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Bi crystallizes in the tetragonal I4/mmm space group. The structure is one-dimensional and consists of two Bi ribbons oriented in the (0, 0, 1) direction. Bi is bonded in a linear geometry to two equivalent Bi atoms. Both Bi–Bi bond lengths are 2.86 Å.
Bi crystallizes in the orthorhombic Pmma space group. The structure is two-dimensional and consists of one Bi sheet oriented in the (0, 1, 0) direction. Bi is bonded in a distorted square co-planar geometry to four equivalent Bi atoms. There are two shorter (3.08 Å) and two longer (3.23 Å) Bi–Bi bond lengths.
Abstract Bi 2 SeO 2 is a promising n ‐type semiconductor to pair with p ‐type BiCuSeO in a thermoelectric (TE) device. The TE figure of merit zT and, therefore, the device efficiency must be optimized by tuning the carrier concentration. However, electron concentrations in self‐doped n ‐type Bi 2 SeO 2 span several orders of magnitude, even in samples with the same nominal compositions. Such unsystematic variations in the electron concentration have a thermodynamic origin related to the variations in native defect concentrations. In this study, first‐principles calculations are used to show that the selenium vacancy, which is the source of n ‐type conductivity in Bi 2 SeO 2 , varies by 1–2 orders of magnitude depending on the thermodynamic conditions. It is predicted that the electron concentration can be enhanced by synthesizing under more Se‐poor conditions and/or at higher solid‐state reaction temperatures ( T SSR ), which promote the formation of selenium vacancies without introducing extrinsic dopants. The computational predictions are validated through solid‐state synthesis of Bi 2 SeO 2 . More than two orders of magnitude increase are observed in the electron concentration simply by adjusting the synthesis conditions. Additionally, a significant effect of grain boundary scattering on the electron mobility in Bi 2 SeO 2 is revealed, which can also be controlled by adjusting T SSR . By simultaneously optimizing the electron concentration and mobility, a zT of ≈0.2 is achieved at 773 K for self‐doped n ‐type Bi 2 SeO 2 . The study highlights the need for careful control of thermodynamic growth conditions and demonstrates TE performance improvement by varying synthesis parameters according to thermodynamic guidelines.
Seven acentric sulfides Ba 6 (Cu x Z y )Sn 4 S 16 (Z = Mg, Mn, Zn, Cd, In, Bi, Sn) were grown by a high-temperature salt flux method. The crystal structures of the Ba 6 (Cu x Z y )Sn 4 S 16 (Z = Mg, Mn, Zn, Cd, In, Bi, Sn) compounds were determined by single-crystal X-ray diffraction with the aid of solid-state NMR spectroscopy. The Ba 6 (Cu x Z y )Sn 4 S 16 (Z = Mg, Mn, Zn, Cd, In, Bi) compounds are isostructural and crystallize in the Ba 6 Ag 4 Sn 4 S 16 structure type. The Sn-containing compound exhibits high structural similarity to Ba 6 (Cu x Z y )Sn 4 S 16 (Z = Mg, Mn, Zn, Cd, In, Bi) with the presence of an interstitial atomic position partially occupied by Sn atoms. The chemical bonding characteristics of Ba 6 (Cu 2.9 Sn 0.4 )Sn 4 S 16 were understood with electron localization function calculations coupled with crystal orbital Hamilton population calculations. The Ba–S and Cu–S interactions are dominantly ionic, but the Sn–S interactions consist of strong covalent bonding characteristics in Ba 6 (Cu 2.9 Sn 0.4 )Sn 4 S 16 . The monovalent Cu atoms, mixed with certain metals with various oxidation states, significantly shift the optical properties of the Ba 6 (Cu x Z y )Sn 4 S 16 (Z = Mg, Mn, Zn, Cd, In, Bi) compounds. This results in a good balance between the second-harmonic-generation (SHG) response and laser damage threshold (LDT). Ba 6 (Cu 1.9 Zn 1.1 )Sn 4 S 16 possesses a high SHG response and a high LDT of 2.8 × AGS and 3 × AGS, respectively. Here, a density functional theory calculation revealed that CuS 4 and SnS 4 tetrahedra significantly contribute to the SHG response in Ba 6 (Cu 2 Mg)Sn 4 S 16 , which also confirmed that CuS 4 tetrahedra are crucial for the stability and optical properties of the Ba 6 (Cu x Z y )Sn 4 S 16 (Z = Mg, Mn, Zn, Cd, In, Bi, Sn) compounds revealed by electronic structure analysis.
Bismuth telluride (Bi 2 Te 3 ) and its alloys with antimony telluride (Sb 2 Te 3 ) have long been considered to be the best room-temperature bulk thermoelectric (TE) materials. In recent decades, proof-of-concept demonstrations on Bi 2 Te 3 -Sb 2 Te 3 nanostructures have shown high TE performance due to reduction in lattice thermal conductivities. Particularly, ultra-low thermal conductivities have been observed in Bi 2 Te 3 -Sb 2 Te 3 1D superlattices, leading to thermoelectric figures of merit (ZT) as high as 2.4. In contrast, very few computational studies have been performed to provide insight into the phonon transport across these nanostructures. In this work, we use non-equilibrium molecular dynamics simulations with previously developed force fields to simulate thermal transport across Bi 2 Te 3 -Sb 2 Te 3 interfaces and superlattices. We first calculate the thermal conductance associated with a Bi 2 Te 3 -Sb 2 Te 3 interface across a temperature range of 200–400 K. Furthermore, the values are also compared with thermal conductances calculated by a modified Landauer transport formalism using phonon transmission coefficients obtained from the diffuse mismatch model. Our results show that inelastic scattering processes contribute to an increase in interfacial thermal conductance at higher temperatures. Finally, we calculate the thermal conductivities of Bi 2 Te 3 -Sb 2 Te 3 superlattices with varying period lengths from 2 to 18 nm. A minimum thermal conductivity of 0.27 W/mK is observed at a period length of 4 nm, which is attributed to the competition between incoherent and coherent phonon transport regimes. In comparison with previous experimental measurements in the literature, our results show good agreement with respect to the range of thermal conductivity values and the period length corresponding to the minimum superlattice thermal conductivity.
The capture of radioiodine from nuclear processes and the mitigation of environmental release are important topic areas of research. Some of the more commonly employed chemisorption-type iodine scavengers reported in the literature are based on metal-exchanged porous sorbents such as Ag-zeolites or metal-functionalized aerogels and xerogels. However, another option is to use zero-valent metals directly that have known high affinities for iodine gas [i.e., I2(g)]. In this study, fine metal particles of Ag0, Bi0, Cu0, and Sn0 were embedded in porous polyacrylonitrile (PAN) substrates at 75 mass% metal loadings within the form of ellipsoidal beads with maximum diameters of ~2–3 mm. These composite beads showed extremely high iodine loadings that are directly related to the metal particle loadings. The X-ray diffraction (XRD) analyses of Ag0, Bi0, Cu0, and Sn0 particles as well as metal-PAN composite beads reacted with iodine gas at 120 ± 1 °C showed phases of AgI, BiI3, CuI, and SnI4, respectively. For the Ag-PAN, Cu-PAN, and Sn-PAN beads, no other crystalline peaks were observed in XRD for unreacted metal or oxidized metals after 48 h in saturated I2(g) at 120 ± 1 °C, whereas unreacted metallic Bi0 was observed within the Bi-PAN composites. However, after a 72 h exposure at 120 ± 1 °C, both the Bi0 particles and the Bi-PAN composites showed full conversion from Bi0 to BiI3 with XRD. Comparisons between mass uptake data and X-ray absorption spectroscopy were used to better understand the phase distribution of the Bi phases present in the Bi-PAN+I composites. The iodine loadings (mg iodine per g sorbent, or qe) for these materials were 1120 (Ag-Particle), 1382 (Bi-Particle-72h), 1033 (Cu-Particle), 3000 (Sn-Particle), 753 (Ag-PAN), 1012 (Bi-PAN-72h), 1457 (Cu-PAN), and 1669 (Sn-PAN). It is possible that inexpensive sorbents such as these could be deployed to help limit or prevent release of radioiodine to the environment.
Abstract Arctic sea‐ice loss is influenced by multiple positive feedbacks, sparking concerns of accelerated loss in the coming years or even a tipping point, where a sea‐ice equilibrium disappears at a given CO 2 value and sea ice rapidly evolves to a new steady state. Such a tipping point would imply a bi‐stability of the Arctic climate—where multiple steady‐state Arctic climates are possible at the same CO 2 value. Previous works have sought to establish the existence of bi‐stability using a range of models, from zero‐dimensional sea ice thermodynamic models to fully coupled global climate models, with conflicting results. Here, we present a new model of the Arctic that includes both sea‐ice thermodynamics and key atmospheric feedbacks in a simple framework. We exploit the model's simplicity to identify physical mechanisms that control the timing and extent of sea‐ice bi‐stability, and the abruptness of ice loss. We show that longwave radiation feedbacks can have a strong influence on Arctic surface climate from atmospheric temperature increases alone, even without major contributions from clear‐sky moisture or convective clouds suggested previously. While winter sea‐ice bi‐stability is robust to changes in uncertain model parameters in this study, summer sea ice is more sensitive. Finally, our model indicates that positive feedbacks may modulate the CO 2 threshold of sea‐ice loss and the width of bi‐stability much more strongly than the abruptness of loss. These results lead to a comprehensive understanding of the conditions that favor Arctic sea‐ice bi‐stability, particularly the role of atmospheric feedbacks, in both future and past climates.
Lead-free halide double perovskites (HDPs) have become attractive materials for optoelectronic applications owing to their nontoxicity, structural stability, and germane photoelectric properties. In this work, we report the synthesis of high-quality In-alloyed Cs 2 AgIn x Bi (1−x) Cl 6 nanocrystals (NCs) using the antisolvent recrystallization method and comprehensively investigate the effects of In alloying on the structural, morphological, optoelectronic, and temperature-dependent photoluminescence (TDPL) properties using the state-of-the-art experimental and computational tools. Both XRD and Raman spectroscopy analyses confirmed the synthesis of highly crystalline Cs 2 AgIn x Bi (1−x) Cl 6 materials, which exhibited cubic morphology, as confirmed by TEM analysis. Room-temperature photoluminescence (PL) measurements revealed a drastic increase in the intensity above 75% In concentration with dual emission, whereas the time-resolved PL (TR-PL) results show an increase in the average lifetime values with an increase in In content, suggesting that the materials have excellent optical properties and hence are suitable candidates for optoelectronics. The TDPL measurements revealed the smallest Huang–Rhys factor (18.6) for the Cs 2 AgIn x Bi (1−x) Cl 6 (x = 0.9) sample, indicating weak exciton–phonon coupling in this composition. When deployed in the fabrication of a photodetector device, the Cs 2 AgIn x Bi (1−x) Cl 6 (x = 0.9) sample exhibited significantly enhanced photoresponsivity and a faster response time, confirming its potential for photodetector applications. Complementary DFT calculations showed that In alloying modifies the band structure of Cs 2 AgIn x Bi (1−x) Cl 6 . Our results provide valuable insights for designing multifunctional Cs 2 AgIn x Bi (1−x) Cl 6 -based materials for next-generation energy and optoelectronic devices.
Synthesizing monolayers and heterostructures is an enabling approach to extract new physical phenomena from bulk materials. Among the structures amenable to this approach is stanene, which is a monolayer of tin, similar to graphene, and has been predicted to host one-dimensional topological states at its edges. Stanene can be tuned by decorating with different adatoms, which makes it a promising platform on which to engineer topological devices. Here, we deposit Sn on Bi 2 Te 3 and characterize the growth using anomalous synchrotron x-ray scattering and x-ray photoelectron spectroscopy (XPS). X-ray diffraction data reveal the formation of epitaxial Sn-based structures, along with penetration of Sn into the Bi 2 Te 3 , with Sn intercalating between the upper 10 Bi 2 Te 3 quintuple layers. Additionally, XPS data show deposited Sn reacting to form SnTe and Bi at the Bi 2 Te 3 surface. The calculated heat of reaction for Sn and Bi2Te3 is consistent with an exothermic reaction to SnTe and Bi. Using thermodynamic calculations as a guide, we identify several candidate substrates that can stabilize the stanene phase.
Hohlraum temperature calculations with the model by J. H. Hammer and M. D. Rosen predict a higher X-ray drive from Ta-W-Au-Bi high-entropy alloys compared to pure Au and recently developed Ta 4 Au and Au-Bi hohlraums. Here, we study the microstructure and properties of 25-75−µm-thick Ta-W-Au-Bi alloy films deposited via combinatorial direct-current magnetron sputtering. All of the films have promising physical properties, including high electrical resistivity, that satisfy the requirements for magnetically assisted inertial confinement fusion experiments. While porosity tends to increase with increasing Bi content, we also found that films with Bi content > 44 at. % exhibited densification close to the substrate/film interface and formed a single-phase alloy. In conclusion, these findings provide a potential path forward for the development of Ta-W-Au-Bi alloys for next-generation hohlraum materials.
The U.S. Magnet Development Program (US-MDP) explores high-field accelerator magnets compatible with operational conditions beyond the limits of Nb$_3$Sn technology. The ongoing R&D High-Temperature Superconductors (HTS) suggests using Bi$_2$Sr$_2$CaCu$_2$O$_{8-x}$ (Bi-2212) as superconducting element. Bi-2212 Rutherford cables maintain a high critical current (I$_C$) when exposed to a large external magnetic field. However, Bi-2212 exhibits an oversensitive stress-strain response when subject to large Lorentz forces. This paper reports on the magnetic and mechanical analysis of the Bi-2212 cosine-theta insert being developed at Fermilab for a hybrid magnet composed of two external layers of Nb$_3$Sn and two internal layers of Bi-2212. We performed a FEM analysis of the insert to estimate the HTS stress state in the coil's strands under magnetic and mechanical loads.
In this work, we studied the bulk band structure of a topological insulator (TI) Bi 2 Se 3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing-wave excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density-functional theory calculations (local density approximation and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi 2 Se 3 HAXPES valence band. Furthermore, these findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.
Ce 3 Bi 4 Au 3 crystallizes in the same noncentrosymmetric cubic structure as the prototypical Kondo insulator Ce 3 Bi 4 Pt 3 . Here we report the physical properties of Ce 3 Bi 4 Au 3 single crystals using magnetization, thermodynamic, and electrical-transport measurements. Magnetic-susceptibility and heat-capacity data reveal antiferromagnetic order below 𝑇 𝑁 =3.2K. The magnetic entropy 𝑆 mag reaches 𝑅 ln 2 slightly above 𝑇 𝑁 , which suggests localized 4𝑓 moments in a doublet ground state. Multiple field-induced magnetic transitions are observed at temperatures below 𝑇 𝑁 , which indicate a complex spin structure with competing interactions. Ce 3 Bi 4 Au 3 shows semimetallic behavior in electrical resistivity in contrast to the majority of reported cerium-based 343 compounds which are semiconducting. Electrical-resistivity measurements under hydrostatic pressure reveal a slight enhancement of 𝑇 𝑁 under pressures up to 2.3 GPa, which supports a scenario wherein Ce 3 Bi 4 Au 3 belongs to the far left of the Doniach phase diagram dominated by Ruderman-Kittel-Kasuya-Yosida interactions. Using realistic many-body simulations, we confirm the semimetallic electronic structure of Ce 3 Bi 4 Au 3 and quantitatively reproduce its local moment behavior in the paramagnetic state.
Heterostructures of topological insulator Bi 2 Se 3 on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and magnetic orders. Here, the diverse interface attributes, such as material combination, charge re-arrangement, defect and strain, can be utilized to manipulate the quantum properties of this class of materials. Recent experiments of Bi 2 Se 3 /NbSe 2 heterostructures show signatures of strong Rashba band splitting due to the presence of a BiSe buffer layer, but the atomic level mechanism is not fully understood. We conduct first-principles studies of the Bi 2 Se3/BiSe/TMDC heterostructures with five different TMDC substrates (1T phase VSe 2 , MoSe 2 , TiSe 2 , and 2H phase NbSe 2 , MoSe 2 ). We find significant charge transfer at both BiSe/TMDC and Bi 2 Se 3 /BiSe interfaces driven by the work function difference, which stabilizes the BiSe layer as an electron donor and creates interface dipole. The electric field of the interface dipole breaks the inversion symmetry in the Bi 2 Se 3 layer, leading to the giant Rashba band splitting in two quintuple layers and the recovery of the Dirac point in three quintuple layers, with the latter otherwise only occurring in thicker samples with at least six Bi 2 Se 3 quintuple layers. Besides, we find that strain can significantly affect the charge transfer at the interfaces. Our study presents a promising avenue for tuning topological properties in heterostructures of two-dimensional materials, with potential applications in quantum devices.
Two long-standing puzzles in the decay of 185 Bi, the heaviest known proton-emitting nucleus are revisited. These are the non-observation of the 9/2 – state, which is the ground state of all heavier odd-A Bi isotopes, and the hindered nature of proton and α decays of its presumed 60-μs 1/2 + ground state. The 185 Bi nucleus has now been studied with the 95 Mo( 93 Nb; 3n) reaction in complementary experiments using the Fragment Mass Analyzer and Argonne Gas-Filled Analyzer at Argonne National Laboratory’s ATLAS facility. The experiments have established the existence of two states in 185 Bi; the short-lived T 1/2 = $2.8$$^{+2.3}_{–1.0}$ μs, proton- and α-decaying ground state, and a 58(2)–μs γ-decaying isomer, the half-life of which was previously attributed to the ground state. The reassignment of the ground-state lifetime results in a proton-decay spectroscopic factor close to unity and represents the only known example of a ground-state proton decay to a daughter nucleus ( 184 Pb) with a major shell closure. Furthermore, the data also demonstrate that the ordering of low- and high-spin states in 185 Bi is reversed relative to the heavier odd-A Bi isotopes, with the intruder-based 1/2 + configuration becoming the ground state, similar to the lightest At nuclides.
Bi 2 Se 3 is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decreases to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi 2 Se 3 may exhibit quantum spin Hall states. However, growing coalesced ultrathin Bi 2 Se 3 films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi 2 Se 3 films having thicknesses down to 4 nm on sapphire substrates using molecular beam epitaxy that were then characterized with Hall measurements, atomic force microscopy, and Raman imaging. We find that substrate pretreatment—growing and decomposing a few layers of Bi 2 Se 3 before the actual deposition—is critical to obtaining a completely coalesced film. In addition, higher growth rates and lower substrate temperatures led to improvement in surface roughness, in contrast to what is observed for conventional epitaxy. Altogether, coalesced ultrathin Bi 2 Se 3 films with lower surface roughness enable thickness-dependent studies across the transition from a 3D-topological insulator to one with gapped surface states in the 2D regime.
Radioisotopes provide both diagnostic tools and therapeutic treatments for cancer and other diseases. In the US, millions of radioisotope doses are given to patients per year. Radiopharmaceutical generators are widely used to provide such short-lived medical radioisotopes in a clinical setting. These generators work by exploiting chemical differences in a parent/daughter isotope relationship. Actinium-225 (half-life 10 d) is used to provide clinically useful amounts of daughter isotopes 213 Bi (46 m). An integrated millifluidic 225 Ac/ 213 Bi radiopharmaceutical generator device was engineered to produce 213 Bi labeled biomolecules. Using recent LANL successes in additive manufacturing of small-scale fluidic devices, a disposable device was developed that integrates three steps for the production of 213 Bi labeled antibodies: 1) 213 Bi separation from 225 Ac parent, 2) 213 Bi antibody labeling, and 3) purification of the labelled antibody.
Bi(W3O10)6 is beta Polonium structured and crystallizes in the trigonal R3 space group. The structure is zero-dimensional and consists of three Bi(W3O10)6 clusters. there are six inequivalent W sites. In the first W site, W is bonded in a 5-coordinate geometry to six O atoms. There are a spread of W–O bond distances ranging from 1.72–2.64 Å. In the second W site, W is bonded in a 6-coordinate geometry to six O atoms. There are a spread of W–O bond distances ranging from 1.73–2.40 Å. In the third W site, W is bonded in a 6-coordinate geometry to six O atoms. There are a spread of W–O bond distances ranging from 1.73–2.38 Å. In the fourth W site, W is bonded in a 6-coordinate geometry to six O atoms. There are a spread of W–O bond distances ranging from 1.73–2.27 Å. In the fifth W site, W is bonded in a 6-coordinate geometry to six O atoms. There are a spread of W–O bond distances ranging from 1.73–2.35 Å. In the sixth W site, W is bonded in a 6-coordinate geometry to six O atoms. There are a spread of W–O bond distances ranging from 1.73–2.25 Å. Bi is bonded in a distorted T-shaped geometry to three equivalent O atoms. All Bi–O bond lengths are 2.18 Å. There are twenty inequivalent O sites. In the first O site, O is bonded in a single-bond geometry to one W atom. In the second O site, O is bonded in a single-bond geometry to one W atom. In the third O site, O is bonded in a bent 120 degrees geometry to two W atoms. In the fourth O site, O is bonded in a bent 120 degrees geometry to two W atoms. In the fifth O site, O is bonded in a bent 120 degrees geometry to two W atoms. In the sixth O site, O is bonded in a bent 120 degrees geometry to two W atoms. In the seventh O site, O is bonded in a single-bond geometry to one W atom. In the eighth O site, O is bonded in a single-bond geometry to one W atom. In the ninth O site, O is bonded in a single-bond geometry to one W atom. In the tenth O site, O is bonded in a single-bond geometry to one W atom. In the eleventh O site, O is bonded in a bent 120 degrees geometry to two W atoms. In the twelfth O site, O is bonded in a bent 120 degrees geometry to two W atoms. In the thirteenth O site, O is bonded in a bent 150 degrees geometry to two W atoms. In the fourteenth O site, O is bonded in a bent 150 degrees geometry to two W atoms. In the fifteenth O site, O is bonded in a bent 150 degrees geometry to two equivalent W atoms. In the sixteenth O site, O is bonded in a bent 150 degrees geometry to two equivalent W atoms. In the seventeenth O site, O is bonded in a bent 150 degrees geometry to two W atoms. In the eighteenth O site, O is bonded in a bent 150 degrees geometry to two W atoms. In the nineteenth O site, O is bonded in a 4-coordinate geometry to three W and one Bi atom. In the twentieth O site, O is bonded in a distorted trigonal non-coplanar geometry to three W atoms.