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Method, called flux method, improvement over conventional methods, easy to use, and applies in operating regime not accessible to conventional macroscopic methods. Key concept of flux method follows behavior of particle flux rather than concentration of particles. Method not subject to limitations that follow from local or infinitesimal analysis.
Report presents results of continuing program aimed at characterizing mercury/cadmium/tellurium alloys and eventually developing improved methods of preparing alloys for use as infrared sensors. Work covered by report includes series of differential thermal analysis (DTA) measurements of alloy compositions with x varied from 9 to 1 in 0.1 increments.
The photocurrents of the substituted anthracenes, 1,5-diacetylanthracene (2), 1-acetylanthracene (3), 9-acetylanthracene (4), 1,5-dichloroanthracene (5), 1,5-diethylanthracene (6), 1,5-dimethoxyanthracene (7), 9-cyanoanthracene (8), and anthracene (1) were measured by using their surface type cells in nitrogen. The compounds of (1), (5), (6), (7), and (8) showed the photocurrent spectra which corresponded to the absorption spectra of their evaporated films. In the cases of (2) and (3), however, the anomalous photocurrent appeared in the threshold region of their absorption spectra. The appearance of the anomalous photocurrent was characteristic of anthracenes having the acetyl group at 1- and/or 5-position. The magnitude of the photocurrents of the 1,5-disubstituted anthracenes was similar to that of (1). The photocurrents of the monosubstituted anthracenes were smaller than that of (1). Among the monosubstituted anthracenes, the compound (4) showed no photocurrent under the same conditions. Contrary to the results obtained in the cases of phenazines, the photoconductivities of the anthracene derivatives became better in air.
Test data of switching times characterization of bipolar transistors, of field effect transistor's switching times on-resistance and characterization, comparative data of field effect transistors, and test data of field effect transistor's parallel operation characterization are given. Data is given in the form of graphs.
Lead-tin-telluride has been grown in a thermally stable mode (solutally unstable) and in a solutally stable (thermally unstable) mode in a Bridgman configuration. Significant differences in the crystal morphology and the compositional homogeneity have been found between the two configurations. In addition, for the solutally stable configuration, evidence has been found that the flow characteristics in the melt change drastically during the course of the run.
Infrared tunable diode lasers were developed in the 1960s and have been a valuable radiation source for high resolution laboratory and in situ spectroscopy. Use of Pb-salt Tunable Diode Lasers (TDL) in heterodyne applications impose stringent requirements on the TDL not normally required for laboratory spectroscopy. A review will be made of progress associated with TDLs in such heterodyne applications. Areas addressed will include such items as lifetime, operating temperature, and factors affecting excess noise. The review will emphasize the experience at Langley Research Center, but will include material from other users. The Langley information will include a description and current status of the Laser Heterodyne Spectrometer experiment and atmospheric solar absorption data obtained from a groundbased heterodyne system.
The present effort is part of a continuing research program directed towards the investigation of basic vapor transport phenomena and of crystal growth properties of electronic materials. The primary purpose of ground-based studies is the development and definition of optimum experimental parameters for flight experiments. The ground-based effort includes the investigation of gravity-driven convection effects on mass transport rates and on crystal morphology for different orientations of the density gradient with respect to the gravity vector, and as a function of pressure and of temperature. In addition to the experimental tasks, theoretical efforts involve the quantitative thermodynamic analysis of the systems under investigation, the computation of fluid dynamic parameters, and the consideration of other possible effects on fluid flow under vertical, stabilizing and microgravity conditions. The specific experiments to be performed in a microgravity environment include the investigation of vapor transport and crystal growth phenomena of the GeSe-Xenon system and of the mass flux and growth of bulk and layer-type crystals of Hg sub (1-x) Cd sub x Te using HgI as a transport agent.
Two novel types of superlattice photodetectors were studied. The first was a superlattice photomultiplier and the second a photodetector based on the real space transfer mechanism. A summary of the results is presented.
The success of efficiently calculating the temperature field, crystal radius, melt mensicus, and melt/solid interface in the Czochralski crystal growth system by full finite-element solution of the government thermal-capillary model is demonstrated. The model predicts realistic response to changes in pull rate, melt volume, and the thermal field. The experimentally observed phenomena of interface flipping, bumping, and the difficulty maintaining steady-state growth as the melt depth decreases are explained by model results. These calculations will form the basis for the first quantitative picture of Cz crystal growth. The accurate depiction of the melt meniscus is important in calculating the crystal radius and solidification interface. The sensitivity of the results to the equilibrium growth angle place doubt on less sophisticated attempts to model the process without inclusion of the meniscus. Quantitative comparison with experiments should be possible once more representation of the radiation and view factors in the thermal system and the crucible are included. Extensions of the model in these directions are underway.
The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conductions, rendering one power electrode of the bipolar transistor open. Means are provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.
A macrocrystalline or single crystal semiconductive material is formed from a primary substrate including a single crystal or several very large crystals of a relatively low melting material. This primary substrate is deposited on a base such as steel or ceramic, and it may be formed from such metals as zinc, cadmium, germanium, aluminum, tin, lead, copper, brass, magnesium silicide, or magnesium stannide. These materials generally have a melting point below about 1000 C and form on the base crystals the size of fingernails or greater. The primary substrate has an epitaxial relationship with a subsequently applied layer of material, and because of this epitaxial relationship, the material deposited on the primary substrate will have essentially the same crystal size as the crystals in the primary substrate. If required, successive layers are formed, each of a material which has an epitaxial relationship with the previously deposited layer, until a layer is formed which has an epitaxial relationship with the semiconductive material. This layer is referred to as the epitaxial substrate, and its crystals serve as sites for the growth of large crystals of semiconductive material. The primary substrate is passivated to remove or otherwise convert it into a stable or nonreactive state prior to deposition of the seconductive material.
Preparatory work on Bridgman directional solidification (BDS) of PbSnTe crystals prior to microgravity crystal growth experiments on Shuttle flights are reported. Gravitational effects become important in crystal growth when density gradients are present. The situation is critical in BDS of PbSnTe because of the necessity of obtaining homogeneous compositional distributions, which can be disturbed when convective processes occur. Numerical models have been defined which quantify the effects of convection in the crystal growth solution. The models were verified by earth-based crystal-growth tests in a two-zone furnace using equal concentrations of each of the elements. Data are provided to demonstrate the differences in composition among crystals grown at different orientations to the gravitational field vector.
A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.
A method is described of determining an equivalent circuit for solar cells which have degraded as a result of the formation of a rectifying Schottky barrier at the back contact. An excellent fit of experimental data has been achieved using SCEPTRE with an equivalent circuit derived from the shape of the measured current voltage characteristics. One key parameter of the Schottky barrier diode, the reverse saturation current, can be used to determine the barrier potential. The barrier potential increases as the cell is stressed with 0.5 volts being a typical experimentally determined value for a degraded cell.
A fiber-optic thermometer is described which uses a thick-film SiC sensing etalon. The etalon's temperature-dependent phase shift is determined by analyzing its spectral reflectance, using an LED and a tunable Michelson interferometer. Temperatures from 20 to 1000 C are measured with better than 0.5 deg C resolution.
Preliminary experimental results are reported for a diode-pumped Nd:YAG laser employing a tightly focused end-pump geometry. The resonator configuration is planoconcave, with the pumped end of the Nd:YAG rod being coated for high reflection at 1.06 microns. This geometry rectifies nearly all the inefficiencies plaguing side-pumped schemes. This laser is further considered as a candidate for optical communication over the deep space channel.
Comparisons are made between theoretical and experimental data on laser Raman scattering by phonons and two-magnons in antiferromagnetic and paramagnetic phases of MnTe. The study was performed specifically to characterize the magnetic exchange coupling constants of the Mn ions in the samples. Crystal MnTe samples were bombarded with an Ar ion laser beam to obtain spectrometer and photon counter data. One E(2g) phonon with a room temperature energy of 178/cm and a two-magnon peak of 360/cm were observed in the Raman spectrum. A spin wave dispersion relation is presented for the spectrum. Finally, a Monte Carlo technique was used to calculate the two-magnon joint density of states that best fits the experimental data.
A method for analyzing arbitrary one-dimensional waveguides is described and applied to find the lateral modes of gain-guided laser arrays directly, without the need for a coupled-mode approximation. Detailed results are given for a four-element array for which experimental results are available, and the effect of varying device parameters on the relative gains of the modes is considered. The results show differences between gain-guided and real-index guided arrays which are not evident in prior analyses.