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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effect of boron and carbon addition on microstructure and mechanical properties of the aged gamma-prime strengthened alumina-forming austenitic alloys [Effect of boron and carbon addition on microstructure and mechanical properties of the aged gamma-prime alumina-forming austenitic alloys]

Here, the goal of this work was to understand the effects of aging at 800 °C on the microstructures and mechanical properties of two recently-developed AFA stainless steels based on Fe-14Cr-32Ni-3Nb-3Al-2Ti (wt.%), one of which contained small additions of boron and carbon. To that end both the size distributions and growth kinetics of the B2, Laves phase, L1 2 precipitates present were quantified. While the lattice parameter, morphology, size and coarsening behavior of the L1 2 precipitates was the same in both AFA alloys, the B and C enhanced the grain boundary coverage by both Laves phase and B2-NiAl precipitates, but suppressed their coarsening. These interstitial additions also suppressed the formation of twins and discontinuous precipitation, which were observed in the B and C-free material. It is shown that the yield strength at 700 °C is largely controlled by the size of the L1 2 precipitates, with the largest strengthening effect obtained after aging for 2.4 h for both AFA alloys. Longer aging time led to a loss of strength mainly due to the coarsening of the L1 2 precipitates.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Charge carrier transport properties in layer structured hexagonal boron nitride

Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (~ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T{sub 0}){sup −α} with α = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm{sup -1}), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Pulsed laser deposition of single layer, hexagonal boron nitride (white graphene, h-BN) on fiber-oriented Ag(111)/SrTiO{sub 3}(001)

We report on the growth of 1–10 ML films of hexagonal boron nitride (h-BN), also known as white graphene, on fiber-oriented Ag buffer films on SrTiO{sub 3}(001) by pulsed laser deposition. The Ag buffer films of 40 nm thickness were used as substitutes for expensive single crystal metallic substrates. In-situ, reflection high-energy electron diffraction was used to monitor the surface structure of the Ag films and to observe the formation of the characteristic h-BN diffraction pattern. Further evidence of the growth of h-BN was provided by attenuated total reflectance spectroscopy, which showed the characteristic h-BN peaks at ∼780 cm{sup −1} and 1367.4 cm{sup −1}. Ex-situ photoelectron spectroscopy showed that the surface of the h-BN films is stoichiometric. The physical structure of the films was confirmed by scanning electron microscopy. The h-BN films grew as large, sub-millimeter sheets with nano- and micro-sheets scattered on the surface. The h-BN sheets can be exfoliated by the micromechanical adhesive tape method. Spectral analysis was performed by energy dispersive spectroscopy in order to identify the h-BN sheets after exfoliation. The use of thin film Ag allows for reduced use of Ag and makes it possible to adjust the surface morphology of the thin film prior to h-BN growth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Hexagonal boron nitride and water interaction parameters

The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Real-time wall conditioning and recycling modification utilizing boron and boron nitride powder injections into the Large Helical Device

Controlled particulate injections from the PPPL impurity powder dropper (IPD) into the Large Helical Device have demonstrated positive effects on the wall conditions on both an intra and inter-shot basis. Here injections over a range of densities, input powers, pulse lengths, heating schemes, injection quantities and main ion species show conclusive evidence of improvement to plasma wall conditions. Successful injections are confirmed by both spectroscopic measurements as well as real-time visible camera signals. In 7 s long plasmas the responses include a reduction in wall recycling as well as a reduction in native impurity content as observed over the course of several discharges. For plasmas longer than 40 s, improvements to the recycling rate and increased impurity control are observed in real time as a consequence of the extended particulate injections. These experiments demonstrate the extended applicability of this solid particulate conditioning technique to the control and maintenance of the plasma wall conditions. In addition they are an important initial step in the development of the real-time boronization technique as a supplement to standard conditioning scenarios.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

The Influence of Reactor Parameters on the Boron Nitride-Catalyzed Oxidative Dehydrogenation of Propane

In this contribution, we investigate the effect of various reactor parameters on the oxidative dehydrogenation (ODH) of propane using a hexagonal boron nitride (hBN) heterogeneous catalyst. Here, the analysis begins with an assessment of the influence of mass and heat transport on the observed ODH activity. Unexpected experimental results during this analysis prompted us to investigate the use of SiC as an inert catalyst diluent, and we found an increase in propane conversion with increasing diluent content in the reactor. Control experiments suggested that SiC itself is catalytically inactive and that there may be a significant influence of gas-phase chemistry on the observed reactivity.

03 NATURAL GAS↗
DOE OSTI2022

Transuranium Sulfide via the Boron Chalcogen Mixture Method and Reversible Water Uptake in the NaCu T S 3 Family

The behavior of 5f electrons in soft ligand environments makes actinides, and especially transuranium chalcogenides, an intriguing class of materials for fundamental studies. Due to the affinity of actinides for oxygen, however, it is a challenge to synthesize actinide chalcogenides using non-metallic reagents. Using the Boron Chalcogen Mixture (BCM) method, we achieved the synthesis of the transuranium sulfide NaCuNpS 3 starting from the oxide reagent, NpO 2 . Via the same synthetic route, the isostructural composition of NaCuUS 3 was synthesized and the material contrasted with NaCuNpS 3 . Single crystals of the U-analog, NaCuUS 3 , were found to undergo an unexpected reversible hydration process to form NaCuUS 3 ·xH 2 O (x ≈ 1.5). Here, a large combination of techniques was used to fully characterize the structure, hydration process, and electronic structures, specifically a combination of single crystal, powder, high temperature powder X-ray diffraction, extended X-ray ab-sorption fine structure, infrared, and inductively coupled plasma spectroscopies, thermogravimetric analysis, and density functional theory calculations. The outcome of these analyses enabled us to determine the composition of NaCuUS 3 ·xH 2 O and obtain a structural model that demonstrated the retention of the local structure within the [CuUS 3 ] – layers throughout the hydration-dehydration process. Band structure, density of states, and Bader charge calculations for NaCuUS 3 , NaCu-US 3 ·xH 2 O, and NaCuNpS 3 along with X-ray absorption near edge structure, UV-vis-NIR and work function measurements on ACuUS 3 (A = Na, K, and Rb) and NaCuUS 3 ·xH 2 O samples were carried out to demonstrate that electronic properties arise from the [CuTS 3 ] – layers and show surprisingly little dependence on the interlayer distance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Directing Boron–Phosphorus Bonds in Crystalline Solid: Oxidative Polymerization of P=B=P Monomers into 1D Chains

Over 20 years after the last inorganic ternary B–P compound was reported, Na 2 BP 2 , a new compound containing one-dimensional B–P polyanionic chains has been synthesized. Common high-temperature synthetic methods required for the direct reaction of boron and phosphorus negate the possible formation of metastable or low temperature phases. In this study, oxidative elimination was used to successfully condense 0D BP 2 3– anionic monomers found in a Na 3 BP 2 precursor into unique 1D BP 2 2– chains consisting of five-member B 2 P 3 rings connected by bridging P atoms in the crystal structure of Na 2 BP 2 . In conclusion, the synthesis was guided by in situ X-ray powder diffraction studies, which revealed the metastable nature of the products of oxidative elimination reactions. Na 2 BP 2 is predicted to be an electron balanced semiconductor which was confirmed by UV–vis spectroscopy with the experimentally determined band gap of 1.1 eV.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Bandgap prediction by deep learning in configurationally hybridized graphene and boron nitride

Abstract It is well-known that the atomic-scale and nano-scale configuration of dopants can play a crucial role in determining the electronic properties of materials. However, predicting such effects is challenging due to the large range of atomic configurations that are possible. Here, we present a case study of how deep learning algorithms can enable bandgap prediction in hybridized boron–nitrogen graphene with arbitrary supercell configurations. A material descriptor that enables correlation of structure and bandgap was developed for convolutional neural networks. Bandgaps calculated by ab initio calculations, and corresponding structures, were used as training datasets. The trained networks were then used to predict bandgaps of systems with various configurations. For 4 × 4 and 5 × 5 supercells they accurately predict bandgaps, with a R 2 of >90% and root-mean-square error of ~0.1 eV. The transfer learning was performed by leveraging data generated from small supercells to improve the prediction accuracy for 6 × 6 supercells. This work will pave a route to future investigation of configurationally hybridized graphene and other 2D materials. Moreover, given the ubiquitous existence of configurations in materials, this work may stimulate interest in applying deep learning algorithms for the configurational design of materials across different length scales.

Dong, Yuan↗
DOE OSTI2019

Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration

Hexagonal boron nitride (h-BN) has been predicted to exhibit an in-plane thermal conductivity as high as ~ 550 W m –1 K –1 at room temperature, making it a promising thermal management material. However, current experimental results (220–420 m –1 K –1 ) have been well below the prediction. Here, we report on the modulation of h-BN thermal conductivity by controlling the B isotope concentration. For monoisotopic 10 B h-BN, an in-plane thermal conductivity as high as 585 W m –1 K –1 is measured at room temperature, ~ 80% higher than that of h-BN with a disordered isotope concentration (52%:48% mixture of 10 B and 11 B). The temperature-dependent thermal conductivities of monoisotopic h-BN agree well with first principles calculations including only intrinsic phonon-phonon scattering. Our results illustrate the potential to achieve high thermal conductivity in h-BN and control its thermal conductivity, opening avenues for the wide application of h-BN as a next-generation thin-film material for thermal management, metamaterials and metadevices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Ultrahard stitching of nanotwinned diamond and cubic boron nitride in C 2 -BN composite

Materials combining the hardness and strength of diamond with the higher thermal stability of cubic boron nitride (cBN) have broad potential value in science and engineering. Reacting nanodiamond with cBN at moderate pressures and high temperatures provides a pathway to such materials. Here we report the fabrication of C x -BN nanocomposites, measuring up to 10 mm in longest dimension, by reacting nanodiamond with pre-synthesized cBN in a large-volume press. The nanocomposites consist of randomly-oriented diamond and cBN domains stitched together by sp 3 -hybridized C-B and C-N bonds, leading to p-type semiconductivity. Dislocations near the sutures accommodate lattice mismatch between diamond and cBN. Nanotwinning within both diamond and cBN domains further contributes to a bulk hardness ~50% higher than sintered cBN. We find the nanocomposite of C 2 -BN exhibits p-type semiconductivity with low activation energy and high thermal stability, making it a functional,ultrahard substance.

36 MATERIALS SCIENCE↗