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At least 91 records · Page 5

Cross-differential amplifier

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Hajimiri, Seyed-Ali↗

Fast Single-Quantum Measurement with a Multi-Amplifier Sensing Charge-Coupled Device

A novel readout architecture that uses multiple non-destructive floating-gate amplifiers to achieve sub-electron readout noise in a thick, fully-depleted silicon detector is presented. This Multi-Amplifier Sensing Charge-Coupled Device (MAS-CCD) can perform multiple independent charge measurements with each amplifier; measurements with multiple amplifiers can then be combined to further reduce the readout noise. The readout speed of this detector scales roughly linearly with the number of amplifiers without requiring segmentation of the active area. The performance of this detector is demonstrated, emphasizing the ability to resolve individual quanta and the ability to combine measurements across amplifiers to reduce readout noise. The unprecedented low noise and fast readout of the MAS-CCD make it a unique technology for astronomical observations, quantum imaging, and low-energy interacting particles.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Multifunctional RF limiting amplifier

Multifunctional RF limiting amplifiers having various configurations and functions are disclosed. In a first configuration, the RF limiting amplifier includes an active load output circuit that allows one to adjust the output impedance based upon the anticipated connected load impedance. In a second configuration, the RF limiting amplifier includes a pair of emitter-followers to buffer the output of a first stage, allowing the RF limiting amplifier to drive one or more second stages. A third configuration includes a pair of RF limiting amplifiers with their outputs mixed to implement a down conversion function. The third configuration may be used to drive dual SAW resonators for detecting the presence of biological or chemical agents. The RF limiting amplifier may be implemented in either bipolar junction transistors or CMOS transistors.

Wessendorf, Kurt O.↗

Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors

To search for dark matter candidates with masses below $\mathcal{O}$ (MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic bandgaps on the order of 1–100 meV. In order to detect the charge signal produced by scattering or absorption events, SPLENDOR has designed a two-stage cryogenic HEMT-based amplifier with an estimated charge resolution approaching the single-electron level. A low-capacitance (~ 1.6 pF) HEMT is used as a buffer stage at T = 10 mK to mitigate effects of stray capacitance at the input. The buffered signal is then amplified by a higher-capacitance (~ 200 pF) HEMT amplifier stage at T = 4 K. Importantly, the design of this amplifier makes it usable with any insulating material—allowing for rapid prototyping of a variety of novel detector materials. Here, we present the two-stage cryogenic amplifier design, preliminary voltage noise performance, and estimated charge resolution of 7.2 electrons.

47 OTHER INSTRUMENTATION↗

Thermal stress-induced depolarization compensation in wide-bandwidth, high-energy, high-repetition-rate multi-slab laser amplifiers

We present an innovative design for a two-head, gas-cooled multi-slab high-energy, high-repetition-rate amplifier aimed at mitigating thermally induced depolarization in a wide-bandwidth neodymium-doped glass gain medium. This architecture employs two quartz rotators (QRs) with opposite-handedness, strategically positioned within each multi-slab amplifier head, to enhance depolarization compensation. Theoretical modeling of this amplifier configuration demonstrates a 20× reduction in depolarization losses for a 70 mm beam operating at the central wavelength, compared to conventional approaches that utilize a single QR positioned between the amplifier heads. In addition, for a wide bandwidth source, the integration of QRs with opposite-handedness yields a 9× improvement in depolarization losses at the spectral extremes compared to the use of two QRs exhibiting the same optical handedness in both amplifier heads.

47 OTHER INSTRUMENTATION↗

Ka-Band GaN-on-SiC MMIC Balanced High Power Amplifier for NASA's Lunar Missions

The feasibility of Ka-band GaN-on-SiC MMIC based balanced power amplifier for science data downlinks from NASA’s lunar mission assets in space is investigated. The balanced amplifier combines the RF output power from two power amplifiers using a rectangular waveguide based 3-dB hybrid coupler. The investigation includes characterizing the balanced amplifier for the overall RF output power, Gain, power added efficiency, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd order intermodulation products, and noise figure. The balanced amplifier has high output RF power and good linearity and can support high data rate downlinks from the surface and vicinity of the Moon to Earth.

Gallium Nitride↗

Radiatively cooled quantum microwave amplifiers

Superconducting microwave amplifiers are essential for sensitive signal readout in superconducting quantum processors. Typically based on Josephson junctions, these amplifiers require operation at milli-Kelvin temperatures to achieve quantum-limited performance. Here, we demonstrate a quantum microwave amplifier that employs radiative cooling to operate at elevated temperatures and maintain near quantum-limited added noise. This kinetic-inductance-based parametric amplifier, patterned from a single layer of relatively high-Tc NbN thin film, maintains a high gain and meanwhile enables low added noise of 1.3 quanta when operated at 1.5 K. Remarkably, this represents only a 0.2 quanta increase compared to the performance at a base temperature of 0.1 K. Based on our findings, we also discuss the practicality of such an operating scheme for various quantum applications. By uplifting the parametric amplifiers from the mixing chamber without compromising readout efficiency, this work represents an important step toward more scalable microwave quantum technologies.

Physics↗

Fluid pressure amplifier and system

A flueric beam-deflection amplifier and a method of controlling the same are described. Either a single or a series of cascaded fluid amplifier units are provided and each one of which may include the usual power nozzle, control nozzles, outlet passages and vent passages. All vent passages of each fluid amplifier unit lead to an enclosed vent outlet chamber which is connected to the ambient environment or to a return manifold through a variably restricted passage. To control the fluid amplifier unit, power and control stream pressures are first established, after which the restricted passage is reduced to regulate the input bias, the gain and the input impedance of the fluid amplifier unit.

Garner, H. D.↗

Bio-isolated dc operational amplifier

A bio-isolated dc operational amplifier is described for use in making bioelectrical measurements of a patient while providing isolation of the patient from electrical shocks. The circuit contains a first operational amplifier coupled to the patient with its output coupled in a forward loop through a first optic coupler to a second operational amplifier. The output of the second operational amplifier is coupled to suitable monitoring circuitry via a feedback circuit including a second optic coupler to the input of the first operational amplifier.

Lee, R. D.↗

Digital automatic gain amplifier

A circuit is described for adjusting the amplitude of a reference signal to a predetermined level so as to permit subsequent data signals to be interpreted correctly. The circuit includes an operational amplifier having a feedback circuit connected between an output terminal and an input terminal; a bank of relays operably connected to a plurality of resistors; and a comparator comparing an output voltage of the amplifier with a reference voltage and generating a compared signal responsive thereto. Means is provided for selectively energizing the relays according to the compared signal from the comparator until the output signal from the amplifier equals to the reference signal. A second comparator is provided for comparing the output of the amplifier with a second voltage source so as to illuminate a lamp when the output signal from the amplifier exceeds the second voltage.

Holley, L. D.↗

500-Watt, 10-GHz Solid State Amplifier

X-band system amplifies low-duty-cycle pulses. Amplifier chain consists of driver-amplifier section using GaAs FET's with hybrid couplers, and power-amplifier section using IMPATT diodes with circulators for input/output coupling and for isolation between stages. Solid-state X-band amplifier package constitutes reliable, lightweight, compact, RF source. Used for many applications involving low-and variable-duty-cycle operation as well as fixed and high-duty-cycle operation.

Russell, K. J.↗

Direct solar-pumped iodine laser amplifier

During this period the parametric studies of the iodine laser oscillator pumped by a Vortek simulator were carried out before amplifier studies. The amplifier studies are postponed to the extended period after completing the parametric studies. In addition, the kinetic modeling of a solar-pumped iodine laser amplifier, and the experimental work for a solar pumped dye laser amplifier are in progress. This report contains three parts: (1) a 10 W CW iodine laser pumped by a Vortek solar simulator; (2) kinetic modeling to predict the time to lasing threshold, lasing time, and energy output of solar-pumped iodine laser; and (3) the study of the dye laser amplifier pumped by a Tamarack solar simulator.

Han, K. S.↗

Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)

A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.

Cornwell, Donald Mitchell, Jr.↗

High input impedance amplifier

High input impedance amplifiers are provided which reduce the input impedance solely to a capacitive reactance, or, in a somewhat more complex design, provide an extremely high essentially infinite, capacitive reactance. In one embodiment, where the input impedance is reduced in essence, to solely a capacitive reactance, an operational amplifier in a follower configuration is driven at its non-inverting input and a resistor with a predetermined magnitude is connected between the inverting and non-inverting inputs. A second embodiment eliminates the capacitance from the input by adding a second stage to the first embodiment. The second stage is a second operational amplifier in a non-inverting gain-stage configuration where the output of the first follower stage drives the non-inverting input of the second stage and the output of the second stage is fed back to the non-inverting input of the first stage through a capacitor of a predetermined magnitude. These amplifiers, while generally useful, are very useful as sensor buffer amplifiers that may eliminate significant sources of error.

Kleinberg, Leonard L.↗

Measurements of the Low Frequency Gain Fluctuations of a 30 GHz High-Electron-Mobility-Transistor Cryogenic Amplifier

Low frequency gain fluctuations of a 30 GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15 K load. Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.

Jarosik, Norman↗

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Patterson, Richard L.↗

Low-Noise Amplifier for 100 to 180 GHz

A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art.

Kangaslahti, Pekka↗

Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have prohibitively low impedances. Yet another advantage afforded by the virtual ground of the differential configuration is elimination of the need for a ground plane and, hence, elimination of the need for back-side metallization of the MMIC chip. In turn, elimination of the back-side metallization simplifies fabrication, reduces parasitic capacitances, and enables mounting of the MMIC in the electric-field plane ("E-plane") of a waveguide. E-plane mounting is consistent with (and essential for the utility of) the finline configuration, in which transmission lines lie on a dielectric sheet in the middle of a broad side of the waveguide. E-plane mounting offers a combination of low loss and ease of assembly because no millimeter-wave wire bonds or transition substrates are required. Moreover, because there is no ground plane behind the MMIC, the impedance for the detrimental even (single-ended) mode is high, suppressing coupling to that mode. Still another advantage of E-plane mounting is that the fundamental waveguide mode is inherently differential, eliminating the need for a balun to excite the differential mode.

Kangaslahti, Pekka↗