Microstructural changes of proton irradiated Hastelloy-N and in situ micropillar compression testing of one single grain at different local damage levels
Here, in situ micropillar compression was used to study the deformation of proton-irradiated Hastelloy-N at different damage levels. Multiple pillars were prepared from a single domain along the cross-section of 2.5 MeV proton-irradiated Hastelloy-N. Depending on the location of micropillars, the critical resolved shear stress was obtained as a function of local damage levels. Such an approach eliminates the variation of yield stress due to the difference in the Schmid factor. Microstructural characterization showed that irradiation hardening is contributed by complicated defect structures, including (a) dislocation loops with many in corduroy-like alignments, (2) dislocations pile up, and (3) Cottrell atmosphere. Silicon atoms are found to segregate at dislocation lines and loops and form complicated Cottrell cloud patterns. The critical resolved shear stress, $t_{crss}$, and hardening exponents were both extracted as a function of displacements per atom values up to 2.3. There was a 60% increase in $t_{crss}$ at the highest damage level.