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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Accident event progression, gaps, and key performance indicators for steam generator tube rupture events in water-cooled SMRs: A review

According to historical records of reactor-related incidents, a steam generator tube rupture (SGTR) is one of the most common occurrences at operating pressurized water reactors (PWRs). Such design-basis accidents (DBAs) could lead to a direct path for radionuclides to be released to the atmosphere via the safety and relief valves, making assessments of radionuclide discharge from operating nuclear power plants (NPPs) into the environment crucial for ensuring safety. In such analyses, the primary focus has been on the extent of radioactive release, not the potential damage to the core. Moreover, significant and timely intervention by operators is needed during the initial stages of SGTRs in order to avert overfilling of the SGs, as well as to restrict the dissemination of radioactive materials. Determining the event sequence and phases that occur during an SGTR incident in an advanced passive (e.g., AP1000) water-cooled nuclear reactor is crucial for implementing effective passive safety systems (PSSs) for a specific water-cooled small modular reactor (SMR) design. Here this study provides a comprehensive review of the accident event progression, associated physical phenomena, knowledge gaps, and key performance indicators that must be evaluated and assessed in thermal-hydraulics models, based on relevant test data, respectively.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2020

Controlling the corrosion resistance of multi-principal element alloys

Multi-principal element alloys (MPEAs) offer the possibility of many degrees of freedom in the choice of alloying elements to produce either single phase solid solutions or more complex multiphase microstructures. Large ranges of material properties have been observed for MPEAs and mastery of the selection of elements and their compositions can enable novel combinations of properties not possible in traditional alloys. From the aqueous corrosion perspective, optimization of phase stability, control of heterogeneities, passive film identity and its protectiveness, as well as substrate properties such as metal-metal bond strength and activation energy associated with dissolution, can all be controlling factors governed by alloy composition and structure. These factors can mediate the electrochemical reactions controlling spontaneous corrosion. The quest for superior properties based on well-informed element choice is suggested as a path forward guiding MPEA formulations for corrosion performance. However, gaps in fundamental knowledge exist regarding (a) the specific functions of each element, (b) the behavior of elements in unusual combinations, and (c) the formation of complex protective oxides. These issues currently hold back progress in optimization of corrosion properties.

Scully, John R.↗
DOE OSTI2024

Ambient energy for buildings: Beyond energy efficiency

The following Key Messages comprise the salient findings of this study: 1. Ambient energy (from sun, air, ground, and sky) can heat and cool buildings; provide hot water, ventilation and daylighting; dry clothes; and cook food. These services account for about three-quarters of building energy consumption and a third of total US demand. Biophilic design (direct and indirect connections with nature) is an intrinsic adjunct to ambient energy systems, and improves wellness and human performance. 2. The current strategy of electrification and energy efficiency for buildings will not meet our climate goals, because the transition to an all-renewable electric grid is too slow. Widespread adoption of ambient energy is needed. Solar-heated buildings also flatten the seasonal demand for electricity compared to all-electric buildings, reducing required production capacity and long-term energy storage. In addition, ambient-conditioned buildings improve resilience by remaining livable during power outages. 3. National policies, incentives, and marketing should be enacted to promote ambient energy use. Federal administrative priorities should reflect the importance of ambient energy for buildings. Use of ambient energy should be encouraged through existing and new building codes and standards. 4. Ambient energy system design tools are needed for architects, engineers, builders, building scientists, realtors, appraisers, and consumers. PVWatts is used over 100 million times per year for photovoltaic system design. A similar, simple, and accessible tool for ambient design is crucial. 5. Training on ambient energy is needed throughout secondary, post-secondary, and continuing education for workforce development. Currently, only about 10% of colleges teach courses on passive heating and cooling systems. 6. Ambient-conditioned buildings should be demonstrated in all US climate zones. Performance should be monitored and reported, with quantitative case studies made widely available. 7. While current technology is sufficient to build high-performance ambient buildings now, research is needed to develop new technologies to harness ambient energy more effectively and more economically. Such advancements will facilitate adoption of ambient energy technologies in a wider range of buildings, including retrofits. Examples include windows with much lower thermal losses, use of the building shell as thermal storage, alternative light-weight thermal storage systems, sky radiation cooling systems, automated controls for solar gains and passive cooling, and ground coupling.

14 SOLAR ENERGY↗
DOE OSTI2023

Understanding the origin of Tabula Rasa-induced defects in n-type Cz c-Si: The case of nitrogen atmosphere

Phosphorus-doped Czochralski-grown silicon (Cz-Si) has been gaining market share in the large-scale manufacturing of high-efficiency silicon (Si)-based photovoltaic (PV) devices thanks to higher carrier lifetimes than their boron-doped counterpart. However, the fabrication of n-type Cz-Si based solar cells often requires process steps with much higher temperatures and longer times than p-type Silicon. Defect interaction with the high temperatures during such processes tend to be detrimental to the n-type Cz-Si carrier lifetime, therefore limiting the final device efficiency. Short thermal anneals before cell processing, known as Tabula Rasa (TR), have been proposed to mitigate the thermally induced lifetime degradation during n-type Cz-Si solar cell fabrication. This work thoroughly investigates the defects responsible for the lifetime degradation after TR in a N 2 atmosphere treatment. We use temperature-injection-dependent lifetime spectroscopy and the thickness variation method to decouple the effects of TR treatment in the bulk and the surface of the n-type Cz-Si wafers. Using the defect parameter contour mapping (DPCM), we identify the defect energy level (E t ) and the capture cross-section ratio (k) of the most likely process-induced defect, which aligns with previously proposed Si vacancy-associated defects. The DPCM reveals that these vacancy-associated defects have a shallow energy level E t - E v ~0.13 eV and very efficient electron capture cross section k~600. Unexpectedly, the bulk degradation due to vacancy defects in the volume of the wafer, is accompanied by a significant increase in the surface recombination as well. Through evaluating the surface recombination velocity temperature- and injection dependence, we show that after TR, at room temperature and for an injection level of 10 15 cm -3 , in a wafer passivated with a-Si:H(i) the surface recombination dominates the overall lifetime response. Here we hypothesize that the near surface vacancy-associated bulk defects play a role in lowering the electron diffusion current into the a-Si:H(i) from the c-Si(n) reducing the field-effect passivation.

14 SOLAR ENERGY↗
DOE OSTI2024

Radiative cooling and thermoregulation in the earth’s glow

Efficient passive radiative cooling of buildings requires an unimpeded view of the sky. However, vertical facades of buildings mostly see terrestrial features that become broadband-radiative heat sources in the summer and heat sinks in the winter. The resulting summertime terrestrial heat gain by buildings negates or overwhelms their narrowband longwave infrared (LWIR) radiative cooling to space, while the wintertime terrestrial heat loss causes overcooling. We show that selective LWIR emitters on vertical building facades can exploit the differential transmittance of the atmosphere toward the sky and between terrestrial objects to achieve higher summertime cooling and wintertime heating than conventionally used broadband emitters. The impact of this novel and passive thermoregulation is comparable to that of painting dark roofs white and is achievable with both novel and commonplace materials. Our findings represent new and remarkable opportunities for materials design and untapped thermoregulation of entities ranging from buildings to human bodies.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2025

Role of Salt Concentration on Interphase Dynamics and Chemistry of Silicon Anodes during Electrochemical Cycling

We investigated the chemistry and structure of the solid electrolyte interphase (SEI) grown over a silicon anode as a function of the lithium salt concentration. In these experiments, in situ neutron reflectivity measurements were performed to measure the thickness and composition of the SEI formed from 1.0 and 5.5 M lithium bis(trifluoromethane)sulfonimide (LiTFSI) in standard ethylene carbonate:dimethyl carbonate electrolytes. These measurements reveal the formation of a 350+ Å thick SEI layer that is predominantly organic (∼80%) and dimensionally stable when using a 1.0 M salt solution. In contrast, increasing the salt concentration to 5.5 M resulted in an SEI that exhibited thickness changes from 100 to 375 Å and became up to 30% inorganic. In conclusion, these compositional and structural changes point to the role of salt speciation on the resulting passivation of silicon electrodes and indicate the need to form more organic-like passivation layers to promote the calendar life of silicon anodes.

Electrodes↗
DOE OSTI2026

Active site design enables industrial scale H 2 O 2 electrosynthesis with metal-free catalysts

The electrosynthesis of hydrogen peroxide (H 2 O 2 ) via a two-electron oxygen reduction reaction enables decentralized H 2 O 2 production. While metal-free carbon catalysts are sustainable and low-cost, their performance is hindered by poorly defined active sites and uncontrolled defect states. Here, we resolve these challenges through active site design and catalyst screening using fluorine (F) and nitrogen (N) codoped carbons as model materials. Statistical analysis combined with density functional theoretical calculations reveals that F-induced structural modification and defect passivation optimize OOH* binding, with F-doping and adjacent F atoms predominantly lowering abs ΔG(OOH*). Experimental results confirm that semi-ionic C–F bonds passivate defects in nitrogen-doped carbon, enhancing catalytic activity and durability. The resulting (N, F)-codoped carbon achieves nearly 100% H 2 O 2 selectivity at 0.5–0.65 V versus the reversible hydrogen electrode and maintains > 95% across 0.01–0.65 V versus the reversible hydrogen electrode. In an electrolyzer, (N, F)-codoped carbon exhibits an H 2 O 2 yield rate of 74.35 mol g cat. −1 h -1 and sustains 300 mA cm -2 for 105 hours with ~95% faradaic efficiency. Coupling the two-electron oxygen reduction reaction with methanol oxidation further reduces cell voltage and enhances productivity. This work provides a means to design efficient catalysts for industrial H 2 O 2 electrosynthesis.

H2O2 electrosynthesis↗
DOE OSTI2020

Enhancement of the ultraviolet photoluminescence of ZnO films: Coatings, annealing, and environmental exposure studies

To realize the many potential applications of ZnO films, it is vital to produce films with high optical quality that exhibit strong UV luminescence. By combining annealing at an optimal temperature followed by the deposition of a coating, one can achieve a significant enhancement of photoluminescence (PL). The effectiveness of the coating over time is a crucial point to be considered. Three types of coating materials were investigated: MgO, SiO 2 , and Al 2 O 3 . Due to its strong bond energy, MgO was found to be the most effective coating material for passivation of the surfaces of the ZnO films; SiO 2 was the second best. The UV-PL intensity of MgO coated ZnO was found to increase by a factor of 52 relative to an uncoated film. The effectiveness of the coatings exhibited a linear correlation with their bond energies and is discussed in terms of competing mechanisms to surface passivation such as the adsorption of OH-groups; these can act as surface traps and diminish the UV-PL intensity. Annealing at 900 °C prior to the deposition of the coating was found to be an important step in realizing the optimal performance of the coating due to the reduction of Zn interstitials accompanied by improved crystallinity. Exposure to the environment, up to 294 days, results in the degradation of the UV-PL of the MgO coated film; this effect was not observed for the film coated with SiO 2 . This effect is discussed in terms of the strong reactivity of MgO with environmental contaminants from the OH-groups.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Mechanisms for long carrier lifetime in Cd(Se)Te double heterostructures

II–VI semiconductors are used in numerous electro-optical applications. For example, CdTe-based solar technology is cost competitive with other electricity generation sources, yet there is still significant room to improve. Carrier lifetime has historically been well below the radiative recombination limit. Lifetimes reaching beyond 100 ns can significantly enhance performance and enable novel device structures. Here, double heterostructures (DHs) with passivated interfaces demonstrate lifetimes exceeding 1 µs, yet this appears only for CdSeTe and not for CdTe DHs. We compare the passivation mechanisms in CdTe and CdSeTe DHs. CdSeTe lifetimes on the order of 1 µs correspond to a combination of superior intragrain lifetime, extremely low grain boundary recombination and greater Te4+ interfacial presence compared to CdTe.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Controlling Pinhole Radius and Areal Density in a-Si/SiOx Using Metal-Assisted Chemical Etching

Polysilicon on silicon oxide (poly-Si/SiOx) passivating contacts with predominant charge-carrier transport via pinholes are currently prepared via a>1000 degrees C thermal step to induce oxide break-up. Herein, we develop the precursor of a pinhole-enabled poly-Si/SiOx contact utilizing room temperature metal-assisted chemical etching (MACE) to form pinholes in the SiOx. The pinholes were created via electroless Ag nanoparticle (Ag NP) deposition followed by the MACE of intrinsic amorphous hydrogenated silicon (a-Si:H) on SiOx, creating isolated mesopores through the film stack. By varying the MACE etching solution (HF:H2O2) concentration, we were able to vary the pinhole areal density over four orders of magnitude (104-107 cm-2). We observed the Ostwald ripening of the Ag NP to enable control over the pinhole radii. Our work demonstrates proof-of-concept for a-Si:H/SiOx with mesopores across the film stack, which may serve as precursor for the development of poly-Si/SiOx passivating contacts of both polarities.

MATERIALS SCIENCE,SOLAR ENERGY↗
DOE OSTI2025

Efficiency cliff in scaling InGaN light-emitting diodes down to submicron

The top-down submicron fabrication of blue-emitting light-emitting diodes on Qromis Substrate Technology substrates is reported. Light-emitting diodes with mesa sizes as small as 250 × 250 nm 2 show ideal forward voltage and low leakage current density. It is observed that sidewall treatment and passivation methods used in micro-light-emitting diodes (2–20 μ m) do not lead to the same level of sidewall recombination suppression for submicron ones (< 1 μ m), as evidenced by a ∼70% decrease in peak external quantum efficiencies when mesa sizes are scaled from 2 μ m down to 250 nm. This is attributed to the lateral carrier diffusion being comparable to the mesa size, regardless of the sidewall passivation and recovery. The results call for rethinking the impact of sidewalls in emerging top-down fabricated (sub)micrometer-light-emitting diodes.

42 ENGINEERING↗
DOE OSTI2025

InAs sidewall tunnel diodes enabled by surface states

Negative differential resistance (NDR), where the device current decreases with increasing bias voltage, is a representative phenomenon where quantum mechanics induces counterintuitive physical behavior and offers promising applications such as high-frequency oscillators, amplifiers, and multilevel logic circuits. While the NDR behavior has been extensively studied in various materials and devices, the role of surface properties in NDR, particularly in InAs-based diodes, remains underexplored. In this work, we report the observation of NDR in vertically structured InAs p + n diodes that exhibit a peak-valley current ratio of ∼6, which is suitably high for applications. Circumference-normalized current–voltage characterization revealed that the NDR originates from band-to-band tunneling between the valence band of p + -InAs and the conduction band of an n + -InAs surface, where the n + surface is due to surface states on otherwise n − -InAs. In addition, by comparing devices with various surface passivation methods (without intentional passivation, benzocyclobutene polymer, and silicon nitride), we found that the surface termination significantly affects the NDR characteristics. We present an equivalent circuit model to explain the observed device behavior. These findings offer insights into surface-enabled NDR phenomena and present new knobs for engineering NDR devices.

Circuit theorems↗
DOE OSTI2024

Analysis of AP1000 Small-Break Loss-of-Coolant Accident Using Reactor Transient Simulator

The Westinghouse Electric Company’s Advanced Passive Reactor (AP1000) is characterized by the incorporation of passive safety systems (PSSs) designed to ensure core cooling during transient events. The assessment of PSSs requires evaluation of their performance through a combination of experiments and simulations employing various thermal-hydraulic codes. In addition, detailed evaluation of PSSs for a specific reactor system transient analysis such as loss-of-coolant-accident analysis supports understanding representative integral effects test facility development and the further evolution model development and assessment process. Developing a reactor system code is a complex and time-consuming process that requires significant engineering expertise and effort. It can take several months to even years to complete in the early stages of reactor system design and analysis. However, this process can be expedited through the use of transient simulator models for similar reactor systems, which can be used for lesson learning and training purposes. This study uses the Personal Computer Transient Analyzer (PCTRAN) code. The main advantage of PCTRAN is its ease of use and ability to run faster than real time. This study presents the results obtained for a small-break loss-of-coolant accident (SBLOCA) for two breaks using the full version (licensed) of PCTRAN. The purpose of this investigation is to evaluate the overall system behavior during the postulated SBLOCA event as well as assess the capability of the PCTRAN code to reproduce the system response during transient events. The obtained results were compared with the Westinghouse NOTRUMP system code. The PCTRAN code proved to be reliable in predicting the qualitative behavior of the system in both transient cases. As for the system response, it was found that it is contingent on the activation time of the PSSs. The differences in reactor coolant system pressure between the two codes were attributed to the critical flow model and simplification of mass and energy balance. Despite PCTRAN’s limitations, it can still provide a reasonable prediction of various reactor parameters such as pressure, mass flow rate, and void fraction during a SBLOCA scenario. It is worth noting that PCTRAN currently employs a bulk approach similar to that of the Modular Accident Analysis Program (MAAP) and MELCOR codes. However, the upcoming version of PCTRAN will include an artificial intelligence–based detection and accident prevention system, as well as different models for different reactor components. Consequently, PCTRAN has the potential to be upgraded to match the system thermal-hydraulic codes of the U.S. Nuclear Regulatory Commission and become more widely used in cybersecurity to safeguard nuclear power plants from cyberattacks.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2021

CIGS photovoltaics: reviewing an evolving paradigm

Copper indium selenide chalcopyrite-structure alloys with gallium (CIGS) are unique among the highest performing photovoltaic (PV) semiconductor technologies. They are structurally disordered, nonstoichiometric materials that have been engineered to achieve remarkably low bulk nonradiative recombination levels. Nevertheless, their performance can be further improved. This review adopts a fundamental thermodynamic perspective to comparatively assess the root causes of present limitations on CIGS PV performance. The topics of selectivity and passivation of contacts to CIGS and its multinary alloys are covered, highlighting pathways to maximizing the electrochemical potential between those contacts under illumination. Further, an overview of absorber growth methods and resulting properties is also provided. We recommend that CIGS researchers consider strategies that have been successfully implemented in the more mature wafer-based GaAs and Si PV device technologies, based on the paradigm of an idealized PV device design using an isotropic absorber with minimal nonradiative recombination, maximal light trapping, and both electron-selective and hole-selective passivated contacts. We foresee that CIGS technology will reach the 25% efficiency level within the next few years through enhanced collection and reduced recombination. To significantly impact power-generation applications, cost-effective, manufacturable solutions are also essential.

14 SOLAR ENERGY↗
DOE OSTI2020

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

14 SOLAR ENERGY↗
DOE OSTI2022

EXPERIMENTAL AND MODELLING ANALYSIS OF A LARGE-SCALE TWO-PHASE LOOP THERMOSYPHON

Liquid pumping requires large quantities of electrical energy, including about 7% of the energy of building heating, ventilation, and air conditioning (HVAC) systems. To replace pumped condenser-cooling tower water loops with a passive alternative system, we implemented a commercial-scale two-phase loop thermosyphon (TPLT). The unit consists of a 13 m riser integrated with a commercially available cooling tower and circulation water heater that simulates heat loads up to 25 kW. In addition to providing passive cooling capabilities, the cooling tower unit is also maintenance free, reliable, and can operate in both dry and wet modes. This study characterizes the performance (temperature difference between the evaporator and condenser) and the two-phase flow behavior of the loop under various refrigerant charges. Sight glasses installed throughout the loop are used to identify the operating flow regimes in the riser and downcomer. Over the range of operating conditions, we identified that there is an optimal refrigerant charge range for a specific heat load at which near-isothermal operation can be achieved. We further developed a model to predict the operating flow rate and gravitational height in the downcomer and compared it with the experimental data. The results show that the model agrees with the experimental data, in particular the threshold gravitational head height at which there will be subcooled liquid at the condenser exit, indicating that it can be used as a predictive tool for identifying the optimal loop charge for a given heat load.

Loop thermosyphon, passive two phase↗
DOE OSTI2023

Utah FORGE: Slide-Hold-Slide Experiments on Gneiss at Increased Temperature

Included are data from triaxial, single-inclined-fracture friction experiments. The experiments were performed with slide-hold-slide protocol on Utah FORGE gneiss at increased temperature. With a ~10 MPa normal stress, temperatures vary between experiments from room temperature up to 163 Celsius. Hold times vary during experiment from ~10^1 to ~10^5 seconds. Measured are the frictional response upon reactivation after a hold period, active acoustic data (P-wave velocity and amplitude) and passive acoustic data (acoustic emission occurrence and amplitude). There are two types of datafiles: (1) Datafiles containing the friction data, including the temperature and the active acoustic data measured during the experiment (AEXX_Gneiss_Vp_mixref4). The underscore _Vp means that it includes the Vp or P-wave velocity data, with _mixref meaning that we use a mixed reference point for calculating the P-wave velocity. And (2) the datafiles containing the passive acoustics data, a catalog of the acoustic emissions (AE's) measured during the experiment (AEcatalog_AEXX_runX), where AEXX matches the experiment number and runX denotes which part of the experiment the data was collected, matching the times where active acoustic data was collected. AE catalogs are split in two parts when the file size exceeds 1 GB to aid download/opening times.

15 GEOTHERMAL ENERGY↗
DOE OSTI2022

Benchmark Analysis for the Optical Dilatometry Method Using Silicon Carbide Temperature Monitors

The main objective of this project was to conduct a benchmark analysis for the optical dilatometry method by using NSUF’s SiC temperature monitors: two (2) SiC temperature monitors provided by NSUF’s BSU-8242 experiment and two (2) SiC temperature monitors provided by NSUF’s GE-Hitachi experiment. Per the BSU-8242 experiment, KGT-3597 and KGT-3591 had a design temperature of 400°C and an exposure of 3 dpa. Per the GE-Hitachi experiment, KGT-3341 and KGT-3336 had a design temperature of 290°C +/- 50°C and an exposure of 0.5–1 dpa. The KGT-3336 SiC monitor was split into two pieces during the decontamination process, making the dilatometry method the only way to analyze both those pieces. The BSU-8242 monitors revealed peak irradiation temperatures under the design temperature, and the GE-Hitachi monitors revealed peak irradiation temperatures within the design temperature range. The optical dilatometry method measured the peak irradiation temperature of BSU-8242 KGT-3597 to be 330°C, while the resistivity method measured the peak irradiation temperature of BSU-8242 KGT-3591 to be 320°C +/- 20°C. The optical dilatometry method measured the peak irradiation temperatures of the pieces of GE-Hitachi KGT-3336 to be 260°C (for the larger piece) and 220°C (for the smaller piece), while the resistivity method measured the peak irradiation temperature of GE-Hitachi KGT-3341 to be 300°C, with an accuracy range of -50°C to +20°C. Both methods of SiC temperature monitor analysis produced very similar peak irradiation temperatures for each pair of SiC passive monitors from the two experiments, BSU-8242 and GE-Hitachi. The results show dilatometry method to be a reliable and less time-intensive process for determining irradiation temperatures from passive SiC thermometry.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗