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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region. This is because electron leakage increases with increases in current density.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices

Erbium doped Ga{sub 2}O{sub 3} thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga{sub 2}O{sub 3}:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga{sub 2}O{sub 3} contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga{sub 2}O{sub 3} as the host materials for Er{sup 3+} ions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral composition of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Interwell carrier transport in InGaN/(In)GaN multiple quantum wells

Uniform carrier distribution between quantum wells (QWs) of multiple QW light emitting diodes (LEDs) and laser diodes is important for the efficiency of device operation. In lasers, the uniform distribution ensures that all the QWs contribute to lasing; in LEDs, it enables high power operation with minimal Auger losses and a maximal efficiency. The carrier distribution between the QWs takes place via interwell (IW) transport. In polar GaN-based structures, the transport might be hindered by the strong carrier confinement and the internal electric fields. In this work, we study the IW transport in InGaN/(In)GaN multiple QW structures typical for ultraviolet-emitting devices with different well and barrier parameters. Experiments have been performed by means of time-resolved photoluminescence. We find that the IW transport rate is limited by the hole thermionic emission, which for InGaN/GaN QWs produces long transport times, ~1 ns per well, and a nonuniform IW carrier distribution. However, adding 5% In to the barriers completely changes the situation with the transport time decreasing by a factor of four and the hole thermionic emission energy from 200 meV to 70 meV. Finally, this study shows that using InGaN barriers is a promising pathway toward efficient high power InGaN LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys

InGaN light-emitting diodes (LEDs) are more efficient and cost effective than incandescent and fluorescent lighting, but lattice mismatch limits the thickness of InGaN layers that can be grown on GaN without performance-degrading dislocations. Here, we apply hybrid density functional theory calculations to investigate the thermodynamic stability, lattice parameters, and bandgaps of wurtzite and zincblende quaternary BInGaN alloys. We discover that the wurtzite phase is more stable and can be lattice matched to GaN for BInGaN compositions containing up to ~30% boron. The lattice match with GaN decreases strain and enables thicker active layers that mitigate Auger recombination and increase the efficiency of the LEDs. The bandgap of the alloy remains tunable throughout the visible spectrum. Our results indicate that BInGaN alloys are promising alternatives to InGaN for high-efficiency, high-power LEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Controlling the dopant profile for SRH suppression at low current densities in λ ≈ 1330 nm GaInAsP light-emitting diodes

The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley–Read–Hall recombination. To demonstrate this effect, we model, design, grow, fabricate, and test a GaInAsP LED (λ≈ 1330 nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional n + -n - p + double hetero-junction LED, the dopant profile near the n - p + hetero-structure of the design displaces the built-in electric field in such a way that the J 02 space charge recombination current is suppressed. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities.

42 ENGINEERING↗
DOE OSTI2023

Low-efficiency-droop c -plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the active region carrier density (n), causing the electrical efficiency droop onset to occur at low current densities. Here, we present an approach to reduce the internal electric fields (Eint) in c-plane QWs by placing doped p-type and n-type GaN barriers close to the QW. The reduced Eint also allows a thick QW active region design, which helps to lower n to further reduce the droop. The concept of using doped barriers to control Eint is explained using theory and device simulations. Following that, multiple series of thick single QW (SQW) LEDs were grown and characterized. Key parameters in the epitaxial design such as the doping levels and the relative position of the doped barriers were systematically studied and optimized. In conclusion, by using optimized doped barriers and a thick SQW, c-plane LEDs with a low-efficiency droop of 14% at 300 A/cm2 [with respect to the peak external quantum efficiency (EQE)] and a high peak EQE of 49% were demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of $(0001)$-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {$10\bar{1}1$}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼10 9 cm −2 ) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼10 8 cm −2 ). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, in this work, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Crystallographic defects↗
DOE OSTI2023

Package Performance Study: A Historical Perspective and Planning for a Path Forward

The topic of spent nuclear fuel (SNF) transportation often draws public attention and concerns regarding safety, and with large-scale shipping campaigns expected in the future, public interest is anticipated to substantially increase. In 1999, the U.S. Nuclear Regulatory Commission (NRC) began an initiative called the Package Performance Study (PPS) that initially focused on SNF transportation cask responses to severe transportation accidents. A public participation approach was to be used to help guide the scope and parameters of the study, which was also to consider using full-scale physical testing of a SNF transportation cask, where appropriate. In 2010, the NRC decided not to go forward with physical testing as proposed. In 2006, the National Academy of Sciences (NAS) conducted a study on SNF and high-level radioactive waste transportation in the United States. The NAS study recommended that full-scale cask testing, as well as other accepted methodologies, continue to be used as part of the package performance evaluation. In 2012, the Blue Ribbon Commission on America’s Nuclear Future (BRC) recommended conducting the PPS with a full-scale rail transportation cask for the purpose of building public trust and confidence in the safety of SNF transport. In 2021, the U.S. Department of Energy (DOE) restarted a consent-based siting process, focusing on how to site federal facilities for the interim consolidated storage of SNF using a consent-based approach. Large-scale SNF transportation would be necessary for any such interim storage facility. As the planning activities begin for future large-scale shipping campaigns, the DOE is considering options for conducting a DOE-led PPS to help build public trust and confidence in the transportation of SNF. Therefore, the DOE is gathering information related to the previous NRC-led PPS efforts, as well as applicable international experience with the testing of SNF packages. This paper discusses previous NRC efforts, as well as the current status of a DOE-led PPS, which is in the early planning stages.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2019

Luminaire dirt depreciation (LDD): Field data from several exterior lighting projects

Luminaire dirt depreciation (LDD) data were evaluated for seven luminaires from three different project sites in Philadelphia PA, Minneapolis MN, and Yuma AZ. In each case, the luminaires were removed from the installation, carefully packaged and transported to a photometric testing laboratory, and then tested in the “as-is” or dirty condition, cleaned, and re-tested. In terms of light output, the results showed that the IES RP-36-15 method for estimating LDD was applicable to the LED luminaires evaluated. General claims of lower levels of dirt deprecation (or higher LDD values) for LED luminaires than for luminaires using conventional light sources were not supported by the test data for the LED luminaires in these three projects. While the overall measured lumen depreciation due to accumulated dirt closely matched IES estimates for LDD, the data indicated that the accumulated dirt on the luminaires dramatically altered the luminous intensity distribution of the luminaires, with reductions in intensity of more than 25% at peak angles. These effects on luminous intensity distribution are not accounted for in IES LDD estimates.

Davis, Robert G.↗
DOE OSTI2021

Characterization of Silicon-Photomultipliers for a Cosmic Muon Veto detector

A Cosmic Muon Veto (CMV) detector using extruded scintillators is being designed around the mini-Iron Calorimeter detector at the transit campus of the India-based Neutrino Observatory, Madurai for measuring its efficiency at shallow depth underground experiments. The scintillation signal is transmitted through a Wavelength Shifting (WLS) fibre and readout by Hamamatsu Silicon-Photomultipliers (SiPMs). A Light Emitting Diode (LED) system is included on the front-end readout for in-situ calibration of the gain of each SiPM. A characterization system was developed for the measurement of gain and choice of the overvoltage (V ov ) of SiPMs using the LED as well as a cosmic muon telescope. The V ov is obtained by studying the noise rate, the gain of the SiPM, and the muon detection efficiency. In case of any malfunction of the LED system during the operation, the SiPM can also be calibrated with the noise data as well as using radioactive sources. Furthermore, this paper describes the basic characteristics of the SiPM and the comparison of the calibration results using all three methods, as well as the V ov of the SiPMs and muon selection criteria for the veto detector.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Evaluation of Atmospheric Conditions Leading to a Fumigation Event

During the afternoon of 30 January 2022, the Savannah River Site experienced unusual temperature conditions leading to a fumigation event that triggered safety alarms and caused considerable confusion about the cause of the event. Normally, it is assumed that fumigation events occur early in the day once surface heating has begun. While most fumigation events are related to the breakup of a nocturnal inversion, this event was related to synoptic atmospheric conditions, which provided a more unique scenario that led to the fumigation event. The unusual synoptic atmospheric conditions led to the downwash and fumigation of the elevated plume, causing a pollutant to mix rapidly to the surface. These conditions could have potentially harmed workers within the facility, since the plume was directed toward a building air intake system. Here, we seek to outline the conditions that led to this unusual fumigation event and provide results of two-dimensional (2D) wind modeling of the event to characterize these conditions for future operational guidance of the facility air intake systems. This work sets the groundwork for future high-resolution modeling to explore the mechanisms and thresholds affecting fumigation on the facility-specific short distance scales and improve forecasting of non-standard fumigation events to protect human health.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2017

Neutrinos in large extra dimensions and short-baseline ν e appearance

Here, we show that, in the presence of bulk masses, sterile neutrinos propagating in large extra dimensions (LED) can induce electron-neutrino appearance effects. This is in contrast to what happens in the standard LED scenario, and hence LED models with explicit bulk masses have the potential to address the MiniBooNE and LSND appearance results as well as the reactor and Gallium anomalies. A special feature in our scenario is that the mixing of the first Kaluza-Klein modes to active neutrinos can be suppressed, making the contribution of heavier sterile neutrinos to oscillations relatively more important. We study the implications of this neutrino mass generation mechanism for current and future neutrino oscillation experiments and show that the Short Baseline Neutrino Program at Fermilab will be able to efficiently probe such a scenario. In addition, this framework leads to massive Dirac neutrinos and thus precludes any signal in neutrinoless double beta decay experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

Potential-Induced Degradation of Cu(In,Ga)Se 2 Solar Cells: Alkali Metal Drift and Diffusion Effects

Potential-induced degradation (PID) of photovoltaic modules is due to transport of alkali metal ions (Na + ) from the soda-lime glass (SLG) into the semiconductors. For the most efficient polycrystalline absorbers, Na and K in the Cu(In,Ga)(Se,S) 2 (CIGS) absorber often benefit performance, so a more detailed mechanism for PID is needed. To that end, CIGS solar cells have been encapsulated, stressed with high voltage, and cored to extract the active regions for characterization. SLG substrates led to 14.9% efficiency on average, which reduced to 0% after 25 h of -1000 V bias. This was accompanied by increased Na in the CIGS layer, particularly at the buffer interface, as well as decreased carrier concentrations. On the other hand, borosilicate glass substrates with low Na and high K content led to 13.6% efficiency on average, which only reduced to 12.1% after 25 h of stress. This was accompanied by slightly increased K content in the CIGS layer. As K has led to recent world record efficiency CIGS devices, understanding Na and K similarities and differences may help to enhance initial efficiency and reduce PID.

14 SOLAR ENERGY↗
DOE OSTI2026

Feedback and Oscillations: Constructing Feedback Systems for Root Cause Analysis of Oscillations in Power Grids

Dynamic phenomena linked to inverter-based resources (IBRs) have gained global attention. Several IBR-induced dynamics have caused bulk power system-connected wind or solar power plants to trip, and some have even led to widespread outages. In addition, many oscillations have been observed involving IBR power plants. In 2023, the IEEE Power & Energy Society (PES) IBR Subsynchronous Oscillations (SSO) task force published a journal article, “Real-World Subsynchronous Oscillation Events in Power Grids With High Penetrations of Inverter-Based Resources,” in which 19 IBR oscillation events were examined for their causation. Earlier in 2020, another PES task force article, “Definition and Classification of Power System Stability-Revisited & Extended,” authored by prominent academics, introduced converter-driven stability as a new category of stability. The international power grid industry community also took action by publishing the CIGRE Green Book, Power System Dynamic Modelling and Analysis in Evolving Networks (led by Babak Badrzadeh and Zia Emin) in 2024. In August 2024, the Energy Systems Integration Group (ESIG) released a practical guide led by Nick Miller, “Diagnosis and Mitigation of Observed Oscillations in IBR-Dominant Power System: A Practical Guide.” The goal of the guide is to assist practicing engineers in making initial judgments and conducting detailed analyses about oscillations. Finally, when addressing the classification of stability and oscillations, the guide emphasizes a causality-based taxonomy for grouping, such as voltage control-induced oscillations, synchronization-induced oscillations, and frequency or active power control-induced oscillations.

Fan, Lingling [Univ. of South Florida, Tampa, FL (↗
DOE OSTI2021

Morphogene-assisted transformation of Sorghum bicolor allows more efficient genome editing

Sorghum bicolor (L.) Moench, the fifth most important cereal worldwide, is a multi-use crop for feed, food, forage and fuel. To enhance the sorghum and other important crop plants, establishing gene function is essential for their improvement. For sorghum, identifying genes associated with its notable abiotic stress tolerances requires a detailed molecular understanding of the genes associated with those traits. The limits of this knowledge became evident from our earlier in-depth sorghum transcriptome study showing that over 40% of its transcriptome had not been annotated. Here, we describe a full spectrum of tools to engineer, edit, annotate and characterize sorghum’s genes. Efforts to develop those tools began with a morphogene-assisted transformation (MAT) method that led to accelerated transformation times, nearly half the time required with classical callus-based, non-MAT approaches. These efforts also led to expanded numbers of amenable genotypes, including several not previously transformed or historically recalcitrant. Another transformation advance, termed altruistic, involved introducing a gene of interest in a separate Agrobacterium strain from the one with morphogenes, leading to plants with the gene of interest but without morphogenes. The MAT approach was also successfully used to edit a target exemplary gene, phytoene desaturase. To identify single-copy transformed plants, we adapted a high-throughput technique and also developed a novel method to determine transgene independent integration. These efforts led to an efficient method to determine gene function, expediting research in numerous genotypes of this widely grown, multi-use crop.

54 ENVIRONMENTAL SCIENCES↗