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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Monte Carlo Explicitly Correlated Second-Order Many-Body Green’s Function Calculations of Semiconductor Band Gaps

A systematically converging series of ab initio, post-density-functional, size-consistent, electron-correlated approximations is desired for predictive computing of felectronic band structures of insulating, semiconducting, and metallic solids. A series that meets all of these desiderata (except the applicability to metals) is ab initio many-body Green's function theory based on Gaussian-type-orbital (GTO) basis sets. Here, its leading-order approximation, the second-order Green's function (GF2) method in the diagonal and frequency-independent approximations with the aug-cc-pVDZ basis set, is applied to the fundamental band gaps of three semiconductors (diamond, silicon, and silicon carbide in the zincblende structure) using cluster models. Corrections are made to the basis-set-incompleteness errors by the explicit-correlation (F12) ansatz (GF2-F12) for the valence band edges. The crystals are modeled as surface-passivated clusters of increasing sizes, whose wave functions are expanded by up to 2709 GTO basis functions. Immense computational costs of these calculations are overcome by the highly scalable stochastic algorithm of the Monte Carlo GF2-F12 method, whose operation cost per state increases only as a cubic power of system size, which has a tiny memory footprint and easily achieves near-perfect parallel efficiency on thousands of CPUs or on hundreds of GPUs. The correlated, F12-corrected highest-occupied and lowest-unoccupied molecular-orbital energy (HOMO-LUMO) gap is 5.78 ± 0.07 eV for C 87 H 76 as compared with the experimental value of the fundamental (indirect) band gap of bulk diamond at 5.48 eV. The correlated, F12-corrected HOMO-LUMO gaps for Si 75 H 76 and Si 32 C 43 H 76 are 2.56 ± 0.15 eV and 3.50 ± 0.12 eV, respectively, which are expected to decrease further with increasing cluster sizes. As a result, the experimental fundamental (indirect) band gaps of bulk silicon and silicon carbide are 1.17 eV and 2.42 eV, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1977

Theoretical studies of a new double graded band-gap Al sub x Ga sub 1-x As-Al sub y Ga sub 1-y As

A new double graded band-gap (DGBG) Al sub x Ga sub l-x As-Al sub z Ga sub l-z As solar cell has potential for providing high efficiency performance throughout the entire life of a solar cell in a space environment. A preliminary theoretical analysis indicates that short circuit current available from an optimized DGBG cell is slightly larger than that of a previously reported single graded band-gap cell. However, the DGBG cell potentially offers a substantial improvement in radiation resistance of the base region.

Hutchby, J. A.↗
NASA NTRS2013

Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle

The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of the electron density for an individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closest neighbours reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.

potential function↗
NASA NTRS2013

Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle

The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of electron density for na individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closet neighbors reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.

semiconducting single-wall carbon nanotube↗
NASA NTRS1995

Below-Band-Gap Laser Ablation Of Diamond For TEM

Thin, electron-transparent layers of diamond for examination in transmission electron microscope (TEM) fabricated from thicker diamond substrates by using laser beam to ablate surface of substrate. Involves use of photon energy below band gap. Growing interest in use of diamond as bulk substrate and as coating material in variety of applications has given rise to increasing need for TEM for characterization of diamond-based materials. Below-band-gap laser ablation method helps to satisfy this need. Also applied in general to cutting and etching of diamonds.

George, Thomas↗
NASA NTRS1996

HAC: Band Gap, Photoluminescence, and Optical/Near-Infrared Absorption

We report results of laboratory measurements which illustrate the wide range of physical properties found among hydrogenated amorphous carbon (HAC) solids. Within this range, HAC can match quantitatively the astronomical phenomena ascribed to carbonaceous coatings on interstellar grains. We find the optical band gap of HAC to be well correlated with other physical properties of HAC of astronomical interest, and conclude that interstellar HAC must be fairly hydrogen-rich with a band gap of E(sub g) is approx. greater than 2.0 eV.

Witt, Adolf N.↗
DOE OSTI2023

Sr(Ag 1− x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1− x Li x ) 2 Se 2 ] Tunable Direct Band Gap Semiconductors

Abstract Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid‐state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two‐dimensional Sr(Ag 1− x Li x ) 2 Se 2 layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag 1− x Li x ) 2 Se 2 with x up to 0.45. In addition, a new type of intergrowth compound [Sr 3 Se 2 ][(Ag 1− x Li x ) 2 Se 2 ] was synthesized upon further reaction of Sr(Ag 1− x Li x ) 2 Se 2 with SrSe. Both Sr(Ag 1− x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1− x Li x ) 2 Se 2 ] exhibit a direct band gap, which increases with increasing Li substitution ( x ). Therefore, the band gap of Sr(Ag 1− x Li x ) 2 Se 2 can be precisely tuned via fine‐tuning x that is controlled by only the flux ratio and temperature.

Zhou, Xiuquan↗
DOE OSTI2023

Sr(Ag 1-x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1-x Li x ) 2 Se 2 ] Tunable Direct Band Gap Semiconductors

Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid-state reactions, leading to crystal formation of kinetically stable compounds. Here, in this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two-dimensional Sr(Ag 1-x Li x ) 2 Se 2 layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag 1-x Li x ) 2 Se 2 with x up to 0.45. In addition, a new type of intergrowth compound [Sr 3 Se 2 ][(Ag 1-x Li x ) 2 Se 2 ] was synthesized upon further reaction of Sr(Ag 1-x Li x ) 2 Se 2 with SrSe. Both Sr(Ag 1-x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1-x Li x ) 2 Se 2 ] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag 1-x Li x ) 2 Se 2 can be precisely tuned via fine-tuning x that is controlled by only the flux ratio and temperature.

2D materials↗
DOE OSTI2022

CeTaN 3 and CeNbN 3 : Prospective Nitride Perovskites with Optimal Photovoltaic Band Gaps

Perovskites constitute an exceptionally tunable materials family with diverse applications in electronics, optoelectronics, energy, and quantum technologies. Out of the thousands of known perovskites, the majority of compounds are oxides, halides, and chalcogenides. In contrast, only two nitride perovskites are currently known. In this work we perform a thorough ab initio computational screening of possible nitride perovskites, and we identify two new compounds, CeNbN 3 and CeTaN 3 , with band gaps in the near-infrared to visible range, depending on temperature. In their room-temperature orthorhombic phase, we predict that both compounds exhibit direct or quasidirect band gaps in the range 1.1–2.0 eV, with the Pnma phases matching the Shockley–Queisser limit for photovoltaic energy conversion efficiency. Further, these compounds are also predicted to be strong light absorbers, with absorption coefficients surpassing those of high-performance semiconductors such as GaAs and CH 3 NH 3 PbI 3 . The present findings reveal a potentially new class of nitride semiconductors with promise for electronics, optoelectronics, and light harvesting and for integration with existing nitride-based lighting technology.

36 MATERIALS SCIENCE↗
NASA NTRS2018

Modeling and Flight Performance of Supersonic Disk-Gap-Band Parachutes in Slender Body Wakes

NASA's ASPIRE (Advanced Supersonic Parachute Inflation Research and Experiments) project is investigating the supersonic deployment and inflation of full-scale parachutes. To achieve Mars-relevant conditions, the parachutes are deployed at high altitudes over Earth on a sounding rocket platform. During the flight test, Disk-Gap-Band parachutes of 21.5 meter diameter are deployed behind a slender payload 1/6th the diameter of the blunt Mars2020 capsule. Due to the differences in leading body geometry between the test flight and a parachute deployment at Mars, high fidelity numerical simulations of slender and blunt bodywakes, and of rigid parachutes behind them, were used to understand differences and similarities in the flow and the effect on parachute drag. The slender body wake is thinner, closes earlier, and presents a smaller wake deficit. Thus, a parachute deployed in the wake of a slender body is more likely to see a higher dynamic pressure than a parachute deployed behind a blunt body. In the presence of a parachute, the interaction of the unsteady wake with the parachute bow shock is stronger behind the blunt body. Simulations yield highly unsteady forces on the parachute, which was modeled as a rigid body. The mean parachute force behind a slender body is between 3 and 12 percent higher than behind a blunt body, depending on the angle of the parachute with the flow. As the angle of incidence increases, more of the parachute moves out of the leading body wakes, decreasing the sensitivity to leading body shape. To compare the flow past parachutes in Earth's and Mars' atmospheres, simulations were also performed in CO2. At the Mach number considered (1.75), the shock standoff distance ahead of the parachute, post-shock jump conditions, and the resulting parachute forces were found to be very similar in both air and CO2, indicating that a high altitude test is a good proxy for a Mars descent. The results of these numerical simulations and available data on past flight and wind tunnel tests of supersonic Disk-Gap-Band parachutes behind slender bodies were used to generate a parachute drag model for ASPIRE, which in turn was used to help design the flight test. The first flight test occurred in October 2017. The parachute was successfully deployed at Mach 1.77 and an altitude of 42 kilometers. Test instrumentation provided the atmospheric conditions, test vehicle trajectory, and the loads on the parachute along with detailed high-resolution imagery of the inflation process. Reconstruction of the flight test indicated that the measured forces on the parachute were within the model's bounds, although the model over-predicted the parachute force during the first few seconds. The parachute forces during the long subsonic period were well-predicted by the ASPIRE drag model.

Muppidi, Suman↗
DOE OSTI2026

Interlayer coupling in two-dimensional MoS 2 and phosphorene bilayers: Benchmark quantum Monte Carlo study of interaction energies and quasiparticle band gaps

Using high-accuracy many-body quantum Monte Carlo (QMC) methods, we study the effect of interlayer coupling on the properties of two-dimensional freestanding bilayers (BLs) of MoS 2 and phosphorene. The properties of the two BL-materials are very different and largely determined by the interlayer interaction, which is purely van der Waals in MoS 2 and partially electronic/chemical in phosphorene, resulting in a modest layer-dependent property modulation in MoS 2 and strong modulation in phosphorene. Multireference and symmetry considerations are used to construct state-of-the-art accuracy QMC trial wave functions. We determine the quasiparticle band gaps for both materials, $Δ^{\textrm{qp}}_{Γ→\textrm{K}}$ = 2.45 ± 0.05 eV in BL-MoS 2 and $Δ^{\textrm{qp}}_{Γ→Γ}$=1.59 ±0.1eV in BL-phosphorene. In conclusion, these benchmark band-gap values make it possible to consolidate the interpretation of the widely scattered experimental and theory data.

Huang, Yongda [Slovak Academy of Sciences (SAS), B↗
DOE OSTI2020

Phase‐Dependent Band Gap Engineering in Alloys of Metal‐Semiconductor Transition Metal Dichalcogenides

Abstract Bandgap engineering plays a critical role in optimizing the electrical, optical and (photo)‐electrochemical applications of semiconductors. Alloying has been a historically successful way of tuning bandgaps by making solid solutions of two isovalent semiconductors. In this work, a novel form of bandgap engineering involving alloying non‐isovalent cations in a 2D transition metal dichalcogenide (TMDC) is presented. By alloying semiconducting MoSe 2 with metallic NbSe 2 , two structural phases of Mo 0.5 Nb 0.5 Se 2 , the 1T and 2H phases, are produced each with emergent electronic structure. At room temperature, it is observed that the 1T and 2H phases are semiconducting and metallic, respectively. For the 1T structure, scanning tunneling microscopy/spectroscopy (STM/STS) is used to measure band gaps in the range of 0.42–0.58 at 77 K. Electron diffraction patterns of the 1T structure obtained at room temperature show the presence of a nearly commensurate charge density wave (NCCDW) phase with periodic lattice distortions that result in an uncommon 4 × 4 supercell, rotated approximately 4° from the lattice. Density‐functional‐theory calculations confirm that local distortions, such as those in a NCCDW, can open up a band gap in 1T ‐Mo 0.5 Nb 0.5 Se 2 , but not in the 2H phase. This work expands the boundaries of alloy‐based bandgap engineering by introducing a novel technique that facilitates CDW phases through alloying.

Wang, Shuxi↗
NASA NTRS1991

Tunneling calculations for GaAs-Al(x)Ga(1-x) as graded band-gap sawtooth superlattices

Quantum mechanical tunneling calculations for sawtooth (linearly graded band-gap) and step-barrier AlGaAs superlattices were performed by means of a transfer matrix method, within the effective mass approximation. The transmission coefficient and tunneling current versus applied voltage were computed for several representative structures. Particular consideration was given to effective mass variations. The tunneling properties of step and sawtooth superlattices show some qualitative similarities. Both structures exhibit resonant tunneling, however, because they deform differently under applied fields, the J-V curves differ.

Forrest, Kathrine A.↗
NASA NTRS1993

Multi-band gap and new solar cell options workshop

Discussions of the multi-band gap (MBG) and new solar cell options workshop are presented. Topics discussed include: greater than 2 terminal cells; radiation damage preventing development of MBG cells for space; lattice matching; measurement of true performance; future of II-VI materials in MBG devices; and quaternaries.

Hutchby, J.↗