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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Intrinsically Slow Cooling of Hot Electrons in CdSe Nanocrystals Compared to CdS

The utilization of excited charge carriers in semiconductor nanocrystals (NCs) for optoelectronic technologies has been a long-standing goal in the field of nanoscience. Experimental efforts to extend the lifetime of excited carriers have therefore been a principal focus. To understand the limits of these lifetimes, in this work, we theoretically study the time scales of pure electron relaxation in negatively charged NCs composed of two prototypical materials: CdSe and CdS. We find that hot electrons in CdSe have lifetimes that are 5 to 6 orders of magnitude longer than in CdS when the relaxation is governed only by the intrinsic properties of the materials. Although these two materials are known to have somewhat different electronic structure, we elucidate how this enormous difference in lifetimes arises from relatively small quantitative differences in electronic energy gaps and phonon frequencies, as well as the crucial role of Fröhlich-type electron–phonon couplings.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Revealing the Phonon Bottleneck Limit in Negatively Charged CdS Quantum Dots

The capture of photoexcited hot electrons in semiconductors before they lose their excess energy to cooling is a long-standing goal in photon energy conversion. Semiconductor nanocrystals have large electron energy spacings that are expected to slow down electron relaxation by phonon emission, but hot electrons in photoexcited nanocrystals, nevertheless, cool rapidly by energy transfer to holes. This makes the intrinsic phonon-bottleneck-limited hot electron lifetime in nanocrystals elusive. For this work, we used a combination of theory and experiments to probe the hot-electron dynamics of negatively charged cadmium sulfide (CdS) colloidal quantum dots (QDs) in the absence of holes. Experiments found that these hot electrons cooled on a 100 ps time scale. Theoretical simulations predicted that pure phonon-bottleneck-limited hot electron cooling occurs on a similar time scale. This similarity suggests that the experimental measurements reflect the upper limit on the hot-electron lifetimes in these CdS QDs and the lower limit on the rates of processes that can harvest those hot electrons.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Optimizing photovoltaic performance in CuInS 2 and CdS quantum dot-sensitized solar cells by using an agar-based gel polymer electrolyte

Quantum dot-sensitized solar cells (QDSSCs) offer new opportunities to address the clean energy challenge, being one of the top candidates for third generation photovoltaics. Like dye-sensitized solar cells (DSSCs), QDSSCs normally use liquid electrolytes that suffer from issues such as evaporation or leakage. In this study a gel polysulfide electrolyte was prepared containing a natural polymer, agar, and was used as a quasi-solid-state electrolyte in solar cells to replace the conventional liquid electrolytes. This gel electrolyte shows almost the same conductivity as the liquid one. The solar cells were fabricated using CuInS 2 quantum dots (QDs), previously synthesized, deposited on TiO 2 photoanodes by electrophoretic deposition (EPD). CdS was deposited on TiO 2 by successive ionic layer adsorption and reaction (SILAR). Reduced graphene oxide (RGO)–Cu 2 S, brass, and thin film CuxS were used as counter electrodes. Compared to a liquid polysulfide water based electrolyte, solar cells based on CuInS 2 and CdS using gel polymer electrolyte (GPE) exhibit greater incident photon to current conversion efficiency (IPCE = 51.7% at 520 nm and 72.7% at 440 nm), photocurrent density (J sc = 10.75 and 13.51 mA cm -2 ), and power conversion efficiency (η = 2.97 and 2.98%) while exhibiting significantly enhanced stability. The solar cells employing the agar-based gel polymeric electrolyte are about a factor of 0.20 more stable than using a liquid electrolyte. The higher photovoltaic performance is due to the good conductivity and high wettability as well as the superior permeation capability of the gel electrolyte into the mesoporous matrix of a TiO 2 film

14 SOLAR ENERGY↗
DOE OSTI2016

Nonlinear optical enhancement induced by synergistic effect of graphene nanosheets and CdS nanocrystals

CdS nanocrystals are attached on graphene nanosheets and their nonlinear optical properties are investigated by picosecond Z-scan technique at 532 nm. We found that synergistic effect between the graphene and CdS makes a major enhancement on the nonlinear optical absorption of graphene/CdS nanohybrid in comparison with cooperative effect, and the synergistic improvement is restricted by nonradiative defects in hybrid. The synergistic mechanism involving the local field theory and charge transfer evolution is proposed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Scale and rate in CdS pressure-induced phase transition

Here, we describe recent efforts to improve our predictive modeling of rate-dependent behavior at, or near, a phase transition using molecular dynamics simulations. Cadmium sulfide (CdS) is a well-studied material that undergoes a solid-solid phase transition from wurtzite to rock salt structures between 3 and 9 GPa. Atomistic simulations are used to investigate the dominant transition mechanisms as a function of orientation, size and rate. We found that the final rock salt orientations were determined relative to the initial wurtzite orientation, and that these orientations were different for the two orientations and two pressure regimes studied. The CdS solid-solid phase transition is studied, for both a bulk single crystal and for polymer-encapsulated spherical nanoparticles of various sizes.

42 ENGINEERING↗
DOE OSTI2024

A Comparison of CdS and Zn(O,S) Buffer Layers in (Ag,Cu)(In,Ga)Se2 Solar Cells

Cu(In,Ga)Se 2 -based solar cells typically use a C dS buffer layer, even though its relatively low bandgap causes parasitic absorption. While alternatives to CdS have been explored in other studies, limited results have been shown for Ag-alloyed CIGS (ACIGS). In this study, ACIGS solar cells with both CdS and Zn(O,S) buffer layers were fabricated and compared for solar cell performance. The Zn(O,S) buffer slightly improved J sc through reduced absorption, although surface optimization is necessary. The Zn(O,S) ACIGS also had improved FF through reduced series resistance and ideality factor, which could be improved further through optimization. However, the Voc in the Zn(O,S) samples was reduced, likely due to increased bulk and front interface recombination. This study shows the promise of Zn(O,S) as a buffer layer in ACIGS solar cells and suggests pathways for further improvement.

absorption↗
DOE OSTI2018

Photoinduced Degradation of the Optical Properties of Colloidal Ag{sub 2}S and CdS Quantum Dots Passivated by Thioglycolic Acid

The results of studying degradation of the optical properties of colloidal Ag{sub 2}S and CdS quantum dots (QDs) 2.6–3.2 nm in size passivated by thioglycolic acid (TGA) are presented. The photoluminescence intensity of colloidal Ag{sub 2}S QDs has been found to decrease under laser irradiation at a wavelength of 445 nm, beginning with the effective power of 10 mW. The observed effect is interpreted as a photochemical reaction of formation of new nonradiative-recombination channels in Ag{sub 2}S QDs upon excitation. It is established for colloidal CdS QDs passivated by TGA that a decrease in the optical density in the entire absorption spectrum and the luminescence intensity is accompanied by precipitation of the colloidal particles in a cell and related to photodegradation of the passivating shell.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Electronic Excitation Energy Transfer in an Array of CdS Quantum Dots on a Quasi-Two-Dimensional Surface

The optical spectra of films composed of spherical silicon-dioxide particles coated with small-radius CdS quantum dots are recorded and analyzed. Large shifts of the absorption and photoluminescence bands are detected and studied in relation to the concentration of quantum dots and to the pumping density and wavelength. Analysis of the experimental data shows that the effects are due to electronic excitation energy transfer by particles through the mechanism of tunneling induced by a strong interaction between quantum dots. The results obtained at low pumping densities and different excitation wavelengths make it possible to describe the size distribution of CdS quantum dots. This distribution can be adequately approximated with a Gaussian function.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1971

Thermally restorable optical degradation effects in heat-treated Cu2S-CdS crystal heterojunctions.

We have shown that heat treatment alone does not produce appreciable degradation of the short-circuit current in Cu2S-CdS single-crystal photovoltaic heterojunctions. The degradation, which has been commonly observed, is the result of optically induced effects in the heat-treated cell, subsequent to the heat treatment. These optically induced effects can be correlated with photochemical changes induced in single crystals of CdS:Cd:Cu in which the density of Cu acceptors exceeds the density of excess-Cd donors. Major conclusions about the mechanism of the photovoltaic effect and heat-treatment processes can be drawn.

Kanev, S. K.↗
NASA NTRS1972

Photocapacitance effects at a Cu2S-CdS heterojunction.

The influence of trapped charge on the photovoltaic properties of an efficient Cu2S-CdS single-crystal heterojunction has been studied by a photocapacitance technique. For the nonheat-treated cell, a persistent increment in capacitance as high as 70% of the dark capacitance remained after illumination of the junction by band-gap light at 100 K. The additional capacitance is due to holes trapped in deep levels in the CdS depletion region near the interface. The trapped holes enhanced the 100 K photocurrent spectrum uniformly by a factor of 3 before heat treatment. After a 200 C heat treatment in air, the maximum trapped charge at 100 K enhanced the photocurrent by two orders of magnitude. The results are interpreted in terms of the tunneling through a conduction band spike of electrons photoexcited in the Cu2S.

Lindquist, P. F.↗
NASA NTRS1975

Ultrasonic coupling to optically generated charge carriers in CdS: Physical phenomena and applications

Phonon-charge carrier interactions are studied as well as ultrasonic resonators. Sensitivity enhancement factors predicted by one dimensional resonator theory are verified and several sensitive ultrasonic experimental techniques are developed. Measurements are reported of an anomalous sign reversal of the acoustoelectric voltage in a CdS resonator. Applications of CdS as an ultrasonic power detector are described.

Heyman, J. S.↗
NASA NTRS1975

Clusius-Dickel Separations (CDS): A new look at an old technique

The history, applications, and theoretical basis of the CDS technique are reviewed. The advantage to be realized by conduction of CDSs in low-g, space environments are deduced. The results are reported of investigations aimed at further improving CDS efficiencies by altering convective flow patterns. The question of whether multicellular flow or turbulence can introduce a new separation mechanism which would boost separation efficiencies at least an order of magnitude is considered. Results are presented and discussed.

Grodzka, P. G.↗
NASA NTRS1987

Growth rate of CdS by vapor transport in a closed ampoule

Vapor transport of CdS in a closed ampoule due to a temperature gradient was investigated. Comparisons between the theoretical and experimental growth rate for the following conditions were made: (1) with and without the presence of Ar gas, (2) convective contribution to the growth rate in the vertical and horizontal configurations, and (3) the effect of starting material composition on the growth rate. It was found that Cd reacts with fused silica ampoules and causes the contamination of CdS samples.

Su, Ching-Hua↗
NASA NTRS1990

Growth and characterization of CdS crystals

A growth method for the physical vapor transport of compound semiconductors in closed ampoules is described. With the unique techniques applied in the heat treatment of the starting materials and the temperature profiles provided by the three-zone translational furnace, large crystals of CdS have been grown successfully by the method at lower temperatures than previously used. Both unseeded and seeded growth have been investigated. The CdS crystals were examined using optical and scanning electron microscopies (SEM) to study the microstructure and the dislocation etch-pits. The crystals were further characterized by infrared (IR) and ultraviolet (UV) transmission measurements.

Su, Ching-Hua↗
NASA NTRS1997

EUV line intensities above the limb measured by CDS

The extreme ultraviolet (EUV) above the limb observed with the coronal diagnostic spectrometer (CDS) are discussed. The CDS spectra were obtained up to 0.3 solar radii above the east and west limb, and above the polar coronal holes. A large data set was acquired during the campaign in August 1996. The intensities of the chromospheric, transition region and coronal lines were derived as a function of the radial distance. The density-sensitive line ratios of Si IX 350/342 A and Si X 356/347 A were used to derive an average electron density. The temperature and density in the coronal holes were found to be lower than in the closed field regions.

Fludra, A.↗