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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. Here, the reflectivity is determined to be 25–36 % at an angle of incidence of 20° for the four samples and increases to up to 65 % at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

(pin diodes, APDs, SiPMs, G-APDs, CCDs, EBCCDs, EM↗
DOE OSTI2022

Genetic mapping of sugarcane aphid resistance in sorghum line SC112-14

Sugarcane aphid [Melanaphis sacchari (Zehntner)] is a destructive pest that has had an economic effect on sorghum in North America since 2013. The identification, development, and use of resistant sorghum germplasm is the most feasible strategy to control the pest. Nevertheless, the genetic control of sugarcane aphid (SCA) resistance is unknown for most sorghum resistant lines. To identify the genetic regions that confer SCA resistance in sorghum line SC112-14, 103 recombinant inbred lines (RILs) derived by its cross with the susceptible line PI 609251 were evaluated for their SCA resistance response in Georgia during two consecutive years. The resistance response was determined based on two ratings (2 wk apart) for aphid population size (APS) and aphid-induced plant damage (APD) each year. Segregation for SCA resistance was observed for the first APS and both APD ratings, and the broad-sense heritability estimate ranged from .71 to .76, respectively. A quantitative trait locus analysis using a high-density linkage map of 3,852 single nucleotide polymorphisms (SNPs) detected an 81-kb genomic region on chromosome 6 that explained 50–55% of the phenotypic variation. Comparative mapping analysis found that the resistance locus in SC112-14 is located 8- and 10-cM upstream of the Henong 16 (RMES1) and Tx2783 resistance loci, respectively, and encloses the SNP Sbv3.1_06_2316351 associated in Haitian resistant lines. Therefore, the line SC112-14 is an additional SCA resistance source that can be combined or strategically used with other resistance sources to assure a more robust host plant resistance to the SCA.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2021

Bias-dependent displacement damage effects in a silicon avalanche photodiode

Radiation effects studies on a commercial beveled-edge avalanche photodiode (APD) showed that applying reverse bias to the device during irradiation enhanced the severity of apparent damage. Proton microbeam irradiations were made using a proton beam energy of 2 MeV and fluence ranging from 2.0 × 10 10 to 5.1 × 10 12 cm -2 . Charge collection measurements using the ion beam induced charge (IBIC) technique showed that relative losses increased by up to an order of magnitude when the reverse bias applied during irradiation increased from 50 to 1500 V. The presence of reverse bias also led to equivalent losses in charge collection that would only be seen in irradiations with an order of magnitude higher fluence in unbiased APDs. The results demonstrate that bias-enhanced irradiation damage is insufficiently understood and must be accounted for in characterizations of radiation effects.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Long‐Term Impacts of Global Solid Biofuel Emissions on Ambient Air Quality and Human Health for 2000–2019

Globally, solid biofuels (SB) have been widely used for household cooking and energy production for decades due to electricity shortages and socio-economic barriers to adopting renewable energy alternatives. This has detrimental effects on air quality, human health, and climate through trace gas and aerosol emissions. Despite numerous studies, the long-term consequences of SB emissions remain poorly understood. Here, we use the Community Earth System Model and the Community Emissions Data System emission inventory to investigate the SB emission impacts on air quality and human health for 2000–2019. Global SB emission increased the ambient PM 2.5 (particulate matter with aerodynamic diameters ≤2.5 μm) and ozone (O 3 ) concentrations up to 23.61 μg/m 3 and 13.69 ppbv, with significant effects found in India, China, and the Rest of Asia (ROA). Our study estimates total annual premature deaths (APDs) associated with global SB-attributable PM 2.5 and O 3 exposure as 1.11 million [95% confidence interval (95% CI): 1.00–1.22 million] in 2000 up to 1.43 million (95% CI: 1.30–1.56 million) in 2019. China's SB emissions and associated APDs have reduced substantially, whereas India and ROA had a major leap in both estimates in 2019 compared to 2000. China's progress in cutting residential SB emissions accounts for its improvements. Our study urges the reduction of SB usage and emissions to potentially improve overall air quality and human health conditions, especially in highly populated, low- and middle-income countries, where the poor air quality and associated health burden attributable to SB emissions are estimated to be higher.

O 3↗
DOE OSTI2023

Microstructure-Property Relationships in Epitaxial Cu(In, Ga)Se2 Solar-Cell Absorbers

Epitaxially grown Cu(In,Ga)Se 2 (CIGS) absorber layers were analyzed by various techniques in scanning electron microscopy in order to reveal microstructure-property relationships in these thin films. Owing to their epitaxial nature, these CIGS absorber layers do not contain any grain boundaries, but only anti-phase domains (APDs) and dislocations. By combining electron channeling-contrast imaging, electron backscatter diffraction, and cathodoluminescence (CL), in some cases on identical specimen positions of polished cross-sections of CIGS/Mo/glass stacks, it was possible to correlate the presence and orientations of APDs and dislocations with the lateral distributions of the CL intensity and emission-peak energy. We studied CIGS layers with three different [Ga]/([Ga]+[In]) ratios as well as with and without NaF/KF treatments. Considerable differences between the CIGS layer properties in the microstructure-property relationships were found, depending on the growth parameters. Dislocations in the epitaxial CIGS layers do not tend to exhibit strong CL intensity decreases, which contrasts with the situation in numerous other semiconductor materials.

anti-phase domains↗
DOE OSTI2022

Comparison of CCM- and CRM-Based Boost Parallel Active Power Decoupler for PV Microinverter

Single-phase inverter or rectifier systems often make use of an active power decoupler (APD) to balance the mismatch between constant dc power and fluctuating ac power. This article deals with the comparison of continuous conduction mode (CCM) and critical conduction mode (CRM) operation-based design of a parallel boost-type APD for photovoltaic microinverter applications. From a design perspective, multiobjective analysis of efficiency, volume, and cost is explored within a decision space including planar inductors, gallium nitride based devices, film capacitors, switching frequency, and modulation (CCM vs. CRM). The theoretical study analyzes all possible design configurations within CCM and CRM and identifies Pareto-optimal designs, from which the selected CRM design can achieve reduced system volume and lower cost with the use of smaller inductor core, while operating with similar California Energy Commission efficiency drop as the selected CCM design. From a control perspective, a pulsewidth modulation based control strategy is proposed to implement closed-loop CRM modulation that does not rely on zero-crossing detection. Furthermore, closed-loop systems are designed for the optimal CCM and CRM realizations, and the final system characteristics are compared. Experimental results, obtained using two separate 40-V, 400-W hardware prototypes for CCM and CRM, are presented to verify the analyses.

42 ENGINEERING↗
DOE OSTI2022

7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection

This article proposes a multiport modular single-stage current-source solid-state transformer (SST) for applications like photovoltaic, energy storage integration, electric vehicle fast charging, data center, etc. The 7.2 kV 50 kVA current-source SST consists of five input-series output-parallel modules, each based on 3.3 kV SiC reverse-blocking MOSFET-plus-diode modules. The proposed SST has some unique features. First, compared to the voltage-source or matrix converter-based SSTs, the current-source SST has a unique advantage of single-stage isolated AC/DC or AC/AC conversion with an inductive DC link, but no medium-voltage (MV) AC experiments have been reported. This article for the first time demonstrates MV AC current-source SST up to 7.5 kV peak. Second, the multiport SST has a buffer port for active power decoupling (APD) or energy storage integration. The double-line-frequency power ripple from single-phase AC grid normally results in a large capacitor size in MV SSTs. The APD scheme is proposed in MV applications for the first time to enable a reduced DC link and the electrolytic capacitor-less SST with high reliability. Third, as a direct grid-connected converter without line-frequency transformer, insulation and protection are critical. A medium-frequency transformer design passes 55 kV basic-insulation level (BIL) and 60 kV high potential dielectrics withstand test with only 0.09% leakage inductance. Importantly, a lightning protection scheme is presented to protect the SST itself from 90 kV BIL impulse. Fourth, the proposed current-source SST topology is a modular soft-switching solid-state transformer (M-S4T) with full-range zero-voltage switching and controlled dv/dt for low electromagnetic interference. Furthermore, these concepts are verified in a three-port M-S4T prototype with forced oil cooling under single-module, stacked-module, steady-state, and dynamic operations.

14 SOLAR ENERGY↗
DOE OSTI2025

Characterization of High Speed Optical and Magnetic Interactions in Superconducting Nanowire Single Photon Detectors

Single-photon detectors are essential tools for quantum photonics. The ideal single photon detector would exhibit a quantum efficiency (QE) of 100% (i.e. no false negatives), zero dark photon counts per second (i.e. no false positives), zero dead time (i.e. the detector is capable of detecting one photon immediately after another), and zero jitter (i.e. the electrical signal produced by the detector perfectly reproduces the timing of the input photon signal). Commercially available avalanche photodiodes (APDs) have generally performed reasonably well for visible wavelengths but they perform poorly at longer wavelengths. For wavelengths spanning the near- ultraviolet (UV) to the mid- infrared (IR), superconducting nanowire single photon detectors (SNSPDs) can exhibit quantum efficiencies exceeding 90% with dark count rates and timing jitter roughly an order of magnitude less than is typically seen in APDs. While SNSPDSs are now commercially available from several small businesses, fundamental questions about the nature of photon interactions with superconducting nanostructures remain.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1989

Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

Chen, C.-C.↗
NASA NTRS1991

Attitude profile design program

The Attitude Profile Design (APD) Program was designed to be used as a stand-alone addition to the Simplex Computation of Optimum Orbital Trajectories (SCOOT). The program uses information from a SCOOT output file and the user defined attitude profile to produce time histories of attitude, angular body rates, and accelerations. The APD program is written in standard FORTRAN77 and should be portable to any machine that has an appropriate compiler. The input and output are through formatted files. The program reads the basic flight data, such as the states of the vehicles, acceleration profiles, and burn information, from the SCOOT output file. The user inputs information about the desired attitude profile during coasts in a high level manner. The program then takes these high level commands and executes the maneuvers, outputting the desired information.

Source record↗
NASA NTRS1991

Design and testing of an active quenching circuit for an avalanche photodiode photon detector

The photon-detection capabilities of avalanche photodiodes (APDs) operating above their theoretical breakdown voltages are described, with particular attention given to the needs and methods of quenching an avalanche once breakdown has occurred. A brief background on the motives of and previous work with this mode of operation is presented. Finally, a description of the design and testing of an active quenching circuit is given. Although the active quenching circuit did not perform as expected, knowledge was gained as to the signal amplitudes necessary for quenching and the need for a better model for the above-breakdown circuit characteristics of the Geiger-mode APD.

Arbel, D.↗
NASA NTRS1990

Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

Ackley, D. E.↗
NASA NTRS1992

Receiver performance of laser ranging measurements between the Lunar Observer and a subsatellite for lunar gravity studies

The optimal receiver for a direct detection laser ranging system for slow Doppler frequency shift measurement is shown to consist of a phase tracking loop which can be implemented approximately as a phase lock loop with a 2nd or 3rd order loop filter. The laser transmitter consists of an AlGaAs laser diode at a wavelength of about 800 nm and is intensity modulated by a sinewave. The receiver performance is shown to be limited mainly by the preamplifier thermal noise when a silicon avalanche photodiode is used. A high speed microchannel plate photomultiplier tube is shown to outperform a silicon APD despite its relatively low quantum efficiency at wavelengths near 800 nm. The maximum range between the Lunar Observer and the subsatellite for lunar gravity studies is shown to be about 620 km when using a state-of-the-art silicon APD and about 1000 km when using a microchannel plate photomultiplier tube in order to achieve a relative velocity measurement accuracy of 1 millimeter per second. Other parameters such as the receiver time base jitter and drift also limit performance and have to be considered in the design of an actual system.

Davidson, Frederic M.↗
NASA NTRS1992

Tests of an alternate mobile transporter and extravehicular activity assembly procedure for the Space Station Freedom truss

Results are presented from a ground test program of an alternate mobile transporter (MT) concept and extravehicular activity (EVA) assembly procedure for the Space Station Freedom (SSF) truss keel. A three-bay orthogonal tetrahedral truss beam consisting of 44 2-in-diameter struts and 16 nodes was assembled repeatedly in neutral buoyancy by pairs of pressure-suited test subjects working from astronaut positioning devices (APD's) on the MT. The truss bays were cubic with edges 15 ft long. All the truss joint hardware was found to be EVA compatible. The average unit assembly time for a single pair of experienced test subjects was 27.6 sec/strut, which is about half the time derived from other SSF truss assembly tests. A concept for integration of utility trays during truss assembly is introduced and demonstrated in the assembly tests. The concept, which requires minimal EVA handling of the trays, is shown to have little impact on overall assembly time. The results of these tests indicate that by using an MT equipped with APD's, rapid EVA assembly of a space station-size truss structure can be expected.

Heard, Walter L., Jr.↗
NASA NTRS1993

An acoustic charge transport imager for high definition television applications

This report covers: (1) invention of a new, ultra-low noise, low operating voltage APD which is expected to offer far better performance than the existing volume doped APD device; (2) performance of a comprehensive series of experiments on the acoustic and piezoelectric properties of ZnO films sputtered on GaAs which can possibly lead to a decrease in the required rf drive power for ACT devices by 15dB; (3) development of an advanced, hydrodynamic, macroscopic simulator used for evaluating the performance of ACT and CTD devices and aiding in the development of the next generation of devices; (4) experimental development of CTD devices which utilize a p-doped top barrier demonstrating charge storage capacity and low leakage currents; (5) refinements in materials growth techniques and in situ controls to lower surface defect densities to record levels as well as increase material uniformity and quality.

Hunt, William D.↗
NASA NTRS1994

An acoustic charge transport imager for high definition television applications

The primary goal of this research is to develop a solid-state television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels/frame. This imager will offer an order of magnitude improvements in speed over CCD designs and will allow for monolithic imagers operating from the IR to UV. The technical approach of the project focuses on the development of the three basic components of the imager and their subsequent integration. The camera chip can be divided into three distinct functions: (1) image capture via an array of avalanche photodiodes (APD's); (2) charge collection, storage, and overflow control via a charge transfer transistor device (CTD); and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the optimization of each of these component devices. In addition to the development of each of the three distinct components, work towards their integration and manufacturability is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail.

Hunt, W. D.↗
NASA NTRS1994

Receiver design, performance analysis, and evaluation for space-borne laser altimeters and space-to-space laser ranging systems

This interim report consists of two reports: 'Space Radiation Effects on Si APDs for GLAS' and 'Computer Simulation of Avalanche Photodiode and Preamplifier Output for Laser Altimeters.' The former contains a detailed description of our proton radiation test of Si APD's performed at the Brookhaven National Laboratory. The latter documents the computer program subroutines which were written for the upgrade of NASA's GLAS simulator.

Davidson, Frederic M.↗
NASA NTRS1995

USF/Russian dosimetry on STS-57

The major purpose of this experiment was to conduct an international comparison of passive dosimetry methods in space. Two APD's were flown in the charged particle directional spectrometer (CPDS)/tissue equivalent proportional counter (TEPC) locker on the space shuttle during the STS-57 mission. Due to placement, the shielding and radiation environment of the APD's were nearly the same and the dosimeters distributed in the two boxes can be considered equally exposed. The dosimeter types included plastic nuclear track detectors (PNTD's), thermoluminescent detectors (TLD), nuclear emulsions, and thermal/resonance neutron detectors (TRND's). The USF dosimeters included PNTD's, TLD's, and TRND's, while the Russian dosimeters included PNTD's, TLD's, and nuclear emulsions.

Source record↗