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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Current-direction dependence of the transport properties in single-crystalline face-centered-cubic cobalt films

Face-centered-cubic cobalt films are epitaxially grown on insulating LaAlO{sub 3}(001) substrates by molecular beam epitaxy. Transport measurements are conducted in different current directions relative to the crystal axes. We find that the temperature dependent anisotropic magnetoresistance ratio strongly depends on the current direction. However, the anomalous Hall effect shows isotropic behavior independent of the current direction. Our results demonstrate the interplay between the current direction and the crystalline lattice in single-crystalline ferromagnetic films. A phenomenological analysis is presented to interpret the experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effect of Fe-doping on nonlinear optical responses and carrier trapping dynamics in GaN single crystals

We presented a quantitative study on the Fe-doping concentration dependence of optical nonlinearities and ultrafast carrier dynamics in Fe-doped GaN (GaN:Fe) single crystals using picosecond Z-scan and femtosecond pump-probe with phase object techniques under two-photon excitation. In contrast to the two-photon absorption that was found to be independent on the Fe-doping, the nonlinear refraction decreased with the Fe concentration due to the fast carrier trapping effect of Fe{sup 3+}/Fe{sup 2+} deep acceptors, which simultaneously acted as an efficient non-radiative recombination channels for excess carriers. Remarkably, compared to that of Si-doped GaN bulk crystal, the free-carrier refraction effect in GaN:Fe crystals was found to be enhanced considerably since Fe-doping and the effective carrier lifetime (∼10 ps) could be tuned over three orders of magnitude at high Fe-doping level of 1 × 10{sup 19 }cm{sup −3}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Acoustic travel time gauges for in-situ determination of pressure and temperature in multi-anvil apparatus

In this study, we developed a new method for in-situ pressure determination in multi-anvil, high-pressure apparatus using an acoustic travel time approach within the framework of acoustoelasticity. The ultrasonic travel times of polycrystalline Al{sub 2}O{sub 3} were calibrated against NaCl pressure scale up to 15 GPa and 900 °C in a Kawai-type double-stage multi-anvil apparatus in conjunction with synchrotron X-radiation, thereby providing a convenient and reliable gauge for pressure determination at ambient and high temperatures. The pressures derived from this new travel time method are in excellent agreement with those from the fixed-point methods. Application of this new pressure gauge in an offline experiment revealed a remarkable agreement of the densities of coesite with those from the previous single crystal compression studies under hydrostatic conditions, thus providing strong validation for the current travel time pressure scale. The travel time approach not only can be used for continuous in-situ pressure determination at room temperature, high temperatures, during compression and decompression, but also bears a unique capability that none of the previous scales can deliver, i.e., simultaneous pressure and temperature determination with a high accuracy (±0.16 GPa in pressure and ±17 °C in temperature). Therefore, the new in-situ Al{sub 2}O{sub 3} pressure gauge is expected to enable new and expanded opportunities for offline laboratory studies of solid and liquid materials under high pressure and high temperature in multi-anvil apparatus.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A first-principles study of cementite (Fe{sub 3}C) and its alloyed counterparts: Elastic constants, elastic anisotropies, and isotropic elastic moduli

A comprehensive computational study of elastic properties of cementite (Fe{sub 3}C) and its alloyed counterparts (M{sub 3}C (M = Al, Co, Cr, Cu, Fe, Hf, Mn, Mo, Nb, Ni, Si, Ta, Ti, V, W, Zr, Cr{sub 2}FeC and CrFe{sub 2}C) having the crystal structure of Fe{sub 3}C is carried out employing electronic density-functional theory (DFT), all-electron PAW pseudopotentials and the generalized gradient approximation for the exchange-correlation energy (GGA). Specifically, as a part of our systematic study of cohesive properties of solids and in the spirit of materials genome, following properties are calculated: (i) single-crystal elastic constants, C{sub ij}, of above M{sub 3}Cs; (ii) anisotropies of bulk, Young’s and shear moduli, and Poisson’s ratio based on calculated C{sub ij}s, demonstrating their extreme anisotropies; (iii) isotropic (polycrystalline) elastic moduli (bulk, shear, Young’s moduli and Poisson’s ratio) of M{sub 3}Cs by homogenization of calculated C{sub ij}s; and (iv) acoustic Debye temperature, θ{sub D}, of M{sub 3}Cs based on calculated C{sub ij}s. We provide a critical appraisal of available data of polycrystalline elastic properties of alloyed cementite. Calculated single crystal properties may be incorporated in anisotropic constitutive models to develop and test microstructure-processing-property-performance links in multi-phase materials where cementite is a constituent phase.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Study of resistive switching and magnetism modulation in the Pt/CoFe{sub 2}O{sub 4}/Nb:SrTiO{sub 3} heterostructures

CoFe{sub 2}O{sub 4} (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO{sub 3} (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These heterostructures exhibit typical bipolar resistive switching effect with maximum switching ratio of 5 × 10{sup 4}, multi-level resistance states, excellent retention, and anti-fatigue properties. When the resistance states of the heterostructures are switched between low resistance state and high resistance state upon applying bias voltages, the saturation magnetization of the CFO films shows corresponding changes associated with the resistive switching. These close correlations between the resistive switching and the magnetization can be attributed to the electrons filling into and releasing from the defect energy levels introduced by oxygen vacancies in the CFO film. These results show potential application in the multi-functional magnetoelectric sensor and non-volatile multi-level resistive switching memory.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Lattice dynamics of K{sub x}RhO{sub 2} single crystals

A series of crystals K{sub x}RhO{sub 2} (x = 0.72, 0.63, 0.55, 0.39, and 0.24) have been synthesized and their vibrational properties have been studied by first principles calculations, Raman spectroscopy, and inelastic neutron scattering. The measured vibrational spectra of K{sub x}RhO{sub 2} for x = 0.72 and 0.63 are consistent with the theoretical prediction for the stoichiometric KRhO{sub 2}. For samples with x = 0.55, 0.39 and 0.24, extra vibrational modes have been observed and they are believed to be due to the symmetry reduction and the loss of translational symmetry induced by K disorder. The good agreement was found for the phonon density of states among the Raman spectroscopic observations, inelastic neutron scattering and the first principles calculations, as an evidence for the generation of structure disorder by K deficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The atomic structure of low-index surfaces of the intermetallic compound InPd

The intermetallic compound InPd (CsCl type of crystal structure with a broad compositional range) is considered as a candidate catalyst for the steam reforming of methanol. Single crystals of this phase have been grown to study the structure of its three low-index surfaces under ultra-high vacuum conditions, using low energy electron diffraction (LEED), X-ray photoemission spectroscopy (XPS), and scanning tunneling microscopy (STM). During surface preparation, preferential sputtering leads to a depletion of In within the top few layers for all three surfaces. The near-surface regions remain slightly Pd-rich until annealing to ∼580 K. A transition occurs between 580 and 660 K where In segregates towards the surface and the near-surface regions become slightly In-rich above ∼660 K. This transition is accompanied by a sharpening of LEED patterns and formation of flat step-terrace morphology, as observed by STM. Several superstructures have been identified for the different surfaces associated with this process. Annealing to higher temperatures (≥750 K) leads to faceting via thermal etching as shown for the (110) surface, with a bulk In composition close to the In-rich limit of the existence domain of the cubic phase. The Pd-rich InPd(111) is found to be consistent with a Pd-terminated bulk truncation model as shown by dynamical LEED analysis while, after annealing at higher temperature, the In-rich InPd(111) is consistent with an In-terminated bulk truncation, in agreement with density functional theory (DFT) calculations of the relative surface energies. More complex surface structures are observed for the (100) surface. Additionally, individual grains of a polycrystalline sample are characterized by micro-spot XPS and LEED as well as low-energy electron microscopy. Results from both individual grains and “global” measurements are interpreted based on comparison to our single crystals findings, DFT calculations and previous literature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Magnetic field induced extraordinary photoluminescence enhancement in Er{sup 3+}:YVO{sub 4} single crystal

A bright green photoluminescence (PL) from {sup 4}S{sub 3∕2} → {sup 4}I{sub 15∕2} emission band in Er{sup 3+}:YVO{sub 4} single crystal has been observed with the excitation of an argon laser at 488.0 nm. More than two orders of PL enhancement have been obtained under the effect of magnetic fields, and the enhancement factor f reaches 170 when the applied magnetic field is 7.7 T under the sample temperature of 4.2 K. Unusually, the PL enhancements only happen at some certain magnetic fields (B{sub c}s), and a decrease of sample temperature will lead to the increase of f and decrease of B{sub c}. The results confirm that this PL enhancement originates from the resonance excitation of the electron transitions induced by the cross of the laser energy and the absorption energy modulated by both the magnetic field and temperature. This special PL enhancement in Er{sup 3+}:YVO{sub 4} single crystal can be applied in the calibration of pulsed high magnetic field, detection of material fine energy structures, and modulation of magneto-optical devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal

The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Plasma assisted synthesis of vanadium pentoxide nanoplates

In this work, we report the growth of α-V{sub 2}O{sub 5} (orthorhombic) nanoplates on glass substrate using plasma assisted sublimation process (PASP) and Nickel as catalyst. 100 nm thick film of Ni is deposited over glass substrate by thermal evaporation process. Vanadium oxide nanoplates have been deposited treating vanadium metal foil under high vacuum conditions with oxygen plasma. Vanadium foil is kept at fixed temperature growth of nanoplates of V{sub 2}O{sub 5} to take place. Samples grown have been studied using XPS, XRD and HRTEM to confirm the growth of α-phase of V{sub 2}O{sub 5}, which revealed pure single crystal of α- V{sub 2}O{sub 5} in orthorhombic crystallographic plane. Surface morphological studies using SEM and TEM show nanostructured thin film in form of plates. Uniform, vertically aligned randomly oriented nanoplates of V{sub 2}O{sub 5} have been deposited.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of nickel seed layer on growth of α-V{sub 2}O{sub 5} nanostructured thin films

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ∼ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V{sub 2}O{sub 5} film deposited on both substrates are carried out by SEM, revealed that features of V{sub 2}O{sub 5} NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structural, vibrational and magnetic properties of Ni{sub 1−x}Co{sub x}Fe{sub 2}O{sub 4} ferrites

The ferrite with chemical formula Ni{sub 1−x}Co{sub x}Fe{sub 2}O{sub 4} (x= 0.00, 0.50, 1.00) were prepared using sol-gel method. X-ray diffraction (XRD), Raman spectroscopy and physical property measurement system (PPMS) were used to characterize the structural, vibrational and magnetic properties. XRD pattern confirmed single crystalline spinel structure of Nickel ferrite with Co substitution. Lattice parameter variation confirms the substitution of Co{sup 2+} ions at the place of Ni{sup 2+} into the nickel ferrite. Raman scattering at room temperature is used to study the redistribution of Ni and Co cations between tetrahedral (A) and octahedral (B) sites. A shift is observed in Co substitute nickel ferrite in both XRD and Raman studies. M-H hysteresis is carried out at room temperature. Saturation magnetization of the samples is increased with the Co{sup 2+} ions substitution.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Lateral electric-field control of giant magnetoresistance in Co/Cu/Fe/BaTiO{sub 3} multiferroic heterostructure

We report lateral electric-field-driven sizable changes in the magnetoresistance of Co/Cu/Fe tri-layered wires on BaTiO{sub 3} single crystal. While the observed change is marginal in the tetragonal phase of BaTiO{sub 3}, it reaches over 40% in the orthorhombic and rhombohedral phases with an electric field of 66 kV/cm. We attribute it to possible electric-field-induced variations of the spin-dependent electronic structures, i.e., spin polarization, of the Fe via interfacial strain transfer from BaTiO{sub 3}. The contrasting results for the different phases of BaTiO{sub 3} are discussed, associated with the distinct aspects of the ferroelectric polarization switching processes in each phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Cu diffusion in single-crystal and polycrystalline TiN barrier layers: A high-resolution experimental study supported by first-principles calculations

Dense single-crystal and polycrystalline TiN/Cu stacks were prepared by unbalanced DC magnetron sputter deposition at a substrate temperature of 700 °C and a pulsed bias potential of −100 V. The microstructural variation was achieved by using two different substrate materials, MgO(001) and thermally oxidized Si(001), respectively. Subsequently, the stacks were subjected to isothermal annealing treatments at 900 °C for 1 h in high vacuum to induce the diffusion of Cu into the TiN. The performance of the TiN diffusion barrier layers was evaluated by cross-sectional transmission electron microscopy in combination with energy-dispersive X-ray spectrometry mapping and atom probe tomography. No Cu penetration was evident in the single-crystal stack up to annealing temperatures of 900 °C, due to the low density of line and planar defects in single-crystal TiN. However, at higher annealing temperatures when diffusion becomes more prominent, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N sublattice for the experimental N/Ti ratio. In comparison, localized diffusion of Cu along grain boundaries in the columnar polycrystalline TiN barriers was detected after the annealing treatment. The maximum observed diffusion length was approximately 30 nm, yielding a grain boundary diffusion coefficient of the order of 10{sup −16} cm{sup 2} s{sup −1} at 900 °C. This is 10 to 100 times less than for comparable underdense polycrystalline TiN coatings deposited without external substrate heating or bias potential. The combined numerical and experimental approach presented in this paper enables the contrasting juxtaposition of diffusion phenomena and mechanisms in two TiN coatings, which differ from each other only in the presence of grain boundaries.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition

Defect formation during diamond homoepitaxial growth was sufficiently inhibited by adding oxygen simultaneously in the growth ambient with high concentration of 2%. A 30-μm thick diamond films with surface roughness of <2 nm were homoepitaxially deposited on the (100) diamond single crystal substrates with reasonable growth rate of approximately 3 μm h{sup −1} under the conditions of higher methane concentration of 10%, higher substrate temperature of ∼1000 °C, and higher microwave power density condition of >100 W cm{sup −3}. Surface characteristic patterns moved to an identical direction with growth thickness, indicating that lateral growth was dominant growth mode. High chemical purity represented by low nitrogen concentration of less than 1 ppb and the highest {sup 12}C isotopic ratio of 99.998% of the obtained homoepitaxial diamond (100) films suggest that the proposed growth condition has high ability of impurity control.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Coherent phonon spectroscopy of non-fully symmetric modes using resonant terahertz excitation

We use intense terahertz (THz) frequency electromagnetic pulses generated via optical rectification in an organic crystal to drive vibrational lattice modes in single crystal Tellurium. The coherent modes are detected by measuring the polarization changes of femtosecond laser pulses reflecting from the sample surface, resulting in a phase-resolved detection of the coherent lattice motion. We compare the data to a model of Lorentz oscillators driven by the near-single-cycle broadband THz pulse. The demonstrated technique of optically probed coherent phonon spectroscopy with THz frequency excitation could prove to be a viable alternative to other time-resolved spectroscopic methods like standard THz time domain spectroscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗