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Q Control of an AFM Microcantilever With Double-Stack AlN Sensors and Actuators
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Prismatic Slip in AlN Crystals Grown By PVT
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Optimizing the piezoelectric response in AlN thin-films via high-throughput ab-initio perturbation theory simulations.
Abstract not provided.
Deterministic creation of optically active defect in AlN toward integrated single photon emitters.
Abstract not provided.
Total Ionizing Dose Response of a AlN-Based Precision Oscillator
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Substrate dependence of heat dissipation in GaN p-n diodes bonded to SiC, AlN direct-bonded Cu, and diamond
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Depth and substrate dependence of heat dissipation in GaN p-n diodes bonded to AlN, diamond, and SiC
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High Temperature W-band Complex Permittivity Measurements of Thermally Cycled Ceramic-Metal Composites: AlN:Mo with 0.25 vol% to 4.0 vol% Mo from 25 °C to 1000 °C in Air
An apparatus for measuring the W-band (75-110GHz) complex permittivity of dielectrics at 1000 °C was developed. This apparatus allows for measurements at approximately twice the temperature of previously published high temperature free-space measurement systems while maintaining similar precision. Challenges were addressed related to high temperature measurements, including temperature uniformity, the accuracy of temperature measurements, and preventing temperature related changes to mm-wave measurement systems. The details of complex permittivity extraction from the measured S-parameters are discussed. Sources of error related to permittivity measurement and mathematical models were identified and are discussed in detail herein. Thermally-cycled, mm-wave absorbing, aluminum nitride ceramic composites containing varying levels of molybdenum additives were measured over the range of 25-1000 °C. These measurements were compared to the same composites before thermal cycling. It was found that ceramic composites are largely stable after thermal cycling in terms of dielectric properties despite the presence of visible surface modifications.
Crystallographic Phosphoric Acid etching of GaN AlGaN and AlN Nanostructures.
Abstract not provided.
AlN-Alloyed-Based Wideband Multiplexers for Situational Spectral Awareness.
Abstract not provided.
Final Technical Report: High Thermal Conductivity, Multi-Layer, AlN-Based PCB Enabling Rapid Prototyping with Embedded Printed Components
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Depth and substrate dependence of heat dissipation in GaN p-n diodes bonded to AlN, diamond, and SiC
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Effect of bisphosphonate treatment on the oim mouse middle ear ossicles' structure, composition and hearing
Hearing loss is common in people with osteogenesis imperfecta (OI or brittle bone disease). Bisphosphonates are commonly used to treat long bone fragility in children with OI. However, its impact on the bone quality of the middle ear ossicles and hearing remains unknown. This study determines whether bisphosphonates treatment itself may contribute to hearing loss in OI by evaluating its effects in the oim/oim mouse model of severe OI having normal auditory function. Specifically, this study reports the effects of alendronate (ALN), a nitrogen-containing bisphosphonate, on ossicle morphology, porosity, and elemental composition in 14-week-old oim/oim mice treated weekly, starting at 2 weeks of age. The ossicles were examined using synchrotron microtomography and X-ray fluorescence microscopy (XFM). Hearing was assessed longitudinally until 26 weeks of age by determining auditory brainstem response (ABR) thresholds in another group of mice also treated weekly starting at 2 weeks of age. ALN treatment further reduces in size the already small oim/oim ossicles, specifically in female mice. Porosity, bone composition, and hearing function, however, were generally not affected by the ALN treatment. Furthermore, ALN does not prevent joint fusions, excessive bone formations, or enlarged joint spaces in WT or oim/oim experimental groups. One ALN-treated oim/oim mouse with a bone formation in the interior of the footplate, and one ALN-treated WT mouse with a fixed footplate had frequency-specific hearing loss. Since footplate abnormalities are not observed in PBS-treated mice in this study, it remains unclear whether ALN fails to prevent these changes or contributes to their development. Future studies should investigate the mechanisms of ossicular abnormalities and bisphosphonates modulatory role in the ossicles.
Embedded Ferroelectric Nanoclusters can drive Polarization Reversal in a Non-Ferroelectric Polar Film via the Proximity Effect
Heterogeneous nucleation from defects dominates the electric field required for polarization switching of ferroelectrics. Here, we consider the switching of a nominally non-switchable polar thin film of AlN due to the proximity effect arising from embedded ferroelectric nanoclusters of Al 1-x Sc x N. Using a Landau-Ginzburg-Devonshire thermodynamic approach and finite element modeling, we study the influence of nanocluster shape on polarization switching and domain nucleation emerging in AlN. The ferroelectric nanocluster boundary is modeled as a thin layer transitioning from Al 1-x Sc x N to AlN. We analyze the conditions under which polarization switching in the AlN film occurs at coercive fields significantly lower than its dielectric breakdown field. In the presence of spike-like Al 1-x Sc x N nanoclusters, the proximity effect enables switching of the spontaneous polarization in AlN and significantly reduces the corresponding coercive field. The internal field, which is depolarizing inside the AlN (due to its larger spontaneous polarization) and polarizing within the ferroelectric Al 1-x Sc x N nanoclusters (due to its smaller spontaneous polarization), lowers the potential barrier in the clusters and nucleates nanodomains at the Al 1-x Sc x N-AlN interface, forming localized regions of reversed polarization. Proximity effect can thus provide a pathway towards "thawing" previously "frozen" ferroelectrics through engineered nucleation for memory, actuation and optical technologies.
Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors
Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm −1 K −1 at 298° K, compared to BSO's 3.29 Wm −1 K −1 ). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 V pp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.