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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Controlling the Activity and Stability of Electrochemical Interfaces Using Atom-by-Atom Metal Substitution of Redox Species

Understanding the molecular-level properties of electrochemically active ions at operating electrode–electrolyte interfaces (EEI) is key to the rational development of high-performance nanostructured surfaces for applications in energy technology. An electrochemical cell coupled with ion soft landing is employed to examine the effect of “atom-by-atom” metal substitution on the activity and stability of well-defined redox-active anions, PMo x W 12–x O 40 3– (x = 0, 1, 2, 3, 6, 9, or 12) at nanostructured ionic liquid EEI. A striking observation made by in situ electrochemical measurements and further supported by theoretical calculations is that the substitution of only one to three tungsten atoms by molybdenum atoms in the PW 12 O 40 3– anions results in a substantial spike in their first reduction potential. Specifically, PMo 3 W 9 O 40 3– showed the highest redox activity in both in situ electrochemical measurements and as part of a functional redox supercapacitor device, making it a “super-active redox anion” compared with all other PMo x W 12–x O 40 3– species. Electronic structure calculations showed that metal substitution in PMo x W 12–x O 40 3– causes the lowest unoccupied molecular orbital (LUMO) to protrude locally, making it the “active site” for reduction of the anion. Several critical factors contribute to the observed trend in redox activity including (i) multiple isomeric structures populated at room temperature, which affect the experimentally determined reduction potential; (ii) substantial decrease of the LUMO energy upon replacement of W atoms with more-electronegative Mo atoms; and (iii) structural relaxation of the reduced species produced after the first reduction step. Our results illustrate a path to achieving superior performance of technologically relevant EEIs in functional nanoscale devices through understanding of the molecular-level electronic properties of specific electroactive species with “atom-by-atom” precision.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Atomate: A high-level interface to generate, execute, and analyze computational materials science workflows

We introduce atomate, an open-source Python framework for computational materials science simula-tion, analysis, and design with an emphasis on automation and extensibility. Built on top of open sourcePython packages already in use by the materials community such as pymatgen, FireWorks, and custodian,atomate provides well-tested workflow templates to compute various materials properties such as elec-tronic bandstructure, elastic properties, and piezoelectric, dielectric, and ferroelectric properties. Atomatealso enables the computational characterization of materials by providing workflows that calculate X-rayabsorption (XAS), Electron energy loss (EELS) and Raman spectra. One of the major features of atomate isthat it provides both fully functional workflows as well as reusable components that enable one to com-pose complex materials science workflows that use a diverse set of computational tools. Additionally,atomate creates output databases that organize the results from individual calculations and contains abuilder framework that creates summary reports for each computed material based on multiplesimulations.

Mathew, Kiran↗
DOE OSTI2020

Atomic-scale tuned interface of nickel-rich cathode for enhanced electrochemical performance in lithium-ion batteries

The Ni-rich layered LiNi 0.6 Mn 0.2 Co 0.2 O 2 (NMC6 22 ) is one promising cathode for lithium-ion batteries (LIBs), but suffers from poor cycling stability under high cutoff potentials. The performance degradation was reflected as capacity fading and voltage drop, having their roots in instable interface of NMC622. Aimed at improving interfacial stability, in this study, we deposited nanoscale ZrO 2 coatings conformally over NMC622 cathodes using atomic layer deposition (ALD). We found that, under a high cutoff voltage (4.5 V), the ALD ZrO 2 coatings evidently improved the performance of NMC622 cathode, showing better cyclability and higher sustainable capacity. In addition, the ALD coatings dramatically boosted the rate capability of NMC622. All these compelling performance results are ascribed to the atomic-scale tunable ZrO 2 coatings via ALD, which create stable interface and thereby inhibit unfavorable evolutions. In the study, we utilize a suite of characterization tools and various analyses to clarify the effects of ALD ZrO 2 coatings. This study will be helpful for improving the performance of nickel-rich cathodes via interfacial engineering using ALD.

25 ENERGY STORAGE↗
DOE OSTI2014

Properties of the c-Si/Al{sub 2}O{sub 3} interface of ultrathin atomic layer deposited Al{sub 2}O{sub 3} layers capped by SiN{sub x} for c-Si surface passivation

This work presents a detailed study of c-Si/Al{sub 2}O{sub 3} interfaces of ultrathin Al{sub 2}O{sub 3} layers deposited with atomic layer deposition (ALD), and capped with SiN{sub x} layers deposited with plasma-enhanced chemical vapor deposition. A special focus was the characterization of the fixed charge density of these dielectric stacks and the interface defect density as a function of the Al{sub 2}O{sub 3} layer thickness for different ALD Al{sub 2}O{sub 3} deposition processes (plasma-assisted ALD and thermal ALD) and different thermal post-deposition treatments. Based on theoretical calculations with the extended Shockley–Read–Hall model for surface recombination, these interface properties were found to explain well the experimentally determined surface recombination. Thus, these interface properties provide fundamental insights into to the passivation mechanisms of these Al{sub 2}O{sub 3}/SiN{sub x} stacks, a stack system highly relevant, particularly for high efficiency silicon solar cells. Based on these findings, it was also possible to improve the surface passivation quality of stacks with thermal ALD Al{sub 2}O{sub 3} by oxidizing the c-Si surface prior to the Al{sub 2}O{sub 3} deposition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Enhancing the inherent catalytic activity and stability of TiO 2 supported Pt single-atoms at CeO x –TiO 2 interfaces

Single-atoms (SAs) with atomically coordinated reaction centers are considered the next generation of catalysts that can exhibit exceptional catalytic efficiency. However, the general concern about thermodynamic vulnerabilities of SAs questions their practical value. Moreover, whether the inherent catalytic nature of SAs is superior compared with that of larger nanoparticles is still under debate. Here, we address two controversies by a comparative study using two catalysts: Pt/TiO 2 and Pt/CeO x –TiO 2 . Based on a hierarchical study of density functional theory, time-resolved catalysis performance test, in situ infrared spectroscopy, and operando X-ray absorption spectroscopy, we could unveil the catalytic nature of Pt-SAs and their stability. By utilizing the heterogeneous interface formed between TiO 2 supporting particles and CeO x clusters formed on the surface of TiO 2 , we preferentially synthesized Pt-SAs pinned at the CeO x –TiO 2 interfaces on CeO x –TiO 2 hybrid-oxide supports. The strong electronic coupling between the Pt-SAs and the Ce ions at the CeO x –TiO 2 interfaces enhanced the catalytic activity toward CO oxidation of Pt-SAs and improved the long-term stability under CO oxidation conditions. The CO oxidation activity of Pt-SAs stabilized at CeO x –TiO 2 was improved by 13.5 times at 200 °C compared with the Pt-SAs on TiO 2 . The results present how to easily improve the activity and stability of Pt-SAs using a simple interface control method. Moreover, we demonstrate that the catalytic activity and the stability of Pt-SAs can be monitored through the chemical state of the interfaces. Finally, our study provides comprehensive understanding about the catalytic nature as well as a novel strategy toward applications of Pt-SAs, enabling sustainable use of Pt in heterogeneous catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography

Pulsed laser atom probe tomography (APT) has enabled the investigation of semiconducting materials at sub-nm length scales and 10 ppm chemical sensitivity. This has enabled APT to be the best technique for nanoscale detection of dopant distributions and low levels of chemical segregation at interfaces, which are both important for semiconductor processing; however, the accuracy of measured interfacial profiles is typically compromised by aberrations. Interfacial profiles in APT data will vary with respect to different interfacial combinations, especially when the evaporation field between two materials is drastically different. Here, the ability of APT to measure SiGe/Si/SiGe interfacial profiles is tested with an 8 nm Si well embedded in SiGe. The APT measurements are compared to those measured using scanning transmission electron microscopy (STEM) to evaluate reconstruction and post-reconstruction processing methods to appropriately measure interfacial profiles using APT. Without post-APT reconstruction processing, the measured Si/SiGe interfacial widths between APT and STEM match poorly, but after applying the z-redistribution algorithm, the interfacial profiles are in good agreement. These results indicate that APT can be used to accurately identify SiGe/Si/SiGe interfacial profiles after application of the z-redistribution algorithm, which will greatly impact the synergy between growth and characterization of semiconductor devices using Si/SiGe interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effect of a micro-scale dislocation pileup on the atomic-scale multi-variant phase transformation and twinning

In this paper, we perform concurrent atomistic–continuum (CAC) simulations to assess the contribution of the internal stress induced by the microscale dislocation pileup at an atomically structured interface to the atomic-scale phase transformations (PTs), reverse PTs, and twinning. The main novelty of this work is to unify the atomistic description of the interface and the coarse-grained (CG) description of the lagging dislocations away from the interface within one single framework. Our major findings are: (a) the interface dynamically responds to a pileup by forming steps/ledges, the height of which is proportional to the number of dislocations arriving at the interface; (b) the pileup-induced internal stress concentration profile follows neither the classical Eshelby model nor the super-dislocation model alone, but a combination of them; (c) when the pre-sheared sample is compressed, a direct square-to-hexagonal PT occurs ahead of the pileup tip and eventually grows into a wedge shape. The two variants of the hexagonal phases form a twin with respect to each other; (d) upon a further increase of the loading, part of the newly formed hexagonal phase transforms back to the square phase. The square product phase resulting from this reverse PT forms a twin with respect to the initial square phase. All phase boundaries (PBs) and twin boundaries (TBs) are stationary and correspond to zero thermodynamic Eshelby driving forces; and (e) the microscale dislocation pileup-induced internal shear stress and the structural change at the atomic-scale interface reduces the stress required for initiating a PT by a factor of 5.5, comparing with that in the sample containing no dislocations. This work is the first characterization of the behavior of PTs/twinning resulting from the reaction between a microscale dislocation slip and an atomically structured interface. In conclusion, the gained knowledge will advance our understanding of how the multi-phase material behaves in many complex physical processes, such as the synthesis of multi-phase high-entropy alloys or superhard ceramics under high-pressure torsion, deep mantle earthquakes in geophysics, and so on, which all involve dislocation slip, PTs, twinning, and their interactions across from the atomistic to the microscale and beyond.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Distinct Chemistries Explain Decoupling of Slip and Wettability in Atomically Smooth Aqueous Interfaces

Despite essentially identical crystallography and equilibrium structuring of water, nanoscopic channels composed of hexagonal boron nitride and graphite exhibit an order-of-magnitude difference in fluid slip. We investigate this difference using molecular dynamics simulations, demonstrating that its origin is in the distinct chemistries of the two materials. In particular, the presence of polar bonds in hexagonal boron nitride, absent in graphite, leads to Coulombic interactions between the polar water molecules and the wall. We demonstrate that this interaction is manifested in a large typical lateral force experienced by a layer of oriented hydrogen atoms in the vicinity of the wall, leading to the enhanced friction in hexagonal boron nitride. The fluid adhesion to the wall is dominated by dispersive forces in both materials, leading to similar wettabilities. Finally, our results rationalize recent observations that the difference in frictional characteristics of graphite and hexagonal boron nitride cannot be explained on the basis of the minor differences in their wettabilities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1972

Solar cell radiation response near the interface of different atomic number materials

The response of cobalt 60 irradiated N/P silicon solar cells was measured as a function of the atomic number of the medium adjacent to the cell and the direction of the gamma ray beam. The interpositioning of various thicknesses of aluminum between the adjacent material and the cell had the effect of moving the cell to various locations in an approximate monatomic numbered medium. Using this technique the solar cell response was determined at various distances from the interface for gold and beryllium. The results were compared with predictions based upon ionization chamber measurements of dose perturbations in aluminum and found to agree within five percent. Ionization chamber data was then used to estimate the influence of various base contact materials.

Burke, E. A.↗
DOE OSTI2015

Interface energetics and atomic structure of epitaxial La{sub 1−x}Sr{sub x}CoO{sub 3} on Nb:SrTiO{sub 3}

The energetics at oxide semiconductor/La{sub 1−x}Sr{sub x}CoO{sub 3} heterojunctions, including the respective alignment of the valence and conduction bands, govern charge transfer and have to be determined for the design of future La{sub 1−x}Sr{sub x}CoO{sub 3}-based devices. In this letter, the electronic and atomic structures of epitaxial La{sub 1−x}Sr{sub x}CoO{sub 3} on Nb-doped strontium titanate are revealed by scanning transmission electron microscopy, electron energy loss spectroscopy, and in situ x-ray and ultra violet photoelectron spectroscopies. For LaCoO{sub 3}, a valence band (VB) offset of 2.8 ± 0.1 eV is deduced. The large offset is attributed to the orbital contributions of the Co 3d states to the VB maximum of the LaCoO{sub 3} thin films, with no evidence of interface dipole contributions. The sensitivity of the valence band orbital character to spin state ordering and oxygen vacancies is assessed using density functional theory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO{sub 2}/Si nanofilms

Hafnium oxide nanofilms were grown with atomic layer deposition on H-terminated Si (001) wafers employing tetrakis dimethyl amino hafnium (TDMA-Hf) and water as precursors. While the number of cycles (30) and the aperture-time for TDMA-Hf (0.08 s) were kept constant, the aperture-time (τ{sub H{sub 2O}}) for the oxidant-agent (H{sub 2}O) was varied from 0 to 0.10 s. The structure of the films was characterized with robust analysis employing angle-resolved x-ray photoelectron spectroscopy. In addition to a ∼1 nm hafnium oxide layer, a hafnium silicate interface layer, also ∼1 nm thick, is formed for τ{sub H{sub 2O}} > 0. The incorporation degree of silicon into the interface layer (i.e., the value of 1 − x in Hf{sub x}Si{sub 1−x}O{sub y}) shows a minimum of 0.32 for τ{sub H{sub 2O}} = 0.04 s. By employing the simultaneous method during peak-fitting analysis, it was possible to clearly resolve the contribution from the silicate and from oxide to the O 1s spectra, allowing for the assessment of the oxygen composition of each layer as a function of oxidant aperture time. The uncertainties of the peak areas and on the thickness and composition of the layers were calculated employing a rigorous approach.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Giant magnetoelectric coupling interaction in BaTiO{sub 3}/BiFeO{sub 3}/BaTiO{sub 3} trilayer multiferroic heterostructures

Multiferroic trilayer thin films of BaTiO{sub 3}/BiFeO{sub 3}/BaTiO{sub 3} were prepared by RF-magnetron sputtering technique at different thicknesses of BiFeO{sub 3} layer. A pure phase polycrystalline growth of thin films was confirmed from X-ray diffraction results. The film showed maximum remnant electric polarization (2P{sub r}) of 13.5 μC/cm{sup 2} and saturation magnetization (M{sub s}) of 61 emu/cc at room temperature. Thermally activated charge transport dominated via oxygen vacancies as calculated by their activation energy, which was consistent with current–voltage characteristics. Magnetic field induced large change in resistance and capacitance of grain, and grain boundary was modeled by combined impedance and modulus spectroscopy in the presence of varied magnetic fields. Presence of large intrinsic magnetoelectric coupling was established by a maximum 20% increase in grain capacitance (C{sub g}) with applied magnetic field (2 kG) on trilayer having 20 nm BiFeO{sub 3} layer. Substantially higher magnetoelectric coupling in thinner films has been observed due to bonding between Fe and Ti atoms at interface via oxygen atoms. Room temperature magnetoelectric coupling was confirmed by dynamic magnetoelectric coupling, and maximum longitudinal magnetoelectric coupling of 515 mV/cm-Oe was observed at 20 nm thickness of BiFeO{sub 3}. The observed magnetoelectric properties are potentially useful for novel room temperature magnetoelectric and spintronic device applications for obtaining higher voltage at lower applied magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Experimental determination of electron attenuation lengths in complex materials by means of epitaxial film growth: advantages and challenges

Accurate electron attenuation lengths are of critical importance in using electron spectroscopic methods to quantitatively characterize complex materials. Here we show that analysis of core-level and valence-band x-ray photoelectron spectra excited with monochromatic AlK? x-rays from the substrate and measured as a function of film thickness can be used to determine electron attenuation lengths in epitaxial SrTiO3 films on Ge(001). Closely lattice-matched epitaxial heterojunctions are ideal systems for determining attenuation lengths provided the films grow in a layer-by-layer fashion, leading to atomically flat surfaces, and the buried interfaces are atomically abrupt. In principle, either the rate of attenuation of substrate peak intensities or the rate of increase of film peak intensities can be used for this purpose. However, we find that structural nonuniformities in the films reduce the accuracy of electron attenuation lengths determined from photoelectrons that originate within the films. A more reliable source of information is found in photoelectrons from the substrate which traverse the film. By using the energy dependence of calculated electron attenuation lengths from the NIST database in combination with Ge 3d core and Ge-derived valence band intensities, we determine electron attenuation length as a function of kinetic energy for SrTiO3.

Chambers, Scott A.↗