Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Solid State Lighting”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Evolution of sputtered tungsten coatings at high temperature

Sputtered tungsten (W) coatings were investigated as potential high temperature nanophotonic material to replace bulk refractory metal substrates. Of particular interest are materials and coatings for thermophotovoltaic high-temperature energy conversion applications. For such applications, high reflectance of the substrate in the infrared wavelength range is critical in order to reduce losses due to waste heat. Therefore, the reflectance of the sputtered W coatings was characterized and compared at different temperatures. In addition, the microstructural evolution of sputtered W coatings (1 and 5 μm thick) was investigated as a function of anneal temperature from room temperature to 1000 °C. Using in situ x-ray diffraction analysis, the microstrain in the two samples was quantified, ranging from 0.33% to 0.18% for the 1 μm sample and 0.26% to 0.20% for the 5 μm sample, decreasing as the temperature increased. The grain growth could not be as clearly quantified due to the dominating presence of microstrain in both samples but was in the order of 20 to 80 nm for the 1 μm sample and 50 to 100 nm for the 5 μm sample, as deposited. Finally, the 5 μm thick layer was found to be rougher than the 1 μm thick layer, with a lower reflectance at all wavelengths. However, after annealing the 5 μm sample at 900 °C for 1 h, its reflectance exceeded that of the 1 μm sample and approached that of bulk W found in literature. Overall, the results of this study suggest that thick coatings are a promising alternative to bulk substrates as a low cost, easily integrated platform for nanostructured devices for high-temperature applications, if the problem of delamination at high temperature can be overcome.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Lattice distortion in single crystal rare-earth arsenide/GaAs nanocomposites

Epitaxial single crystal nanocomposites comprised of rare-earth arsenide nanoparticles embedded in GaAs (001) layers produce a larger change in lattice parameter than expected from the lattice parameters of relaxed films. Despite similar cubic structures and lattice parameters, elongation of the interfacial bond length between the two materials induces additional strain causing an expansion in the nanocomposite lattice. The interface bond length is material dependent with an average atomic layer spacing at the ErAs:GaAs interface of 1.9 Å while the spacing at the ScAs:GaAs interface is only 1.4 Å. Implications for lattice matching various single crystal epitaxial nanostructures in semiconductors are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well

Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k∙p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.

bio-inspired↗
DOE OSTI2014

Energy harvesting of non-emissive triplet excitons in tetracene by emissive PbS nanocrystals

Triplet excitons are ubiquitous in organic optoelectronics, but they are often an undesirable energy sink because they are spin-forbidden from emitting light and their high binding energy hinders the generation of free electron–hole pairs. Harvesting their energy is consequently an important technological challenge. Here, we demonstrate direct excitonic energy transfer from ‘dark’ triplets in the organic semiconductor tetracene to colloidal PbS nanocrystals, thereby successfully harnessing molecular triplet excitons in the near infrared. Steady-state excitation spectra, supported by transient photoluminescence studies, demonstrate that the transfer efficiency is at least (90 ± 13)%. The mechanism is a Dexter hopping process consisting of the simultaneous exchange of two electrons. Triplet exciton transfer to nanocrystals is expected to be broadly applicable in solar and near-infrared light-emitting applications, where effective molecular phosphors are lacking at present. In particular, this route to ‘brighten’ low-energy molecular triplet excitons may permit singlet exciton fission sensitization of conventional silicon solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Recombination in polymer-fullerene bulk heterojunction solar cells

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (J sc ) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature-dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first-order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The “missing 0.3 V” inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open-circuit voltage at room-temperature results from the temperature dependence of the quasi-Fermi levels in the polymer and fullerene domains—a conclusion based on the fundamental statistics of fermions.

14 SOLAR ENERGY↗
DOE OSTI2015

Studies on Thermoelectric Properties of n-type Polycrystalline SnSe 1- x S x by Iodine Doping

Iodine-doped n-type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n-type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 1017 cm-3 (p-type) to 5.0 × 1015 cm-3 (n-type) then to 2.0 × 1017 cm-3 (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p-type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Spawning rings of exceptional points out of Dirac cones

The Dirac cone underlies many unique electronic properties of graphene and topological insulators, and its band structure—two conical bands touching at a single point—has also been realized for photons in waveguide arrays, atoms in optical lattices, and through accidental degeneracy. Deformation of the Dirac cone often reveals intriguing properties; an example is the quantum Hall effect, where a constant magnetic field breaks the Dirac cone into isolated Landau levels. A seemingly unrelated phenomenon is the exceptional point, also known as the parity–time symmetry breaking point, where two resonances coincide in both their positions and widths. Exceptional points lead to counter-intuitive phenomena such as loss-induced transparency, unidirectional transmission or reflection, and lasers with reversed pump dependence or single-mode operation. Dirac cones and exceptional points are connected: it was theoretically suggested that certain non-Hermitian perturbations can deform a Dirac cone and spawn a ring of exceptional points. Here we experimentally demonstrate such an ‘exceptional ring’ in a photonic crystal slab. Angle-resolved reflection measurements of the photonic crystal slab reveal that the peaks of reflectivity follow the conical band structure of a Dirac cone resulting from accidental degeneracy, whereas the complex eigenvalues of the system are deformed into a two-dimensional flat band enclosed by an exceptional ring. This deformation arises from the dissimilar radiation rates of dipole and quadrupole resonances, which play a role analogous to the loss and gain in parity–time symmetric systems. In this study, our results indicate that the radiation existing in any open system can fundamentally alter its physical properties in ways previously expected only in the presence of material loss and gain.

14 SOLAR ENERGY↗
DOE OSTI2014

Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9 W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

DROPWISE CONDENSATION ON MICRO- AND NANOSTRUCTURED SURFACES

In this review we cover recent developments in the area of surface-enhanced dropwise condensation against the background of earlier work. The development of fabrication techniques to create surface structures at the micro-and nanoscale using both bottom-up and top-down approaches has led to increased study of complex interfacial phenomena. In the heat transfer community, researchers have been extensively exploring the use of advanced surface structuring techniques to enhance phase-change heat transfer processes. In particular, the field of vapor-to-liquid condensation and especially that of water condensation has experienced a renaissance due to the promise of further optimizing this process at the micro-and nanoscale by exploiting advances in surface engineering developed over the last several decades.

Enright, R↗
DOE OSTI2012

Stronger phonon scattering by larger differences in atomic mass and size in p-type half-Heuslers Hf 1-x Ti x CoSb 0.8 Sn 0.2

We report that high lattice thermal conductivity has been the bottleneck for further improvement of the thermoelectric figure-of-merit (ZT) of half-Heuslers (HHs) Hf 1-x Zr x CoSb 0.8 Sn 0.2 . Theoretically, the lattice thermal conductivity can be reduced by exploring larger differences in the atomic mass and size in the crystal structure, leading to higher ZT. In this paper, we experimentally demonstrated that a lower thermal conductivity in p-type half-Heuslers can be achieved when Ti is used to replace Zr, i.e., Hf 1-x Ti x CoSb 0.8 Sn 0.2 , due to larger differences in the atomic mass and size between Hf and Ti compared with Hf and Zr. Finally, the highest ZT peak, ~1.0 at 800 °C, in the Hf 1-x Ti x CoSb 0.8 Sn 0.2 (x = 0.1, 0.2, 0.3, and 0.5) system was achieved using Hf 0.8 Ti 0.2 CoSb 0.8 Sn 0.2 , which makes this material useful in power generation applications.

36 MATERIALS SCIENCE↗