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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Bipolar lead acid battery development

A modular bipolar battery configuration is under development at Johnson Control, Inc. (JCI) and the Jet Propulsion Laboratory (JPL). The battery design, incorporating proven lead acid electrochemistry, yields a rechargeable, high-power source that is light weight and compact. This configuration offers advantages in power capability, weight, and volume over conventional monopolar batteries and other battery chemistries. The lead acid bipolar battery operates in a sealed, maintenance-free mode allowing for maximum application flexibility. It is ideal for high-voltage and high-power applications.

Eskra, Michael↗
NASA NTRS1992

Design analysis of bipolar Li-TiS2 batteries

The present study uses an empirical model to assess the feasibility of using the Li-TiS2 bipolar battery for high power applications. Predicted performance outputs at a variety of conditions were calculated. The effects of the design parameters on the performance of bipolar Li-TiS2 batteries are presented. Specific energies greater than 150 Wh/kg can be achieved at low rates. Specific power levels in excess of 100 W/kg can be reached at high rates but with a reduction of the specific energy to less than 70 Wh/kg.

Shen, D. H.↗
NASA NTRS1994

Wavelength-Division Multiplexing Of Bipolar Digital Signals

In system, bipolar digital data transmitted by use of wavelength-division multiplexing on single optical fiber. Two different wavelengths used to transmit pulses signifying "positive" or "negative" bipolar digital data. Simultaneous absence of pulses at both wavelengths signifies digital "zero."

Gibbons, Ronnie D.↗
NASA NTRS2006

Experimental Analysis of Proton-Induced Displacement and Ionization Damage Using Gate-Controlled Lateral PNP Bipolar Transistors

The electrical characteristics of proton-irradiated bipolar transistors are affected by ionization damage to the insulating oxide and displacement damage to the semiconductor bulk. While both types of damage degrade the transistor, it is important to understand the mechanisms individually and to be able to analyze them separately. In this paper, a method for analyzing the effects of ionization and displacement damage using gate-controlled lateral PNP bipolar junction transistors is described. This technique allows the effects of oxide charge, surface recombination velocity, and bulk traps to be measured independently.

Ball, D. R.↗
NASA NTRS1999

Bipolar membranes with fluid distribution passages

The present invention provides a bipolar membrane and methods for making and using the membrane. The bipolar membrane comprises a cation-selective region, an anion-selective region, an interfacial region between the anion-selective region and the cation-selective region, and means for delivering fluid directly into the interfacial region. The means for delivering fluid includes passages that may comprise a fluid-permeable material, a wicking material, an open passage disposed within the membrane or some combination thereof. The passages may be provided in many shapes, sizes and configurations, but preferably deliver fluid directly to the interfacial region so that the rate of electrodialysis is no longer limited by the diffusion of fluid through the cation- or anion-selective regions to the interfacial region.

Hitchens, G. Duncan↗
NASA NTRS1981

Bipolar battery construction

A lightweight, bipolar battery construction for lead acid batteries in which a plurality of thin, rigid, biplates each comprise a graphite fiber thermoplastic composition in conductive relation to lead stripes plated on opposite flat surfaces of the plates, and wherein a plurality of nonconductive thermoplastic separator plates support resilient yieldable porous glass mats in which active material is carried, the biplates and separator plates with active material being contained and maintained in stacked assembly by axial compression of the stacked assembly. A method of assembling such a bipolar battery construction.

Rippel, Wally E.↗
NASA NTRS1985

Sealed bipolar multi-cell battery

A low maintenance battery comprises a sealed casing (102) having a cavity (204) receiving a stack (108) of monopolar and bipolar plates (110, 112) interspersed with mats (122) of fiberglass felt immobilizing electrolyte and forming a gas path for diffusion of oxygen to the negative electrode (112). The casing contains a single, resealable vent (202). During charging, oxygen generated at the positive plate (110) diffuses through the mat (122) and decomposes at the negative plate (112). The negative plate (112) has a larger capacity than the positive plate (110) to prevent evolution of hydrogen. Voltage potential is increased or decreased by placing one or more bipolar plates (120) in series relation between alternating positive and negative monopolar plates that are connected in parallel to respective positive and negative battery terminals (104, 106). The monoplates (110, 112) are connected in parallel to respective positive and negative battery terminals (104, 106) by way of bus plates (114, 116, 130, 132). The resealable vent permits operation by way of the oxygen cycle which prevents loss of electrolyte. The vent prevents invasion of oxygen from the ambient to discharge negative plates.

Rowlette, John J.↗
NASA NTRS2008

The Twist Limit for Bipolar Active Regions

We present new evidence that further supports the standard idea that active regions are emerged magnetic-flux-rope omega loops. When the axial magnetic twist of a cylindrical flux rope exceeds a critical amount, the flux rope becomes unstable to kinking, and the excess axial twist is converted into writhe twist by the kinking. This suggests that, if active regions are emerged omega loops, then (1) no active region should have magnetic twist much above the limit set by kinking, (2) active regions having twist near the limit should often arise from kinked omega loops, and (3) since active regions having large delta sunspots are outstandingly twisted, these arise from kinked omega loops and should have twist near the limit for kinking. From each of 36 vector magnetograms of bipolar active regions, we have measured (1) the total flux of the vertical field above 100 G, (2) the area covered by this flux, and (3) the net electric current that arches over the polarity inversion line. These three quantities yield an estimate of the axial magnetic twist in a simple model cylindrical flux rope that corresponds to the top of the active region s hypothetical omega loop prior to emergence. In all 36 cases, the estimated twist is below the critical limit for kinking. The 11 most twisted active regions (1) have estimated twist within a factor of approx.3 of the limit, and (2) include all of our 6 active regions having large delta sunspots. Thus, our observed twist limit for bipolar active regions is in good accord with active regions being emerged omega loops.

Moore, Ron↗
NASA NTRS2009

Composite Bipolar Plate for Unitized Fuel Cell/Electrolyzer Systems

In a substantial improvement over present alkaline systems, an advanced hybrid bipolar plate for a unitized fuel cell/electrolyzer has been developed. This design, which operates on pure feed streams (H2/O2 and water, respectively) consists of a porous metallic foil filled with a polymer that has very high water transport properties. Combined with a second metallic plate, the pore-filled metallic plates form a bipolar plate with an empty cavity in the center.

Mittelsteadt, Cortney K.↗
NASA NTRS2009

Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar Circuits

This presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.

Buchner, S.↗
NASA NTRS2006

Miniature Bipolar Electrostatic Ion Thruster

The figure presents a concept of a bipolar miniature electrostatic ion thruster for maneuvering a small spacecraft. The ionization device in the proposed thruster would be a 0.1-micron-thick dielectric membrane with metal electrodes on both sides. Small conical holes would be micromachined through the membrane and electrodes. An electric potential of the order of a volt applied between the membrane electrodes would give rise to an electric field of the order of several mega-volts per meter in the submicron gap between the electrodes. An electric field of this magnitude would be sufficient to ionize all the molecules that enter the holes. In a thruster-based on this concept, one or more propellant gases would be introduced into such a membrane ionizer. Unlike in larger prior ion thrusters, all of the propellant molecules would be ionized. This thruster would be capable of bipolar operation. There would be two accelerator grids - one located forward and one located aft of the membrane ionizer. In one mode of operation, which one could denote the forward mode, positive ions leaving the ionizer on the backside would be accelerated to high momentum by an electric field between the ionizer and an accelerator grid. Electrons leaving the ionizer on the front side would be ejected into free space by a smaller accelerating field. The equality of the ion and electron currents would eliminate the need for an additional electron- or ion-emitting device to keep the spacecraft charge-neutral. In another mode of operation, which could denote the reverse mode, the polarities of the voltages applied to the accelerator grids and to the electrodes of the membrane ionizer would be the reverse of those of the forward mode. The reversal of electric fields would cause the ion and electrons to be ejected in the reverse of their forward mode directions, thereby giving rise to thrust in the direction opposite that of the forward mode.

Hartley, Frank T.↗
NASA NTRS2009

Irradiation with molecular hydrogen as an accelerated total dose hardness assurance test method for bipolar linear circuits

High dose rate irradiation with hydrogen stress is proposed as an accelerated total dose test method for bipolar linear circuits. The method is validated across process and circuit technologies with five parts that are commonly used in space: a comparator (LM193 from National Semi-conductor), a voltage regulator (HSYE-117 RH from Intersil), a voltage reference (LT1019 from Linear Technology), a JFET input op amp (OP42 from Analog Devices) and a temperature transducer (AD590 from Analog Devices). The testing technique could rapidly establish an upper bound to the low dose rate response of parts in space and help with the part selection process in the design phase of a mission. The technology dependence and the viability of this technique are qualitatively explored using a physical model describing the dose rate response and the effect of hydrogen in bipolar technologies. The model uses four core processes: 1) space charge effects, 2) free electron/hole pair recombination, hole-hydrogen defect reactions in the oxides and 4) proton depassivation of dangling bonds at the Si/SiO2 interface. Radiation hardness assurance implications are discussed.

Pease, Ron↗
NASA NTRS2011

Modeling the effects of hydrogen and dose rate sensitivity in CMOS and bipolar technologies

Low dose rate (LDR) and high dose rate (HDR) experiments on field-oxide-field-effect-transistors (FOXFETs) and gated lateral pnp (GLPNP) bipolar transistors indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. This EF is also affect by the presence of hydrogen in the oxide. In this work, we developed a one dimensional (1-D) numerical calculations code to investigate the key mechanisms that describe the dose rate sensitivity and the effect of hydrogen on dose rate effects. We used a finite-difference methodology for the numerical calculations that allow for computing solutions for the densities of the mobile species as well as for the electrostatic potential at nodes contained within a mesh superimposed on the solution domain. Results from calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. In addition, calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar and CMOS devices results in good agreement with the dose rate calculations of interface trap buildup

Barnaby, Hugh↗
NASA NTRS1993

A Well-Defined Bipolar Outflow Shell

We report in this letter the results of a study of the massive bipolar outflow in the central region of the giant molecular cloud Monoceros R2.

bipolar outflow shell extended blue lobe of bipola↗
NASA NTRS2004

Magnetohydrodynamic models of bipolar knotty jet in henize 2-90

A remarkably linear, bipolar, knotty jet was recently discovered in Hen 2-90, an object classified as a young planetary nebula. Using two-dimensional, magnetohydrodynamic simulations, we investigate periodic variations in jet density and velocity as the mechanism for producing the jet and its knotty structures.

bipolar stars winds outflows jet density↗
NASA NTRS1994

Total Dose Effects in Conventional Bipolar Transistors

This paper examines various factors in bipolar device construction and design, and discusses their impact on radiation hardness. The intent of the paper is to improve understanding of the underlying mechanisms for practical devices without special test structures, and to provide (1) guidance in ways to select transistor designs that are more resistant to radiation damage, and (2) methods to estimate the maximum amount of damage that might be expected from a basic transistor design. The latter factor is extremely important in assessing the risk that future lots of devices will be substantially below design limits, which are usually based on test data for older devices.

Bipolar Devices Cassini Ionizing radiation effects↗