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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Study of beryllium and beryllium-lithium complexes in single-crystal silicon.

When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-meV level is due to a more complex beryllium configuration than the 191-meV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two new acceptor levels at 106 and 81 meV. Quenching and annealing studies indicate that these new levels are due to lithium forming a complex with the defects responsible for the 191- and 145-meV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-meV beryllium-lithium level is split into two levels, presumably by internal strains. Tentative models are proposed to explain these results.

Crouch, R. K.↗
NASA NTRS1972

Silicon solar cell efficiency - Practice and promise.

The maximum efficiency of silicon solar cells is calculated and yields a value near 18%. Additionally, the performance of these high efficiency cells in a synchronous orbit radiation field is calculated and indicates that these cells would be superior to present silicon cells at all times. The performance of conventional cells is analyzed and several areas in which performance gains may be achieved are discussed. These areas include improvements in diffused region profile, in reduction of excess forward currents in cells made from low resistivity material and in the theory for describing complex solar cell structures.

Brandhorst, H. W., Jr.↗
NASA NTRS1973

Silicon switching transistor with high power and low saturation voltage

Assembly of two individually encapsulated silicon-chip transistors produces silicon power-transistor that has low electrical resistance and low thermal impedance. Electrical resistance and thermal impedance are low because of short lead lengths, and external contact surfaces are plated to reduce resistance at interfaces.

Stonebraker, E.↗
NASA NTRS1974

Silicon on sapphire for ion implantation studies

Van der Pauw or bridge samples are ultrasonically cut from silicon on sapphire wafers. Contact pad regions are implanted with moderately heavy dose of ions. Ion of interest is implanted into sample; and, before being annealed in vacuum, sample is sealed with sputtered layer of silicon dioxide. Nickel or aluminum is sputtered onto contact pad areas and is sintered in nitrogen atmosphere.

Pisciotta, B. P.↗
NASA NTRS1972

A study of beryllium and beryllium-lithium complexes in single crystal silicon

When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 MeV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-MeV level is due to a more complex beryllium configuration than the 191-MeV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two acceptor levels at 106 MeV and 81 MeV. Quenching and annealing studies indicate that these levels are due to lithium forming a complex with the defects responsible for the 191-MeV and 145-MeV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-MeV beryllium level is split into two levels, presumably by internal strains. Tentative models are proposed.

Crouch, R. K.↗
NASA NTRS1972

Development of high temperature, high radiation resistant silicon semiconductors

The development of a hardened silicon power transistor for operation in severe nuclear radiation environments at high temperature was studied. Device hardness and diffusion techniques are discussed along with the geometries of hardened power transistor chips. Engineering drawings of 100 amp and 5 amp silicon devices are included.

Whorl, C. A.↗
NASA NTRS1973

Effects of electron irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

One OHM-cm and 10 OHM-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed flux of 10 to the 11th power e/sq cm/sec and fluences of 10 to the 13th power, 10 to the 14th power and 10 to the 15th power e/sq.cm. 1-V curves of the cells were made at room temperature, - 63 C and + or - 143 C after each irradiation. A value of 139.5 mw/sq cm was used as AMO incident energy rate per unit area. The 10 OHM-cm cells appear more efficient than 1 OHM-cm cells after exposure to a fluence greater than 10 to the 14th power e/sq cm. The 1.0 MeV electron damage coefficients for both 1 OHM-cm and 10 OHM-cm cells are somewhat less than those for previously irradiated cells at room temperature. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously.

Nicoletta, C. A.↗
NASA NTRS1973

Development of high temperature silicone adhesive formulations for thermal protection system applications

Trade-off studies and screening evaluations were made of commercial polymers and silicone foam sheet stock. A low modulus, low density 0.26 gm/cc modification was developed of the GE-RESD PD-200 system based upon GE RTV-560 silicone polymer. The bond system modification was initially characterized for mechanical and thermal properties, evaluated for application methods, and its capability demonstrated as a strain arrestor bond system.

Hockridge, R. R.↗
NASA NTRS1972

Radiation sensitivity of silicon imaging sensors on missions to the outer planets.

Review of the results of an investigation of the magnitude of the degradation effects of radiation on the operating characteristics of camera tubes using silicon diode arrays in the space environment, and discussion of the radiation damage mechanisms concerned. The effects produced by bombardment of bare-silicon-diode arrays or vidicon tubes with 85-kV X rays, Cobalt 60 gamma rays, 1 MeV and 11 MeV electrons, 3 MeV and 142 MeV protons, and reactor neutrons are presented. Interference effects produced by radiation bombardment during operation of television tubes are investigated, and limiting fluxes of electrons and protons are given.

Brucker, G. J.↗
NASA NTRS1973

Fine structure in the optical-absorption edge of silicon.

Investigation of the dependence of the photocurrent generated in silicon p-n junctions on the energy of the incident photons to obtain details concerning the fine structure in the indirect optical-absorption edge of silicon. It is found that at room temperature there are three prominent thresholds in the absorption tail. The first, which is not too well defined, occurs at 0.91 eV, the second at 0.99 eV, and the third at 1.026 eV. The dependence of the absorption coefficient on the photon energy following the latter two thresholds is found to differ from that found by Mcfarlane et al. (1958). The threshold energies and temperature dependence of the absorption coefficient suggest that two- and three-phonon processes give rise to the absorption tail. In the transverse-optical phonon-absorption region more structure is found in the absorption coefficient than is accounted for by the theory.

Anagnostopoulos, C.↗
NASA NTRS1973

High temperature material interactions of thermoelectric systems using silicon germanium.

The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

Stapfer, G.↗
NASA NTRS1973

A new electric field effect in silicon solar cells.

The phenomenon of high-resistivity silicon solar cells manifesting high open-circuit voltages previously observed only for cells made from low-resistivity silicon is shown to be caused by the presence of a shallow diffused region at the back surface of the cell. The basic cell structure is either n+, p, p+ or p+, n, n+. The high open-circuit voltage arises from the injection and accumulation of excess majority carriers in the bulk upon illumination or application of forward bias to the structure. A working model for the cell, designated a back surface field (BSF) cell, is described, and recent developments are cited.

Mandelkorn, J.↗
NASA NTRS1974

The effect of grain boundaries on the resistivity of polycrystalline silicon

The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

Fripp, A. L., Jr.↗
NASA NTRS1974

Silicon ions below 100 km: A case for SiO2(+)

Silicon ions are normally detected at altitudes above 100 km and within sporadic E layers. Traces have rarely been observed within the more permanent metallic layer near 93 km. This is surprising since silicon is an important constituent of chondritic meteorites, which ablate material in this region to provide a primary source of the metallic species observed there. Evidence is presented that Si(+)ions form SiO2(+) at the lower altitudes, and exist in this ionic state prior to recombination. A rocket launched from El Arenosillo, Spain on 3 July 1972, at 0743 LMT, during the predicted period of the Beta Taurids meteor shower, passed through a continuous belt of metallic ions that began near 85 km, ended near 115 km, and exhibited an order of magnitude increase in the form of a layer near 114 km. Si(+)was measured in and below the ledge down to 103 km. It showed a rapid decrease below this height. Radiative association is offered as a primary mechanism for SiO2(+) production.

Goldberg, R. A.↗
NASA NTRS1974

Gravitational effects of process-induced dislocations in silicon

Matters pertaining to semiconductor device fabrication were studied in terms of the influence of gravity on the production of dislocations in silicon wafers during thermal cycling in a controlled ambient where no impurities are present and oxidation is minimal. Both n-type and p-type silicon wafers having a diameter of 1.25 in to 1.5 in, with fixed orientation and resistivity values, were used. The surface dislocation densities were measured quantitatively by the Sirtl etch technique. The results show two significant features of the plastic flow phenomenon as it is related to gravitational stress: (1) the density of dislocations generated during a given thermal cycle is directly related to the duration of the cycle; and (2) the duration of the thermal cycle required to produce a given dislocation density is inversely related to the equilibrium temperature. Analysis of the results indicates that gravitational stress is instrumental in process-induced defect generation.

Porter, W. A.↗
NASA NTRS1973

Luminous efficiency measurements for silicon and aluminum simulated micrometeors

Laboratory measurements on simulated silicon and aluminum micrometeors in an air atmosphere have produced values for the elemental photographic luminous efficiencies of silicon over a velocity range 13-48 km/sec and of aluminum over a range 12-42 km/sec. The photographic luminous efficiency of both elements first increases with increasing velocity, then reaches a peak and declines. Supplementary measurements on Si and Al in atmospheres of O2 and N2 support the air results.

Becker, D. G.↗
NASA NTRS1973

Organosilicon compounds. XVIII - Silicon-containing dianhydrides

Description of four new silicon-containing dianhydrides synthetized in an attempt to provide useful silicon-containing polyimide precursors. They were prepared by aqueous potassium permanganate-pyridine oxidations of corresponding tetramethyl intermediates to form tetracarboxylic acids, which were dehydrated to the dianhydrides.

Pratt, J. R.↗