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At least 883 records · Page 49

Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Time dynamics of photoluminescence intensity was studied in InGaAsSb/AlGaAsSb quantum wells with different compositions of the barrier solid solution and with different width of the quantum wells. The time of charge carrier capture in quantum wells, the energy relaxation times, lifetime related to resonant Auger recombination were estimated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electron-ion dissociative recombination rate constants relevant to the Titan atmosphere and the Interstellar Medium

Following the arrival of Cassini at Titan in 2004, the Titan atmosphere has been shown to contain large complex polycyclic-aromatic hydrocarbons. Since Cassini has provided a great deal of data, there exists a need for kinetic rate data to help with modeling this atmosphere. One type of kinetic data needed is electron-ion dissociative recombination (e-IDR) rate constants. These data are not readily available for larger compounds, such as naphthalene, or oxygen containing compounds, such as 1,4 dioxane or furan. Here, the rate constants for naphthalene, 1,4 dioxane, and furan have been measured and their temperature dependencies are determined when possible, using the University of Georgia's Variable Temperature Flowing Afterglow. The rate constants are compared with those previously published for other compounds; these show trends which illustrate the effects which multi-rings and oxygen heteroatoms substitutions have upon e-IDR rate constants.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Modulation instability and dissipative rogue waves in ion-beam plasma: Roles of ionization, recombination, and electron attachment

The amplitude modulation of ion-acoustic waves is investigated in an unmagnetized plasma containing positive ions, negative ions, and electrons obeying a kappa-type distribution that is penetrated by a positive ion beam. By considering dissipative mechanisms, including ionization, negative-positive ion recombination, and electron attachment, we introduce a comprehensive model for the plasma with the effects of sources and sinks. Via reductive perturbation theory, the modified nonlinear Schrödinger equation with a dissipative term is derived to govern the dynamics of the modulated waves. The effect of the plasma parameters on the modulation instability criterion for the modified nonlinear Schrödinger equation is numerically investigated in detail. Within the unstable region, first- and second-order dissipative ion-acoustic rogue waves are present. The effect of the plasma parameters on the characteristics of the dissipative rogue waves is also discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Non-radiative recombination in Ge{sub 1−y}Sn{sub y} light emitting diodes: The role of strain relaxation in tuned heterostructure designs

This paper describes the properties of Ge{sub 1−y}Sn{sub y} light emitting diodes with a broad range of Sn concentrations (y = 0.0–0.11). The devices are grown upon Si(100) platforms using ultra-low temperature deposition of highly reactive Ge and Sn hydrides. The device fabrication adopts two new photodiode designs which lead to optimized performance and enables a systematic study of the effects of strain relaxation on emission efficiency. In contrast with n-Ge/i-Ge{sub 1−y}Sn{sub y}/p-Ge analogs, which in most cases contain two defected interfaces, our designs include a p-layer with composition Ge{sub 1−z}Sn{sub z} chosen to be z < y to facilitate light extraction, but with z close enough to y to guarantee no strain relaxation at the i/p interface. In addition, a Ge{sub 1−x}Sn{sub x} alloy is also used for the n layer, with compositions in the 0 ≤ x ≤ y range, so that defected and non-defected n/i interfaces can be studied. The electroluminescence spectra vs the Sn content y in the intrinsic layer of the diodes exhibit a monotonic shift in the emission wavelength from 1550 nm to 2500 nm. On the other hand, the emission intensities show a complex dependence that cannot be explained solely on the basis of Sn concentrations. Detailed theoretical modeling of these intensities makes it possible to extract recombination lifetimes that are found to be more than three times longer in samples in which strain relaxation has not occurred at the n-i interface, demonstrating the existence of a large non-radiative contribution from the relaxation defects. This finding is particularly significant for direct gap diodes with y > 0.09, for which it is practically impossible to avoid strain relaxation in n-Ge/i-Ge{sub 1−y}Sn{sub y}/p-Ge analogs. The new designs introduced here open the door to the fabrication of highly efficient electrically pumped systems for applications in future generations of integrated photonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The impact of Cu on recombination in high voltage CdTe solar cells

Using photoluminescence spectroscopy, we construct a recombination model for state-of-the-art CdTe solar cells doped with Cu. Here, we observe that Cu on Cd sites form a dominant acceptor state about 150 meV from the valence band. Although it is intuitive that this state can increase hole density, we also find that this relatively shallow dopant can also limit lifetime. Consequently, CdTe solar cells doped with Cu could have a lifetime limitation inversely proportional to the hole concentration.

14 SOLAR ENERGY↗

Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1×10 –26 cm 6 /s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K–80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K•p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. In conclusion, the experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of the electrostatic surface potential on the oligomerization of full-length human recombinant prion protein at single-molecule level

The electrostatic surface potential (ESP) of prion oligomers has critical influences on the aggregating processes of the prion molecules. The atomic force microscopy (AFM) and structural simulation were combined to investigate the molecular basis of the full-length human recombinant prion oligomerization on mica surfaces. The high resolution non-intrusive AFM images showed that the prion oligomers formed different patterns on mica surfaces at different buffer pH values. The basic binding units for the large oligomers were determined to be prion momoners (Ms), dimers (Ds), and trimers (Ts). The forming of the D and T units happened through the binding of hydrophobic β-sheets of the M units. In contrast, the α-helices of these M, D, and T units were the binding areas for the formation of large oligomers. At pH 4.5, the binding units M, D, and T showed clear polarized ESP distributions on the surface domains, while at pH 7.0, they showed more evenly distributed ESPs. Based on the conformations of oligomers observed from AFM images, the D and T units were more abundantly on mica surface at pH 4.5 because the ESP re-distribution of M units helped to stabilize these larger oligomers. The amino acid side chains involved in the binding interfaces were stabilized by hydrogen bonds and electrostatic interactions. The detailed analysis of the charged side chains at pH 4.5 indicated that the polarized ESPs induced the aggregations among M, D, and T to form larger oligomers. Therefore, the hydrogen bonds and electrostatic interactions worked together to form the stabilized prion oligomers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

First measurement of the edge charge exchange recombination spectroscopy on EAST tokamak

An edge toroidal charge exchange recombination spectroscopy (eCXRS) diagnostic, based on a heating neutral beam injection (NBI), has been deployed recently on the Experimental Advanced Superconducting Tokamak (EAST). The eCXRS, which aims to measure the plasma ion temperature and toroidal rotation velocity in the edge region simultaneously, is a complement to the exiting core CXRS (cCXRS). Two rows with 32 fiber channels each cover a radial range from ∼2.15 m to ∼2.32 m with a high spatial resolution of ∼5-7 mm. Charge exchange emission of Carbon VI CVI at 529.059 nm induced by the NBI is routinely observed, but can be tuned to any interested wavelength in the spectral range from 400 to 700 nm. Double-slit fiber bundles increase the number of channels, the fibers viewing the same radial position are binned on the CCD detector to improve the signal-to-noise ratio, enabling shorter exposure time down to 5 ms. One channel is connected to a neon lamp, which provides the real-time wavelength calibration on a shot-to-shot basis. In this paper, an overview of the eCXRS diagnostic on EAST is presented and the first results from the 2015 experimental campaign will be shown. Good agreements in ion temperature and toroidal rotation are obtained between the eCXRS and cCXRS systems.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Improved edge charge exchange recombination spectroscopy in DIII-D

The charge exchange recombination spectroscopy diagnostic on the DIII-D tokamak has been upgraded with the addition of more high radial resolution view chords near the edge of the plasma ( r/a > 0.8). The additional views are diagnosed with the same number of spectrometers by placing fiber optics side-by-side at the spectrometer entrance with a precise separation that avoids wavelength shifted crosstalk without the use of bandpass filters. The new views improve measurement of edge impurity parameters in steep gradient, H-mode plasmas with many different shapes. The number of edge view chords with 8 mm radial separation has increased from 16 to 38.As a result, new fused silica fibers have improved light throughput and clarify the observation of non-Gaussian spectra that suggest the ion distribution function can be non-Maxwellian in low collisionality plasmas.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Optimization and application of cooled avalanche photodiodes for spectroscopic fluctuation measurements with ultra-fast charge exchange recombination spectroscopy

The Ultra Fast Charge Exchange Recombination Spectroscopy (UF-CHERS) diagnostic is a highly specialized spectroscopic instrument with 2 spatial channels consisting of 8 spectral channels each and a resolution of ~0.25 nm deployed at DIII-D to measure turbulent ion temperature fluctuations. Charge exchange emissions are obtained between 528-530 nm with 1 μs time resolution to study plasma instabilities. A primary challenge of extracting fluctuation measurements from raw UF-CHERS signals is photon and electronic noise. In order to reduce dark current, the Avalanche Photodiode (APD) detectors are thermoelectrically cooled. State-of-the-art components are used for the signal amplifiers and conditioners to minimize electronic noise. Due to the low incident photon power (≤ 1 nW), APDs with a gain of up to 300 are used to optimize the signal to noise ratio. Maximizing the APDs’ gain while minimizing the excess noise factor (ENF) is essential since the total noise of the diagnostic sets a floor for the minimum level of detectable broadband fluctuations. The APDs’ gain should be high enough that photon noise dominates electronic noise, but not excessive so that the ENF overwhelms plasma fluctuations. A new generation of cooled APDs and optimized preamplifiers exhibits significantly enhanced signal-to-noise compared to a previous generation. Experiments at DIII-D have allowed for characterization and optimization of the ENF vs. gain. Here, a gain of ~100 at 1700 V is found to be near optimal for most plasma conditions. Ion temperature and toroidal velocity fluctuations due to the Edge Harmonic Oscillation (EHO) in Quiescent H-mode (QH) plasmas are presented to demonstrate UF-CHERS’ capabilities.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Measurement of deuterium density profiles in the H-mode steep gradient region using charge exchange recombination spectroscopy on DIII-D

Recent completion of a thirty two channel main-ion (deuterium) charge exchange recombination spectroscopy (CER) diagnostic on the DIII-D tokamak enables detailed comparisons between impurity and main-ion temperature, density, and toroidal rotation. In a H-mode DIII-D discharge, these new measurement capabilities are used to provide the deuterium density profile, demonstrate the importance of profile alignment between Thomson scattering and CER diagnostics, and aid in determining the electron temperature at the separatrix. Sixteen sightlines cover the core of the plasma and another sixteen are densely packed towards the plasma edge, providing high resolution measurements across the pedestal and steep gradient region in H-mode plasmas. Extracting useful physical quantities such as deuterium density is challenging due to multiple photoemission processes. Finally, these challenges are overcome using a detailed fitting model and by forward modeling the photoemission using the FIDASIM code, which implements a comprehensive collisional radiative model. Published by AIP Publishing.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It has been found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surface coverage is ~10 12 cm -2 , which is consistent with previous reports on GaAs and silicon wafers. At the onset of growth, the Ca species segregates at the growth front while incorporating at low levels. The incorporation rate is strongly temperature dependent. It is about 0.03% at 820 °C and increases by two orders of magnitude when the temperature is reduced to 600 °C, which is the typical growth temperature for InGaN alloy. Consequently, [Ca] is as high as 10 18 cm -3 in InGaN/GaN quantum well structures. Such a huge concentration might be detrimental for the efficiency of light emitting diodes (LEDs) if one considers that Ca is potentially a source of Shockley-Read-Hall (SRH) defects. We thus developed a specific growth strategy to reduce [Ca] in the MBE grown LEDs, which consisted of burying Ca in a low temperature InGaN/GaN superlattice (SL) before the growth of the active region. Finally, two LED samples with and without an SL were fabricated. An increase in the output power by one order of magnitude was achieved when Ca was reduced in the LED active region, providing evidence for the role of Ca in the SRH recombination.

36 MATERIALS SCIENCE↗

Synthetic diagnostic for assessing spatial averaging of charge exchange recombination spectroscopy measurements

A synthetic charge exchange recombination spectroscopy diagnostic based on the FIDASIM modeling suite has been created for the DIII-D tokamak. This synthetic diagnostic assumes that the ions have Maxwellian distribution functions on each flux surface and models emission from charge exchange events between the beam neutrals and a fully ionized impurity. This work was motivated by the observation of non-Gaussian spectra that may be caused by spatial averaging, atomic physics, or non-Maxwellian distribution functions. Measurements of non-Gaussian spectra commonly observed in the high confinement mode pedestal and in plasmas with large core gradients are compared to the synthetic diagnostic. Spatial averaging alone cannot account for the observations in these two cases, opening up the possibility of there being other causes such as non-Maxwellian distribution functions. Here, the synthetic diagnostic has also been used to resolve a long-standing issue: it is shown that the lower temperatures measured by using vertical view chords relative to tangential view chords are due to increased spatial averaging for vertical views due to the DIII-D neutral beams being approximately twice as tall as they are wide.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Non-radiative recombination at dislocations in InAs quantum dots grown on silicon

We study the impact of misfit dislocations on the luminescence from InAs quantum dots (QDs) grown on Si substrates. Electron channeling contrast imaging is used together with cathodoluminescence mapping to locate misfit dislocations and characterize the resulting nonradiative recombination of carriers via near-infrared light emission profiles. With a 5 kV electron beam probe, the dark line defect width due to a typical misfit dislocation in a shallow QD active layer is found to be approximately 1 μ m, with a 40%–50% peak emission intensity loss at room temperature. Importantly, we find that at cryogenic temperatures, the dislocations affect the QD ground state and the first excited state emission significantly less than the second excited state emission. At the same time, the dark line defect width, which partially relates to carrier diffusion in the system, is relatively constant across the temperature range of 10 K–300 K. Our results suggest that carrier dynamics in the QD wetting layer control emission intensity loss at dislocations, and that these defects reduce luminescence only at those temperatures where the probability of carriers thermalizing from the dots into the wetting layer becomes significant. We discuss the implications of these findings toward growing dislocation-tolerant, reliable quantum dot lasers on silicon.

Electron beams↗

Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. Here, the detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.

36 MATERIALS SCIENCE↗

Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Here, we analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombination-enhanced climb and glide processes constrained by the epitaxial structure. An examination of the dislocation geometry reveals that the climb process involves the addition of atoms to the extra half plane of the dislocation. Spontaneous emission from the QDs is also dimmer after aging. Additionally, the signature of misfit dislocations in the unaged laser, discernible as sharp dark lines in spatially resolved cathodoluminescence, is replaced by finer, more inhomogeneous contrast upon aging. We speculate that this change arises from vacancy clouds expelled from the dislocation during climb. With this insight, we evaluate the driving forces for dislocation climb that could be at play and discuss the origins of slow degradation in QD lasers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The influence of lattice defects, recombination, and clustering on thermal transport in single crystal thorium dioxide

Thermal transport is a key controlling property for thorium dioxide in many applications where defect-generating radiation fields are present. An understanding of the effect of nanoscale lattice defects on thermal transport in this material is currently unavailable due to a lack of high-quality, single crystal material from which unit processes may be investigated. In this work, a series of thorium dioxide single crystals are exposed to 2 MeV proton irradiation at room temperature and 600°C to create microscale regions with varying densities and types of point and extended defects. Defected regions are investigated using spatial domain thermoreflectance to quantify the change in thermal conductivity as a function of ion fluence as well as transmission electron microscopy and Raman spectroscopy to interrogate the structure of the generated defects. Together, this com- bination of methods provides important initial insight into defect formation, recombination, and clustering in thorium dioxide and the effect of those defects on thermal transport. These methods also provide a promising pathway for the quantification of the smallest-scale defects which cannot be captured using traditional microscopy techniques and play and outsized role in degrading thermal performance.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Ion temperature and rotation fluctuation measurements with ultra-fast charge exchange recombination spectroscopy (UF-CHERS) in the DIII-D tokamak

An upgraded detector and several optimizations have significantly improved the Ultra-Fast Charge Exchange Recombination Spectroscopy (UF-CHERS) diagnostic sensitivity to ion temperature and parallel velocity fluctuations at turbulence relevant spatio-temporal scales. Normalized broadband ion temperature and parallel velocity fluctuations down to x̃x∼1% (x = Ti, v∥) and up to ∼450 kHz have been measured in a variety of plasmas. The multi-field nature of the CHERS technique also allows measurements of the cross-phase angles of the fluctuating fields. UF-CHERS is optimized to observe emissions from the electron exchange reaction between intrinsic C6+ and hydrogenic neutral beam injected particles near 529 nm. UF-CHERS consists of two chords separated by ∼1 cm radially, less than the turbulence correlation length in DIII-D plasmas, which enables correlated measurements to suppress incoherent electronic and photon noise. The optical components of the spectrometer include a volume-phase-holographic grating with >90% transmission between 528 and 530 nm and f/2 200-mm lenses, selected to maximize the optical efficiency and photon flux. Diffracted light from each chord is collected in eight spectral bins, each with a bandwidth of ∼0.25 nm, and detected and amplified by chilled avalanche photodiodes and custom high-gain, wide bandwidth low-noise preamplifiers to achieve the optimal signal-to-noise ratio. The resulting signals are digitized at 1 MHz, 103–104× faster than the conventional CHERS diagnostics. Spatial coverage is achieved by repositioning a motorized fiber tray between plasmas. UF-CHERS measurements will advance the understanding of turbulent ion transport and contribute to the validation of transport models and simulations.

Truong, D. D. (ORCID:0000000285732539)↗