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At least 883 records · Page 49

All sources NASA NTRS DOE OSTI

NASA NTRS1979

Epitaxial silicon growth for solar cells

The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

Daiello, R. V.↗

NASA NTRS2024

Making Rocket Fuel from Moon Rocks: Silicon-Liquid Oxygen (SiLOX) as a Hybrid Propellant

The research team at KSC explored the controlled passivation and burning of Lunar soil constituents in an oxygen combustion vessel for use as an in-space resource. Technologies such as carbothermal reduction (CaRD) and molten regolith electrolysis (MRE) are being developed to remove the oxygen for use and leave constituents in an enriched state. This leaves behind reduced compounds that can react with oxygen for heat generation. The team at KSC looked to explore the feasibility of controlling such reactions in a pure oxygen environment for potential technology integrations. Our proof-of-concept demonstrations have given promise to many potential applications for the controlled burning or combustion of nano- and porous silicon for silicon based, Lunar economy applications. The team at KSC was able to control the burn rate and total energy released effectively via pre-treatment of the nano-silicon in a muffle furnace at varying temperatures at one-hour durations. We created a new capability at KSC with the supporting safety documentation and procedural writeup. Our work highlights the need for greater investigation to understand the regenerative properties of the proposed porous silicon discs, and its viability of a thermal and electrical energy source. This work has demonstrated the proof-of-concept that elemental silicon is able to be combusted with gaseous and liquid oxygen in a controlled manner. This report provides such evidence as well as theoretical calculations and assumptions made for technologies that would be useful in Lunar surface operations with in-situ resources. The concepts are based on the assumption that oxygen extraction technologies from Lunar regolith processing will result in enriched silicon that may be adapted for the presented use cases. Additionally, the energy storage concept is able to be adapted for terrestrial use and integrated into already existing infrastructure.

Kenneth Engeling↗

DOE OSTI2018

Evolution of Non-metallic Inclusions and Precipitates in Oriented Silicon Steel

The evolution of inclusions in oriented silicon steel during the manufacturing process was carried out by chemical composition analysis, non-aqueous electrolytic corrosion, and thermodynamic calculation. The morphology, composition, and size of inclusions were analyzed introducing field emission scanning electron microscope. The oxides were mainly formed during the secondary refining, and the nitrides, sulfides, and compounds were formed during the solidification and cooling of steel in the processes of continuous casting and hot rolling.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

Carroll, Malcolm S.↗

DOE OSTI2026

Techno-Economic Comparison of Molten-Salt Electrolysis and Carbothermic Reduction for the Production of Metallurgical-Grade Silicon

Metallurgical-grade silicon (MG-Si) is an important source material for many industrial applications, including the manufacture of alloys, solar photovoltaics, and electronics. The process to refine raw materials into MG-Si is energy-intensive, with the predominant method of submerged-arc furnaces requiring energy consumption of approximately 11–13 kWh/kg Si. Recent research has discussed promising methods for reducing the energy required for the silicon production process, including the use of molten-salt electrolysis (MSE), a technique that offers potential savings in energy consumption without requiring carbon inputs for the process. This paper presents a techno-economic study of a potential industrial-scale MSE plant for MG-Si production to evaluate the trade-offs between capital and operating costs of the system. Capital costs are sourced from recent MG-Si plants and an existing cost model developed for MSE processes that includes the size of the plant and the operating temperature among its inputs. The results show that MSE technology has the potential to be an economically cost-competitive option for MG-Si production if the technology successfully scales to industrial production and matures enough to allow for financing costs similar to that of a comparably sized submerged-arc furnace plant.

14 SOLAR ENERGY↗

NASA NTRS1992

Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

Offord, Bruce W.↗

NASA NTRS1985

Growth of the 889 per cm infrared band in annealed electron-irradiated silicon

Isothermal annealing of electron-irradiated Czochralski silicon has been studied at four different temperatures ranging from 304 to 350 C using infrared spectroscopy. At annealing temperatures above 300 C the irradiation-induced band at 830 per cm, usually attributed to a vacancy-oxygen complex (the A center), disappears and a new band at 889 per cm grows up. Within the experimental accuracy, the activation energy for the growth of this band is found to be identical with the value given by Stavola et al. for 'anomalous' oxygen diffusion in silicon. Also the frequency factors for the two processes are in reasonable agreement. The results show that a vacancy-assisted process may provide an explanation for enhanced motion of oxygen in silicon.

Svensson, B. G.↗

NASA NTRS1993

Using rapid infrared forming to control interfaces in titanium-matrix composites

Control of the fiber-matrix reaction during composite fabrication is commonly achieved by shortening the processing time, coating the reinforcement with relatively inert materials, or adding alloying elements to retard the reaction. To minimize the processing time, a rapid IR forming (RIF) technique for metal-matrix composite fabrication has been developed. Experiments have shown that the RIF technique is a quick, simple, and low-cost process to fabricate titanium-alloy matrix composites reinforced with either silicon carbide or carbon fibers. Due to short processing times (typically on the order of 1-2 minutes in an inert atmosphere for composites with up to eight-ply reinforcements), the interfacial reaction is limited and well controlled. Composites fabricated by this technique have mechanical properties that are comparable to (in several cases, superior to) those made with conventional diffusion-bonding techniques.

Warrier, Sunil G.↗

NASA NTRS1994

Making Porous Luminescent Regions In Silicon Wafers

Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

Fathauer, Robert W.↗

DOE OSTI2021

Thin-Entrance Window Process for Soft X-Ray Sensors

New free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250 eV to 1.5 KeV. Achieving adequately shallow entrance windows is challenging because the high temperature anneal needed to activate the dopant also drives the dopant profile deeper, growing the region that is insensitive to soft x-rays. A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. The microwave anneal technique can activate dopants at low substrate temperature, with minimal dopant diffusion, and can be used to fabricate both n-type and p-type entrance windows. SRP and SIMS measurements were used to verify dopant activation with negligible dopant diffusion. We then applied the microwave anneal process to a planar sensor wafer, using the new process to create the backside diode contact. Electrical test of the resulting sensors shows good reverse bias characteristics. The sensors have been bump-bonded to a read-out ASIC and used successfully to measure an Fe-55 x-ray spectrum. Process and device simulations were performed to characterize the quantum efficiency of the entrance window for soft x-rays. This technique is useful for other sensor applications requiring a shallow entrance window, including detectors for UV photons, low energy ions and low energy electrons.

47 OTHER INSTRUMENTATION↗

NASA NTRS1974

Loss of oxygen, silicon, sulfur, and potassium from the lunar regolith

The processes of formation and maturation of lunar soils lead to enrichments in the heavy stable isotopes of oxygen, silicon, sulfur, and potassium. The isotopic enrichment implies substantial losses of these elements from the moon. Vaporization by micrometeorite impact and by ion sputtering have removed at least 1% of the mass of the regolith. The losses of sulfur and potassium amount to at least 20-30% of their original abundance in the regolith.

Clayton, R. N.↗

NASA NTRS1983

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗

NASA NTRS2017

Design and Fabrication of Electrostatically Actuated Silicon Microshutters Arrays

We have developed a new fabrication process to actuate microshutter arrays (MSA) electrostatically at NASA Goddard Space Flight Center. The microshutters are fabricated on silicon with thin silicon nitride membranes. A pixel size of each microshutter is 100 x 200 micrometers 2. The microshutters rotate 90 degrees on torsion bars. The selected microshutters are actuated, held, and addressed electrostatically by applying voltages on the electrodes the front and back sides of the microshutters. The atomic layer deposition (ALD) of aluminum oxide was used to insulate electrodes on the back side of walls; the insulation can withstand over 100 V. The ALD aluminum oxide is dry etched, and then the microshutters are released in vapor HF.

microshutter arrays↗

NASA NTRS2016

Additive Manufacturing of Silicon Carbide-Based Ceramic Matrix Composites: Technical Challenges and Opportunities

Advanced SiC-based ceramic matrix composites offer significant contributions toward reducing fuel burn and emissions by enabling high overall pressure ratio (OPR) of gas turbine engines and reducing or eliminating cooling air in the hot-section components, such as shrouds, combustor liners, vanes, and blades. Additive manufacturing (AM), which allows high value, custom designed parts layer by layer, has been demonstrated for metals and polymer matrix composites. However, there has been limited activity on additive manufacturing of ceramic matrix composites (CMCs). In this presentation, laminated object manufacturing (LOM), binder jet process, and 3-D printing approaches for developing ceramic composite materials are presented. For the laminated object manufacturing (LOM), fiber prepreg laminates were cut into shape with a laser and stacked to form the desired part followed by high temperature heat treatments. For the binder jet, processing optimization was pursued through silicon carbide powder blending, infiltration with and without SiC nano powder loading, and integration of fibers into the powder bed. Scanning electron microscopy was conducted along with XRD, TGA, and mechanical testing. Various technical challenges and opportunities for additive manufacturing of ceramics and CMCs will be presented.

ceramic matrix composites↗

NASA NTRS1974

Improved toughness of refractory compounds

The concept of grain-boundary-engineering through elimination of the grain-boundary silicate phase in silicon nitride was developed. The process involved removal of the silica from the nitride powder via a thermal treatment coupled with the use of nitride additives to compensate the remaining oxygen. Magnesium and aluminum nitrides are found to be the most effective additive for use as oxygen compensators. Strength decreases at elevated temperatures are not observed in the alumina containing material. The creep rate of a dual additive sialon composition was two orders of magnitude lower at 1400 C than commercial silicon nitride. A cursory analysis of the creep mechanism indicate that grain-boundary sliding is avoided through elimination of the grain-boundary silicate phase.

Wright, T. R.↗

DOE OSTI2024

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV - ) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV - -based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodolumines cence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV - emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV - emitters and that grain boundaries impact SiV - emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

36 MATERIALS SCIENCE↗

NASA NTRS1979

Slicing of Silicon into Sheet Material. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

The use of multiblade slurry sawing to produce silicon wafers from ingots was investigated. The commercially available state of the art process was improved by 20% in terms of area of silicon wafers produced from an ingot. The process was improved 34% on an experimental basis. Economic analyses presented show that further improvements are necessary to approach the desired wafer costs, mostly reduction in expendable materials costs. Tests which indicate that such reduction is possible are included, although demonstration of such reduction was not completed. A new, large capacity saw was designed and tested. Performance comparable with current equipment (in terms of number of wafers/cm) was demonstrated.

Fleming, J. R.↗

NASA NTRS2003

Challenges and Opportunities in Reactive Processing and Applications of Advanced Ceramic Materials

Recently, there has been a great deal of interest in the research, development, and commercialization of innovative synthesis and processing technologies for advanced ceramics and composite materials. Reactive processing approaches have been actively considered due to their robustness, flexibility, and affordability. A wide variety of silicon carbide-based advanced ceramics and composites are currently being fabricated using the processing approaches involving reactive infiltration of liquid and gaseous species into engineered fibrous or microporous carbon performs. The microporous carbon performs have been fabricated using the temperature induced phase separation and pyrolysis of two phase organic (resin-pore former) mixtures and fiber reinforcement of carbon and ceramic particulate bodies. In addition, pyrolyzed native plant cellulose tissues also provide unique carbon templates for manufacturing of non-oxide and oxide ceramics. In spite of great interest in this technology due to their affordability and robustness, there is a lack of scientific basis for process understanding and many technical challenges still remain. The influence of perform properties and other parameters on the resulting microstructure and properties of final material is not well understood. In this presentation, mechanism of silicon-carbon reaction in various systems and the effect of perform microstructure on the mechanical properties of advanced silicon carbide based materials will be discussed. Various examples of applications of reactively processed advanced silicon carbide ceramics and composite materials will be presented.

Singh, Mrityunjay↗