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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Pattern classification using charge transfer devices

The feasibility of using charge transfer devices in the classification of multispectral imagery was investigated by evaluating particular devices to determine their suitability in matrix multiplication subsystem of a pattern classifier and by designing a protype of such a system. Particular attention was given to analog-analog correlator devices which consist of two tapped delay lines, chip multipliers, and a summed output. The design for the classifier and a printed circuit layout for the analog boards were completed and the boards were fabricated. A test j:g for the board was built and checkout was begun.

Source record↗
NASA NTRS1979

Charge injection device as a candidate sensor for stellar tracking

Charge transfer devices (CTDs) are superior to the image dissector as stellar tracking sensors, considering their low voltage requirements, insensitivity to magnetic fields, good linearity, and low weight and power. An analysis of one type of CTD, called the charge injection device (CID), revealed an X-Y addressing capability which provides exceptional flexibility in array readout and results in enhanced S/N capability, a surface channel device which produces a larger dynamic range of operation, and exceptional and unique tolerance to optical overloads. A 128 row by 128 column CID array processed on silicon was evaluated in a cooled breadboard camera, and measured results indicate projected performance parameters of a large area CID array as follows: 20 micron square sensing site, noise not greater than 25 carriers per pixel, quantum yield of approximately 40% from 0.4 to 1.0 micron, and cooling requirements on the order of 0 degrees C.

Jones, C. S., Jr.↗
NASA NTRS1979

Monolithic InSb imaging arrays with charge-coupled device /CCD/ readout

The paper demonstrates the detection of infrared radiation and signal readout on a monolithic InSb charge coupled infrared imaging device. The device is a 20-element linear imager with MOS detectors coupled to a four-phase, surface-channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for zero input and charge readout. Sensitivity measurements on the MOS infrared detectors were determined for the 20-element array. Data are presented on the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both multiplexed and a time delay and integration (TDI) mode. Plans are discussed for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager.

Miller, W. E.↗
NASA NTRS1980

A new planar injection-gated bulk switching device based upon deep impurity trapping

Under the proper conditions, double-injection (DI) diodes with partially compensated deep impurities will exhibit 'S'-type switching characteristics similar to conventional silicon-controlled rectifiers (SCR's). A practical injection-gating scheme has been achieved for the first time in a planar configuration to control the switching behavior of these devices, marked by extreme sensitivity of the gate over a range of switching voltages. An experiment to demonstrate the feasibility of these devices for practical application is described. Finally, a phenomenological explanation is presented for the gate-controlled switching of these devices.

Kapoor, A. K.↗
NASA NTRS1981

Description of a digital computer simulation of an Annular Momentum Control Device (AMCD) laboratory test model

A description of a digital computer simulation of an Annular Momentum Control Device (AMCD) laboratory model is presented. The AMCD is a momentum exchange device which is under development as an advanced control effector for spacecraft attitude control systems. The digital computer simulation of this device incorporates the following models: six degree of freedom rigid body dynamics; rim warp; controller dynamics; nonlinear distributed element axial bearings; as well as power driver and power supply current limits. An annotated FORTRAN IV source code listing of the computer program is included.

Woolley, C. T.↗
NASA NTRS1981

Test of charge injection device, phase 1

A computer-controlled automatic facility containing two interactive microprocessors, peripherals, and an optical bench was used to obtain device characteristics for use in evaluating CID's as the sensor element in a prospective star tracker application. Each of the ST-256 chips tested contains a 256 x 256 pixel element array with 65536 picture elements. Two ST-256 devices were tested at 20 C under light levels of 10%, 0.1%, and 0.01% saturation, and in darkness. The saturation level was established at 0.95 microwatts sq cm as measured by the radiometeric sensor. Two test runs under each condition were performed for each chip. Two complete sets of data for each of the devices were thus obtained. A separate data field was used to store the results of each test condition. Repetitive runs of a test condition were stored sequentially in the same file. Examination of the data using print-outs is shown in examples.

Gradinger, A.↗
NASA NTRS1981

Silicon superlattices: Theory and application to semiconductor devices

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Moriarty, J. A.↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 1

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

Price, W. E.↗
NASA NTRS1981

Design and development of integral heat pipe/thermal energy storage devices

The major design and performance test subtasks in the development of small (200 to 1,000 whr) integral heat pipe/thermal energy storage devices for use with thermally driven spacecraft cryo-coolers are described. The design of the integral heat pipe/thermal energy storage device was based on a quasi steady resistance heat transfer, lumped capacitance model. Design considerations for the heat pipe and thermal storage annuli are presented. The thermomechanical stress and insulation system design for the device are reviewed. Experimental correlations are described, as are the plans for the further development of the concept.

Mahefkey, E. T.↗
NASA NTRS1982

Experimental study of delta wing leading-edge devices for drag reduction at high lift

The drag reduction devices selected for evaluation were the fence, slot, pylon-type vortex generator, and sharp leading-edge extension. These devices were tested on a 60 degree flatplate delta (with blunt leading edges) in the Langley Research Center 7- by 10-foot high-speed tunnel at low speed and to angles of attack of 28 degrees. Balance and static pressure measurements were taken. The results indicate that all the devices had significant drag reduction capability and improved longitudinal stability while a slight loss of lift and increased cruise drag occurred.

Johnson, T. D., Jr.↗
NASA NTRS1981

Cosmic ray induced errors in I2L microprocessors and logic devices

Large-scale integrated (LSI) devices fabricated with integrated injection logic (I2L) were studied by both heavy ion experiments and device analysis to determine the upset threshold, the charge collection volumes and ultimately the probability for upset in the galactic cosmic ray spectrum. The devices studied, the SEP9900A, the SBP9989 and the P-Code generator were fabricated by Texas Instruments, Inc.

Price, W. E.↗
NASA NTRS1982

The obstacle block as a device to measure turbulent skin friction in compressible flow

The obstacle block, developed as an alternative to the Preston tube for indirectly measuring skin friction on smooth surfaces in incompressible flows, is examined as a device for compressible flows as well. The block, which is congruent with a surface static pressure orifice, has a geometry which is easily specified and thus has a universal calibration. Data from two independent studies are used to establish such a calibration using 'wall' variables, valid for Mach numbers up to about 3. Various aspects concerning practical application of the device are examined, such as sensitivity to yaw and the minimum permissible axial spacing between blocks. Several examples showing the utility of the device are given.

Elfstrom, G. M.↗
NASA NTRS1984

The Effect of Cosmic Rays on MSI Devices

Low-power devices susceptible to cosmic-ray particles. Five MSI device technologies, including TTL, low power TTL, Schottky, CMOS, and low-power Schottky, subjected to 120-MeV krypton-ion beam from cyclotron and monitored for single-event upset. Results find terrestrial application for radiation hardening of electronic devices and systems.

Nichols, D. K.↗
NASA NTRS1984

Radiation-Hardness Data For Semiconductor Devices

Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

Price, W. E.↗
NASA NTRS1982

The phototron: A light to RF energy conversion device

The phototron, a photoelectric device that converts light to radio frequency energy, is described. It is a vacuum tube, free electron, device that is mechanically similar to a reflex klystron with the hot filament cathode replaced by a large area photocathode. The device can operate either with an external voltage source used to accelerate the photoelectrons or with zero bias voltage; in which case the photokinetic energy of the electrons sustains the R.F. oscillations in the tuned R.F. circuit. One basic design of the phototron was tested. Frequencies as high as about 1 GHz and an overall efficiency of about 1% in the biased mode were obtained. In the unbiased mode, the frequencies of operation and efficiences are considerably lower. Success with test model suggests that considerable improvements are possible through design refinements. One such design refinement is the reduction of the length of the electron flight path.

Freeman, J. W.↗
NASA NTRS1982

Subsonic balance and pressure investigation of a 60 deg delta wing with leading edge devices

Low supersonic wave drag makes the thin highly swept delta wing the logical choice for use on aircraft designed for supersonic cruise. However, the high-lift maneuver capability of the aircraft is limited by severe induced-drag penalties attributed to loss of potential flow leading-edge suction. This drag increase may be alleviated through leading-edge flow control to recover lost aerodynamic thrust through either retention of attached leading-edge flow to higher angles of attack or exploitation of the increased suction potential of separation-induced vortex flow. A low-speed wind-tunnel investigation was undertaken to examine the high-lift devices such as fences, chordwise slots, pylon vortex generators, leading-edge vortex flaps, and sharp leading-edge extensions. The devices were tested individually and in combinations in an attempt to improve high-alpha drag performance with a minimum of low-alpha drag penalty. This report presents an analysis of the force, moment, and static pressure data obtained in angles of attack up to 23 deg, at Mach and Reynolds numbers of 0.16 and 3.85 x 10 to the 6th power per meter, respectively. The results indicate that all the devices produced drag and longitudinal/lateral stability improvements at high lift with, in most cases, minor drag penalties at low angles of attack.

Tingas, S. A.↗
NASA NTRS1983

Orthotic devices using lightweight composite materials

Potential applications of high strength, lightweight composite technology in the orthotic field were studied. Several devices were designed and fabricated using graphite-epoxy composite technology. Devices included shoe plates, assistive walker devices, and a Simes prosthesis reinforcement. Several other projects having medical application were investigated and evaluations were made of the potential for use of composite technology. A seat assembly was fabricated using sandwich construction techniques for the Total Wheelchair Project.

Harrison, E., Jr.↗
NASA NTRS1982

The damage equivalence of electrons, protons, and gamma rays in MOS devices

The results of laboratory tests to determine the radiation damage effects induced on MOS devices from Co-60, electron, and proton radiation are reported. The tests are performed to establish the relationship between the Co-60 gamma rays and the level of damage to the MOS devices in regards to different damages which can be expected with the electron and particle bombardments experienced in space applications. CMOS devices were exposed to the Co-60 gamma rays, 1 MeV electrons, and 1 MeV protons while operating at 3, 10, and 15 V. The test data indicated that the Co-60 source was reliable for an initial evaluation of the electron damages up to 2 MeV charge. A correction factor was devised for transferring the Co-60 measurements to proton damages, independent of bias and transistor types, for any orbit or environment.

Brucker, G. J.↗