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At least 883 records · Page 49

Paramagnetic electronic structure of CrSBr: Comparison between ab initio G W theory and angle-resolved photoemission spectroscopy

Here, we explore the electronic structure of paramagnetic CrSBr by comparative first-principles calculations and angle-resolved photoemission spectroscopy. We theoretically approximate the paramagnetic phase using a supercell hosting spin configurations with broken long-range order and applying quasiparticle self-consistent GW theory, without and with the inclusion of excitonic vertex corrections to the screened Coulomb interaction (QS GW and QS $G\widehat{W}$, respectively). Comparing the quasiparticle band-structure calculations to angle-resolved photoemission data collected at 200 K results in excellent agreement. This allows us to qualitatively explain the significant broadening of some bands as arising from the broken magnetic long-range order and/or electronic dispersion perpendicular to the quasi-two-dimensional layers of the crystal structure. The experimental band gap at 200 K is found to be at least 1.51 eV at 200 K. At lower temperature, no photoemission data can be collected as a result of charging effects, pointing towards a significantly larger gap, which is consistent with the calculated band gap of approximately 2.1 eV.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic structure and magnetic properties of FeWO{sub 4} nanocrystals synthesized by the microwave-hydrothermal method

This communication reports that FeWO{sub 4} nanocrystals were successfully synthesized by the microwave-hydrothermal method at 443 K for 1 h. The structure and shape of these nanocrystals were characterized by X-ray diffraction, Rietveld refinement, and transmission electron microscopy. The experimental results and first principles calculations were combined to explain the electronic structure and magnetic properties. Experimental data were obtained by magnetization measurements for different applied magnetic fields. Theoretical calculations revealed that magnetic properties of FeWO{sub 4} nanocrystals can be assigned to two magnetic orderings with parallel or antiparallel spins in adjacent chains. These factors are crucial to understanding of competition between ferro- and antiferromagnetic behavior. Highlights: Black-Right-Pointing-Pointer Monophasic FeWO{sub 4} nanocrystals were synthesized by the microwave-hydrothermal method. Black-Right-Pointing-Pointer Rietveld refinement and clusters model for monoclinic structure Black-Right-Pointing-Pointer Magnetic properties of FeWO{sub 4} nanocrystals at different temperatures.

36 MATERIALS SCIENCE↗

The electronic structure and thermoelectric properties of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6}: First-principles calculations

The electronic structure and thermoelectric properties of MTl{sub 9}Te{sub 6} (M = Bi, Sb) were studied using density functional theory and the semiclassical Boltzmann theory. It is found that the band gaps of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6} are equal to 0.59 eV and 0.72 eV, respectively. The relative large band gap and strong coupling between Sb s and Te p are helpful to the thermoelectric properties of SbTl{sub 9}Te{sub 6}. Near the bottom of the conduction bands, the number of band valleys of SbTl{sub 9}Te{sub 6} is four and is larger than that of BiTl{sub 9}Te{sub 6} (two band valleys), which will increase its Seebeck coefficient. Although BiTl{sub 9}Te{sub 6} has a larger electrical conductivity relative to relaxation time (σ/τ) along the z-direction than that of SbTl{sub 9}Te{sub 6}, the results show that the transport properties of SbTl{sub 9}Te{sub 6} are better than those of BiTl{sub 9}Te{sub 6} possibly due to its large Seebeck coefficient. The maximum value of power factor relative to relaxation time (S{sup 2}σ/τ) for SbTl{sub 9}Te{sub 6} reaches 4.30 × 10{sup 11 }W/K{sup 2} m s at 900 K, that is, originated from its relatively large Seebeck coefficient, suggesting its promising thermoelectric performance at high temperature.

74 ATOMIC AND MOLECULAR PHYSICS↗

The electronic structure changes and the origin of the enhanced optical properties in N-doped anatase TiO{sub 2}—A theoretical revisit

We have investigated the electronic structure changes and the origin of the enhanced optical properties of N-doped anatase TiO{sub 2} using first-principles density-functional theory calculations. To determine the band gap variations induced by N-doping, we developed a new approach to locate the effective valence band maximum (VBM) by characterizing the degree of localization of the N-induced states in the band structures of various N-doped TiO{sub 2} systems. Our calculations show that the band gap variations are largely affected by the local bonding structures and doping concentration of the substitutional N atoms. As the N content is up to certain level, some local bonding structures can indeed cause band gap reduction due to the formation of band-like delocalized states above the VBM of TiO{sub 2}, while other local bonding configurations may simply form localized impurity states in the band gap. Accordingly, the N-induced localized and delocalized electronic states can exist simultaneously to contribute to the enhanced optical properties of anatase TiO{sub 2}. Our computational approach also provides a new way to investigate the band gap engineering of other wide band gap semiconductor material systems.

36 MATERIALS SCIENCE↗

Growth of PdCoO 2 films with controlled termination by molecular-beam epitaxy and determination of their electronic structure by angle-resolved photoemission spectroscopy

Utilizing the powerful combination of molecular-beam epitaxy (MBE) and angle-resolved photoemission spectroscopy (ARPES), we produce and study the effect of different terminating layers on the electronic structure of the metallic delafossite PdCoO 2 . Attempts to introduce unpaired electrons and synthesize new antiferromagnetic metals akin to the isostructural compound PdCrO 2 have been made by replacing cobalt with iron in PdCoO 2 films grown by MBE. Using ARPES, we observe similar bulk bands in these PdCoO 2 films with Pd-, CoO 2 -, and FeO 2 -termination. Nevertheless, Pd- and CoO 2 -terminated films show a reduced intensity of surface states. Additionally, we are able to epitaxially stabilize PdFe x Co 1– x O 2 films that show an anomaly in the derivative of the electrical resistance with respect to temperature at 20 K, but do not display pronounced magnetic order.

36 MATERIALS SCIENCE↗

First-principles study of structural, electronic and thermodynamic properties of EuMg{sub 2} and EuMg{sub 2}H{sub 6}

Within framework of the density functional theory, the structural and electronic properties of EuMg{sub 2} and its hydride EuMg{sub 2}H{sub 6} have been investigated. The calculated structural parameters are in good agreement with the experimental results, and the obtained formation enthalpies indicate that the stability of EuMg{sub 2} is lower than that of EuMg{sub 2}H{sub 6}. The calculated electronic structures show that both compounds exhibit a strong spin polarization feature near the Fermi level owing to the localized Eu-f electrons, and the EuMg{sub 2}H{sub 6} demonstrates mainly ionic characteristic. For thermodynamics of hydrogenation/dehydrogenation process of this system, the calculated reaction enthalpies along possible five reaction routes show that the most possible hydrogenation pathway is EuMg{sub 2}+3H{sub 2}{yields}EuMg{sub 2}H{sub 6}, while the favorable dehydrogenation pathway is EuMg{sub 2}H{sub 6}{yields}EuH{sub 2}+2Mg+2H{sub 2}. - The charge difference distribution (e/Bohr{sup 3}) (a) on (1010) plane of EuMg{sub 2}, (b) on (110) and (c) (020) planes of its hydride EuMg{sub 2}H{sub 6}. Highlights: Black-Right-Pointing-Pointer The Eu-f electron has important effects on stability and hydrogen storage behavior. Black-Right-Pointing-Pointer The hydride exhibits primary ionic characteristics. Black-Right-Pointing-Pointer Three types of Mg--H bonding display also obvious ionic feature with some covalence. Black-Right-Pointing-Pointer The dehydrogenation temperature of EuMg{sub 2}H{sub 6} is further determined.

36 MATERIALS SCIENCE↗

Electronic structure of Al-doped ZnO transparent conductive thin films studied by x-ray absorption and emission spectroscopies

This study used O K-, Zn L{sub 3}-, Zn K-, and Al K-edges x-ray absorption near-edge structure (XANES) and O K-edge x-ray emission spectroscopy (XES) measurements to investigate the electronic structure of transparent Al-doped ZnO (AZO) thin film conductors. The samples were prepared on glass substrates at a low temperature near 77 K by using a standard RF sputtering method. High-purity Ne (5N) was used as the sputtering gas. The crystallography of AZO thin films gradually transformed from the ZnO wurtize structure to an amorphous structure during sample deposition, which suggests the suitability to grow on flexible substrates, eliminating the severe degradation due to fragmentation by repeated bending. The O K- and Zn L{sub 3}-edges XANES spectra of AZO thin films revealed a decrease in the number of both O 2p and Zn 3d unoccupied states when the pressure of Ne was increased from 5 to 100 mTorr. In contrast, Al K-edges XANES spectra showed that the number of unoccupied states of Al 3p increased in conjunction with the pressure of Ne, indicating an electron transfer from Al to O atoms, and suggesting that Al doping increases the negative effective charge of oxygen ions. XES and XANES spectra of O 2p states at the O K-edge also revealed that Al doping not only raised the conduction-band-minimum, but also increased the valence-band-maximum and the band-gap. The results indicate that the reduction in conductivity of AZO thin films is due to the generation of ionic characters, the increase in band-gap, and the decrease in density of unoccupied states of oxygen.

36 MATERIALS SCIENCE↗

Diverse and tunable electronic structures of single-layer metal phosphorus trichalcogenides for photocatalytic water splitting

The family of bulk metal phosphorus trichalcogenides (APX{sub 3}, A = M{sup II}, M{sub 0.5}{sup I}M{sub 0.5}{sup III}; X = S, Se; M{sup I}, M{sup II}, and M{sup III} represent Group-I, Group-II, and Group-III metals, respectively) has attracted great attentions because such materials not only own magnetic and ferroelectric properties, but also exhibit excellent properties in hydrogen storage and lithium battery because of the layered structures. Many layered materials have been exfoliated into two-dimensional (2D) materials, and they show distinct electronic properties compared with their bulks. Here we present a systematical study of single-layer metal phosphorus trichalcogenides by density functional theory calculations. The results show that the single layer metal phosphorus trichalcogenides have very low formation energies, which indicates that the exfoliation of single layer APX{sub 3} should not be difficult. The family of single layer metal phosphorus trichalcogenides exhibits a large range of band gaps from 1.77 to 3.94 eV, and the electronic structures are greatly affected by the metal or the chalcogenide atoms. The calculated band edges of metal phosphorus trichalcogenides further reveal that single-layer ZnPSe{sub 3}, CdPSe{sub 3}, Ag{sub 0.5}Sc{sub 0.5}PSe{sub 3}, and Ag{sub 0.5}In{sub 0.5}PX{sub 3} (X = S and Se) have both suitable band gaps for visible-light driving and sufficient over-potentials for water splitting. More fascinatingly, single-layer Ag{sub 0.5}Sc{sub 0.5}PSe{sub 3} is a direct band gap semiconductor, and the calculated optical absorption further convinces that such materials own outstanding properties for light absorption. Such results demonstrate that the single layer metal phosphorus trichalcogenides own high stability, versatile electronic properties, and high optical absorption, thus such materials have great chances to be high efficient photocatalysts for water-splitting.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Performance of Heterostructural TaC/AlGaN Schottky Diodes Based on First Principles Electronic Structure Properties

Advances in ultra-wide bandgap materials, such as high Al-content AlxGa1-xN (AlGaN), are essential for next generation power electronics, but the requirement for lattice matched substrates is currently a significant obstacle. Recently, conductive TaC has emerged as a promising virtual substrate for AlGaN heteroepitaxy, with wurtzite (0001) AlxGa1-xN lattice-matched to rocksalt (111) TaC at x ~ 0.5. Thus, understanding and controlling the electronic properties of the TaC/AlGaN interface is key for developing technological applications based on TaC/AlGaN devices. Using density functional theory and electronic structure calculations, we here investigate TaC/Al0.5Ga0.5N interfaces, where we include explicit alloy models in the slab calculations. We predict the Schottky barrier height and the electric field discontinuity resulting from interface charges. Considering all possible combinations of (Ta, C) substrate termination, (Al/Ga, N) nucleation, and (Al/Ga, N) polarity, we construct a chemical potential phase diagram to identify the stable interfaces that can be accessed through variation of the synthesis conditions. The predicted interface electronic properties are implemented in device performance simulations to demonstrate a practical design for a strain-free, high-efficiency TaC/AlGaN Schottky diode with a low barrier height and without interface charges, underscoring the potential of TaC as a substrate for ultra-wide bandgap devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Micro-wrinkling and delamination-induced buckling of stretchable electronic structures

This paper presents the results of experimental and theoretical/computational micro-wrinkles and buckling on the surfaces of stretchable poly-dimethylsiloxane (PDMS) coated with nano-scale Gold (Au) layers. The wrinkles and buckles are formed by the unloading of pre-stretched PDMS/Au structure after the evaporation of nano-scale Au layers. They are then characterized using atomic force microscopy and scanning electron microscopy. The critical stresses required for wrinkling and buckling are analyzed using analytical models. The possible interfacial cracking that can occur along with film buckling is also studied using finite element simulations of the interfacial crack growth. The implications of the results are discussed for potential applications of micro-wrinkles and micro-buckles in stretchable electronic structures and biomedical devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

First principles study on electronic structure and elastic properties of LaCd and LaHg

Full -potential linearized augmented plane wave method (FP- LAPW) has been used for the comparative study of electronic structure and elastic properties of CsCl-type LaCd and LaHg intermetallic compounds using generalized gradient approximation (GGA). The density of states at the Fermi Level, N (E{sub F}), is found to be 0.06 and 3.03 states/eV for LaCd and LaHg respectively. We report elastic constants for these compounds for the first time. The ductility/brittleness of these compounds has been analyzed using Pugh rule and Cauchy’s pressure.

36 MATERIALS SCIENCE↗

Complex Dirac-like Electronic Structure in Atomic Site-Ordered Rh 3 In 3.4 Ge 3.6

We report the synthesis via an indium flux method of a novel single-crystalline compound Rh 3 In 3.4 Ge 3.6 that belongs to the cubic Ir 3 Ge 7 structure type. In Rh 3 In 3.4 Ge 3.6 , the In and Ge atoms preferentially occupy, respectively, the 12d and 16f sites of the Im3¯m space group, thus creating a colored variant of the Ir 3 Ge 7 structure. Like the other compounds of the Ir 3 Ge 7 family, Rh 3 In 3.4 Ge 3.6 shows potential as a thermoelectric, displaying a relatively large power factor, PF ~ 2 mW/cm K 2 , at a temperature T ~ 225 K, albeit showing a modest figure of merit, ZT = 8 x 10 -4 , because of the lack of a finite band gap. These figures might improve through a use of chemical substitution strategies to achieve band gap opening. Remarkably, electronic band structure calculations reveal that this compound displays a complex Dirac-like electronic structure relatively close to the Fermi level. The electronic structure is composed of several Dirac type-I and type-II nodes, and even Dirac type-III nodes that result from the touching between a flat band and a linearly dispersing band. Here, this rich Dirac-like electronic dispersion suggests the possibility to observe experimentally Dirac type-III nodes and study their role in the physical properties of Rh 3 In 3.4 Ge 3.6 and related Ir 3 Ge 7 -type materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Resonant inelastic X-ray scattering determination of the electronic structure of oxyhemoglobin and its model complex

Hemoglobin and myoglobin are oxygen-binding proteins with S = 0 heme {FeO 2 } 8 active sites. The electronic structure of these sites has been the subject of much debate. This study uses Fe K-edge X-ray absorption spectroscopy (XAS) and 1s2p resonant inelastic X-ray scattering (RIXS) to study oxyhemoglobin and a related heme {FeO 2 } 8 model compound, [(pfp)Fe(1-MeIm)(O 2 )] (pfp = meso-tetra(α,α,α,α- o -pivalamido-phenyl)porphyrin, or TpivPP, 1-MeIm = 1-methylimidazole) (pfpO 2 ), which was previously analyzed using L-edge XAS. The K-edge XAS and RIXS data of pfpO 2 and oxyhemoglobin are compared with the data for low-spin Fe II and Fe III [Fe(tpp)(Im) 2 ] 0/+ (tpp = tetra-phenyl porphyrin) compounds, which serve as heme references. The X-ray data demonstrate that pfpO 2 is similar to Fe II , while oxyhemoglobin is qualitatively similar to Fe III , but with significant quantitative differences. Density-functional theory (DFT) calculations show that the cjontrast between pfpO 2 and oxyhemoglobin is due to a distal histidine H bond to O 2 and the less hydrophobic environment in the protein, which lead to more backbonding into the O 2 . A valence bond configuration interaction multiplet model is used to analyze the RIXS data and show that pfpO 2 is dominantly Fe II with 6–8% Fe III character, while oxyhemoglobin has a very mixed wave function that has 50–77% Fe III character and a partially polarized Fe–O 2 π-bond.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electronic structure and anomalous Hall effect in the ferromagnetic 3d-5d superlattice SrMnO3/SrIrO3

The electronic structure and the anomalous Hall effect (AHE) at the recently grown 3 d - 5 d superlattice structure (SrMnO 3 ) 1 / (SrIrO 3 ) 1 are investigated theoretically using model and density-functional calculations. The observed ferromagnetism for the SMO layer, which becomes electron doped because of the charge transfer across the interface, is explained to be due to the Anderson-Hasegawa double exchange, while the SIO side becomes ferromagnetic due to the proximity effect and the Nagaoka physics of a hole-doped system. The broken time-reversal symmetry and the strong spin-orbit coupling in SIO provide the two essential ingredients for the AHE, which we describe within a square lattice model of d-orbitals relevant for the present structure. The model correctly predicts the order of magnitude of the anomalous Hall conductivity (AHC), which is computed using the Kubo formula. The density-functional results for the AHC are in good agreement with the experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic structure of rare-earth chromium antimonides RECrSb{sub 3} (RE=La-Nd, Sm, Gd-Dy, Yb) by X-ray photoelectron spectroscopy

The electronic structure of the ternary rare-earth chromium antimonides RECrSb{sub 3} (RE=La-Nd, Sm, Gd-Dy, Yb) has been examined by high-resolution X-ray photoelectron spectroscopy (XPS) for the first time. The RE 3d or 4d core-line spectra are substantially complicated by the presence of satellite peaks but their general resemblance to those of RE{sub 2}O{sub 3} tends to support the presence of trivalent RE atoms in RECrSb{sub 3}. However, the Yb 4d spectrum of YbCrSb{sub 3} also shows peaks that are characteristic of divalent ytterbium. The Cr 2p core-line spectra exhibit asymmetric lineshapes and little change in binding energy (BE) relative to Cr metal, providing strong evidence for electronic delocalization. The Sb 3d core-line spectra reveal slightly negative BE shifts relative to elemental antimony, supporting the presence of anionic Sb species in RECrSb{sub 3}. The experimental valence band spectrum of LaCrSb{sub 3} matches well with the calculated density of states, and it can be fitted to component peaks belonging to individual atoms to yield an average formulation that agrees well with expectations ('La{sup 3+}Cr{sup 3+}(Sb{sup 2-}){sub 3}'). On progressing from LaCrSb{sub 3} to NdCrSb{sub 3}, the 4f-band in the valence band spectra grows in intensity and shifts to higher BE. The valence band spectrum for YbCrSb{sub 3} also supports the presence of divalent ytterbium. - Graphical Abstract: In their valence band spectra, the 4f-band intensifies and shifts to higher BE on progressing from LaCrSb{sub 3} to NdCrSb{sub 3}. Highlights: Black-Right-Pointing-Pointer High-resolution core-line and valence band XPS spectra were measured for RECrSb{sub 3}. Black-Right-Pointing-Pointer Divalent Yb is present in YbCrSb{sub 3}, in contrast to trivalent RE in other members. Black-Right-Pointing-Pointer Asymmetric Cr 2p spectral lineshape confirms delocalization of Cr valence electrons. Black-Right-Pointing-Pointer Small negative Sb 3d BE shifts support assignment of anionic Sb atoms. Black-Right-Pointing-Pointer Fitted valence band spectra show shifts in the 4f band as RE is changed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electronic Structure, Elastic, Magnetic, and Optical Properties of Fe{sub 2}MnZ (Z = Si, Ge, and Sn) Full Heusler Alloys: First-Principle Calculations

Investigations of the electronic structure, elastic, magnetic, and optical properties of Fe{sub 2}MnZ (Z = Si, Ge, and Sn) full Heusler alloys show mechanical stability with cubic symmetry in all three alloys. They are elastically anisotropic and Fe{sub 2}MnSi is ductile whereas Fe{sub 2}MnGe and Fe{sub 2}MnSn are brittle in nature. The value of total magnetic moment is 3 μ{sub B} for Fe{sub 2}MnSi and Fe{sub 2}MnGe at their equilibrium lattice constants and follows the Slater–Pauling curve. Fe{sub 2}MnSn possess the largest magnetic moment among the three with a value of 5.73 μ{sub B} at equilibrium lattice constant. Fe{sub 2}MnSi shows half-metallic nature with 100% spin polarization for a wide range of lattice parameters and is useful for spintronics devices. Good optical properties over wide photon energies point to the possible use of these alloys as radiation shielding materials, optical filters, and photo-electronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic Structure, Spectroscopy and Correlation Effects in Novel Materials

This project was targeted on electronic structure, spectroscopic studies, and correlation effects in a variety of novel materials of great current interest. Spectroscopies resolved highly in momentum, energy or spatial dimensions are playing a key role in unraveling the nature of the ground state and excitation properties in wide classes of novel materials. The seminal insights thus obtained are of critical importance not only for answering some of the fundamental questions facing condensed matter physics and materials science today, but also for understanding and thus helping to design and develop new materials with desirable properties, which will continue to be the key to the survival of mankind and its energy needs as a technological society long into the future. However, spectroscopies do not provide a direct map of electronic states, but act as a very complex ‘filter’ or ‘mapping’ of the underlying spectrum. This connection between the electronic states and measured spectra—called the ‘matrix element effect’—is in general an extremely complex function of the phase space of the experiment (e.g. energy/polarization of photons in photoemission), presenting both a challenge and an opportunity. So motivated, this project pursued techniques for realistic treatment of electronic spectra of a wide variety of materials, which served as a prelude to formulating and implementing methodologies for making direct connection with various spectroscopies such as ARPES, STS/STM, and inelastic light scattering. Specific systems are topological materials, including 2D ultrathin films beyond graphene, novel superconductors, and nanocrystals, among others. Our goal was to exploit the strengths of various spectroscopies to piece together the most complete picture of electronic states in systems of current interest, enabling direct and sharpened confrontations with theoretical models, and also to help advance the reach of various spectroscopies.

36 MATERIALS SCIENCE↗

Electronic Structure and Quadrupole Interactions in Promising Cathode Materials Na{sub x}M{sub y}(MoO{sub 4}){sub 3}, M = Mn, Fe, Co, and Ni

The electronic structure and the magnetic properties of molybdates Na{sub x}M{sub y}(MoO{sub 4}){sub 3} (M = Mn, Fe, Co, and Ni) which are promising materials for sodium batteries have been studied in the framework of the density functional theory with the GGA and GGA+U approximations for the first time. The calculations show that all the compounds are insulators. An important role of the correlation effects, provided by the on-site Coulomb interactions, was established in the formation of the band gap in these compounds. The quadrupole constants of {sup 23}Na nuclei are calculated in the nonmagnetic and ferromagnetic states within the GGA and GGA+U approaches. It is shown that the quadrupole frequencies for nonequivalent crystallographic positions of sodium are in different frequency ranges, which allows to study the diffusion of sodium in these compounds by the Nuclear Magnetic Resonance method.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗