Giant Pressure Dependence and Dimensionality Switching in a Metal-Organic Quantum Antiferromagnet
Not Available
Wehinger, B.↗
SEARCH · Engineering Papers
Results for “ANTIFERROMAGNETISM”
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Origin of itinerant carriers in antiferromagnetic LaFe 1-x MoxO 3 studied by x-ray spectroscopies
Abstract not provided
Phuyal, Dibya (ORCID:0000000303513138)↗
Collinear orbital antiferromagnetic order and magnetoelectricity in quasi-two-dimensional itinerant-electron paramagnets, ferromagnets, and antiferromagnets
Not Available
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Spin dynamics in the antiferromagnetic topological insulator MnBi4Te7
Contains python scripts used to process inelastic neutron scattering data on the spin dynamics in MnBi4Te7 at various temperatures. The nxs files are the complete data sets , the txt files contain data slices used for publication.
Li, Bing [Ames National Laboratory]↗
Prospects for Antiferromagnetic Spintronic Devices
This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.
36 MATERIALS SCIENCE↗
Nanoscale visualization of the thermally driven evolution of antiferromagnetic domains in FeTe thin films
Antiferromagnetic order, being a ground state of a number of exotic quantum materials, is of immense interest both from the fundamental physics perspective and for driving potential technological applications. For a complete understanding of antiferromagnetism in materials, nanoscale visualization of antiferromagnetic domains, domain walls, and their robustness to external perturbations is highly desirable. Here, we synthesize antiferromagnetic FeTe thin films using molecular-beam epitaxy. We visualize local antiferromagnetic ordering and domain formation using spin-polarized scanning tunneling microscopy. From the atomically resolved scanning tunneling microscopy topographs, we calculate local structural distortions to find a high correlation with the distribution of the antiferromagnetic order. This is consistent with the monoclinic structure in the antiferromagnetic state. Interestingly, we observe a substantial domain-wall change by small temperature variations, unexpected for the low-temperature changes used compared to the much higher antiferromagnetic ordering temperature of FeTe. This is in contrast to electronic nematic domains in the cousin FeSe multilayer films, where we find no electronic or structural change within the same temperature range. Further, our experiments provide the atomic-scale imaging of perturbation-driven magnetic domain evolution simultaneous with the ensuing structural response of the system. The results reveal surprising thermally driven modulations of antiferromagnetic domains in FeTe thin films well below the Néel temperature.
36 MATERIALS SCIENCE↗
Imaging mesoscopic antiferromagnetic spin textures in the dilute limit from single-geometry resonant coherent x-ray diffraction
The detection and manipulation of antiferromagnetic domains and topological antiferromagnetic textures are of central interest to solid-state physics. A fundamental step is identifying tools to probe the mesoscopic texture of an antiferromagnetic order parameter. In this work, we demonstrate that Bragg coherent diffractive imaging can be extended to study the mesoscopic texture of an antiferromagnetic order parameter using resonant magnetic x-ray scattering. We study the onset of the antiferromagnet transition in PrNiO 3 , focusing on a temperature regime in which the antiferromagnetic domains are dilute in the beam spot and the coherent diffraction pattern modulating the antiferromagnetic peak is greatly simplified. We demonstrate that it is possible to extract the arrangements and sizes of these domains from single diffraction patterns and show that the approach could be extended to a time-structured light source to study the motion of dilute domains or the motion of topological defects in an antiferromagnetic spin texture.
36 MATERIALS SCIENCE↗
Spin transport and spin torque in antiferromagnetic devices
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Evidence for spin swapping in an antiferromagnet
Antiferromagnetic insulators offer strategic advantages in spintronic applications because of their negligible stray fields and ultrafast magnetic dynamics. Control of their magnetization and readout of their magnetic state are essential for these applications but remain challenging. In this work, we report the electrical detection of room-temperature magnetization switching in the canted antiferromagnetic insulator LaFeO 3 , capped with a Pt or W overlayer. The observation of a large magneto-thermovoltage with an in-plane temperature gradient suggests that the mechanism is the swapping of spin currents in the antiferromagnet. This effect provides a sensitive electrical probe of the tiny net magnetization in the insulator, which can be manipulated by a magnetic field on the order of 10 mT. Our results highlight a new material class of insulating canted antiferromagnets for spintronics and spin caloritronics and suggests a method for the electrical readout of magnetic signals in an antiferromagnetic insulator. Electrical readout of the state of an antiferromagnet is an important goal for spintronic applications. Now, detection of the electrical voltage created by a thermal gradient in a canted antiferromagnet suggests a route for achieving this goal.
42 ENGINEERING↗
Magnetic Imaging of Domain Walls in the Antiferromagnetic Topological Insulator MnBi 2 Te 4
The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi 2 Te 4 family, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependence. Here, the direct visualization of these domain walls and domain structures in the magnetic field will not only facilitate the exploration of intrinsic topological phenomena in antiferromagnetic topological insulators but will also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Electrical Switching and Imaging of Antiferromagnetic Spins in Perovskite Epitaxial Thin Films
Electrical control of antiferromagnets is essential for the field of antiferromagnetic spintronics that promises ultrafast speed and terahertz dynamics. However, the large family of complex oxide antiferromagnets such as perovskites have been largely unexplored. Here, we demonstrate electrical switching and detection of Néel vector in LaFeO 3 epitaxial thin films with an epitaxy-enabled biaxial anisotropy, of which the switching behavior is understood by comparing to magnetic field controlled spin Hall magnetoresistance measurements. The electrical switching is corroborated by imaging of antiferromagnetic domains using X-ray Magnetic Linear Dichroism Photoemission Electron Microscopy. Electrical switching of 3-nm and 10-nm LaFeO 3 films was achieved over a wide temperature range of 25 to 300 K. This work offers an attractive platform for exploration of antiferromagnetic spintronics and other emerging phenomena such as potential insulating altermagnetism.
36 MATERIALS SCIENCE↗
Block-Type Antiferromagnetism in Single Chain Quasi-One-Dimensional K 3 Fe 2 Se 4
One-dimensional (1D) structures provide a unique platform to study the correlated quantum interactions and phase transitions such as unconventional magnetism and superconducting states. Here, we report that iron chalcogenide K 3 Fe 2 Se 4 exhibits an unusual block-type canted antiferromagnetic (AFM) order with a clear single chain quasi-1D structure, which is structurally different from the two-leg ladder BaFe 2 Se 3 , through both experimental measurements and density matrix renormalization group (DMRG) calculations. The narrow bandgap semiconductor K 3 Fe 2 Se 4 has a quasi-1D edge-shared FeSe4 tetrahedra chain structure and orders antiferromagnetically below 110 K. The magnetic moments couple antiferromagnetically along the quasi-1D chain direction of the 𝑏 axis and form an up-down-down-up (↑−↓−↓−↑)–like spin structure with a commensurate propagation vector 𝒌=(0,0,0), where block-type spin ↑−↑ or ↓−↓ coupling are between the longer Fe-Fe bonds of the quasi-1D chain. DMRG results show that block antiferromagnetic state is stable in K 3 Fe 2 Se 4 and reveal that the block-ordered arrangement of Fe 2.5+ ions spins arise from the competition between ferromagnetic and AFM interaction in the presence of strong electronic correlation. Our research results not only report the discovery of a clear block-type canted antiferromagnetic structure in a real quasi-1D chain material but also provide a theoretical approach to understand the block-type antiferromagnetism in quasi-1D iron chalcogenides.
antiferromagnetism↗
Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design
Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO 3 /La 2/3 Sr 1/3 MnO 3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.
36 MATERIALS SCIENCE↗
Magnonic analog of the Edelstein effect in antiferromagnetic insulators
Here we investigate the nonequilibrium spin polarization due to a temperature gradient in antiferromagnetic insulators, which is the magnonic analog of the inverse spin-galvanic effect of electrons. We derive a linear-response theory of a temperature-gradient-induced spin polarization for collinear and noncollinear antiferromagnets, which comprises both extrinsic and intrinsic contributions. We apply our theory to several noncentrosymmetric antiferromagnetic insulators, i.e., to a one-dimensional antiferromagnetic spin chain, a single layer of kagome noncollinear antiferromagnet, e.g., KFe 3 ( OH ) 6 ( SO 4 ) 2 , and a noncollinear breathing pyrochlore antiferromagnet, e.g., LiGaCr 4 O 8 . The shapes of our numerically evaluated response tensors agree with those implied by the magnetic symmetry. Furthermore, assuming a realistic temperature gradient of 10 K/mm , we find two-dimensional spin densities of up to ~ 10 6 ℏ / cm 2 and three-dimensional bulk spin densities of up to ~ 10 14 ℏ / cm 3 , encouraging an experimental detection
36 MATERIALS SCIENCE↗
Molecular-field-theory fits to magnetic susceptibilities of antiferromagnetic GdCu 2 Si 2 , CuO, LiCrO 2 , and α-CaCr 2 O 4 single crystals below their Néel temperatures
A recently-developed molecular field theory (MFT) has been used to fit single-crystal magnetic susceptibility χ versus temperature T data below the respective antiferromagnetic ordering temperature T N for a variety of collinear and coplanar noncollinear Heisenberg antiferromagnets. The spins in the system are assumed to interact by Heisenberg exchange and to be identical and crystallographically equivalent. The fitting parameters for χ(T ) of collinear antiferromagnets are measurable quantities: the Weiss temperature θ p in the Curie-Weiss law, TN, χ(T N ), and the spin S. For coplanar noncollinear helix and cycloid structures, an additional fitting parameter is the turn angle between layers of ferromagnetically-aligned spins. Here MFT fits to anisotropic χ(T) data from the literature for single crystals of the collinear antiferromagnets GdCu 2 Si 2 and CuO and the noncollinear antiferromagnets LiCrO 2 with a 120° cycloidal structure and α-CaCr 2 O 4 with a 120° helical structure below their respective N´eel temperatures are presented. The MFT fit to the anisotropic χ(T ≤ T N ) data for CuO is poor, whereas the fits to the data for GdCu 2 Si 2 , LiCrO 2 , and α-CaCr 2 O 4 are quite good. The poor fit for CuO is attributed to the influence of strong quantum fluctuations associated with the small Cu spin and the quasi-one-dimensional magnetism that are not taken into account by the MFT. The magnetic contribution to the zero-field heat capacity of the collinear antiferromagnet GdNiGe 3 at T ≤ T N is also fitted by the MFT.
36 MATERIALS SCIENCE↗
Third harmonic characterization of antiferromagnetic heterostructures
Abstract Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of current-driven switching of antiferromagnets. For heavy-metal/ferromagnet systems, harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect and elucidate current-induced switching. However, harmonic measurement of spin-orbit torques has never been verified in antiferromagnetic heterostructures. Here, we report harmonic measurements in Pt/ α -Fe 2 O 3 bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/ α -Fe 2 O 3 emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Magnetoresistive detection of strongly pinned uncompensated magnetization in antiferromagnetic FeMn
Here we observed and studied pinned uncompensated magnetization in an antiferromagnet using magnetoresistance measurements. For this, we developed antiferromagnet-ferromagnet spin valves (AFSVs) that consist of an antiferromagnetic layer and a ferromagnetic one, separated by a nonmagnetic conducting spacer. In an AFSV, the uncompensated magnetization in the antiferromagnet affects scattering of spin-polarized electrons giving rise to giant magnetoresitance (GMR). By measuring angular dependence of AFSVs' resistance, we detected pinned uncompensated magnetization responsible for the exchange bias effect in an antiferromagnet- only exchange bias system Cu/FeMn/Cu. The fact that GMR measured in this system persists up to 110 kOe indicates that the scattering occurs on strongly pinned uncompensated magnetic moments in FeMn. This strong pinning can be explained if this pinned uncompensated magnetization is a thermodynamically stable state and coupled to the antiferromagnetic order parameter. Finally, using the AFSV technique, we confirmed that the two interfaces between FeMn and Cu are magnetically different: The uncompensated magnetization is pinned only at the interface with the bottom Cu layer.
36 MATERIALS SCIENCE↗
Robustness of the biaxial charge density wave reconstructed electron pocket against short-range spatial antiferromagnetic fluctuations
Recent experiments on underdoped high-temperature superconductors have shown that a biaxial charge density wave coexisting with antiferromagnetism is able to account for the hole-doping dependences of the Hall coefficient and the charge density wave ordering vector. Owing to the loss of long-range order over the range of hole dopings where charge density waves are observed, however, antiferromagnetism poses a serious challenge to the viability of Landau quantization and quantum oscillations. In this work, we make the surprising finding that the states along the antiferromagnetic Brillouin zone boundary, which are usually the most heavily broadened by antiferromagnetic fluctuations, become gapped once the biaxial charge density wave forms. This gapping along with the location of the electron pocket produced by Fermi surface reconstruction at a momentum-space point of high symmetry causes the single nodal electron pocket to be largely protected against antiferromagnetic fluctuations in strong magnetic fields, enabling resolved Landau levels and quantum oscillations to remain robust against antiferromagnetic correlation lengths as short as ~10 Å .
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗