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At least 865 records · Page 48

Cost-effective Conductor, Cable, and Coils for High Field Rotating Electric Machines

The purpose of the DOE-AMMTO-funded project was to significantly reduce industrial energy intensity through manufacturing innovations. The project focused on superconducting technology for industrial motors to dramatically increase efficiency. The bottleneck in deploying high temperature superconducting (HTS) motors was high cost and low yield of the conductor manufacturing process. The process yield is low because of the defects in the conductor, forcing the manufacturers to cut off defective sections after characterizing each millimeter. Additionally, the piece lengths tend to be low because of the defects. The project tackled the low-yield manufacturing process challenge by devising an innovative method to use defective conductors in bundled cables without losing performance by engineering current sharing among the conductors. The innovation not only lowers the cost of the conductor but also enhances the reliability of HTS motors and other devices to mitigate the defects that might form during the fabrication and operation of the device. With the increasing interest in REBa2Cu3O7-x (REBCO)-coated conductors for various power, energy, and magnet applications, ensuring the reliability of HTS devices is of significant interest. The EERE funding allowed us to make significant progress in understanding the defects in manufactured conductors and the implications of the defects in superconducting electric motors and other superconducting power and energy applications.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Transforming Energy Through Computational Excellence: Bringing Low Mach Number Reactive Flow Simulations at the Exascale

PeleLMeX's unique capabilities are allowing for reactive flow modeling at unprecedented scales and a reasonable time and cost. The code is currently being extended to tackle more practical, design-oriented simulations by implementing Large Eddy Simulation and data-driven chemical models, providing a fast but accurate tool for engineers considering the emergence of GPU-accelerated platforms. These extensions are critical for enabling the physical insight required to design the next generation of combustion devices as a key component of a renewable energy future.

MATHEMATICS AND COMPUTING↗

Ion Exchange Gels Allow Organic Electrochemical Transistor Operation with Hydrophobic Polymers in Aqueous Solution

Conjugated-polymer-based organic electrochemical transistors (OECTs) are being studied for applications ranging from biochemical sensing to neural interfaces. While new polymers that interface digital electronics with the aqueous chemistry of life are being developed, the majority of high-performance organic transistor materials are poor at transporting biologically relevant ions. Here, the operating mode of an organic transistor is changed from that of an electrolyte-gated organic field-effect transistor (EGOFET) to that of an OECT by incorporating an ion exchange gel between the active layer and the aqueous electrolyte. This device works by taking up biologically relevant ions from solution and injecting more hydrophobic ions into the active layer. Using poly[2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b]thiophene] as the active layer and a blend of an ionic liquid, 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, and poly(vinylidene fluoride-co-hexafluoropropylene) as the ion exchange gel, four orders of magnitude improvement in device transconductance and a 100-fold increase in kinetics are demonstrated. The ability of the ion-exchange-gel OECT to record biological signals by measuring the action potentials of a Venus flytrap is demonstrated. These results show the possibility of using interface engineering to open up a wider palette of organic semiconductors as OECTs that can be gated by aqueous solutions.

Bischak, Connor G.↗

Machine learning for deep elastic strain engineering of semiconductor electronic band structure and effective mass

Abstract The controlled introduction of elastic strains is an appealing strategy for modulating the physical properties of semiconductor materials. With the recent discovery of large elastic deformation in nanoscale specimens as diverse as silicon and diamond, employing this strategy to improve device performance necessitates first-principles computations of the fundamental electronic band structure and target figures-of-merit, through the design of an optimal straining pathway. Such simulations, however, call for approaches that combine deep learning algorithms and physics of deformation with band structure calculations to custom-design electronic and optical properties. Motivated by this challenge, we present here details of a machine learning framework involving convolutional neural networks to represent the topology and curvature of band structures in k -space. These calculations enable us to identify ways in which the physical properties can be altered through “deep” elastic strain engineering up to a large fraction of the ideal strain. Algorithms capable of active learning and informed by the underlying physics were presented here for predicting the bandgap and the band structure. By training a surrogate model with ab initio computational data, our method can identify the most efficient strain energy pathway to realize physical property changes. The power of this method is further demonstrated with results from the prediction of strain states that influence the effective electron mass. We illustrate the applications of the method with specific results for diamonds, although the general deep learning technique presented here is potentially useful for optimizing the physical properties of a wide variety of semiconductor materials.

Tsymbalov, Evgenii↗

Thermal Evaluation of CCS and NACS Reference Devices and Adapters

It is important for manufacturers of electric vehicle charging connectors, inlets, and adapters to understand the thermal performance of their devices. Various standards, such as SAE J1772, SAE J3400, IEC 62196, UL 2251, and UL 2252, list temperature limits that charging hardware needs to meet. However, there are currently very limited standardized reference devices against which to measure connector performance, and those that do currently exist generally serve charging currents less than 500A. This can make determining whether a charging connector meets the appropriate temperature limits difficult. Additionally, as automakers and charging station suppliers transition from the SAE J1772 CCS charging standard to SAE J3400 NACS, a number of CCS-to-NACS and NACS-to-CCS adapters are entering the market. These devices are being produced both by well-known automakers/equipment OEMs and lesser-known third-party suppliers, across a wide range of price points and construction qualities. Though SAE J3400/1 and UL 2252 lay out standards for adapter construction, performance and overtemperature response, there is no guarantee that any particular adapter will follow these standards and react to overtemperature events appropriately. This work addresses these issues by developing and evaluating a set of CCS and NACS reference inlet devices to validate the performance of charging connectors in the 500-800A range. The work also evaluates the performance of multiple NACS-to-CCS and CCS-to-NACS charging adapters with respect to UL 2252 temperature limits and SAE J3400/1 overtemperature signaling criteria.

33 ADVANCED PROPULSION SYSTEMS↗

Development of an Unmanned Mobile Current Turbine Platform: Preprint

The design and development of a prototype unmanned mobile floating platform, equipped with a custom low-flow marine current turbine for autonomously seeking and harnessing tidal/coastal currents is described. The platform is an unmanned surface vehicle in the form of a catamaran with two electric outboard motors and capabilities for autonomous navigation. An undershot water wheel, aided by a custom flow concentrator, has been selected as the basic design for the marine current turbine, which is mounted on the stern of the unmanned surface vehicle platform. The concept of operation is that the platform would navigate to a designated marine current resource, autonomously anchor at the location, align itself in the current and deploy the current turbine using a custom cable-lift deployment mechanism. As the turbine harnesses the local current, an onboard power-take-off device converts the harnessed mechanical energy to electricity which is stored in onboard batteries. Considerations of deployment in tidal and coastal waters required obtaining the necessary environmental permits for conducting in-water testing; developing required mitigation measures in protecting local wildlife and their habitats; and identifying potential in-water test sites and surveying them for their suitability in terms of the current resource, bottom type, water depth, and local boat traffic. The design and development of the turbine and the results of initial in-water testing are discussed. The potential for scaling up the system for extended capacity is presented.

ENGINEERING,TIDAL AND WAVE POWER↗

Electrolytically Assisted Surface Decontamination (EASD{sup TM}) for POCO Operations - 20282

NNL in collaboration with C-Tech Innovation Ltd and Sellafield Ltd has been exploring innovative technologies to enable a significant reduction of radiological hazards within facilities during the Post Operational Clean Out (POCO) phase of a nuclear plant's life cycle. Reducing the hazard by effectively decontaminating plants in-situ during POCO delivers huge cost reductions for future decommissioning operations. These cost reduction benefits are realized by reducing the number and complexity of remote operations as well as lowering the long-term waste disposal costs. Whilst chemical decontamination can achieve the desired level of decontamination, applying aggressive chemical reagents is hazardous, potentially difficult to control and requires there to be complimentary effluent treatment and waste routes. This work has aimed to develop flexible and controllable decontamination processes which could be operated without the additional complexity and issues associated with chemical decontamination. The processes needed to be relatively fast and effective to minimize the time operators would spend in an active area. In addition, there was a driver to produce decontamination methodologies which generated a secondary waste compatible with current routes and which takes advantage of current waste capacity. The strategy therefore was to come up with a solution that works with, rather than against, the science and engineering behind process plants at Sellafield. Electrolytically Assisted Surface Decontamination (EASD{sup TM}) is an innovative electrochemical decontamination process (developed by NNL and C-Tech Innovation Ltd) that can remove activity from contaminated metal in very short time periods. Application of the patented electric waveform to the surface when treating contaminated metal with nitric acid has been shown to significantly enhance the decontamination performance. When compared to proposed baseline washout procedures at Sellafield, the only change to the process is the applied electrical waveform which is temporary and controllable. The current causes dissolution of the metal surface being decontaminated which leads to activity transferring from the plant item into the nitric acid effluent stream. This innovation has the potential to transform the POCO process and allow a nitric acid based washout approach to deliver POCO quickly and cost effectively within the existing infrastructure. Several devices have now been designed that incorporate this EASD{sup TM} technology and enable the decontamination process to be applied to a range items commonly identified as being contaminated during nuclear decommissioning programmes such as pipework, tanks and hotspots of walls/floors. Inactive and active laboratory-scale testing has been completed using both simulated and 'real-life' contaminated (low level waste) metallic items retrieved from different nuclear sites. Active trials demonstrated that contaminated items could be treated to free release levels within minutes. Engineering scale tests are currently being performed, with guidance from Sellafield's system engineers and plant managers, to provide the necessary re-assurance the designed devices could be successfully deployed in an on-plant scenario. The final stage of this development work is to carry out an active demonstration of the decontamination technology on Thorp at Sellafield. This paper aims to highlight progress made to date with the EASD{sup TM} technology and, more specifically, the development of an in-situ decontamination device for deployment within radioactive pipework. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates

In this paper, we experimentally investigated the role of V-defect density on the performance of green III-nitride LEDs grown on sapphire substrates by metalorganic chemical vapor deposition. We systematically varied the threading dislocation (TD) density from 4 × 10 8 to 1 × 10 9 cm -2 by changing the V/III ratio during initial high temperature GaN growth. A 30-period InGaN/GaN superlattice promoted V-defect formation and growth at TDs, where the density of V-defects was correlated to the TD density. By interrupting the LED growth and examining the surface of the active region, we quantified the average size and density of V-defects. In a series of LEDs, we measured a systematic decrease in forward voltage (V F ) with V-defect density. At a V-defect density of 5.0 × 10 8 cm -2 and TD density of 1 × 10 9 cm -2 , green LED devices were demonstrated with λ = 523 nm and V F = 2.94 V at 20 A cm -2 . These results highlight the potential of using V-defect engineering to achieve low V F long wavelength LEDs on sapphire substrates, where opening of remaining threading dislocations into V-defects presents an opportunity for further V F reduction.

36 MATERIALS SCIENCE↗

Hexagonal boron nitride: Epitaxial growth and device applications

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.

42 ENGINEERING↗

Dynamic nanodomains dictate macroscopic properties in lead halide perovskites

Lead halide perovskites have emerged as promising materials for solar energy conversion and X-ray detection owing to their remarkable optoelectronic properties. However, the microscopic origins of their superior performance remain unclear. Here we show that low-symmetry dynamic nanodomains present in the high-symmetry average cubic phases, whose characteristics are dictated by the A-site cation, govern the macroscopic behaviour. We combine X-ray diffuse scattering, inelastic neutron spectroscopy, hyperspectral photoluminescence microscopy and machine-learning-assisted molecular dynamics simulations to directly correlate local nanoscale dynamics with macroscopic optoelectronic response. Our approach reveals that methylammonium-based perovskites form densely packed, anisotropic dynamic nanodomains with out-of-phase octahedral tilting, whereas formamidinium-based systems develop sparse, isotropic, spherical nanodomains with in-phase tilting, even when crystallography reveals cubic symmetry on average. We demonstrate that these sparsely distributed isotropic nanodomains present in formamidinium-based systems reduce electronic dynamic disorder, resulting in a beneficial optoelectronic response, thereby enhancing the performance of formamidinium-based lead halide perovskite devices. By elucidating the influence of the A-site cation on local dynamic nanodomains, and consequently, on the macroscopic properties, we propose leveraging this relationship to engineer the optoelectronic response of these materials, propelling further advancements in perovskite-based photovoltaics, optoelectronics and X-ray imaging.

Materials Science↗

Scalable, low-cost ink-based processing of high-performance silver selenide thermoelectrics

The growing global energy demand and its accelerating contribution to climate change emphasize the urgent need for sustainable energy conversion/harvesting technologies. Thermoelectric (TE) devices offer a compelling route to directly convert waste heat into electricity and enable solid-state cooling without moving parts or harmful refrigerants. Achieving their full potential requires not only higher TE performance (zT) but also scalable, low-cost manufacturing processes. Here, we introduce a transformative ink-based processing approach for scalable manufacturing of high-performance silver selenide-based TE materials and devices. Using a simple, high-throughput ink-mixing and blade coating strategy, our Ag 2 Se-based materials under the optimized composition and processing conditions yield an ultrahigh room-temperature power factor of 2.8 mW m −1 K −2 , over 100% higher than baseline samples and a reproducible figure of merit zT of 1 at room temperature. A thermoelectric generator (TEG) achieves a very competitive power density of 112 mW cm −2 at a 90 °C temperature difference between the hot and cold sides of the device, which is among the highest reported for silver selenide-based TE devices to date. This facile, scalable ink-based processing establishes a practical pathway toward industrial-scale manufacturing and widespread adoption of thermoelectric devices, advancing sustainable energy technologies.

Bappy, Md. Omarsany [University of Notre Dame, IN ↗

Pumped Thermal Electricity Storage with Supercritical CO2 Cycles and Solar Heat Input

Pumped Thermal Electricity Storage (PTES) is an energy storage device that uses grid electricity to drive a heat pump that generates hot and cold storage reservoirs. This thermal potential is later used to power a heat engine and return electricity to the grid. In this article, a PTES variant that uses supercritical carbon dioxide (sCO2) as the working fluid is introduced. sCO2-PTES cycles have higher work ratios and power densities than the systems based on ideal gases that have been investigated to date. Furthermore, sCO2- PTES cycles may achieve higher round-trip efficiencies for a given hot storage temperature (up to 78% at 560°C). The sensitivity of PTES cycles to loss factors such as isentropic efficiencies and temperature differences between the power cycle and storage fluid is investigated. A second concept whereby an sCO2- PTES cycle is integrated with concentrating solar power (CSP) is introduced. This concept ‘time-shifts’ the recompression of an sCO2 recompression cycle to a period of lower electricity prices and stores the heat. When solar heat is dispatched, the recompressor may be avoided as the required heat is obtained from storage, thereby leading to increased heat engine efficiencies. The net work output of this integrated system is 10-18% greater than the conventional recompression cycle. Combining PTES with a CSP power cycle is therefore shown to improve the dispatch of solar heat as well as providing electricity storage services.

41 EE - Solar Energy Technologies Office (EE-4S)↗

High magnetic field response of superconductivity dome in quantum artificial high−⁢𝑇 𝐶 superlattices with variable geometry

It is known that cuprate artificial high-𝑇 𝐶 superlattices (AHTS) with period 𝑑, composed of quantum wells confining interface space charge in stoichiometric Mott insulator layers (𝑆), with thickness 𝐿, at the interface with overdoped normal metallic cuprate layers (𝑁) show a superconducting dome by tuning the geometric 𝐿 over 𝑑 ratio of the SNSN superlattice with the top predicted by quantum material design engineering quantum size effects. Here we report high-field magnetotransport measurements up to 41 Tesla of AHTS across the entire superconducting dome. The results show the universal upward-concave behavior of the temperature-dependent upper critical magnetic field in low-𝑇 𝐶 samples at the rising edge and drop edge of the dome, providing strong evidence consistent with two-band superconductivity in agreement with multigap theory used for quantum design of the SNSN superlattices. The measured superconducting coherence length demonstrates that atomic-scale engineering controls not only the critical temperature but also the intrinsic pair size at Fano-Feshbach resonances physics paving the way toward next-generation quantum devices and shedding light on unconventional superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Phase-Disposition PWM Enabled Model Predictive Control for a Nine-Level Inner-Interleaved Hybrid Multilevel Converter

This article brings forward a phase-disposition pulse width modulation enabled model predictive control (PDPWM-MPC) for a nine-level inner-interleaved hybrid multilevel converter (9L-IHMC). Firstly, three layers of virtual space vector diagrams (VSVD) are established based on the sign patterns of the original and virtual reference vectors in the abcframe, respectively, to achieve the phase-disposition pulse width modulation (PD-PWM) in a non-independent three-phase way. Then, three adjacent virtual vectors in the third-layer VSVD, together with their optimized duty cycles, are applied to guarantee the optimal current tracking. Finally, through the use of the duty cycle alternation approach, dc-link and floating capacitors voltages are balanced and circulating currents are mitigated as well. The proposed PDPWM-MPC can not only enable the decoupling of the low-and high-frequency stages in the 9L-IHMC, but also reduce both output current ripples and computational burden. In addition, it can achieve a constant equivalent switching frequency and address the disproportion of power losses associated with the PD-PWM. Here, both simulations and experiments on a silicon carbide device-based prototype substantiate the effectiveness of the proposed control strategy.

42 ENGINEERING↗

Ultrafast UV AlGaN Metal–Semiconductor–Metal Photodetector With a Response Time Below 25 ps

Here, aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale metal–semiconductor–metal structures and tested with ultrafast, UV laser pulses. The measurements were performed with single-shot oscilloscopes. Pulse-broadening effects caused by the measurement system were systematically evaluated and reduced to resolve the intrinsic response time of the detector. The best-performing devices showed a response time of below 25 ps and dark currents below 20 pA. The devices showed linear response with the bias voltage and the laser energy

42 ENGINEERING↗

Oxidative Segregation of Group V Dopants in CdTe Solar Cells

Transparent conductive oxides are used in many technologies and it is important to understand their interfacial chemical reactions. Here, we use recently developed thermomechanical cleaving and X-ray photoelectron spectroscopy to probe oxidation states at the SnO 2 interface of CdTe solar cells. We show that tin oxide promotes the formation of nanometer-scale oxides of tellurium and sulfur, largely during CdCl 2 /O 2 activation. Surprisingly, in copper-doped devices, relatively low temperature anneals (180-260 degrees C) to diffuse and activate copper acceptors also cause significant oxidation changes at the front interface, providing a heretofore missing aspect of how back contact processes can modify device transport, recombination, and performance. For Group V-doped devices, this same oxidation process causes segregation of the dopants to the SnO 2 interface in their oxidized states, implying that adjacent regions in the absorber have been depleted of dopants. Intriguingly, we demonstrate that because of their layered, van der Walls-bonded crystal structure, spatially segregated Group V oxides may represent a mechanically weak layer in a finished device.

14 SOLAR ENERGY↗