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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 883 records · Page 49
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

A comparative genomics approach identifies contact-dependent growth inhibition as a virulence determinant

Emerging evidence suggests the Pseudomonas aeruginosa accessory genome is enriched with uncharacterized virulence genes. Identification and characterization of such genes may reveal novel pathogenic mechanisms used by particularly virulent isolates. In this work, we utilized a mouse bacteremia model to quantify the virulence of 100 individual P. aeruginosa bloodstream isolates and performed whole-genome sequencing to identify accessory genomic elements correlated with increased bacterial virulence. From this work, we identified a specific contact-dependent growth inhibition (CDI) system enriched among highly virulent P. aeruginosa isolates. CDI systems contain a large exoprotein (CdiA) with a C-terminal toxin (CT) domain that can vary between different isolates within a species. Prior work has revealed that delivery of a CdiA-CT domain upon direct cell-to-cell contact can inhibit replication of a susceptible target bacterium. Aside from mediating interbacterial competition, we observed our virulence-associated CdiA-CT domain to promote toxicity against mammalian cells in culture and lethality during mouse bacteremia. Structural and functional studies revealed this CdiA-CT domain to have in vitro tRNase activity, and mutations that abrogated this tRNAse activity in vitro also attenuated virulence. Furthermore, CdiA contributed to virulence in mice even in the absence of contact-dependent signaling. Overall, our findings indicate that this P. aeruginosa CDI system functions as both an interbacterial inhibition system and a bacterial virulence factor against a mammalian host. These findings provide an impetus for continued studies into the complex role of CDI systems in P. aeruginosa pathogenesis.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2015

Equation of state and contact of a strongly interacting Bose gas in the normal state

Here, we theoretically investigate the equation of state and Tan's contact of a nondegenerate three-dimensional Bose gas near a broad Feshbach resonance, within the framework of large-N expansion. Our results agree with the path-integral Monte Carlo simulations in the weak-coupling limit and recover the second-order virial expansion predictions at strong interactions and high temperatures. At resonance, we find that the chemical potential and energy are significantly enhanced by the strong repulsion, while the entropy does not change significantly. With increasing temperature, the two-body contact initially increases and then decreases like T –1 at large temperature, and therefore exhibits a peak structure at about 4T c0 , where T c0 is the Bose-Einstein condensation temperature of an ideal, noninteracting Bose gas. These results may be experimentally examined with a nondegenerate unitary Bose gas, where the three-body recombination rate is substantially reduced. In particular, the nonmonotonic temperature dependence of the two-body contact could be inferred from the momentum distribution measurement.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Landauer Formula for a Superconducting Quantum Point Contact

We generalize the Landauer formula to describe the dissipative electron transport through a superconducting point contact. The finite-temperature, linear-in-bias, dissipative dc conductance is expressed in terms of the phase- and energy-dependent scattering matrix of the Bogoliubov quasiparticles in the quantum point contact. Here, the derived formula is also applicable to hybrid superconducting-normal structures and normal contacts, where it agrees with the known limits of Andreev reflection and normal-state conductance, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells

This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.

14 SOLAR ENERGY↗
DOE OSTI2025

High-Throughput In-Line Deposition of Silicon Oxide for Polycrystalline Silicon Passivating Contacts

Polycrystalline silicon passivating contacts rely on an ultrathin (1–2 nm) silicon oxide layer to minimize recombination at the wafer/oxide interface and regulate dopant diffusion. Traditionally formed by thermal or chemical oxidation, this oxide is herein replaced by silicon oxide deposited via aerosol impact-driven assembly (AIDA), enabling high wafer-per-hour throughput and precise thickness control. In this study, we show that AIDA coatings conformally cover planar or textured substrates and achieve a SiO x /poly-Si(n) structure with an implied open-circuit voltage (iV oc = 726 mV) and contact saturation current density (J 0 = 8.8 fA/cm 2 ). Furthermore, annealing AIDA SiO x films at elevated temperatures desorbs hydroxyl groups while the stoichiometry transitions toward SiO 2 , improving passivation quality. Together, these results highlight AIDA’s potential for scalable, high-throughput manufacturing of advanced passivating contacts, offering a cost-effective alternative to conventional low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition-based silicon and oxide processes.

TOPcon↗
DOE OSTI2015

Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 <; 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

14 SOLAR ENERGY↗
DOE OSTI2020

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

Poly-Si/SiO 2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm 2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

14 SOLAR ENERGY↗
DOE OSTI2021

Modeling and Understanding of Rear Junction Double-Side Passivated Contact Solar Cells with Selective Area TOPCon on Front

Device modeling is performed to propose > 25% efficient industry-compatible rear junction double-side passivated contacts solar cell structure with full area p-TOPCon on the rear and selective area n-TOPCon under the front grid pattern (selective TOPCon). Here, this design enables the use of thicker TOPCon (>100nm) on the front for traditional screen-printed contacts without incurring metal-induced damage, high parasitic absorption loss, and compromise in lateral transport or carrier collection on the front. Rear junction design with appropriate bulk lifetime and resistivity combination eliminate the need for heavy doping in the front field region because carriers can flow through the bulk Si without appreciable FF loss. High VOC is maintained because high-quality Si surface passivation in the field region by Al 2 O 3 /SiN gives J 0 comparable to the TOPCon. Our device modeling specifies the practically achievable properties and parameters for each region, including full area rear p-TOPCon, selective area front n-TOPCon, bulk and contacts, to achieve 25.4% efficiency screen-printed bifacial rear junction selective TOPCon cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Alternative Rear Contacts for Ultrathin CdSexTe1-x Solar Cells

The back contact is a key component for further developments of CdSeTe solar cells. In this contribution, we investigate several materials and designs that could help the development of highly-reflective, ohmic back contacts for conventional (3.45 um) and thin (800 nm) CdSeTe solar cells. We also explore numerically, nanostructured metal back contacts for light-trapping in ultrathin (200 nm) CdTe solar cells.

back contact↗
DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV Voc Si Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the loss analysis of silicon solar cells with polysilicon on locally-etched dielectric passivating contacts with Voc=729.0 mV and efficiency=22.6% has been presented. Experimentally, nano-pinholes were introduced in SiO x (2.2 nm) and SiO x /SiN y (2.2 nm/8nm) stack using metal-assisted chemical etching (MACE). SunSolve and Quokka3 were used to simulate the experimental solar cell and investigate the optical and electrical power losses. Simulations suggest maximum power loss occurs due to recombination and resistive losses in the bulk (~0.76 mW/cm2) followed by power loss due to rear contact recombination (~0.35 mW/cm2). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and hence, efficiency has been investigated. Further, advanced structures have been proposed to minimize recombination and parasitic absorption to achieve higher Voc and Jsc of the solar cells with locally-etched dielectric passivating contacts.

contacts↗
DOE OSTI2017

The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures

Degradation of nonalloyed ohmic contacts with heavily doped GaN epitaxially grown to the heterostructures with two-dimensional electron gas has been investigated. The change in the relative contact resistivity at temperatures of up to 600°C for the Ti/Pd/Au, Cr/Au, and Cr/Pd/Au metallization compositions has been studied. It is demonstrated that the Cr/Pd/Au metallization composition, the resistivity of which decreases at working temperatures of 400°C, is the most resistant to the effect of temperature. It is shown for the first time that the largest contribution to the increase in the contact resistivity to two-dimensional electron gas upon heating above 400°C is made by the resistivity of the Cr/Pd/Au–n{sup +}-GaN metal–dielectric structure, while, at temperatures of 400°C and higher, the resistance between heavily doped GaN and two-dimensional electron gas decreases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Ohmic Contacts to Europium Oxide for Spintronic Devices

A technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage curve and a contact resistance of 0.55 Ω mm and are stable in air. This suggests that the proposed technique holds promise for spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

BISON Contact Algorithm Improvements in Support of Pellet Cladding Mechanical Interaction Modeling

The thermal and mechanical behavior of the gap between the fuel and cladding plays an extremely important role in determining the response of light water reactor (LWR) fuel under irradiation. This is especially true during situations when pellet-cladding mechanical interactions (PCMI) have a significant effect on the behavior of the fuel/cladding system. The BISON code, which is being used as the fuel performance simulation tool for the CASL program, employs contact detection and enforcement algorithms to realistically simulate the thermal and mechanical interactions across the fuel/cladding interaction in LWR fuel. These contact algorithms permit accurate representation of these interactions even when there is significant relative movement between the two surfaces, which is typically the case in many regions of an LWR fuel rod. This report summarizes work done during the 2017 fiscal year to further improve the accuracy and robustness of the contact enforcement algorithms in BISON. This work will benefit all BISON simulations, but will particularly benefit simulations scenarios where PCMI is of interest.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Microdroplet Electrospray Localized Laser Printing and Sintering of Nanoparticles for Passivating, Carrier-Selective Contacts (Final Technical Report)

In this project, the team used a nanoparticle electrospray laser deposition (NELD) process developed at the University of Central Florida (UCF) to address current limitations of passivating, carrier-selective contact technologies for crystalline silicon (c-Si) photovoltaic (PV) cells. The NELD process was used to print low bulk line resistivity Ag contacts directly onto transparent conductive oxides (TCOs), like indium tin oxide (ITO), for hydrogenated amorphous silicon (a-Si:H) based c-Si heterojunction (SHJ) cells without any subsequent contact firing step needed.

14 SOLAR ENERGY↗
DOE OSTI2015

Automatic Classification of Protein Structure Using the Maximum Contact Map Overlap Metric

In this paper, we propose a new distance measure for comparing two protein structures based on their contact map representations. We show that our novel measure, which we refer to as the maximum contact map overlap (max-CMO) metric, satisfies all properties of a metric on the space of protein representations. Having a metric in that space allows one to avoid pairwise comparisons on the entire database and, thus, to significantly accelerate exploring the protein space compared to no-metric spaces. We show on a gold standard superfamily classification benchmark set of 6759 proteins that our exact k-nearest neighbor (k-NN) scheme classifies up to 224 out of 236 queries correctly and on a larger, extended version of the benchmark with 60; 850 additional structures, up to 1361 out of 1369 queries. Finally, our k-NN classification thus provides a promising approach for the automatic classification of protein structures based on flexible contact map overlap alignments.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2022

Explanation and Application of the Evolving Contact Traction Fields in Shallow Foundation Systems

The present paper provides a qualitative discussion of the evolution of contact traction fields beneath rigid shallow foundations resting on granular materials. A phenomenological similarity is recognized in the measured contact traction fields of rigid footings and at the bases of sandpiles. This observation leads to the hypothesis that the stress distributions are brought about by the same physical phenomena, namely the development of arching effects through force chains and mobilized intergranular friction. A set of semi-empirical equations are suggested for the normal and tangential components of this contact traction based on past experimental measurements and phenomenological assumptions of frictional behaviors at the foundation system scale. These equations are then applied to the prescribed boundary conditions for the analysis of the settlement, resistance, and stress fields in supporting granular materials beneath the footing. A parametric sensitivity study is performed on the proposed modelling method, highlighting solutions to the boundary-value problems in an isotropic, homogeneous elastic half-space.

42 ENGINEERING↗
NASA NTRSDate not supplied

Finite Element Contact Analysis and Redesign of Rotorcraft Planetary Gear Sets With Asymmetric Profiles

This article explores the use of asymmetric gear teeth for rotorcraft main rotor planetary gearsets. Two baseline designs having symmetric gear teeth were selected for redesign studies. Finite element-based contact analyses were used to compare designs. Bending stress predictions for the two existing baseline designs were compared to strain gage measurements to confirm the suitability of the modeling. The same modeling method is then used to assess design changes to improve the bending stress and contact pressure magnitudes using asymmetric tooth profiles. For the first redesign study, the selected gearset is mildly asymmetric, with a 4° difference in pressure angles between the two sides of a tooth. For the second redesign study, the selected gearset is strongly asymmetric with a 18° difference in pressure angles. The results demonstrate that the asymmetric tooth approach provides additional design flexibility toward balancing the contact stresses and bending stresses of the sun, planet, and ring members.

gear↗
DOE OSTI2014

Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

14 SOLAR ENERGY↗