The INFN R&D: New pixel detector for the High Luminosity upgrade of the LHC
The High Luminosity upgrade of the CERN-LHC (HL-LHC) demands for a new high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 10 16 particles/cm 2 at ~3 cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler-FBK, is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100 μm and 130 μm active thickness for planar sensors, and 130 μm for 3D sensors, the thinnest ones ever produced so far. The first prototypes of hybrid modules bump-bonded to the present CMS and ATLAS readout chips have been tested in beam tests. Furthermore, the preliminary results on their performance before and after irradiation are presented.