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At least 883 records · Page 49

Design and performance evaluation of a dual-circuit thermal energy storage module for air conditioners

We present experimental results and a validated numerical model of a dual-circuit phase-change thermal energy storage module for air conditioners. The module incorporates a phase-change material encapsulated in compressed expanded natural graphite foam. We used n-tetradecane as the PCM with a transition temperature (~4.5 °C) suitable for air-conditioning applications. Heat exchange to and from the module is accomplished through two fluid loops operating as a heat source and sink embedded inside multiple slabs of the composite material. This dual-circuit design enables easier integration with air-conditioning equipment and provides enhanced flexibility in system operation as compared to the state-of-the-art thermal storage systems. When integrated with an air-conditioner, this design will enable peak-load shaving and enhances operational efficiency. The thermal storage device was designed for a nominal storage capacity of ~ 3.5 kWh. We evaluated the heat transfer and energy storage performance of this device using standalone heat transfer experiments to estimate key thermal resistances and identify design improvements before integration with an air conditioner. The numerical model of the heat exchanger uses a combination of discretized and lumped parameter approaches to maintain a balance between accuracy and computational expense. Our analyses show that the geometric features and integration of fluid tubes are key contributors to the thermal contact resistance between the fluid and the thermal storage material, and consequently, to the overall performance of the thermal storage module. Our standalone experiments also identified important operating scenarios in which this thermal storage module can be used for air-conditioning in buildings.

25 ENERGY STORAGE↗

Parameterization of generic positive sequence models to represent behavior of inverter based resources in low short circuit scenarios

The connection of large inverter based resources (IBR) in transmission systems is often located geographically and electrically far away from load centers. This, coupled with the displacement of synchronous machine plants, results in a reduction of the network short circuit strength at the point of connection. Under these conditions, state-of-the-art positive sequence simulation platforms and models can have difficulties maintaining numerical stability and/or providing an accurate representation of IBR plant dynamic behavior. As a result, computationally heavy time domain electromagnetic transient (EMT) simulations may be required to evaluate these systems. In this paper, a recently developed improved generic positive sequence model is parameterized to provide a representation of IBR behavior in low short circuit networks. Further, comparisons against generic and detailed EMT models demonstrate the suitability of the improved positive sequence model to study practical stability issues experienced with presently in-service plants. Such a model can provide some of the accuracy of an EMT representation with a much lower computational burden. The performance of the positive sequence model is validated against the behavior shown by both open white box and closed black box EMT domain models from around the world.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Trapezoidal grid fingers to reduce shadowing loss and improve short circuit current

Traditional metallic contacts on solar cells can cover a substantial portion of the device area, resulting in shadowing of light that diminishes the amount of current collected. In this paper, we developed trapezoidal electron-beam evaporated Ti/Al front grid fingers on GaAs single-junction solar cells to decrease the optical shadowing and increase the photogenerated current. Here, we observe a high fill factor of 87% at 1-Sun light intensity and we observe no degradation on the open-circuit voltage. The short-circuit current density is found to increase by 0.4 mA/cm 2 when compared to previously demonstrated electroplated Ni/Au front grid fingers, resulting in an efficiency improvement of ~0.8% absolute.

14 SOLAR ENERGY↗

Evaluation of a recycling process for printed circuit board by physical separation and heat treatment

Highlights: • The parts mounted on printed circuit board (PCB) were liberated by underwater explosion and mechanical crushing. • The crushed PCB without surface-mounted parts was carbonized under inert atmosphere at 873 K to recover copper. • The multi-layered ceramic capacitors including nickel was carbonized at 873 K to recover nickel by the magnetic separation. • The tantalum powders were recovered from the molded resins by heat treatment at 723 and 823 K in air atmosphere and screening. • Energy and treatment cost of new process increased, however, the environmental burden decreased comparing conventional one. - Abstract: Printed circuit boards (PCBs) from discarded personal computer (PC) and hard disk drive were crushed by explosion in water or mechanical comminution in order to disintegrate the attached parts. More parts were stripped from PCB of PC, composed of epoxy resin; than from PCB of household appliance, composed of phenol resin. In an attempt to raise the copper grade of PCB by removing other components, a carbonization treatment was investigated. The crushed PCB without surface-mounted parts was carbonized under a nitrogen atmosphere at 873–1073 K. After screening, the char was classified by size into oversized pieces, undersized pieces and powder. The copper foil and glass fiber pieces were liberated and collected in undersized fraction. The copper foil was liberated easily from glass fiber by stamping treatment. As one of the mounted parts, the multi-layered ceramic capacitors (MLCCs), which contain nickel, were carbonized at 873 K. The magnetic separation is carried out at a lower magnetic field strength of 0.1 T and then at 0.8 T. In the +0.5 mm size fraction the nickel grade in magnetic product was increased from 0.16% to 6.7% and the nickel recovery is 74%. The other useful mounted parts are tantalum capacitors. The tantalum capacitors were collected from mounted parts. The tantalum-sintered bodies were separated from molded resins by heat treatment at 723–773 K in air atmosphere and screening of 0.5 mm. Silica was removed and 70% of tantalum grade was obtained after more than 823 K heating and separation. Next, the evaluation of Cu recycling in PCB is estimated. Energy consumption of new process increased and the treatment cost becomes 3 times higher comparing the conventional process, while the environmental burden of new process decreased comparing conventional process. The nickel recovery process in fine ground particles increased energy and energy cost comparing those of the conventional process. However, the environmental burden decreased than the conventional one. The process for recovering tantalum used more heat for the treatment and therefore the energy consumption increased by 50%, when comparing with conventional process. However, the market price for tantalum is very large; the profit for tantalum recovery is added. Also the environmental burden decreased by the recycling of tantalum recovery. Therefore, the tantalum recovery is very important step in the PCB recycling. If there is no tantalum, the consumed energy and treatment cost increase in the new process, though the environmental burden decreases.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

iPSC-derived neurons profiling reveals GABAergic circuit disruption and acetylated α-tubulin defect which improves after iHDAC6 treatment in Rett syndrome

Highlights: • Development of a patient-specific neuronal model for Rett syndrome using iPSCs. • GABAergic circuits up-regulation in Rett iPSC-derived neurons. • Reduction of acetylated α-tubulin in Rett neurons, reverted by selective HDAC6 inhibitors. Mutations in MECP2 gene have been identified in more than 95% of patients with classic Rett syndrome, one of the most common neurodevelopmental disorders in females. Taking advantage of the breakthrough technology of genetic reprogramming, we investigated transcriptome changes in neurons differentiated from induced Pluripotent Stem Cells (iPSCs) derived from patients with different mutations. Profiling by RNA-seq in terminally differentiated neurons revealed a prominent GABAergic circuit disruption along with a perturbation of cytoskeleton dynamics. In particular, in mutated neurons we identified a significant decrease of acetylated α-tubulin which can be reverted by treatment with selective inhibitors of HDAC6, the main α-tubulin deacetylase. These findings contribute to shed light on Rett pathogenic mechanisms and provide hints for the treatment of Rett-associated epileptic behavior as well as for the definition of new therapeutic strategies for Rett syndrome.

60 APPLIED LIFE SCIENCES↗

Open Circuit Potential of a Au Catalyst during Selective Oxidation of Glycerol

It has been of great interest to understand relationships between the potential of a metal catalyst and its thermochemical catalytic activity, especially in an aqueous phase environment. In the literature, there are correlations of open circuit potential with reaction rates or surface concentrations of reaction intermediates. In this study, we measured the open circuit potential (OCP) of a Au gauze during selective oxidation of glycerol to glyceric acid and hydrogen peroxide in a basic solution, as a function of hydroxide and alcoholate concentrations. It is found that applying a potential to the Au catalyst has no influence on the reaction rate. Although a rough correlation appears to exist between OCP and reaction rate, the data are better fit to an equation which assumes that the potential of the metal (i.e. the OCP) is in equilibrium with the electrochemical potential of the solution, which is defined by the thermodynamic activities of the oxidizing and reducing species. The equation: OCP = constant + Σ ox [(RT/FZ ox )ln[Ox]] - Σ red [(RT/FZ red )ln[Red]] implicitly assumes that the Au metal functions as a probing electrode. It is further found that this equation also applies to the Au-catalyzed H 2 O 2 oxidation/decomposition reaction in a basic medium, and possibly to formic acid dehydrogenation. Here, we postulate that the apparent correlation between OCP and reaction rate is due to the fact that the reaction rate is proportional to the concentrations of the reaction products and/or reactants that define the electrochemical potential of the solution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Overcoming Short-Circuit in Lead-Free CH 3 NH 3 SnI 3 Perovskite Solar Cells via Kinetically Controlled Gas–Solid Reaction Film Fabrication Process

The development of Sn-based perovskite solar cells has been challenging because devices often show short-circuit behavior due to poor morphologies and undesired electrical properties of the thin films. A low-temperature vapor-assisted solution process (LT-VASP) has been employed as a novel kinetically controlled gas–solid reaction film fabrication method to prepare lead-free CH 3 NH 3 SnI 3 thin films. We show that the solid SnI 2 substrate temperature is the key parameter in achieving perovskite films with high surface coverage and excellent uniformity. The resulting high-quality CH 3 NH 3 SnI 3 films allow the successful fabrication of solar cells with drastically improved reproducibility, reaching an efficiency of 1.86%. Furthermore, our Kelvin probe studies show the VASP films have a doping level lower than that of films prepared from the conventional one-step method, effectively lowering the film conductivity. Above all, with (LT)-VASP, the short-circuit behavior often obtained from the conventional one-step-fabricated Sn-based perovskite devices has been overcome. Finally, this study facilitates the path to more successful Sn-perovskite photovoltaic research.

14 SOLAR ENERGY↗

Photoelectrode Durability in Two- versus Three-Electrode Configurations: Understanding the Impact of Circuit Configuration on Water-Splitting Stability

Device durability remains a significant challenge in photoelectrochemical (PEC) water splitting under ambient conditions. Yet, a lack of understanding of the test configuration and applied bias effects continue to hinder progress. In this study, we differentiate two-electrode (2E) and three-electrode (3E) configurations for evaluating PEC material durability, focusing particularly on their impacts on photoabsorber solid-state operating conditions. Our results underscore the fallacy of inferring 2E device stability from durability measurements performed solely in 3E configurations. Unmeasured and often misunderstood total circuit bias in 3E tests moderates material degradation, leading to the overestimation of photoelectrode stability compared to short-circuit operation. We demonstrate how the photoabsorber's operating voltage critically governs charge separation, surface stability, and degradation mechanisms during PEC operation. With these findings, we propose a standardized framework for conducting more reliable 3E durability experiments that simulate unassisted performance to help accelerate the development of robust, stable materials for solar-driven water splitting.

08 HYDROGEN↗

Molecular Engineering for Large Open-Circuit Voltage and Low Energy Loss in Around 10% Non-fullerene Organic Photovoltaics

Recent efforts in organic photovoltaics (OPVs) have been devoted to obtaining low-bandgap non-fullerene acceptors (NFAs) for high photocurrent generation. However, the low-lying lowest unoccupied molecular orbital (LUMO) level in narrow bandgap NFAs typically results in a small energy difference (Δ E DA ) between the LUMO of the acceptor and the highest occupied molecular orbital (HOMO) of the donor, leading to low open-circuit voltage (V OC ). The trade-off between Δ E DA and photocurrent generation significantly limits the simultaneous enhancement of both V OC and short-circuit current density ( J SC ). Here, we report a new medium-bandgap NFA, IDTT-T, containing a weakly electron-withdrawing N-ethyl thiabarbituric acid terminal group on each end of the indacenodithienothiophene (IDTT) core. When paired with a benchmark low-bandgap PTB7-th polymer donor, simultaneous enhancement of both Δ E DA and absorption spectral coverage was realized. The OPV devices yield a V OC of 1.01 V, corresponding to a low energy loss of 0.57 eV in around 10% efficiency single-junction NFA OPVs. In conclusion, the design demonstrates a working principle to concurrently increase Δ E DA and photocurrent generation for high V OC and PCE in bulk fullerene-free heterojunction OPVs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls

Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation.

42 ENGINEERING↗

Random access quantum information processors using multimode circuit quantum electrodynamics

Qubit connectivity is an important property of a quantum processor, with an ideal processor having random access—the ability of arbitrary qubit pairs to interact directly. This a challenge with superconducting circuits, as state-of-the-art architectures rely on only nearest-neighbor coupling. Here, we implement a random access superconducting quantum information processor, demonstrating universal operations on a nine-qubit memory, with a Josephson junction transmon circuit serving as the central processor. The quantum memory uses the eigenmodes of a linear array of coupled superconducting resonators. We selectively stimulate vacuum Rabi oscillations between the transmon and individual eigenmodes through parametric flux modulation of the transmon frequency. Utilizing these oscillations, we perform a universal set of quantum gates on 38 arbitrary pairs of modes and prepare multimode entangled states, all using only two control lines. We thus achieve hardware-efficient random access multi-qubit control in an architecture compatible with long-lived microwave cavity-based quantum memories.

97 MATHEMATICS AND COMPUTING↗

Conductivity and lithiophilicity gradients guide lithium deposition to mitigate short circuits

Lithium metal anodes hold great promise to enable high-energy battery systems. However, lithium dendrites at the interface between anode and separator pose risks of short circuits and fire, impeding the safe application. In contrast to conventional approaches of suppressing dendrites, here we show a deposition-regulating strategy by electrically passivating the top of a porous nickel scaffold and chemically activating the bottom of the scaffold to form conductivity/lithiophilicity gradients, whereby lithium is guided to deposit preferentially at the bottom of the anode, safely away from the separator. The resulting lithium anodes significantly reduce the probability of dendrite-induced short circuits. Crucially, excellent properties are also demonstrated at extremely high capacity (up to 40 mAh cm –2 ), high current density, and/or low temperatures (down to –15 °C), which readily induce dendrite shorts in particular. This facile and viable deposition-regulating strategy provides an approach to preferentially deposit lithium in safer positions, enabling a promising anode for next-generation lithium batteries.

25 ENERGY STORAGE↗

Effects of open circuit immersion and vertex potential on potentiodynamic polarization scans of metallic biomaterials

Abstract Electrodes made of commercially pure titanium (CP-Ti) and a CoCrMo alloy are immersed at an open circuit in a phosphate buffer saline electrolyte at room temperature for different durations prior to electrochemical analyses. Open circuit potential measurements, electrochemical impedance spectroscopy measurements, and cyclic potentiodynamic polarization (CPP) scans are used to assess the impact of the immersion time on derived property values. Stable passivation layers formed on both materials during immersion. The corrosion potentials determined from the anodic legs of CPP scans become more cathodic, and the corrosion currents decrease to lower values after longer immersion times. Measured currents indicate the layers formed on CP-Ti stabilize during forward anodic scans and persist to the vertex potential, whereas passivation breakdown occurs during anodic scans with CoCrMo with active corrosion at voltages up to the vertex potential. The characteristics of the return cathodic legs of CPP scans represent the surface conditions at the vertex potential: characteristic corrosion property values derived from the test responses represent passive surfaces on CP-Ti and leached surfaces on CoCrMo rather than intrinsic properties of those materials.

36 MATERIALS SCIENCE↗

Evaporated tellurium thin films for p-type field-effect transistors and circuits

There is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. In this paper, we report the realization of tellurium thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors. We achieve an effective hole mobility of ~35 cm 2 V –1 s –1 , on/off current ratio of ~10 4 and subthreshold swing of 108 mV dec –1 on an 8-nm-thick film. High-performance tellurium p-type field-effect transistors are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, three-dimensional circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.

42 ENGINEERING↗

High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

Abstract Recent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

47 OTHER INSTRUMENTATION↗

Mitigating coherent loss in superconducting circuits using molecular self-assembled monolayers

In planar superconducting circuits, decoherence due to materials imperfections, especially two-level-system (TLS) defects at different interfaces, is a primary hurdle for advancing quantum computing and sensing applications. Traditional methods for mitigating TLS loss, such as etching oxide layers at metal and substrate interfaces, have proven to be inadequate due to the persistent challenge of oxide regrowth. In this work, we introduce a novel approach that employs molecular self-assembled monolayers (SAMs) to chemically bind at different interfaces of superconducting circuits. This technique is specifically tested here on coplanar waveguide (CPW) resonators, in which this method not only impedes oxide regrowth after surface etching but can also tailors the dielectric properties at different resonators interfaces. The deployment of SAMs results in a consistent improvement in the measured quality factors across multiple resonators, surpassing those with only oxide-etched resonators. The efficiency of our approach is supported by microwave measurements of multiple devices conducted at millikelvin temperatures and correlated with detailed X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) characterizations of SAM-passivated resonators. The compatibility of SAMs materials with the established fabrication techniques offers a promising route to improve the performance of superconducting quantum devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Delay-resolved spectroscopy in terahertz photonic circuits

Photonic integrated circuits incorporating intersubband transitions are ideal for mid-infrared and terahertz nanophotonics. However, the design of epitaxies has long been inhibited by two factors: the modest predictivity of ab initio theory and the absence of absolute intersubband gain and loss measurements under operating conditions. Existing measurements either yield inaccurate gain profiles or do not accurately assess dependence on frequency, bias, and temperature. Here, we present a delay-resolved absolute-referencing method for accurate gain evaluation without these limitations, addressing a long-standing challenge. By creating a photonic circuit that allows broadband pulses to traverse different lengths of a gain medium, we measure the absolute transmission of intersubband structures. Gain profiles match theoretical predictions at lower temperatures, with gain and dispersion clamping after lasing, and faster-than-expected degradation occurs at higher temperatures. Our approach provides a precise experimental evaluation of temperature-dependent gain performance and gives insight into optimizing temperature performance and frequency comb designs.

Optical spectroscopy↗

‘Soft’ amplifier circuits based on field-effect ionic transistors

Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and can be integrated as a component in larger circuits. By means of Nernst–Planck numerical simulations as well as an analytical description of the steady-state current we find that the responses of the system to various input voltages can be categorized into ohmic, sub-threshold, and active modes. This is fully analogous to what is known for the electronic field-effect transistor (FET). Pivotal FET properties such as the threshold voltage and the transconductance crucially depend on the half-cell redox potentials of the source and drain electrodes as well as on the polyelectrolyte charge density and the gate material work function. We confirm the analogy with the electronic FETs through numerical simulations of elementary amplifier circuits in which we successfully substitute the electronic transistor by an ionic transistor.

42 ENGINEERING↗