Technoeconomic Analysis of Changing PV Array Convective Cooling Through Changing Array Spacing
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The activities associated with the fabrication, handling, and testing of 2-mil solar cell modules on a flexible substrate are demonstrated. It is shown that 2-mil solar cells can be reliably handled, welded, and bonded to a Kapton substrate. Flexible Invar interconnects can be used to interconnect individual cells to form modules. These solar cell modules can be temperature cycled, wrapped around a 10-inch diameter drum, and vibrated to the shuttle environment with no significant damage. A bonding technique was developed to physically join adjacent modules that is stronger than the Kapton, itself. Ultraviolet radiation tests were performed on RTV - silicone as a cell cover material - with very encouraging results.
The state of technology readiness for the automated production of solar cells and modules is reviewed. Individual process steps and process sequences for making solar cells and modules were evaluated both technically and economically. High efficiency with a suggested cell goal of 15% was stressed. It is concluded that the technology exists to manufacture solar cells which will meet program goals.
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Silicon tetrachloride and a reductant (sodium) will be injected into an arc heated mixture of hydrogen and argon, yielding silicon and gaseous sodium chloride. Detailed characterization of the Sonicore sodium injection nozzle, using water as the test fluid was completed. Results indicated that flow rates of 45 gph sodium and 50 scfm argon should produce sufficiently small droplet sizes. The design effort was also completed for the test system preparation which was divided into two categories: (1) system components and (2) test system-laboratory integration.
Several modifications instituted in the wafer surface preparation process served to significantly reduce the process cost to 1.55 cents per peak watt in 1975 cents. Performance verification tests of a laser scanning system showed a limited capability to detect hidden cracks or defects, but with potential equipment modifications this cost effective system could be rendered suitable for applications. Installation of electroless nickel plating system was completed along with an optimization of the wafer plating process. The solder coating and flux removal process verification test was completed. An optimum temperature range of 500-550 C was found to produce uniform solder coating with the restriction that a modified dipping procedure is utilized. Finally, the construction of the spray-on dopant equipment was completed.
The results of a study of process variables and solar cell variables are presented. Interactions between variables and their effects upon control ranges of the variables are identified. The results of a cost analysis for manufacturing solar cells are discussed. The cost analysis includes a sensitivity analysis of a number of cost factors.
Various top contact metal systems were studied. Only Ti Pd Cu approaches baseline (Ti Pd Ag) quality, but this system shows a lack of long term stability. Aluminum back surface field structures were fabricated and thicknesses of p superscript + material of up to 7.0 microns were achieved with open circuit voltages of 0.59V. A general purpose ultrasonic welder was purchased and tests using various metal foils are under way. During fabrication of the demonstration module, several cells became cracked. Due to redundancy of interconnections, the module was not open circuited but the efficiency was reduced to 8.8%. The broken cell was interconnected with a strap across the back and the efficiency was increased to 11.5%. A cost analysis was made and the results indicate a selling price of $0.56/watt peak (in 1986 with 1975 dollars).
During the program a process sequence was proposed and tested for the fabrication of dendritic welb silicon into solar modules. This sequence was analyzed as to yield and cost and these data suggest that the price goals of 1986 are attainable. Specifically, it was shown that a low cost POCL3 is a suitable replacement for the semiconductor grade, and that a suitable CVD oxide can be deposited from a silane/air mixture using a Silox reactor. A dip coating method was developed for depositing an antireflection coating from a metalorganic precursor. Application of photoresist to define contact grids was made cost effective through use of a dip coating technique. Electroplating of both Ag and Cu was shown feasible and cost effective for producing the conductive metal grids on the solar cells. Laser scribing was used to separate the cells from the dendrites without degradation. Ultrasonic welding methods were shown to be feasible for interconnecting the cells. A study of suitable low cost materials for encapsulation suggest that soda lime glass and phenolic filled board are preferred.
Using silk screened evaporated and sputtered Al as the metal source, the formation of Al back surface fields was studied. The most satisfactory results were those obtained with the sputtered A1 and in which open circuit voltages (V sub oc) of 0.585 v (12 ohm cm FZ silicon) were achieved. The ultrasonic interconnect process is discussed. The process is shown to be satisfactory, but increased pull-strength may be obtained if some form of sintering is carried out on the metallized contacts. Plasma etching is shown to be feasible as a replacement for wet chemical cleaning prior to diffusion. Initial results on cells prepared by using electroless Pd/Ni plus either electroplated Ag or Cu show slightly poor performance than cells with the baseline evaporated Ti/Pd/Ag system. A mask designed for the 1.6 x 7.0 cm and 2.0 x 7.0 cm cells is described. This mask has a lower area coverage and total lower resistive loss than the previous mask design. It is also shown that the cell width should not exceed 2.0 - 3.0 cm for optimum efficiency.
Two process specifications supplied by contractors were tested. The aluminum silk screening process resulted in cells comparable to those from sputtered Al. The electroless plating of contacts specification could be used only with extensive modification. Several experiments suggest that there is some degradation of the front junction during the Al back surface field (BSF) fabrication. A revised process sequence was defined which incorporates Al BSF formation. A cost analysis of this process yielded a selling price of $0.75/watt peak in 1980.
An advanced process sequence for manufacturing high efficiency solar cells and modules in a cost-effective manner is discussed. Emphasis is on process simplicity and minimizing consumed materials. The process sequence incorporates texture etching, plasma processes for damage removal and patterning, ion implantation, low pressure silicon nitride deposition, and plated metal. A reliable module design is presented. Specific process step developments are given. A detailed cost analysis was performed to indicate future areas of fruitful cost reduction effort. Recommendations for advanced investigations are included.
An automated process sequence, to manufacture photovoltaic modules at a capacity of approximately 500 MW per year at a cost of approximately $0.50 per peak watt is described. Verification tests were performed and are reported along with cost predictions.
Several microwave systems for use in solar cell fabrication were developed and experimentally tested. The first system used a standing wave rectangular waveguide horn applicator. Satisfactory results were achieved with this system for impedance matching and wafer surface heating uniformity. The second system utilized a resonant TM sub 011 mode cylindrical cavity but could not be employed due to its poor energy coupling efficiency. The third and fourth microwave systems utilized a circular waveguide operating in the TM sub 01 and TM sub 11 but had problems with impedance matching, efficiency, and field uniformity.
The process sequence for the fabrication of dendritic web silicon into solar panels was modified to include aluminum back surface field formation. Plasma etching was found to be a feasible technique for pre-diffusion cleaning of the web. Several contacting systems were studied. The total plated Pd-Ni system was not compatible with the process sequence; however, the evaporated TiPd-electroplated Cu system was shown stable under life testing. Ultrasonic bonding parameters were determined for various interconnect and contact metals but the yield of the process was not sufficiently high to use for module fabrication at this time. Over 400 solar cells were fabricated according to the modified sequence. No sub-process incompatibility was seen. These cells were used to fabricate four demonstration modules. A cost analysis of the modified process sequence resulted in a selling price of $0.75/peak watt.
Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work was directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The process was found to be extremely lengthy and cumbersome, and was also found to produce a product virtually identical to that produced by single step electroless nickel plating, as shown by adhesion tests and electrical characteristics of cells under illumination.
Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.