Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “ASPECT RATIO”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5

High aspect ratio organic light-emitting diodes

Reliability is particularly challenging for organic light-emitting diodes (OLEDs) used in solid-state lighting applications, because OLED lifetime is inversely proportional to luminance, and most lighting applications demand high luminance. Here we introduce a strategy to overcome this tradeoff by constructing OLEDs on a substrate with sub-mm, high aspect ratio surface texture. By creating more active OLED area per unit lighting panel area, the device current density required to generate a given panel luminance decreases. We validate this approach for fluorescent and phosphorescent OLEDs, demonstrating good thickness uniformity on corrugated substrates with area enhancement factors up to 1.4x using a standard thermal evaporator. Relative to planar controls at the same panel current density, the high aspect ratio devices achieve a 2.7-fold increase in operating lifetime and up to a 40% increase in external light extraction efficiency, indicating that this approach offers a powerful pathway to improve the efficiency and lifetime of OLED lighting.

OLED↗

Inverse aspect-ratio expanded tokamak equilibria

Following Greene et al. [Phys. Fluids 14, 671 (1971)] and Connor et al. [Phys. Plasmas 31, 577 (1988); Plasma Phys. Control. Fusion 34, 161 (1992); and Nucl. Fusion 33, 1533 (1993)], the Grad-Shafranov equation for an axisymmetric tokamak plasma equilibrium is solved via an expansion in the, supposedly small, inverse aspect-ratio of the plasma, ϵ. The displacements of equilibrium magnetic flux-surfaces due to plasma shaping are assumed to be $\mathcal{O}$(ϵ) smaller than the minor radii of the surfaces, but no other restriction is placed on the nature of the shaping. The solution of the Grad-Shafranov equation is matched to a vacuum solution that extends to infinity, and consists of an expansion in toroidal functions. The external poloidal magnetic field generated by a finite set of discrete external poloidal magnetic field-coils is calculated, and incorporated into the toroidal function expansion. In this manner, the shape of a large aspect-ratio tokamak plasma is directly related to the currents flowing in the external poloidal field-coils. Finally, a pedestal in the plasma pressure, and the associated spike in the bootstrap current, are incorporated into the model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Analytical Model for Atomic-Layer Deposition of Thin Films on the Walls of Cylindrical Holes with a Relatively High Aspect Ratio

A theoretical model that predicts the thickness of a film grown on the walls of high-aspect-ratio cylindrical hole using the atomic-layer deposition is proposed. The model can be used to calculate the critical time of precursor supply needed for conformal coating of the walls. An analytical model is derived to estimate the minimum time of precursor supply versus parameters of the technological process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Molecular aspect ratio effect on axial thermal transport in solution-spun carbon nanotube fibers

Neat, densely packed, and highly aligned carbon nanotube fibers (CNTFs) have appealing room-temperature axial thermal conductivity (⁠k⁠) and thermal diffusivity (⁠α⁠) for applications in lightweight heat spreading, flexible thermal connections, and thermoelectric active cooling. Although CNTFs are regularly produced from different input carbon nanotubes (CNTs), prior work has not quantified how the CNT molecular aspect ratio r (i.e., molecular length-to-diameter ratio) influences k and in well-aligned, packed CNTFs. Here, we perform self-heated steady-state and three-omega thermal measurements at room temperature on CNTF suspended in vacuum. Our results show that k increases from 150 to 380 W / mK for viscosity-averaged molecular aspect ratios increasing from r = 960 to 5600 and nanotube diameters of ~2 nm, which we attribute to the effects of thermal resistances between CNT bundles. CNTFs made with varying volume fraction Φ of constituent high-r and low-r CNT have properties that fall within or below the typical macroscopic rule-of-mixtures bounds. The thermal diffusivity α scales with k, leading to a sample-averaged volumetric heat capacity of 1.5 ± 0.3 MJ / m 3 K⁠. This work's findings that fibers made from longer CNT have larger k and α at room temperature motivate further investigation into thermal transport in solution-spun CNTF.

42 ENGINEERING↗

Anisotropy, size, and aspect ratio effects on micropillar compression of Al-SiC nanolaminate composites

Metal-ceramic nanolaminate composites show promise as high strength and toughness materials. Micropillar compression was used to characterize the mechanical behavior of AlSiC multilayers in different orientations including loading at 0°, 45° and 90° with respect to the direction of the layers. The 0° orientation showed the highest strength while the 45° orientation showed the lowest strength. Each orientation showed unique deformation behavior. Effects of pillar size and aspect ratio were also studied. Higher compressive strengths were observed in smaller pillars for all orientations. This effect was shown to be due to a lower probability of flaws using Weibull statistics. Additionally, changes in the aspect ratio was shown to have no significant effect on the behavior except an increase in the strain to failure in the 0° orientation. In conclusion, finite element analysis (FEA) was used to simulate and understand the effect of these parameters on the deformation behavior.

36 MATERIALS SCIENCE↗

A flux-balanced fluid model for collisional plasma edge turbulence: Numerical simulations with different aspect ratios

We investigate the drift wave–zonal flow dynamics in a shearless slab geometry with the new flux-balanced Hasegawa-Wakatani model. As in previous Hasegawa-Wakatani models, we observe a sharp transition from a turbulence dominated regime to a zonal jet dominated regime as we decrease the plasma resistivity. However, unlike previous models, zonal structures are always present in the flux-balanced model, even for high resistivity, and strongly reduce the level of particles and vorticity flux. The more robust zonal jets also have a higher variability than in previous models, which is further enhanced when the computational domain is chosen to be elongated in the radial direction. In these cases, we observe complex multiscale dynamics, with multiple jets interacting with one another, and intermittent bursts. We present a detailed statistical analysis which highlights how the changes in the aspect ratio of the computational domain affect the third-order statistical moments, and thus modify the turbulent dynamics. By changing the aspect ratio and extending either the radial or the binormal direction, the present model study offers a better approximation to mimic turbulence in flux tube simulations for either very low magnetic shear or very high magnetic shear systems.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Integrable perturbed magnetic fields in toroidal geometry: An exact analytical flux surface label for large aspect ratio

An analytical description of magnetic islands is presented for the typical case of a single perturbation mode introduced to tokamak plasma equilibrium in the large aspect ratio approximation. Following the Hamiltonian structure directly in terms of toroidal coordinates, the well known integrability of this system is exploited, laying out a precise and practical way for determining the island topology features, as required in various applications, through an analytical and exact flux surface label.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of ion and electron distributions on etch profiles

The quality of high aspect ratio (HAR) features etched into dielectrics for microelectronics fabrication using halogen containing low temperature plasmas strongly depends on the energy and angular distribution of the incident ions (IEAD) onto the wafer, as well as potentially that of the electrons (EEAD). Positive ions, accelerated to high energies by the sheath electric field, have narrow angular spreads and can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal energy and isotropic angular distributions and so do not directly penetrate deeply into features. These differences can lead to positive charging of the insides of the features that can slow etching rates and produce geometric defects such as twisting. In this work, we computationally investigated the plasma etching of HAR features into SiO 2 using tailored voltage waveforms in a geometrically asymmetric capacitively coupled plasma sustained in an Ar/CF 4 /O 2 mixture at 40 mTorr. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. We found that some degree of control of the IEADs and EEADs is possible by adjusting the phase of higher harmonics φ through the resulting generation of electrical asymmetry and electric field reversal. However, the IEADs and EEADs cannot easily be separately controlled. The control of IEADs and EEADs is inherently linked. The highest quality feature was obtained with a phase angle φ = 0° as this value generated the largest (most negative) DC self-bias and largest electric field reversal for accelerating electrons into the feature. That said, the consequences of voltage waveform tailoring (VWT) on etched features are dominated by the change in the IEADs. Although VWT does produce EEADs with higher energy and narrower angular spread, the effect of these electrons on the feature compared to thermal electrons is not large. Finally, this smaller impact of VWT produced EEADs is attributed to thermal electrons being accelerated into the feature by electric fields produced by the positive in-feature charging.

47 OTHER INSTRUMENTATION↗

Calculation of tearing mode stability in an inverse aspect-ratio expanded tokamak plasma equilibrium

The tearing mode stability of an inverse aspect-ratio expanded tokamak plasma equilibrium of general shape is investigated using asymptotic matching techniques. Particular emphasis is placed on the conservation of toroidal electromagnetic angular momentum. The TJ code, which is a specific implementation of the results of the investigation, is described.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

High Aspect Ratio Semiconductor Heterojunction Solar Cells

The project focused on the development of high aspect ratio silicon heterojunction (HARSH) solar cells. The solar cells developed in this study consisted of high density vertical arrays of radial junction silicon microwires/pillars formed on Si substrates. Prior studies have demonstrated that vertical Si wire/pillar arrays enable reduced reflectivity and improved light trapping characteristics compared to planar solar cells. In addition, the radial junction structure offers the possibility of increased carrier collection in solar cells fabricated using material with short carrier diffusion lengths. However, the high junction and surface area of radial junction Si wire/pillar array devices can be problematic and lead to increased diode leakage and enhanced surface recombination. This study investigated the use of amorphous hydrogenated Si in the form of a heterojunction-intrinsic-thin layer (HIT) structure as a junction formation method for these devices. The HIT layer structure has widely been employed to reduce surface recombination in planar crystalline Si solar cells. Consequently, it was anticipated that it would also provide significant benefits to the performance of radial junction Si wire/pillar array devices. The overall goals of the project were to demonstrate a HARSH cell with a HIT-type structure in the radial junction Si wire/pillar array configuration and to develop potentially low cost pathways to fabricate these devices. Our studies demonstrated that the HIT structure lead to significant improvements in the open circuit voltage (V oc >0.5) of radial junction Si pillar array devices compared to devices fabricated using junctions formed by thermal diffusion or low pressure chemical vapor deposition (LPCVD). In addition, our work experimentally demonstrated that the radial junction structure lead to improvements in efficiency compared to comparable planar devices for devices fabricated using heavily doped Si that had reduced carrier diffusion lengths. Furthermore, we made significant advances in employing the bottom-up vapor-liquid-solid (VLS) growth technique for the fabrication of the Si wire arrays. Our work elucidated the effects of growth conditions and substrate pattern geometry on the growth of large area Si microwire arrays grown with SiCl4. In addition, we also developed a process to grow p-type Si nanowire arrays using aluminum as the catalyst metal instead of gold. Finally, our work demonstrated the feasibility of growing vertical arrays of Si wires on non-crystalline glass substrates using polycrystalline Si template layers. The accomplishments demonstrated in this project will pave the way for future advances in radial junction wire array solar cells.

14 SOLAR ENERGY↗

Highly aligned arrays of high aspect ratio barium titanate nanowires via hydrothermal synthesis

We report on the development of a hydrothermal synthesis procedure that results in the growth of highly aligned arrays of high aspect ratio barium titanate nanowires. Using a multiple step, scalable hydrothermal reaction, a textured titanium dioxide film is deposited on titanium foil upon which highly aligned nanowires are grown via homoepitaxy and converted to barium titanate. Scanning electron microscope images clearly illustrate the effect the textured film has on the degree of orientation of the nanowires. The alignment of nanowires is quantified by calculating the Herman's Orientation Factor, which reveals a 58% improvement in orientation as compared to growth in the absence of the textured film. The ferroelectric properties of barium titanate combined with the development of this scalable growth procedure provide a powerful route towards increasing the efficiency and performance of nanowire-based devices in future real-world applications such as sensing and power harvesting.

36 MATERIALS SCIENCE↗

Selecting the independent coordinates of manifolds with large aspect ratios

Many manifold embedding algorithms fail apparently when the data manifold has a large aspect ratio (such as a long, thin strip). Here, we formulate success and failure in terms of finding a smooth embedding, showing also that the problem is pervasive and more complex than previously recognized. Mathematically, success is possible under very broad conditions, provided that embedding is done by carefully selected eigenfunctions of the Laplace-Beltrami operator Δ. Hence, we propose a bicriterial Independent Eigencoordinate Selection (IES) algorithm that selects smooth embeddings with few eigenvectors. The algorithm is grounded in theory, has low computational overhead, and is successful on synthetic and large real data.

Meila, Marina↗

Atomic Layer Deposition of Thin Films onto 3D Nanostructures: The Effect of Wall Tilt Angle and Aspect Ratio of Trenches

A theoretical model predicting the spatial profile of a film grown on walls by atomic layer deposition (ALD) is developed. The possible initial nonverticality of trench walls and the dynamic variation of the aspect ratio of the structure in the process of film growth in nanosized trenches are considered in this model. The dependence of the resulting film thickness and conformity on ALD process parameters is studied theoretically.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Adaptive AFM scan speed control for high aspect ratio fast structure tracking

Improved imaging rates in Atomic Force Microscopes (AFM) are of high interest for disciplines such as life sciences and failure analysis of semiconductor wafers, where the sample topology shows high aspect ratios. Also, fast imaging is necessary to cover a large surface under investigation in reasonable times. Since AFMs are composed of mechanical components, they are associated with comparably low resonance frequencies that undermine the effort to increase the acquisition rates. In particular, high and steep structures are difficult to follow, which causes the cantilever to temporarily loose contact to or crash into the sample. Here, we report on a novel approach that does not affect the scanner dynamics, but adapts the lateral scanning speed of the scanner. The controller monitors the control error signal and, only when necessary, decreases the scan speed to allow the z-piezo more time to react to changes in the sample's topography. In this case, the overall imaging rate can be significantly increased, because a general scan speed trade-off decision is not needed and smooth areas are scanned fast. In contrast to methods trying to increase the z-piezo bandwidth, our method is a comparably simple approach that can be easily adapted to standard systems.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

PEDOT:PSS/GO nanocomposites: Determination of the aspect ratio by indirect measurements

Polymer nanocomposites properties significantly depend on the average size of the fillers dispersed into the matrix and on the grade of the dispersion, the latter influenced by the process techniques. In this work, we determined the aspect ratio of graphene oxide (GO) dispersed into Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), starting from the indirect measurement of the rheological behavior of polymer/filler mixtures, as a function of the shear rate and the volumetric composition. PEDOT:PSS+GO nanocomposite films were also realized by spin coating on different substrates and characterized by Scanning electron microscopy (SEM) and X-ray diffraction (XRD), in order to analyze the quality of the dispersion, even by direct measurements.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Morphology and aspect ratio of bismuth nanoparticles embedded in a zinc matrix

Nanoscale Bi particles embedded in a Zn matrix were obtained by casting and melt-spinning, resulting in quenching rate-dependent sizes and shapes. With decreasing Bi particle size, an increasing aspect ratio was observed. Due to high resolution transmission electron microscopy performed for different orientations of the nanoparticles and the matrix, the three-dimensional shape and the respective crystallographic orientations of the Bi nanoparticles as well as the orientation relationship with the matrix have been evaluated. It is suggested that the size-dependence of the nanoparticle morphologies has a strong impact on their thermal stabilities thus affecting the size dependence of the melting temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

The Young's modulus of high-aspect-ratio carbon/carbon nanotube composite microcantilevers by experimental and modeling validation

This paper reports the Young's modulus of a carbon nanotube (CNT)-reinforced carbon/CNT (C/CNT) composite microcantilevers measured by laser Doppler vibrometer and validated by finite element method. Also, the microfabrication process of the high-aspect-ratio C/CNT microcantilever arrays based on silicon micromolding and pyrolysis is presented in detail. With the in-plane natural resonant frequencies of the microcantilevers measured by a laser Doppler vibrometer, a single degree of freedom (SDoF) model based on Euler-Bernoulli (E-B) beam theory is used to calculate the Young's modulus of this composite. To figure out whether this SDoF model can be applied to these composite microcantilevers, the finite element (FE) simulation of these microcantilevers was performed. The Young's modulus of C/CNT composite microcantilevers fabricated by the pyrolysis process at 600 °C is 9391 MPa, and a good agreement between the results from experiments and FE simulation is obtained.

77 NANOSCIENCE AND NANOTECHNOLOGY↗