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At least 883 records · Page 49

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NASA NTRS2000

Tera-Ops Processing for ATR

A three-dimensional microelectronic device (3DANN-R) capable of performing general image convolution at the speed of 1012 operations/second (ops) in a volume of less than 1.5 cubic centimeter has been successfully built under the BMDO/JPL VIGILANTE program. 3DANN-R was developed in partnership with Irvine Sensors Corp., Costa Mesa, California. 3DANN-R is a sugar-cube-sized, low power image convolution engine that in its core computation circuitry is capable of performing 64 image convolutions with large (64x64) windows at video frame rates. This paper explores potential applications of 3DANN-R such as target recognition, SAR and hyperspectral data processing, and general machine vision using real data and discuss technical challenges for providing deployable systems for BMDO surveillance and interceptor programs.

Udomkesmalee, Suraphol↗

NASA NTRS2000

A Hot-electron Direct Detector for Radioastronomy

A new approach is proposed to improve the sensitivity of direct-detection bolometers. The idea is to adjust a speed of the thermal relaxation of hot-electrons in a nanometer size normal metal or superconductive transition edge bolometer by controlling the elastic electron mean free path. If the bolometer contacts are made of a superconductor with high critical temperature then the thermal diffusion into the contacts is absent because of the Andreev's reflection and the electron-phonon relaxation is the only mechanism for heat removal. The relaxation rate should behave as 7(exp 4)l at subkelvin temperatures (l is the electron elastic mean free path) and can be reduced by factor of 10 - 100 by decreasing l. Then an antenna- or waveguide-coupled bolometer with a time constant approx. 10(exp -3) to 10(exp -5) S at T approx. = 0.1 - 0.3 K will exhibit photon-noise limited performance in millimeter and subn-millimeter range. The bolometer will have a figure-of-merit NEk square root of tau approx. = 10(exp -22) 10(exp -21) W/Hz at 100 mK which is 10(exp 3) times smaller than that of a state-of-the-art bolometer. This will allow for a tremendous increase in speed which will have a significant impact for observational mapping applications. Alternatively, the bolometer could operate at higher temperature with still superior sensitivity This research was performed by the Center for Space Microelectronics Technology, JPL, California Institute of Technology, under the contract for NASA.

Karasik, B. S.↗

NASA NTRS1999

Fluid Dynamics and Solidification of Molten Solder Droplets Impacting on a Substrate in Microgravity

This program investigates the fluid dynamics and simultaneous solidification of molten solder droplets impacting on a flat smooth substrate. The problem of interest is directly relevant to the printing of microscopic solder droplets in surface mounting of microelectronic devices. The study consists of a theoretical and an experimental component. The theoretical work uses axisymmetric Navier-Stokes models based on finite element techniques. The experimental work will be ultimately performed in microgravity in order to allow for the use of larger solder droplets which make feasible the performance of accurate measurements, while maintaining similitude of the relevant fluid dynamics groups (Re, We).

Megardis, C. M.↗

NASA NTRS2000

NDE for Material Characterization in Aeronautic and Space Applications

This paper describes selected nondestructive evaluation (NDE) approaches that were developed or tailored at the NASA Glenn Research Center for characterizing advanced material systems. The emphasis is on high-temperature aerospace propulsion applications. The material systems include monolithic ceramics, superalloys, and high temperature composites. In the aeronautic area, the highlights are cooled ceramic plate structures for turbine applications, F-TiAl blade materials for low-pressure turbines, thermoelastic stress analysis (TSA) for residual stress measurements in titanium based and nickel based engine materials, and acousto ultrasonics (AU) for creep damage assessment in nickel-based alloys. In the space area, examples consist of cooled carbon-carbon composites for gas generator combustors and flywheel rotors composed of carbon fiber reinforced polymer matrix composites for energy storage on the international space station (ISS). The role of NDE in solving manufacturing problems, the effect of defects on structural behavior, and the use of NDE-based finite element modeling are discussed. NDE technology needs for improved microelectronic and mechanical systems as well as health monitoring of micro-materials and components are briefly discussed.

Baaklini, George Y.↗

NASA NTRS2000

A Coupled Plasma-Sheath Model for High Density Sources

High density, low pressure plasmas are used for etching and deposition in microelectronics fabrication processes. The process characteristics are strongly determined by the ion energy distribution (IED) and the ion flux arriving at the substrate that are responsible for desorption of etch products and neutral dissociation at the surface. The ion flux and energy are determined by a self- consistent modeling of the bulk plasma, where the ions and the neutral radicals are produced, and the sheath, where the ions are accelerated. Due to their widely different time scales, it is a formidable task to self-consistently resolve non-collisional sheath in a high density bulk plasma model. In this work, we first describe a coupled plasma-sheath model that attempts to resolve the non-collisional sheath in a reactor scale model. Second, we propose a semianalytical radio frequency (RF) sheath model to improve ion dynamics.

Bose, Deepak↗

NASA NTRS2001

Measurements of Thermophysical Properties of Molten Silicon and Geranium

The objective of this ground base program is to measure thermophysical properties of molten/ undercooled silicon, germanium, and Si-Ge alloys using a high temperature electrostatic levitator and in clearly assessing the need of the microgravity environment to achieve the objective with higher degrees of accuracy. Silicon and germanium are two of the most important semiconductors for industrial applications: silicon is unsurpassed as a microelectronics material, occupying more than 95% of the electronics market. Si-Ge alloy is attracting keen interest for advanced electronic and optoelectronic applications in view of its variable band gap and lattice parameter depending upon its composition. Accurate thermophysical properties of these materials are very much needed in the semiconductor industry for the growth of large high quality crystals.

Rhim, Won-Kyu↗

NASA NTRS2000

Langmuir Probe Measurements in an Inductively Coupled Ar/CF4 Plasmas

Technological advancement in the microelectronics industry requires an understanding of the physical and chemical processes occurring in plasmas of fluorocarbon gases, such as carbon tetrafluoride (CF4) which is commonly used as an etchant, and their mixtures to optimize various operating parameters. In this paper we report data on electron number density (ne), electron temperature'(Te), electron energy distribution function (EEDF), mean electron energy, ion number density (ni), and plasma potential (Vp) measured by using Langmuir probe in an inductively coupled 13.56 MHz radio frequency plasmas generated in 50%Ar:50%CF4 mixture in the GEC cell. The probe data were recorded at various radial positions providing radial profiles of these plasma parameters at 10-50 mTorr pressures and 200 W and 300 W of RF power. Present measurements indicate that the electron and ion number densities increase with increase in pressure and power. Whereas the plasma potential and electron temperature decrease with increase in pressure, and they weakly depend on RF power. The radial profiles exhibit that the electron and ion number densities and the plasma potential peak at the center of the plasma with an exponential fall away from it, while the electron temperature has a minimum at the center and it increases steadily towards the electrode edge. The EEDFs have a characteristic drop near the low energy end at all pressures and pressures and their shapes represent non-Maxwellian plasma and exhibit more like Druyvesteyn energy distribution.v

Rao, M. V. V. S.↗

NASA NTRS2000

Smallest Nanoelectronic with Atomic Devices with Precise Structures

Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.

Yamada, Toshishige↗

NASA NTRS2001

Micro-Scale Avionics Thermal Management

Trends in the thermal management of avionics and commercial ground-based microelectronics are converging, and facing the same dilemma: a shortfall in technology to meet near-term maximum junction temperature and package power projections. Micro-scale devices hold the key to significant advances in thermal management, particularly micro-refrigerators/coolers that can drive cooling temperatures below ambient. A microelectromechanical system (MEMS) Stirling cooler is currently under development at the NASA Glenn Research Center to meet this challenge with predicted efficiencies that are an order of magnitude better than current and future thermoelectric coolers.

Moran, Matthew E.↗

NASA NTRS2001

NASA IVHM Technology Experiment for X-vehicles (NITEX)

The purpose of the NASA IVHM Technology Experiment for X-vehicles (NITEX) is to advance the development of selected IVHM technologies in a flight environment and to demonstrate the potential for reusable launch vehicle ground processing savings. The technologies to be developed and demonstrated include system-level and detailed diagnostics for real-time fault detection and isolation, prognostics for fault prediction, automated maintenance planning based on diagnostic and prognostic results, and a microelectronics hardware platform. Complete flight The Evolution of Flexible Insulation as IVHM consists of advanced sensors, distributed data acquisition, data processing that includes model-based diagnostics, prognostics and vehicle autonomy for control or suggested action, and advanced data storage. Complete ground IVHM consists of evolved control room architectures, advanced applications including automated maintenance planning and automated ground support equipment. This experiment will advance the development of a subset of complete IVHM.

Sandra, Hayden↗

NASA NTRS2001

Advance Power Technology Experiment for the Starshine 3 Satellite

The Starshine 3 satellite will carry several power technology demonstrations. Since Starshine 3 is primarily a passive experiment and does not need electrical power to successfully complete its mission, the requirement for a highly reliable power system is greatly reduced. This creates an excellent opportunity to test new power technologies. Several government and commercial interests have teamed up to provide Starshine 3 with a small power system using state-of-the-art components. Starshine 3 will also fly novel integrated microelectronic power supplies (IWS) for evaluation.

Jenkins, Phillip↗

NASA NTRS1997

JAE: A Jupiter Atmospheric Entry Probe Heating Code

The strong gravitational attraction of Jupiter on probes approaching the planet results in very high atmospheric entry velocities. The values relative to the rotating atmosphere can vary from about 47 to 60 km/sec, depending on the latitude of the entry. Therefore, the peak heating rates and heat shield mass fractions exceed those for any other atmospheric entries. For example, the Galileo probe's heat shield mass fraction was 50%, of which 45% was devoted to the forebody. Although the Galileo probe's mission was very successful, many more scientific questions about the Jovian atmosphere remain to be answered and additional probe missions are being planned. Recent developments in microelectronics have raised the possibility of building smaller and less expensive probes than Galileo. Therefore, it was desirable to develop a code that could quickly compute the forebody entry heating environments when performing parametric probe sizing studies. The Jupiter Atmospheric Entry (JAE) code was developed to meet this requirement. The body geometry consists of a blunt-nosed conical shape of arbitrary nose and base radius and cone angles up to about 65 deg at zero angle of attack.

Wercinski, Paul F.↗

NASA NTRS1997

Fossilization of Coniform (Phormidium) Stromatolites In Siliceous Thermal Springs, Yellowstone National Park

We have studied fossilization processes in well-developed cyanobacterial mats present in mid-terrace ponds of silica-precipitating thermal springs of Yellowstone National Park. These mats occur over temperatures of approx.35-60 C and are dominated by species of Phormidium. Within Bonded systems two end member environments have been distinguished based temperature, depth, and the stability of spring inflows, each differing substantially in the style of stromatolite morphogenesis and fossilization. Type 1 systems include shallow, ephemeral ponds where water flow and temperature fluctuates widely on a seasonal basis; mats typically secrete rapidly up to the air-water interface, forming exposed islands. Silicification occurs primarily by the wicking of water onto the surface of exposed mats, leading to the evaporative concentration of silica near the surface. pH microelectronic measurements in partially-exposed columns show strong gradients in pH with values exceeding 10.5 in the upper am of silicifying mats, decreasing to <9.0 a few mm below the surface. High oxygen concentrations lead to the rapid oxidation of most organic materials. In Type I systems, the tops of coniform and columnar stromatolites become silicified first, followed by the bases. This typically leads to extensive fragmentation during the initial stages of burial. Case 2 systems include deeper ponds where the water flow, temperature and depth are seasonally more stable, and where mats develop larger-scale tufts and columns. Alkalinity in permanently submerged mats increases into tuft interiors from approx.9.0 near the surface to >10.0 at depth. Moderate silicification is apparent throughout mat frameworks, although there is frequently a densely silicified core near the base. In Type 2 systems, preservation of the coniform and columnar architecture of stromatoilites is much more robust. Sub-fossil examples suggest minimal fragmentation prior to burial. Comparative rapid analysis of the phone zones of submerged and exposed (silicifying) mats demonstrated the recovery of comparable levels of esterified fatty acids in both types of mats. Membrane lipids apparently remain intact during the early stages of silicification, although their fate during early diagenesis is still being evaluated.

Farmer, Jack↗

NASA NTRS2002

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗

NASA NTRS2002

Gas-Phase Reaction Pathways and Rate Coefficients for the Dichlorosilane-Hydrogen and Trichlorosilane-Hydrogen Systems

As part of NASA Ames Research Center's Integrated Process Team on Device/Process Modeling and Nanotechnology our goal is to create/contribute to a gas-phase chemical database for use in modeling microelectronics devices. In particular, we use ab initio methods to determine chemical reaction pathways and to evaluate reaction rate coefficients. Our initial studies concern reactions involved in the dichlorosilane-hydrogen (SiCl2H2--H2) and trichlorosilane-hydrogen (SiCl2H-H2) systems. Reactant, saddle point (transition state), and product geometries and their vibrational harmonic frequencies are determined using the complete-active-space self-consistent-field (CASSCF) electronic structure method with the correlation consistent polarized valence double-zeta basis set (cc-pVDZ). Reaction pathways are constructed by following the imaginary frequency mode of the saddle point to both the reactant and product. Accurate energetics are determined using the singles and doubles coupled-cluster method that includes a perturbational estimate of the effects of connected triple excitations (CCSD(T)) extrapolated to the complete basis set limit. Using the data from the electronic structure calculations, reaction rate coefficients are obtained using conventional and variational transition state and RRKM theories.

Dateo, Christopher E.↗

NASA NTRS1998

In situ CF3 Detection in Low Pressure Inductive Discharges by Fourier Transform Infrared Spectroscopy

The detection of CF(x) (x=1-3) radicals in low pressure discharges using source gases such as CF4 and CHF3 is of importance to the understanding of their chemical structure and relevance in plasma based etching processes. These radicals are known to contribute to the formation of fluorocarbon polymer films, which affect the selectivity and anisotropy of etching. In this study, we present preliminary results of the quantitative measurement of trifluoromethyl radicals, CF3, in low pressure discharges. The discharge studied here is an inductively (transformer) coupled plasma (ICP) source in the GEC reference cell, operating on pure CF4 at pressures ranging from 10 - 100 mTorr, This plasma source generates higher electron number densities at lower operating pressures than obtainable with the parallel-plate capacitively coupled version of the GEC reference cell. Also, this expanded operating regime is more relevant to new generations of industrial plasma reactors being used by the microelectronics industry. Fourier transform infrared (FTIR) spectroscopy is employed to observe the absorption band of CF3 radicals in the electronic ground state X2Al in the region of 1233-1270/cm. The spectrometer is equipped with a high sensitivity HgCdTe (MCT) detector and has a fixed resolution of 0.125/cm. The CF3 concentrations are measured for a range of operating pressures and discharge power levels.

Kim, J. S.↗

NASA NTRS1997

Infrared Camera

A sensitive infrared camera that observes the blazing plumes from the Space Shuttle or expendable rocket lift-offs is capable of scanning for fires, monitoring the environment and providing medical imaging. The hand-held camera uses highly sensitive arrays in infrared photodetectors known as quantum well infrared photo detectors (QWIPS). QWIPS were developed by the Jet Propulsion Laboratory's Center for Space Microelectronics Technology in partnership with Amber, a Raytheon company. In October 1996, QWIP detectors pointed out hot spots of the destructive fires speeding through Malibu, California. Night vision, early warning systems, navigation, flight control systems, weather monitoring, security and surveillance are among the duties for which the camera is suited. Medical applications are also expected.

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NASA NTRS1996

Telemetry Systems

Goddard Space Flight Center developed satellite telemetry processing technology to meet NASA's sophisticated processing requirements. The Microelectronic Systems Branch, a 'company' within Goddard, provided NASA with the telemetry data systems from 1985 to 1994. TSI/Telsys, Inc. was then founded to commercialize the systems and began operations on October 1, 1995. The system aids the remote sensing industry by providing affordable and quick access to data collected from space.

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