved environments, the dark noise rate of the SPAD array. In other words, the power consumption in the absence of events is extremely low. Hence, the power consumption of a PDC read out system is much lower than its analog counterpart. Further, the large SiPM capacitance may introduce signal distortions on the scintillator fast rise or decay time with undesired effects on timing and pulse shape discrimination. The problem is absent in PDCs, as their readout is independent on device capacitance. UdeS is the world leader in 3D vertical integration of frontside illuminated SPAD arrays over CMOS readouts. These capabilities allow future production of “3D PDC” with maximum photosensitive fill factor and electronic functionalities tailored to the application. UdeS' vast knowledge of SPADs and CMOS design made the team an ideal collaborator in the development of large area high-resolution fast neutron radiography.

42 ENGINEERING↗
DOE OSTI2022

Metaplastic and energy-efficient biocompatible graphene artificial synaptic transistors for enhanced accuracy neuromorphic computing

CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or contain materials that are toxic to biological systems. In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. The BLAST devices leverage a dry ion-selective membrane, enabling long-term potentiation, with ~50 aJ/µm 2 switching energy efficiency, at least an order of magnitude lower than previous reports on two-dimensional material-based artificial synapses. The devices show unique metaplasticity, a useful feature for generalizable deep neural networks, and we demonstrate that metaplastic BLASTs outperform ideal linear synapses in classic image classification tasks. With switching energy well below the 1 fJ energy estimated per biological synapse, the proposed devices are powerful candidates for bio-interfaced online learning, bridging the gap between artificial and biological neural networks.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

GRAPH — an readout ASIC for large MCP based detectors

We present a programmable 16 channel, mixed signal, low power readout ASIC, having the project historically named Gigasample Recorder of Analog waveforms from a PHotodetector (GRAPH). It is designed to read large aperture single photon imaging detectors using micro channel plates for charge multiplication, and measuring the detector's response on crossed strips anodes to extrapolate the incoming photon position. Each channel consists of a fast, low power and low noise charge sensitive amplifier, which provides a myriad of coarse and fine programmable options for gain and shaping settings. Further, the amplified signal is recorded using, to our knowledge novel, the Hybrid Universal sampLing Architecture (HULA) ADC. A kind of mixed signal double buffer memory, that enables concurrent waveform recording, and selected event digitized data extraction. The sampling frequency is freely adjustable between few kHz up to 125 MHz, while the chip's internal digital memory holds a history 2048 samples for each channel, with a digital headroom of 12 bits. An optimized region of interest sample-read algorithm allows to extract the information just around the event pulse peak, while selecting the next event, thus substantially reducing the operational dead time. The chip is designed in 130 nm TSMC CMOS technology, and its power consumption is around 47 mW per channel.

47 OTHER INSTRUMENTATION↗