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An autozero amplifier may include a window comparator network to monitor an output offset of a differential amplifier. The autozero amplifier may also include an integrator to receive a signal from a latched window comparator network, and send an adjustment signal back to the differential amplifier to reduce an offset of the differential amplifier.
This paper describes the design and performance of a 4-gc parametric amplifier which meets the stringent requirements of a satellite ground station receiver. It consists of two cascaded stages of similar design: the first of these is operated at liquid nitrogen temperature and the second at room temperature. One 23-gc pump source is used for both amplifier stages. The combination of the two amplifier stages provides 38-db over-all gain, 45°K over-all system input noise temperature, 60-mc bandwidth, 0.1-db short-term gain stability and 0.3-db long-term gain stability. A carefully designed cryogenic system maintains the amplifier refrigerated with only infrequent refilling of the dewar, i.e., once every 10 days.
This work presents a new measurement technique, mixed-signal active harmonic load-pull (MSALP) developed by Anterverta-mw in partnership with Maury Microwave, that allows for wide-band ultra-high efficiency amplifiers to be designed using GaN technology. An overview of the theory behind active load-pull is presented and why load-pull is important for high-power device characterization. In addition, an example procedure is presented that outlines a methodology for amplifier design using this measurement system. Lastly, measured results of a 10W GaN amplifier are presented. This work aims to highlight the benefit of using this sophisticated measurement systems for to optimize amplifier design for real radar waveforms that in turn will simplify implementation of space-based radar systems
This work describes the development of a high-power amplifier for use with a remote sensing SAR system. The amplifier is intended to meet the requirements for the Sweep-SAR technique for use in the proposed DESDynI SAR instrument. In order to optimize the amplifier design, active load-pull technique is employed to provide harmonic tuning to provide efficiency improvements. In addition, some of the techniques to overcome the challenges of load-pulling high power devices are presented. The design amplifier was measured to have 49 dBm of output power with 75% PAE, which is suitable to meet the proposed system requirements.
Cutoff-type high gain amplifier coupled by a diode prevents overdriving of operational amplifier. An amplified feedback signal offsets the excess input signal that tends to cause the amplifier to exceed its preset limit. The output is, therfore, held to the set clamp level.
As an alternative to the use of traveling wave tube amplifiers in spacecraft with long life mission requirements, a solid state S band amplifier was developed. A solid state amplifier with an output of 20 W at 2295 MHz, a dc/RF efficiency of 38%, and a gain of 27 dB was developed. The physical and electrical performance of the solid state amplifier are described.
The principle characteristics and use of SHF parametric amplifiers for radiometer input devices are explored. Balanced parametric amplifiers (BPA) are considered as the SHF signal amplifiers allowing production of the amplifier circuit without a special filter to achieve decoupling. Formulas to calculate the basic parameters of a BPA are given. A modulator based on coaxial lines is discussed as the input element of the SHF. Results of laboratory tests of the receiver section and long-term stability studies of the SHF sector are presented.
A noncryogenic, S-band parametric amplifier operating in the 2.2 to 2.3 GHz band and having an average input noise temperature of less than 30 K was built and tested. The parametric amplifier module occupies a volume of less than 1-1/4 cubic feet and weighs less than 60 pounds. The module is designed for use in various NASA ground stations to replace larger, more complex cryogenic units which require considerably more maintenance because of the cryogenic refrigeration system employed. The amplifier can be located up to 15 feet from the power supply unit. Optimum performance was achieved through the use of high-quality unpackaged (chip) varactors in the amplifier design.
A survey of IMPATT diodes and negative resistance amplifiers is presented. The first phase of the amplifier effort is discussed in which a single diode reflection amplifier delivering 0.5 watt at 15 GHz with 10-dB gain over a 1-GHz band was developed. The design of a dominant mode resonant combiner is described along with the characterization of the IMPATT diodes. Results are given on the complete amplifier and on the thermal and graceful failure characteristics of the unit.
A low noise, K sub u-band, parametric amplifier (paramp) was developed. The unit is a spacecraft-qualifiable, prototype, parametric amplifier for eventual application in the shuttle orbiter. The amplifier was required to have a noise temperature of less than 150 K. A noise temperature of less than 120 K at a gain level of 17 db was achieved. A 3-db bandwidth in excess of 350 MHz was attained, while deviation from phase linearity of about + or - 1 degree over 50 MHz was achieved. The paramp operates within specification over an ambient temperature range of -5 C to +50 C. The performance requirements and the operation of the K sub u-band parametric amplifier system are described. The final test results are also given.
The conceptual design of a dual-amplifier constant-temperature hot-wire anemometer is described. This hot-wire anemometer consists of three basic independent modules: a Wheatstone bridge in which the hot wire is one of its arms, an error-correction amplifier, and a voltage-controlled current source. The last two modules constitute the feedback network of this hot-wire anemometer. Thus the output voltage across the wire is a true function of the instantaneous changes in the wire resistance induced by the cooling effect of the flow. The dual-amplifier is capable of reaching relatively high frequency response through adequate selection of its active elements. Suitable gain of the error-correction amplifier and proper choice of the transfer function of the current source has yielded a frequency bandwidth up to 200 kHz.
Circuit uses standard components to overcome common limitation of JFET amplifiers. Low-noise band-pass amplifier employs JFET and operational amplifier. High gain and band-pass characteristics are achieved with suitable choice of resistances and capacitances. Circuit should find use as low-noise amplifier, for example as first stage instrumentation systems.
A (He-3)-Xe gas mixture, excited by the He-3(n,p)H-3 reaction, has been employed to amplify the output of a (He-3)Xe direct nuclear-pumped laser. Lasing occurred at the 2.63 micron line of XeI in the oscillator. The oscillator output was reflected through 180 deg and passed through the amplifier system. Power measurements of the oscillator output and the amplifier output show the laser power to be amplified by a factor of 3 for the (He-3)-Xe system. Amplification by a factor of 5 was obtained for a (He-3)-CO system.
An 8.2-W GaAs FET amplifier with 38.6 + or - 0.5-dB gain over a 17.7-19.1-GHz frequency band has been developed. This amplifier combines the outputs of eight multistage amplifier modules utilizing a radial combiner. This state-of-the art power level has been achieved with AM/PM of less than 2 deg/dB. The third-order intermodulation products at 1-dB gain compression were 20 dBc, and variation in group delay over the frequency band was less than + or - 0.25 ns. Tests show that the amplifier is unconditionally stable and follows the graceful-degradation principle.
This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPATT amplifier not only met or exceeded all the program objectives, but also possesses the ability to operate in the pulse mode, which was not called for in the original contract requirements. The ability to operate in the pulse mode is essential for TDMA (Time Domain Multiple Access) operation. An output power of 20 W was achieved with a 1-dB instantaneous bandwidth of 260 MHz. The amplifier has also been tested in pulse mode with 50% duty for pulse lengths ranging from 200 ns to 2 micro s with 10 ns rise and fall times and no degradation in output power. This pulse mode operation was made possible by the development of a stable 12-diode power combiner/amplifier and a single-diode pulsed driver whose RF output power was switched on and off by having its bias current modulated via a fast-switching current pulse modulator. Essential to the overall amplifier development was the successful development of state-of-the-art silicon double-drift IMPATT diodes capable of reproducible 2.5 W CW output power with 12% dc-to-RF conversion efficiency. Output powers of as high as 2.75 W has been observed. Both the device and circuit design are amenable to low cost production.
The characteristics of a photodissociation iodine-laser amplifier pumped with a solar-simulating radiation were studied. Under long-pulse energy extraction, an energy amplification of about three and an energy storage time of longer than 500 microseconds were observed for a one meter long, 10 mm i.d. amplifier tube. The effects of elevated temperatures resulted in little reduction of the amplifier gain. These results confirm that developing an efficient chain of oscillator-amplifiers for a high-power solar-pumped iodine laser is indeed feasible.
Described are the characterization and testing of a 20 W solid state amplifier operating in the Ka band to be used in low cost experimental ground terminals. The amplifier was developed by the TRW Electronic Systems Group under NASA Contract NAS3-23266 as a proof-of-concept (POC) device in support of the Advanced Communications Technology Satellite (ACTS) program. Additional goals were development of high-power IMPATT devices and circulators, and multistage diode circuits, which are an integral part of the amplifier. The amplifier underwent acceptance testing at the NASA Lewis Research Center, Cleveland, Ohio. Characteristics measured include the output power of 42 dB m, gain of 30 dB, an injection-locking RF bandwidth of 260 MHz, and an overall direct current-to-radiofrequency (dc-to-RF) efficiency of 6.7 percent.
Space based astronomical infrared measurements present stringent performance requirements on the infrared detector arrays and their associated readout circuitry. To evaluate the usefulness of commercial CMOS technology for astronomical readout applications a theoretical and experimental evaluation was performed on source follower and common-source cascode integrating amplifiers. Theoretical analysis indicates that for conditions where the input amplifier integration capacitance is limited by the detectors capacitance the input referred rms noise electrons of each amplifier should be equivalent. For conditions of input gate limited capacitance the source follower should provide lower noise. Measurements of test circuits containing both source follower and common source cascode circuits showed substantially lower input referred noise for the common-source cascode input circuits. Noise measurements yielded 4.8 input referred rms noise electrons for an 8.5 minute integration. The signal and noise gain of the common-source cascode amplifier appears to offer substantial advantages in acheiving predicted noise levels.