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DOE OSTI2020

Development and Test of High Temperature Surface Acoustic Wave Gas Sensors

The demand for sensors in hostile environments, such as power plant environments, aerospace environments, oil and gas extraction, and high-temperature metallurgy environments, has risen over the past decades in a continuous attempt to increase process control, improve energy and process efficiency in production, reduce operational and maintenance costs, increase safety, and perform condition-based maintenance in equipment and structures operating in high-temperature harsh-environment conditions. The increased reliability, improved performance, and development of new sensors and networks with a multitude of components, especially wireless networks, are the target for operation in harsh environments. Gas sensors, in particular H2 sensors, operating above 200 C are required in the instrumentation, process control and general safety of a number of industries including coal, natural gas, and nuclear power generation facilities, the aerospace and automotive industries, metallurgical production and defense-related applications. The surface acoustic wave (SAW) platform is a particularly promising option for high-temperature, harsh-environment gas sensing applications since the platform exhibits advantages, such as battery-free and wireless operation, small size, possibility for scale production using well-developed technologies from the semiconductor industry, and low cost of installation and operation. In this work, one-port SAW resonators (SAWRs) operating along five different orientations on a commercially available langasite (LGS) wafer employing Pt-Al2O3 electrodes and reflectors were designed, fabricated, and used as high-temperature H2 sensors. Two of the selected orientations were predicted and confirmed to have temperature-compensated operation above 150 C. A gas sensor test setup was developed, capable of gas cycling between N2, O2 and N2/H2 mixtures under extended high-temperature periods (up to 650 C for over 20 hours). Thin film Pt-Al2O3 was used as the electrode material for the transducers and reflectors capable of high-temperature operation, and also as H2 sensing film. In addition, yttria-stabilized zirconia (YSZ) thin films with Pt decoration were tested as sensing films aimed to enhance the SAWR sensor response to H2. The SAW devices were monitored in excess of 1700 hours in real-time during gas cycling sequences up to 600 C, leading to the following findings: i) the Pt-Al2O3 electrodes performed better for H2 sensing than the Pt-decorated YSZ sensing film, showing as much as 50% higher frequency variation response in the 200 C to 400 C range; ii) different crystallographic orientations operating on the same LGS wafer experienced different responses to H2 exposures up to 500 C; iii) the surface oxidation state of the SAWR sensors was shown to have an important impact on subsequent H2 exposure responses. In addition, a sensor system employing two LGS SAWRs, aligned along two different orientations, has been developed to simultaneously determine H2 presence and temperature. Finally, wireless interrogation of a SAWR sensor was successful within the gas cycling test fixture, and successful wireless H2 detection was achieved above 400 C.

Ayes Moncada, Armando↗

DOE OSTI2022

Nafion Passivation of c-Si Surface and Edge for Electron Paramagnetic Resonance

Effective surface passivation of crystalline silicon (c-Si) surface by reducing the carrier recombination rate has led to modern c-Si solar cells with efficiencies > 25% in both laboratory and industrial settings. Typical mainstream surface passivation techniques include high-temperature silicon oxide (SiOx), amorphous silicon (a-Si:H), hydrogen-rich silicon nitride (SiNx), and aluminum oxide (Al2O3) [1]. They have demonstrated excellent surface recombination velocity of < 1 cm/s owing to both chemical passivation (via the hydrogen saturation of Si dangling bonds at the c-Si surface), and field-effect passivation (via the band bending from the fixed charge of the dielectric layers). Recently, several groups have studied solution-based organic materials for c-Si passivation, including bis(trifluoromethane)sulfonimide (TFSI), polystyrenesulfonate, and Nafion [2, 3] via spin or dip coating. All films were processed at ambient room temperature, and a high lifetime of 12 ms, as well as a low saturation current density (J0) of 16 fA/cm2, have been demonstrated using Nafion passivation [2]. However, despite the air instability, Nafion has several advantages when introduced to PV applications: (a) Wafer quality can be measured at high throughput after several process stages. (b) It is compatible with PL mapping, compared to HF liquid passivation which cannot be performed in room ambient. (c) Nafion process is fast and poses fewer constraints on process complexity, and cleanness, compared to Al2O3 and a-Si:H passivation. (d) Nafion is the ideal room temperature passivation, which can be applied onto a small fragment of a degraded module to investigate microscopic mechanisms when studying degradation mechanisms. Edge passivation is needed for advanced characterization tests such as Electron Paramagnetic Resonance (EPR), Electrically Detected Magnetic Resonance (EDMR), Deep Level Transient Spectroscopy (DLTS), local cell current-voltage (J-V), and Suns-Voc. In such cases, the laser-damaged minicell edges will obscure the true degradation mechanisms, and Nafion can effectively passivate them without causing further degradation through elevated-temperature processes. In this contribution, we show the passivation results of Nafion on bare nCz and compare it with a Al2O3 witness. We highlight the importance of edge pre-treatment before Nafion to achieve good passivation. We show that Nafion can reach decent passivation without undergoing high-temperature processes. We also explore the temperature dependency of Nafion through photoluminescence (PL) study and demonstrate the application of Nafion under cryogenic temperature (~6 K) through EPR. Our results reveal that Nafion can reduce surface and edge Si dangling bonds at low temperatures. Thus, it can be used as an effective room temperature passivation technique for advanced characterization methods.

c-Si↗

DOE OSTI2023

Structural complexity of γ-Al 2 O 3 : The nature of vacancy ordering and the structure of complex antiphase boundaries

The structure of γ-Al2O3 remains largely undetermined despite decades of research. This is due to the high degree of disorder, which poses significant challenges for structural analysis using conventional crystallographic approaches. Herein, we study the structure of γ-Al2O3 with Scanning Transmission Electron Microscopy (STEM) and ab-initio calculations to provide a complete structural description. We show that the microstructure can be understood in terms of two key structural features of nanoscale spinel domains and finite thickness segments termed as complex antiphase boundaries (cAPB) that provide the domain interconnectivity. The spinel domains have a distinctive preference for vacancy ordering, which can be rationalized in terms of a structure with a stacking disorder. Tetragonal P4 1 2 1 2 or monoclinic P2 1 models, all based on the identical motif, can be considered as representative ordered forms. Individual spinel domains are interconnected via cAPBs, which adopt a distinct non-spinel bonding environment of δ-Al 2 O 3 . The most common cAPB consists of a single delta motif with thickness of just 0.6 nm on (001), with the resulting displacement a/4 [101]. Remarkably, the cAPBs are shown to energetically stabilize the spinel domains of γ-Al 2 O 3 explaining their high abundance. We demonstrate how the tetragonal distortions naturally arise in this intricate microstructure and place the proposed model in the context of phase transformations to high temperature transition aluminas.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Mitigating electrochemical degradation in CsPbBr{sub 3} gamma detectors by organic and inorganic encapsulation.

CsPbBr3 perovskite semiconductors have emerged as a leading candidate for nextgeneration radiation detectors because of their exceptional charge transport properties, defect tolerance, and record-breaking sensitivity and energy resolution. Their long-term stability, however, is hindered by electrode-driven electrochemical decomposition, which is accelerated by moisture- and oxygen-assisted ion migration during operation. Here, we investigated organic and inorganic encapsulation strategies as both environmental barriers and means to suppress interfacial degradation pathways. Atomic layer deposition (ALD) of Al2O3 provided a conformal passivation layer that blocked environmental ingress, suppressed ionic diffusion, reduced leakage current, enhanced energy resolution and expanded the operational electric-field window beyond 5 kV∙cm1 . By contrast, organic encapsulants such as paraffin wax and polystyrene slowed moisture diffusion but did not suppress interfacial reactions, with wax extending stability to over 90 days. These results show that ALD-Al2O3 suppresses dominant interfacial degradation pathways, enabling stable, high-field operation and advancing the practical deployment of CsPbBr3 γ-ray detectors.

Unal, Mustafa↗

DOE OSTI2026

From Filamentary Failure to Durable Halide Perovskite Memristors

Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts and poor endurance, limiting their practical applications. Here, we elucidate both the resistive switching and failure mechanisms in perovskite memristors with a fluorine-doped tin oxide (FTO)/methylammonium lead triiodide (MAPbI3)/Ag structure and demonstrate a strategy to substantially enhance device durability. As opposed to commonly invoked filamentary mechanisms, electrical, structural, and spectroscopic analyses reveal that resistive switching arises from interfacial barrier modulation by reversible Ag redox reactions that drive electrochemical doping/dedoping within the perovskite. Device failure, however, originates from metallic Ag0 filamentation that ultimately forms permanent conductive pathways. Introducing an ultrathin Al2O3 interlayer at the inert-electrode interface improves device endurance by more than 30-fold, exceeding 15,000 switching cycles, without compromising other performance metrics. Interfacial characterization indicates that the Al2O3 layer modifies wettability of Ag deposits, promoting planar island growth rather than through-film filamentation. These findings establish a clear link between interfacial electrochemistry, metal precipitation behavior, and memristor reliability, highlighting inert-electrode interfacial engineering as an effective pathway toward durable perovskite-based memristors.

14 SOLAR ENERGY↗

DOE OSTI2021

Numerical Analysis of Time Resolved Photoluminescence for Alumina/Cd(Se,Te) Double Heterostructures

Al2O3 has demonstrated excellent Cd(Se,Te) surface passivation. In this work, recombination mechanisms were investigated by comparing simulations of time resolved photoluminescence (TRPL) to PL decay data (320 ns effective lifetime) for Al2O3 /Cd(Se,Te)/Al2O3 double heterostructures. Models were employed to investigate the effects of bulk and surface recombination, electric fields, mobility, and doping by simulating intensity-dependent single- (1PE) and two-photon excitation (2PE) TRPL. 2PE simulations replicate decay behavior while 1PE simulations require attention to charge redistribution. Various coupled mechanisms cannot be distinguished from PL decay data alone. Complementary measurements are required to constrain the model parameters and isolate mechanisms.

CdTe↗

DOE OSTI2021

Effects of Al:Si and (Al + Na):Si ratios on the properties of the international simple glass, part I: Physical properties

Understanding composition-structure-property relationships of high-alumina nuclear waste glasses are important for vitrification of nuclear waste at the Hanford Site. Two series of glasses were designed, one with varying Al:Si ratios and the other with (Al+Na):Si ratios based on the International Simple Glass (ISG, a simplified nuclear waste model glass), with Al2O3 ranging from 0 to 23 mol % (0 to 32 wt. %). The glasses were synthesized and characterized using electron probe microanalysis, X-ray photoelectron spectroscopy, small angle X-ray scattering, high temperature oxide melt solution calorimetry, and infrared spectroscopy. Glasses were crystal free, and the lowest Na2O and Al2O3 glass formed an immiscible glass phase. Evolution of various properties - glass transition temperature, percentage of 4-coordinated B, enthalpy of glass formation - and infrared spectroscopy results indicate that structural effects differ based on the glass series.

Nuclear Waste Glass↗

DOE OSTI2023

Vapor-phase grafting of functional silanes on atomic layer deposited Al 2 O 3

Fundamental studies are needed to advance our understanding of selective adsorption in aqueous environments and develop more effective sorbents and filters for water treatment. Vapor-phase grafting of functional silanes is an effective method to prepare well-defined surfaces to study selective adsorption. In this investigation, we perform vapor phase grafting of five different silane compounds on aluminum oxide (Al2O3) surfaces prepared by atomic layer deposition. These silane compounds have the general formula L3Si–C3H6–X where the ligand, L, controls the reactivity with the hydroxylated Al2O3 surface and the functional moiety, X, dictates the surface properties of the grafted layer. We study the grafting process using in situ Fourier transform infrared spectroscopy and ex situ x-ray photoelectron spectroscopy measurements, and we characterize the surfaces using scanning electron microscopy, atomic force microscopy, and water contact angle measurements. Here, we found that the structure and density of grafted aminosilanes are influenced by their chemical reactivity and steric constraints around the silicon atom as well as by the nature of the anchoring functional groups. Methyl substituted aminosilanes yielded more hydrophobic surfaces with a higher surface density at higher grafting temperatures. Thiol and nitrile terminated silanes were also studied and compared to the aminosilane terminated surfaces. Uniform monolayer coatings were observed for ethoxy-based silanes, but chlorosilanes exhibited nonuniform coatings as verified by atomic force microscopy measurements.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on Al6CO7 by Materials Project

Al4O4CAl2O3 crystallizes in the trigonal R3m space group. The structure is two-dimensional and consists of three Al2O3 sheets oriented in the (0, 0, 1) direction and three Al4O4C sheets oriented in the (0, 0, 1) direction. In each Al2O3 sheet, there are two inequivalent Al3+ sites. In the first Al3+ site, Al3+ is bonded to six O2- atoms to form distorted AlO6 octahedra that share corners with three equivalent AlO4 tetrahedra and edges with six equivalent AlO6 octahedra. There are three shorter (1.87 Å) and three longer (2.16 Å) Al–O bond lengths. In the second Al3+ site, Al3+ is bonded to four O2- atoms to form AlO4 tetrahedra that share corners with three equivalent AlO6 octahedra and corners with six equivalent AlO4 tetrahedra. The corner-sharing octahedral tilt angles are 55°. There is one shorter (1.72 Å) and three longer (1.86 Å) Al–O bond length. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Al3+ atoms. In the second O2- site, O2- is bonded in a trigonal non-coplanar geometry to three equivalent Al3+ atoms. In the third O2- site, O2- is bonded in a trigonal non-coplanar geometry to three equivalent Al3+ atoms. In each Al4O4C sheet, there are four inequivalent Al3+ sites. In the first Al3+ site, Al3+ is bonded to six O2- atoms to form AlO6 octahedra that share corners with six AlC3O tetrahedra and edges with six equivalent AlO6 octahedra. There are three shorter (1.93 Å) and three longer (2.09 Å) Al–O bond lengths. In the second Al3+ site, Al3+ is bonded to three equivalent C4- and one O2- atom to form AlC3O tetrahedra that share corners with three equivalent AlO6 octahedra and corners with nine AlC3O tetrahedra. The corner-sharing octahedral tilt angles are 66°. All Al–C bond lengths are 1.86 Å. The Al–O bond length is 2.13 Å. In the third Al3+ site, Al3+ is bonded to four O2- atoms to form AlO4 tetrahedra that share corners with three equivalent AlO6 octahedra and corners with six equivalent AlO4 tetrahedra. The corner-sharing octahedral tilt angles are 58°. There is one shorter (1.79 Å) and three longer (1.83 Å) Al–O bond length. In the fourth Al3+ site, Al3+ is bonded to one C4- and three equivalent O2- atoms to form corner-sharing AlCO3 tetrahedra. The Al–C bond length is 1.94 Å. All Al–O bond lengths are 1.84 Å. C4- is bonded to four Al3+ atoms to form CAl4 tetrahedra that share corners with three equivalent OAl4 tetrahedra and corners with six equivalent CAl4 tetrahedra. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded to four Al3+ atoms to form OAl4 tetrahedra that share corners with three equivalent CAl4 tetrahedra, corners with six equivalent OAl4 tetrahedra, corners with three equivalent OAl4 trigonal pyramids, and edges with three equivalent OAl4 trigonal pyramids. In the second O2- site, O2- is bonded to four Al3+ atoms to form a mixture of distorted edge and corner-sharing OAl4 trigonal pyramids. In the third O2- site, O2- is bonded in a trigonal non-coplanar geometry to three equivalent Al3+ atoms. In the fourth O2- site, O2- is bonded in a trigonal non-coplanar geometry to three equivalent Al3+ atoms.

36 MATERIALS SCIENCE↗

DOE OSTI2022

High Performance Circuit Pastes for Solid Oxide Fuel Cell Applications: Final Technical Report

Using a combination of in-plane electrical conductivity measurements, electrical contact resistance measurements, tensile fracture tests, double shear lap fracture tests, rapid thermal cycling adhesion tests, in situ wetting angle measurements, 3D X-ray tomography, reduction-oxidation (RedOx) cycling, scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDAX), Density Functional Theory (DFT) modeling, Molecular Dynamics (MD) modeling, and Phase Field modeling, this project determined that a new brazing technique developed by the PIs (specifically the use of nickel particles to direct the wetting and spreading of molten silver) could be used to produce well-adhered, >97% dense, electrically-conductive circuits, current collectors, and/or electrical contacts on a variety of ceramic and ceramic-coated substrates (specifically lanthanum strontium manganite, yttria stabilized zirconia, sapphire, Cr2O3-passivated stainless steel, and Al2O3-passivated stainless steel). Compared to other silver-based alternatives, Ag:Ni led to less manufacturing defects and was more tolerant of the extreme environments (isothermal high-temperature aging) and occasional abuse (rapid thermal cycling and RedOx cycling) encountered during Solid Oxide Fuel Cell and/or Solid Oxide Electrolysis Cell operation. Further, in some situations (such as when to produce Ag:Ni electrical contacts to Al2O3-protected stainless steel) the Ni particles also improved operation by acting as chemical getters that removed electrically-insulating, surface-segregating substrate impurities (i.e. by lowering the contact resistance with the underlying substrate).

36 MATERIALS SCIENCE↗

DOE OSTI2026

Enhanced HLW glass property-composition models - phase 3

During the present phase (Phase 3) of work to enhance and expand the HLW glass property-composition models, test data for 137 glasses were collected and incorporated into the combined WTP/ORP database. The new data include those collected on glasses from two statistically designed matrices to augment the moderate alumina region (the HLW16-MA matrix covering the region of 9 wt% < Al2O3 < 12 wt% with 16 glasses) and the ultra-high alumina region (the HLW16-UHA matrix covering the region of 26 wt% < Al2O3 < 29 wt% with 29 glasses). The addition of ORP glasses over the different phases of testing has significantly expanded the combined WTP/ORP database. The compiled data include glass compositions, PCT (B, Li and Na) releases, spinel T1%, electrical conductivity, viscosity, TCLP-Cd releases, and nepheline formation upon CCC. With the exception of the CCC spinel formation data – the CCC data will be used to support the further development of nepheline models for Hanford HLW glasses.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2020

Coated U3Si2 pellets with enhanced water and steam oxidation resistance

A method of forming a water resistant boundary on a fissile material for use in a water cooled nuclear reactor is described. The method comprises coating the fissile material, such as a pellet of U3Si2 and/or the grain boundaries, to a desired thickness with a suitable coating material, such as atomic layer deposition or a thermal spray process. The coating material may be any non-reactive material with a solubility at least as low as that of UO2. Exemplary coating materials include ZrSiO4, FeCrAl, Cr, Zr, Al—Cr, CrAl, ZrO2, CeO2, TiO2, SiO2, UO2, ZrB2, Na2O—B2O3—SiO2—Al2O3 glass, Al2O3, Cr2O3, carbon, and SiC, and combinations thereof. The water resistant layer may be overlayed with a burnable absorber layer, such as ZrB2 or B2O3—SiO2 glass.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2020

Photonic near infrared heater

A multilayer photonic stack comprising a lower plurality of alternating layers comprising at least A and B and an upper plurality of alternating layers comprising at least C and D, layer A comprises at least one of Al, Au, W, Ag, Ni, Ti, Pt, and Cr, layer B comprises at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO), and layers C and D comprise at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO).

Prasher, Ravi Shankar↗

DOE OSTI2021

High Temperature Oxidation Behavior of Fe- and Ni-Based Alloy Foils in Water Vapor at 850 °C

Operating temperatures above 700°C are desired to improve the efficiency of power generation systems such as microturbines. Therefore, the use of creep-resistant Ni-based or Fe-based alloys, which can form protective Cr2O3 and Al2O3 scales, is required. In this paper, Fe- and Ni-based alloy foils were oxidized in air + 10 % H2O for up to 3,000 h at 850°C to identify the most promising alloys. The thickness and chemical composition of the spinel oxide formed on top of the Cr2O3 scale varied between S3100, N08120 and N06230 alloy foils. In addition, the rate of Cr and Mn loss (spinel and Cr2O3 oxidation and volatilization) or Al loss (oxidation) and the dissolution of strengthening precipitates, were found to be a function of the nature of the formed oxide (Fe or Ni-rich spinel, Cr2O3, Al2O3). Alloys N06230 and alumina-forming austenitic (AFA) steels were found to be well-suited for the applications as microturbine recuperator foil materials up to 850°C.

Romedenne, Marie↗

DOE OSTI2021

HIGH POWER COUPLER DEVELOPMENT FOR EIC

The synchrotron radiation loss in EIC Electron Storage Ring is as high as up to 10 MW. This energy loss will be compensated by 17 2K 591 MHz single-cell SRF cavities with a combined total of 34 high power fundamental power couplers. Each power coupler will operate 92% of revolution time CW and ~8% of revolution time with 400 kW forward power due to the beam abort gap. To satisfy the EIC needs, we developed two 500 kW standing-wave FPC designs at BNL based on either a BeO and an Al2O3 RF window. This paper will briefly summarize test results of the BeO window FPC, and describe the design development of the Al2O3 window based FPC.

43 PARTICLE ACCELERATORS↗

DOE OSTI2020

Elastic NaxMoS2-carbon-BASE triple interface direct robust solid-solid interface for all-solid-state Na-S batteries

The promises of all-solid-state (ASS) sodium batteries for the next generation energy storage are widely recognized but their developments have been severely constrained by the difficulties to design favorable solid-solid interfaces for unhindered Na-ion transport. Using the most promising ß?-Al2O3 solid state electrolyte (BASE) as a platform, we demonstrate here a triple nanojunction strategy that provides simultaneous strong Na adhesion and continuous Na-ions diffusion at solid-solid interface. Such triple junctions (NaxMoS2-carbon-BASE) were constructed by adhering ternary composite Na anodes containing dispersed 3 wt% MoS2 and 3 wt% carbon on BASE, and provide nearly complete adhesion of Na on BASE with a much smaller contact angle (~ 45o vs. 120o of pristine Na). The composite Na anodes exhibited ~ 3 times improved elastic property and the synergy of NaxMoS2 and carbon provides the required ionic and electronic diffusion channels at solid-solid interface, which significantly improve Na utilization and resist premature failure due to loss of solid-solid contact as Na shrink during high capacity stripping. As a result, Na metal at the triple junction exhibited more than five time reduced charge transfer resistance and at least 200 hours stable battery cycling at practical current densities. The novel anode architecture also enabled high capacity cycling of prototype ASS sodium sulfur batteries when coupled with advanced sulfur cathodes containing intrinsic Na-ions diffusion channels and redox catalytic mediators, leading to stable cycling with specific capacity of 1110 mAh g-1.

ß”-Al2O3 solid electrolyte, solid state batteries,↗

DOE OSTI2025

Nonpyrophoric alternative to trimethylaluminum for the atomic layer deposition of Al 2 O 3

We have examined the atomic layer deposition (ALD) of Al 2 O 3 using a nonpyrophoric precursor, which possesses only Al–N bonds and no Al–C bonds: Al(N(CH 3 ) 2 ) 2 (–N(C 2 H 5 )–C 2 H 4 –N(C 2 H 5 ) 2 ), which we refer to as bis-dimethylamino-diamino-aluminum (BDMADA-Al). We employed a quartz crystal microbalance (QCM) to monitor ALD in situ and in real time, and the deposited thin films have been characterized using x-ray photoelectron spectroscopy, spectroscopic ellipsometry, x-ray reflectivity, and atomic force microscopy. Films deposited with BDMADA-Al result in near-stoichiometric Al2O3 at temperatures ranging from T = 120 to 285 °C using H 2 O as the coreactant and at T = 285 °C using t-BuOH as the coreactant. The properties of the films (density, C incorporation, stoichiometry, growth rates) are comparable using either BDMADA-Al or trimethylaluminum (TMA) as the precursor under similar reaction conditions. The N content in the films deposited with BDMADA-Al as the precursor is <1% at both T = 120 and 285 °C. Additionally, both BDMADA-Al|t-BuOH and TMA|t-BuOH processes deposit near-stoichiometric Al 2 O 3 at T = 285 °C, while neither process chemistry produces a constant growth rate per cycle at T = 120 °C. Close examination of single cycle QCM data from BDMADA-Al ALD indicates unique ligand exchange reaction mechanisms during each of the half-reactions. Experimentally, we have evidence supporting the mechanism in which upon the chemisorption of BDMADA-Al, the species on the surface retains the –N(CH 3 ) 2 ligands, while the diamine ligand is mostly lost on dissociative adsorption, except possibly at the higher temperature (285 °C). As a result, our work demonstrates that BDMADA-Al can be used as an effective alternative precursor to TMA for the ALD of Al 2 O 3 .

36 MATERIALS SCIENCE↗

DOE OSTI2026

A Dendrite-Resistant Sodium/Porous-Carbon Anode for Solid-State Batteries – Strategies and Challenges for Low-Pressure Operation

Sodium solid-state batteries (Na-SSB) have gained interest recently due to the abundance of Na over Li, but they still tend to fail due to dendrites under practical current densities and cycling capacities. To overcome this, Na-SSBs are frequently tested with impractically high applied pressure. In this work, a porous carbon interfacial layer is utilized in conjunction with Na-ß”-Al2O3 solid electrolytes to enable Na-cycling at milder cell pressures. This sodium/porous carbon layer enables improved solid-state Na cycling in symmetric cells, up to a current density of 10 mA cm-2 at 25 °C. Cycling up to 1 mAh cm-2 is challenging with low pressure, but 1 mAh cm-2 capacity can be reliably cycled at 1 mA cm-2 at an elevated temperature of 60 °C in symmetric cells. Finally, the evolution of the interface and sodium/carbon anode is evaluated with cryogenic ion-milling and cross-sectional imaging revealing that, depending on testing temperature, pressure, current density, and capacity, void formation, Na-extraction from porous carbon, delamination of the porous carbon matrix, or a combination of these occurs at the interface between Na-metal and BASE. Despite this, excellent dendrite resistance is achieved, and a full-cell design utilizing a Na-transition metal oxide cathode is still able to achieve an areal capacity of ~ 2.7 mAh cm-2 at 0.125 mA cm-2. This work demonstrates an alternative pathway toward a Na-metal anode for Na-SSBs without the requirement of excessive stack pressure.

low-cost↗