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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination

Low-cost solution-based synthesis of metal halide perovskites (MHPs) invariably introduces defects in the system, which could form Shockley-Read-Hall (SRH) electron-hole recombination centers detrimental to solar conversion efficiency. Here, we investigate the nonradiative recombination processes due to native point defects in methylammonium lead halide (MAPbI 3 ) perovskites using ab initio nonadiabatic molecular dynamics within surface-hopping framework. Regardless of whether the defects introduce a shallow or deep band state, we find that charge recombination in MAPbI 3 is not enhanced, contrary to predictions from SRH theory. We demonstrate that this strong tolerance against defects, and hence the breakdown of SRH, arises because the photogenerated carriers are only coupled with low-frequency phonons and electron and hole states overlap weakly. Both factors appreciably decrease the nonadiabatic coupling. We argue that the soft nature of the inorganic lattice with small bulk modulus is key for defect tolerance, and hence, the findings are general to other MHPs.

Science & Technology - Other Topics↗
DOE OSTI2025

Microstructural evolution and hardness changes in ion irradiated nickel-based Haynes 282 superalloy

This study investigated the crucial aspects of thermal and irradiation stability in precipitation hardened Haynes 282 Ni-based superalloy. The Haynes 282 Ni-based alloy was irradiated by 8 MeV Ni 3+ ions to assess its resistance to phase instabilities and mechanical property alterations. The mid-range doses (at a depth of ∼1 µm) were 1 and 10 displacements per atom (dpa) at temperatures of 600°C and 750°C. Nanoindentation tests provided insights into bulk equivalent hardness of the irradiated and pristine regions, while scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDS) were used to examine the microstructural evolution of irradiation-induced defects and γ′ -Ni 3 (Al, Ti) precipitates and defect structure under irradiation. These precipitates, with an average diameter of 29 nm and a number density of 5 x 10 21 /m 3 , acted as robust dispersion strengthening agents with high radiation point defect sink strength. Remarkably, irradiation did not significantly alter the size or number density of the γ′ precipitates, indicating exceptional thermal stability and radiation resistance of these precipitates at the examined conditions. Radiation-induced dislocation loops were observed at 600°C, albeit without a substantial impact on mechanical properties due to the dominance of γ′ precipitates on the overall alloy strength. The superior stability of γ′ precipitates observed in this study contrasts with several previous research findings on Ni-based alloys that reported poor precipitate stability. Plausible reasons for this difference are discussed. Moreover, this work explicitly outlines a physically grounded approach to ensure accurate microstructure-hardness correlations and clarifies the hardening model by addressing common misapplications of superposition in prior studies.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics

The miniaturization and integration of frequency-agile microwave circuits tunable filters, resonators, phase shifters and more with microelectronics offers tantalizing device possibilities, yet requires thin films whose dielectric constant at GHz frequencies can be tuned by applying a quasi-static electric field . Appropriate systems, e.g., BaxSr1 xTiO3, have a paraelectric-to-ferroelectric transition just below ambient temperature, providing high tunability1 . Unfortunately such films suffer significant losses arising from defects. Recognizing that progress is stymied by dielectric loss, we start with a system with exceptionally low loss Srn+1TinO3n+1 phases , where (SrO)2 crystallographic shear , planes provide an alternative to point defect formation for accommodating non-stoichiometry , . Here, we report the experimental realization of a highly tunable ground state arising from the emergence of a local ferroelectric instability in biaxially strained Srn+1TinO3n+1 phases with n 3 at frequencies up to 120 GHz. In contrast to traditional methods of modifying ferroelectrics doping or strain in this rather unique system increasing the separation between the (SrO)2 planes bolsters the local ferroelectric instability. This new control parameter, n, can be exploited to achieve a figure of merit at room temperature that rivals all known tunable microwave dielectrics.

Ferroelectric↗
DOE OSTI2022

Visualization of defect induced in-gap states in monolayer MoS 2

Atomic-scale intrinsic defects play a key role in controlling functional electronic properties of two-dimensional (2D) materials. Here, we present a low-temperature scanning–tunneling microscopy and spectroscopy investigation of a common point-defect in monolayer molybdenum disulfide (MoS 2 ). We employ a sample preparation method in which the film surface is never exposed to air so that the native dangling bonds surrounding the defects in the film are preserved. Molybdenum vacancies are identified by their three characteristic in-gap resonances by combining scanning–tunneling measurements with parallel Green’s function-based theoretical modeling. The relative energy shifts between the various in-gap states allow us to identify a relative charge difference between two of the observed vacancies. The role of the substrate on the band structure of the defective MoS 2 monolayer is unveiled. Our study highlights the effects of the substrate on the in-gap states of common defects found in MoS 2 providing a pathway in designing and optimizing 2D materials for electronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Dynamic defect correlations dominate activated electronic transport in SrTiO 3

Strontium titanate (SrTiO 3 , STO) is a critically important material for the study of emergent electronic phases in complex oxides, as well as for the development of applications based on their heterostructures. Despite the large body of knowledge on STO, there are still many uncertainties regarding the role of defects in the properties of STO, including their influence on ferroelectricity in bulk STO and ferromagnetism in STO-based heterostructures. In this paper, we present a detailed analysis of the decay of persistent photoconductivity in STO single crystals with defect concentrations that are relatively low but significantly affect their electronic properties. The results show that photo-activated electron transport cannot be described by a superposition of the properties due to independent point defects as current models suggest but is, instead, governed by defect complexes that interact through dynamic correlations. In conclusion, these results emphasize the importance of defect correlations for activated electronic transport properties of semiconducting and insulating perovskite oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Defects of perovskite semiconductor CsPbBr3 investigated via photoluminescence and thermally stimulated current spectroscopies

Halide perovskites are essential materials for hard radiation detectors at ambient temperature. To improve detector performance, charge transport must be investigated and optimized. Using photoluminescence (PL) and thermally stimulated current (TSC) spectroscopies, we investigate photogenerated charge carriers in Bridgman-grown CsPbBr3 single crystals to understand the nature of charge transport. PL spectroscopy of these halide perovskites revealed the presence of strong emission bands at the band edge, which were attributed to free or bound excitons. It is shown that a wide broadening of the excitonic linewidth in these halide perovskites arises from strong exciton–phonon coupling, which is substantially dominated by longitudinal optical phonons via Fröhlich interaction. An additional contribution due to the presence of ionized impurities was also observed. Crystals with a detectable sensitivity to high-energy gamma radiation are characterized by a higher intensity and a narrower linewidth of the principal PL peak at 2.326 eV. Defect states beyond 2.214 eV have a negative impact on detector sensitivity to high-energy gamma radiation. TSC spectroscopy reveals an array of trap levels spanning 0.15–0.70 eV, attributed to intrinsic point defects and multiple extrinsic defects involving dopants or impurities. Defects identified included Cs and Br vacancies, as well as Pb interstitials with concentrations in the 1011–1016 cm−3 range. Understanding how the synthesis process impacts the types and concentrations of the defects present is currently under investigation. Elimination or suppression of the defect/trap states should result in halide perovskite materials with longer carrier diffusion lengths and improved detector characteristics.

Physics↗
DOE OSTI2022

Reaction–drift–diffusion models from master equations: application to material defects

We present a general method to produce well-conditioned continuum reaction–drift–diffusion equations directly from master equations on a discrete, periodic state space. We assume the underlying data to be kinetic Monte Carlo models (i.e. continuous-time Markov chains) produced from atomic sampling of point defects in locally periodic environments, such as perfect lattices, ordered surface structures or dislocation cores, possibly under the influence of a slowly varying external field. Our approach also applies to any discrete, periodic Markov chain. Here, the analysis identifies a previously omitted non-equilibrium drift term, present even in the absence of external forces, which can compete in magnitude with the reaction rates, thus being essential to correctly capture the kinetics. To remove fast modes which hinder time integration, we use a generalized Bloch relation to efficiently calculate the eigenspectrum of the master equation. A well conditioned continuum equation then emerges by searching for spectral gaps in the long wavelength limit, using an established kinetic clustering algorithm to define a proper reduced, Markovian state space.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Defect-induced phonon-resonant scattering and its influence on thermal transport of irradiated thorium-dioxide

Thermal transport in proton irradiated thorium-dioxide (ThO 2 ) is investigated. Using a combination of experiments and first-principles computational framework, the role of lattice defects on thermal conductivity is analyzed. A resonant-phonon scattering mechanism beyond the traditionally considered Rayleigh scattering is found to significantly influence low-temperature thermal transport in the presence of irradiation-induced point defects. The existence of localized phonon modes associated with irradiation-induced defects is suggested by the inability of the first-principles based thermal conductivity model—which considers only three-phonon interactions and phonon-defects scattering using the Tamura formalism—to predict the experimental results, unless a resonant scattering mechanism is included. The emergence of additional peaks in the Raman spectra in the proximity of phonon-resonant frequency provides further evidence for the existence of localized modes. Coupled with a microstructure evolution model, this analysis enables more accurate analysis for contrasting the contributions of different phonon scattering mechanisms across all irradiation doses and temperatures.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2018

Improved high temperature radiation damage tolerance in a three-phase ceramic with heterointerfaces

Abstract Radiation damage tolerance for a variety of ceramics at high temperatures depends on the material’s resistance to nucleation and growth of extended defects. Such processes are prevalent in ceramics employed for space, nuclear fission/fusion and nuclear waste environments. This report shows that random heterointerfaces in materials with sub-micron grains can act as highly efficient sinks for point defects compared to grain boundaries in single-phase materials. The concentration of dislocation loops in a radiation damage-prone phase (Al 2 O 3 ) is significantly reduced when Al 2 O 3 is a component of a composite system as opposed to a single-phase system. These results present a novel method for designing exceptionally radiation damage tolerant ceramics at high temperatures with a stable grain size, without requiring extensive interfacial engineering or production of nanocrystalline materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures

The effect of millisecond flash lamp annealing (FLA) on aluminum doped ZnO (AZO) films and their interface with Si have been studied. The AZO films were deposited by magnetron sputtering on Si (100) substrates. The electrical and structural properties of the film and AZO/Si structures were characterized by current–voltage, capacitance–voltage, and deep level transient spectroscopy measurements, X-ray diffraction, and secondary ion mass spectrometry. The resistivity of the AZO film is reduced to a close to state-of-the-art value of 2 × 10{sup −4} Ω cm after FLA for 3 ms with an average energy density of 29 J/cm{sup 2}. In addition, most of the interfacial defects energy levels are simultaneously annealed out, except for one persisting shallow level, tentatively assigned to the vacancy-oxygen complex in Si, which was not affected by FLA. Subsequent to the FLA, the samples were treated in N{sub 2} or forming gas (FG) (N{sub 2}/H{sub 2}, 90/10%{sub mole}) ambient at 200–500 °C. The latter samples maintained the low resistivity achieved after the FLA, but not the former ones. The interfacial defect level persisting after the FLA is removed by the FG treatment, concurrently as another level emerges at ∼0.18 eV below the conduction band. The electrical data of the AZO films are discussed in term of point defects controlling the resistivity, and it is argued that the FLA promotes formation of electrically neutral clusters of Zink vacancies (V{sub Zn}'s) rather than passivating/compensating complexes between the Al donors and V{sub Zn}'s.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Massive all-atom analysis of 2D materials with quantum properties (Final report)

Improvements in microscopy have enabled the acquisition of data at a scale that is difficult to process manually, making automated machine learning approaches to analyzing experimental images essential. In this project, we developed and applied machine learning (ML) workflows for atomic resolution scanning transmission electron microscopy (STEM) images. This development included improving both methodology as well as generating user-friendly codes. We developed machine learning architectures which, after training, automatically identify the location and types of defects throughout a material. We used these data to produce class-averaged images of 2D atomic coordinates with up to 0.3 pm precision, uncovering the structure and oscillations of long-range strain fields around point defects in WSe 2-2x Te 2x . We also resolved a long-standing problem in this field in the training of ML models, a lack of labeled experimental data, by developing a cycle-GAN that transformed simulated-generated labeled data into labeled data indistinguishable from experiment and therefore suitable for training. This removed the remaining parts of the ML data processing workflow where human intervention was still critical and therefore a bottleneck to working at scale. Codes have been developed and released for this full machine learning workflow. ML approaches to partially automate STEM acquisition were also developed. Finally we applied ML and other advanced data processing methods to several materials science problems in two-dimensional materials, including studying the evolution of hyperuniformity with defect concentration in WSe2, understanding phase transformations in transition metal dichalcogenides during in-situ heating in the STEM, and exploring how 2D interfaces transform from twisted into aligned structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Observation of a topological insulator Dirac cone reshaped by non-magnetic impurity resonance

The massless Dirac electrons found at topological insulator surfaces are thought to be influenced very little by weak, non-magnetic disorder. However, a resonance effect of strongly perturbing non-magnetic impurities has been theoretically predicted to change the dispersion and physical nature of low-energy quasiparticles, resulting in unique particle-like states that lack microscopic translational symmetry. Here we report the direct observation of impurities reshaping the surface Dirac cone of the model three-dimensional topological insulator bismuth selenide. A pronounced kink-like dispersion feature is observed in disorder-enriched samples, and found to be closely associated with the anomaly caused by impurity resonance in the surface state density of states, as observed by dichroic angle-resolved photoemission spectroscopy. The experimental observation of these features, which closely resemble theoretical predictions, has significant implications for the properties of topological Dirac cones in applied scenarios that commonly feature point-defect disorder at surfaces or interfaces. Topological insulators - influence of surface impurities: The electronic properties of topological insulators are robust against perturbations, including the presence of non-magnetic impurities. However, surface impurities can give rise to resonant states near the Dirac point, and if their density becomes sufficiently high it is predicted that they can substantially modify the dispersion of the Dirac cone and develop a collective behaviour that results in the formation of particle-like states that lack microscopic translational symmetry. L. Andrew Wray at Purdue University and at the New York University Shanghai, and colleagues, used angle-resolved photoemission spectroscopy to experimentally observe the reshaping of the surface Dirac cone in a defect-rich sample of the topological insulator Bi 2 Se 3 . These results indicate that surface impurities can provide a useful handle to control the properties of topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Cluster dynamics simulation of uranium self-diffusion during irradiation in UO 2

While fission fragments pass through UO 2 nuclear fuel, a considerable concentration of Frenkel pair defects (i.e. vacancies and interstitials) are created. The steady-state concentration of these defects leads to enhanced uranium self-diffusion, one of several fundamental kinetic parameters that control key engineering properties such as creep and fission gas swelling in UO 2 nuclear fuel. A cluster dynamics method to track point defects and defect clusters has been implemented in the MARMOT phase-field code in order to predict as-measured out-of-pile and irradiation enhanced thermal diffusivity. Here, the calculated uranium self-diffusion coefficient compares well with non-irradiated fuel measurements, and shows similar trends to those observed in irradiated fuel, which is a good result given the complexities introduced by non-stoichiometric compositions.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2017

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN [Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial n-GaN]

Here, inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality, low defect density GaN devices, but fundamental studies of carrier transport and radiation hardness in such devices are lacking. Here, we report measurements of the hole diffusion length in low threading dislocation density (TDD), homoepitaxial n-GaN, and high TDD heteroepitaxial n-GaN Schottky diodes before and after irradiation with 2.5 MeV protons at fluences of 4–6 × 10 13 protons/cm 2 . We also characterize the specimens before and after irradiation using electron beam-induced-current (EBIC) imaging, cathodoluminescence, deep level optical spectroscopy (DLOS), steady-state photocapacitance, and lighted capacitance-voltage (LCV) techniques. We observe a substantial reduction in the hole diffusion length following irradiation (50%–55%) and the introduction of electrically active defects which could be attributed to gallium vacancies and associated complexes (V Ga -related), carbon impurities (C-related), and gallium interstitials (Ga i ). EBIC imaging suggests long-range migration and clustering of radiation-induced point defects over distances of ~500 nm, which suggests mobile Ga i . Following irradiation, DLOS and LCV reveal the introduction of a prominent optical energy level at 1.9 eV below the conduction band edge, consistent with the introduction of Ga i .

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Primary defect production from molecular dynamics simulations of high-energy displacement cascades in NbMoTaW alloys

In this work, we report on large-scale molecular-dynamics (MD) simulations of displacement cascades in equiatomic NbMoTaW alloys at PKA energies ranging from 0.15 to 150 keV. We find defect production to be strongly dependent on recoil energy, scaling sublinearly up to 10 keV, and linearly thereafter. We find the sublinear regime to be defined by low values of surviving Frenkel pairs, typically found as isolated point defects or small defect clusters, while at higher recoil energies dense cascades become more frequent, leading to splitting into subcascades and the production of relatively large prismatic-dislocation loops with ⟨111⟩ and ⟨001⟩ Burgers vectors. These loops immobilize large fractions of defects, leading to a rapid growth of the number of surviving defects in the linear regime. We also anneal post-cascade defect configurations using object-kinetic Monte Carlo (OKMC) simulations to account for intracascade recombination on time scales not accessible to MD simulations. Cascade annealing is strongly temperature dependent, with the OKMC simulations only showing significant recovery at 1000 K but not below. Our results are in general agreement with existing published data for refractory concentrated alloys.

Zhou, Xinran [Lawrence Berkeley National Laborator↗
DOE OSTI2018

Beyond thermodynamic defect models: A kinetic simulation of arsenic activation in CdTe

To overcome the limitations of thermodynamic defect models, we introduce a multilevel kinetic approach to simulate the activation of p doping in CdTe by group V elements using arsenic as a “model” dopant. On the lowest level, we calculate thermodynamic and kinetic parameters of point defects, complexes, and reactions from first principles. On the intermediate level, we use these parameters to calculate the kinetic rates of defect reactions. Finally, we simulate the time evolution of defects and free carriers. Our results show the importance of kinetic factors in defect chemistry models. We reveal the primary arsenic activation pathway to be a fast reaction in which the tellurium atoms get kicked out and replaced on the regular anion sites by interstitial arsenic species. We discover the important role of (As i As Te ) and (As i As i ) complexes that arise during activation anneal to form kinetically stabilized transient states that not only compensate the doping but also can produce deep recombination levels. Lastly, we expect that our modeling approach and the gained insight into the atomic processes behind the doping formation will advance the defect chemistry modeling of electronic properties of materials.

14 SOLAR ENERGY↗
DOE OSTI2019

Comprehensive Computational Study of Partial Lead Substitution in Methylammonium Lead Bromide

Impurities in semiconductors, for example, lead-based hybrid perovskites, have a major influence on their performance as photovoltaic (PV) light absorbers. While impurities could create harmful trap states that lead to nonradiative recombination of charge carriers and adversely affect PV efficiency, they could also potentially increase absorption via midgap energy levels that act as stepping stones for subgap photons or introduce charge carriers via doping. To unearth trends in impurity energy states, we use first principles density functional theory calculations to extensively study partial substitution of Pb in methylammonium lead bromide (MAPbBr 3 ), a representative lead-halide perovskite. Investigation of the density of states and energy levels related to the transition of the substitutional defect from one charge state to another reveals that several elements create midgap energy states in MAPbBr 3 . We machine learned trends and design rules from the computational data and discovered that a few easily computed properties of the bromide compounds of any element can be used to predict the energetics and energy levels of the substitutional defect related to that element. The calculated Fermi level-dependent defect formation energies lead to the observation that substitution by transition metals, Zr, Hf, Nb, and Sc, and group V element Sb can shift the equilibrium Fermi level and change the perovskite conductivity, as determined by the dominant intrinsic point defects. Finally, metal-substituted MAPbBr 3 compounds of Bi, Sc, Ni, and Zr were experimentally investigated, and while there was an improvement in the thin-film morphology and an enhancement in charge carrier lifetimes, no clear evidence of subgap absorption features owing to the substituent being incorporated in the MAPbBr 3 lattice could be seen.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Understanding and reducing deleterious defects in the metastable alloy GaAsBi

Technological applications of novel metastable materials are frequently inhibited by abundant defects residing in these materials. Using first-principles methods, we investigate the defect thermodynamics and phase segregation in the technologically important metastable alloy GaAsBi. Our calculations predict defect energy levels in good agreement with those from numerous previous experiments and clarify the defect structures giving rise to these levels. We find that vacancies in some charge states become metastable or unstable with respect to antisite formation, and this instability is a general characteristic of zincblende semiconductors with small ionicity. The dominant point defects that degrade the electronic and optical performances are predicted to be As Ga , Bi Ga , As Ga +Bi As , Bi Ga +Bi As , V Ga and V Ga +Bi As , of which the first four and last two defects are minority-electron and minority-hole traps, respectively. V Ga is also observed to have a critical role in controlling metastable Bi supersaturation by mediating Bi diffusion and clustering. To reduce the influences of these deleterious defects, we suggest shifting the growth away from an As-rich condition and/or using hydrogen passivation to reduce the minority-carrier traps. In conclusion, we expect this work to aid in the applications of GaAsBi for novel electronic and optoelectronic devices and to illuminate the control of deleterious defects in other metastable materials.

36 MATERIALS SCIENCE↗