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KPFM and SSRM, which relate to the following characterization reviews, will be introduced briefly in Section 10.2. Some recent nm-scale characterizations of perovskite, CIGS, and CdTe thin-film solar cell materials and devices will be reviewed in Sections 10.3-10.5 and closing remarks will be given in Section 10.6.
Nowadays, photovoltaic (PV) technology has reached a high level of maturity in terms of module efficiency and cost competitiveness in comparison with other energy technologies. As PV has achieved high levels of deployment, the development of devices that can help to reduce PV operation and maintenance costs has become a priority. Soiling can be cause of significant losses in certain PV plants and its detection has become essential to ensure a correct mitigation. For this reason, accurate and low-cost monitoring devices are needed. While soiling stations have been traditionally employed to measure the impact of soiling, their high cost and maintenance have led to the development of innovative low-cost optical sensors, such as the device presented in this work and named “DUSST” (Detector Unit for Soiling Spectral Transmittance). The thermal characterization of DUSST’s components and the methodology used to predict soiling transmittance losses are presented in this study. The results demonstrate that the losses can be predicted with an error lower than 1.4%. The method has been verified with an experimental campaign with naturally soiled coupons exposed outdoors in Jaén, Spain.
Epitaxial lithium niobate (LNO) thin films are an attractive material for devices across a broad range of fields, including optics, acoustics, and electronics. These applications demand high‐quality thin films without in‐plane growth domains to reduce the optical/acoustical losses and optimize efficiency. Twin‐free single‐domain‐like growth has been achieved previously, but it requires specific growth conditions that might be hard to replicate. In this work, a versatile nanocomposite‐seeded approach is demonstrated as an effective approach to grow single‐domain epitaxial lithium niobate thin films. Films are grown through a pulsed laser deposition method and growth conditions are optimized to achieve high‐quality epitaxial film. A comprehensive microstructure characterization is performed and optical properties are measured. A piezoelectric acoustic resonator device is developed to demonstrate the future potential of the nanocomposite‐seeded approach for high‐quality LNO growth for radio frequency (RF) applications.
This final technical report summarizes the key accomplishments on this DOE Early Career Program award received by PI Guihua Yu at the University of Texas at Austin. The main goal of this ECP award was to develop synthetic methodologies, self-assembly approaches towards structurally controlled nanosheets-like solids from the bottom up, and to understand and characterize their chemical/physical characteristics for the design of future-generation energy devices with novel functions and properties, that will have direct implications for energy science and technologies such as energy storage and conversion, and catalysis. The project accomplished these goals by completing the following objectives: • Rational design, synthesis, and self-assembly of structurally-controlled molecular ‘nanosheets’ materials. Moving beyond conventional van der Waals two-dimensional crystals, this project enables new synthesis and processing strategies to develop ultrathin nanosheets materials, from inorganic transition-metal oxides-based, to hybrid organic-inorganic nanomaterials, with structural factors such as facet, thickness and pore structure being well controlled during synthesis or assembly processes. • Fundamental understanding and electrochemical characterization of these assembled molecular ‘nanosheets’ materials via charge/mass transport studies through electrochemical intercalation of different metal ions for next-generation energy storage, as well as electrocatalytic studies using this new material platform for understanding catalytic reaction kinetics and the roles of surface functionalization and interface interactions owing to atomic thickness, nanoscale porosity, and other structural factors.
Profiling of atmospheric CO2 at 2 micron wavelength using the LIDAR technique, has recently gained interest. Although several detectors might be suitable for this application, an ideal device would have high gain, low noise and narrow spectral response peaking around the wavelength of interest. This increases the detector signal-to-noise ratio and minimizes the background signal, thereby increasing the device sensitivity and dynamic range. Detectors meeting the above idealized criteria are commercially unavailable for this particular wavelength. In this paper, the characterization and analysis of Sb-based detectors for 2 micron lidar applications are presented. The detectors were manufactured by AstroPower, Inc., with an InGaAsSb absorbing layer and AlGaAsSb passivating layer. The characterization experiments included spectral response, current versus voltage and noise measurements. The effect of the detectors bias voltage and temperature on its performance, have been investigated as well. The detectors peak responsivity is located at the 2 micron wavelength. Comparing three detector samples, an optimization of the spectral response around the 2 micron wavelength, through a narrower spectral period was observed. Increasing the detector bias voltage enhances the device gain at the narrow spectral range, while cooling the device reduces the cut-off wavelength and lowers its noise. Noise-equivalent-power analysis results in a value as low as 4 x 10(exp -12) W/Hz(exp 1/2) corresponding to D* of 1 x 10(exp 10) cmHz(exp 1/2)/W, at -1 V and 20 C. Discussions also include device operational physics and optimization guidelines, taking into account peculiarity of the Type II heterointerface and transport mechanisms under these conditions.
Current initiatives to increase the burnup of conventional nuclear fuels past the approximate 62 GWd/t limit have been spurred on by direct savings to refueling and waste storage. The technical justification for a new license limit requires extensive qualification through experimental testing. Unlike beginning-of-life fuels, high-burnup fuels are more susceptible to fuel fragmentation, relocation, and dispersal (FFRD), therefore more data is needed to characterize fuels under key accident scenarios. The Transient Reactor Test Facility (TREAT) located at the Idaho National Laboratory has developed a testing apparatus architecture to test fuels and claddings at prototypic conditions. The Transient Water Irradiation System (TWIST) is the latest iteration of a testing device capable of conducting loss of coolant accidents (LOCAs) in TREAT. The Out-of-Pile Testing and Instrumentation TWIST (OPTI-TWIST) is an electrically heated device that is analogous to TWIST. OPTI-TWIST allows for detailed instrumentation and thermal-hydraulic characterization. TWIST ultimately aims to conduct the most advanced in-situ diagnostics to evaluate FFRD in a prototypic LOCA. Moreover, it will explore the phenomenological bifurcation of a decay-energy heat up driven LOCA and a stored-energy heat up driven LOCA. The instrumentation suite includes conventional thermocouples and pressure transducers in addition to an electro impedance sensor, an acoustic emission sensor, an optical pressure sensor, and an optical pyrometer. Characterizing these instruments in OPTI-TWIST eliminates complications of irradiation effects while preserving extreme thermal-hydraulic conditions. Finally, benchmarking both devices to a thermal-hydraulic code like the Reactor Excursion and Leak Analysis Program (RELAP)5-3D provides a unique opportunity for iteration. Pre-test predictions and post-test interpretations inform the physical designs, operational procedures, test conditions, and instrumentation types and positions.
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact behavior. In this study, we revealed that charge transfer across a 2D/semiconductor heterointerface and materials characteristics besides work function should be accounted for in fabrication of electrodes based on 2D materials. Our density functional theory (DFT) calculations predicted that charge transfer between ZnO and NbSe 2 lowers the barrier height at the heterojunction and that conductive surface states of ZnO provide an additional conduction channel in the ZnO/NbSe 2 heterostructures. Crystalline ZnO/NbSe 2 heterostructures were prepared by the hydrothermal method. Electrical characterizations of the ZnO/NbSe 2 heterostructures showed Ohmic-like behavior as predicted by the DFT calculations, opposed to the prediction based on the Schottky–Mott model.
We use spin torque ferromagnetic resonance and ferromagnetic-resonance-driven spin pumping to detect spin-charge interconversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd 3 As 2 , with a metallic ferromagnet, Ni 0.80 Fe 0.20 (permalloy). Angle-resolved photoemission directly reveals the Dirac-semimetal nature of the samples prior to device fabrication and high-resolution transmission electron microscopy is used to characterize the crystalline structure and the relevant heterointerfaces. We find that the spin-charge interconversion efficiency in Cd 3 As 2 /permalloy heterostructures is comparable to that in heavy metals and that it is enhanced by the presence of an interfacial oxide. Spin torque ferromagnetic resonance measurements reveal an in-plane spin polarization regardless of an oxidized or pristine interface. We discuss the underlying mechanisms for spin-charge interconversion by comparing our results with first principles calculations and conclude that extrinsic mechanisms dominate the observed phenomena. Our results indicate a need for caution in interpretations of spin-transport and spin-charge conversion experiments in Cd 3 As 2 devices that seek to invoke the role of topological Dirac and Fermi arc states.
Here, the ability to reduce energy loss at semiconductor surfaces through passivation or surface field engineering is an essential step in the manufacturing of efficient photovoltaic (PV) and optoelectronic devices. Similarly, surface modification of emerging halide perovskites with quasi-two-dimensional (2D) heterostructures is now ubiquitous to achieve PV power conversion efficiencies (PCEs) >25%, yet a fundamental understanding to how these treatments function is still generally lacking. Here we use a unique combination of depth-sensitive nanoscale characterization techniques to uncover a tunable passivation strategy and mechanism found in perovskite PV devices that were the first to reach the >25% PCE milestone. Namely, treatment with hexylammonium bromide leads to the simultaneous formation of an iodide-rich 2D layer along with a Br halide gradient that extends from defective surfaces and grain boundaries into the bulk three-dimensional (3D) layer. This interface can be optimized to extend the charge carrier lifetime to record values >30 μs and to reduce interfacial recombination velocities to values as low as <7 cm s −1 .
The goal of this project is to build upon the work performed under the Texas Tech IDEAS project (DE-AR0000964 monitored by Dr. Isik Kizilyalli) to bring the developed B-10 enriched hexagonal boron nitride (h- 10 BN or 10 BN or BN) semiconductor neutron detector technology to the next level of maturity. In comparison to He-3 ( 3 He) gas detectors, BN neutron detectors possess all the intrinsic advantages of semiconductor devices: light weight, compact size, fast response speed, high spatial resolution, high temperature and low voltage operation capability, ease of mass production via existing semiconductor infrastructures, low cost of operation and maintenance, flexible form factors, and durability. The project will develop a prototype h- 10 BN neutron detector as a potential replacement for the 3 He gas neutron detectors (LND 25185 or equivalent) used in various neutron survey meters currently produced and commercialized by Ludlum Measurements, Inc. (LMI). To increase the overall detection efficiency, it is essential to maximize the collection efficiency of charge carriers (electrons and holes) generated by the nuclear reaction, which demands a further push to achieve 10 BN epilayers with improved material quality. The material growth processes will be guided by characterization of structural, optical, and electrical properties of h-BN. Selective devices will be calibrated at LMI. During ARPA-E supporting period, the key material parameters of h-BN produced by metal organic chemical vapor deposition (MOCVD), including the layer thickness, mobility-lifetime product, surface recombination field and detector size for maintaining a high charge collection efficiency all have been improved by several orders of magnitude. These improvements have enabled the realization of high-performance h 10BN semiconductor thermal neutron detectors. Presently, h- 10 BN thermal neutron detectors developed under ARPA-E’s support hold the record high detection efficiency among all solid-state detectors at 59%. With further development in manufacturing, there is no question that h-BN detectors will replace the traditional He-3 gas detectors in certain application areas by offering obvious advantages of semiconductor technologies over gas detectors and opportunities for users to dedicate the scarce and expensive supply of He-3 gas to other application areas where substitutes of He-3 gas are not possible.
With increased sensor data rates, and limited downlink capability, NASA missions have increased demands for onboard processing for applications ranging from synthetic aperture radar (SAR) data reduction to hyperspectral image processing and recognition, and even artificial intelligence (AI). Graphics Processor Units (GPUs) offer an attractive processing architecture for many of the applications due to their massive parallelism. As no radiation hardened GPU devices currently exist, any near term GPU-based onboard processors must use commercially available devices. To address this need NASA GSFC is collaborating with Cubic Aerospace Incorporated to, (a) characterize the capability of GPUs to meet the demands of a candidate onboard processing application, thereby demonstrating their ability to improve mission performance, reduce spacecraft SWaP, and potentially enable new missions, and (b) evaluate the radiation tolerance of capable COTS GPU devices to determine their suitability for spaceflight applications and understand any mitigations that are needed. A candidate onboard processing image has been prototyped and evaluated on a commercial GPU board and has demonstrated significantly increased processing throughput. Radiation tests for commercial GPU devices are planned for early fiscal year 2019.
Graphene-based devices hold promise for a wide range of technological applications. Yet characterizing the structure and the electrical properties of a material that is only one atomic layer thick still poses technical challenges. Recent investigations indicate that secondary-electron electron-beam-induced current (SE-EBIC) imaging can reveal subtle details regarding electrical conductivity and electron transport with high spatial resolution. Here, it is shown that the SEEBIC imaging mode can be used to detect suspended single layers of graphene and distinguish between different numbers of layers. Pristine and contaminated areas of graphene are also compared to show that pristine graphene exhibits a substantially lower SE yield than contaminated regions. In conclusion, this SEEBIC imaging mode may provide valuable information for the engineering of surface coatings where SE yield is a priority.
Depth dependent molecular orientation and crystalline structure in conjugated polymer thin films is critical for organic electronic device performance and is affected by solvent additive choice during processing. Here, in this work, we focus on the electron donor polymer PM6 and uncover how the solvent additive 1-chloronaphthalene (CN) affects the molecular orientation and the crystalline structure with near edge X-ray absorption fine structure (NEXAFS) spectroscopy and grazing-incidence wide-angle X-ray scattering (GIWAXS), respectively. By quantitatively comparing molecular and crystallite orientations, we find that CN induces distinct surface and bulk morphologies. The polymer conjugated plane orientation at the surface is unaffected by CN, while this orientation is strongly affected in the bulk. Further, we find differences in surface vs bulk crystalline coherence lengths and relative degrees of crystallinity. These insights help provide links between solvent additive and device performance and demonstrate the strengths of a quantitative approach for characterizing organic thin film morphology.
Synthesizing monolayers and heterostructures is an enabling approach to extract new physical phenomena from bulk materials. Among the structures amenable to this approach is stanene, which is a monolayer of tin, similar to graphene, and has been predicted to host one-dimensional topological states at its edges. Stanene can be tuned by decorating with different adatoms, which makes it a promising platform on which to engineer topological devices. Here, we deposit Sn on Bi 2 Te 3 and characterize the growth using anomalous synchrotron x-ray scattering and x-ray photoelectron spectroscopy (XPS). X-ray diffraction data reveal the formation of epitaxial Sn-based structures, along with penetration of Sn into the Bi 2 Te 3 , with Sn intercalating between the upper 10 Bi 2 Te 3 quintuple layers. Additionally, XPS data show deposited Sn reacting to form SnTe and Bi at the Bi 2 Te 3 surface. The calculated heat of reaction for Sn and Bi2Te3 is consistent with an exothermic reaction to SnTe and Bi. Using thermodynamic calculations as a guide, we identify several candidate substrates that can stabilize the stanene phase.
This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-regrown p-GaN after exposure to a simulated Venus environment (460 °C, ∼94 bar, containing CO2/N2/SO2 etc., atmosphere) for over 10 days, and compared them to the performance of GaN p–n diodes without the etch-then-regrow process. After the above-mentioned Venus test, temperature-dependent I–V and microscopy investigation were conducted to study the robustness of etch-then-regrow p-GaN and vertical GaN p–n diodes under harsh environments and operation up to 500 °C. p-electrode degradation is found to be the main issue of the device's performance. This is the highest temperature at which such characterization has been conducted for vertical GaN p–n diodes, therefore establishing a critical reference for the development of p-GaN regrown and vertical GaN-based electronics for extreme environments.
Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. Here, this study explores the properties of Nb x Ti (1–x) N films fabricated by magnetron DC sputtering on 300 mm Si wafers. As a promising alternative to traditional Nb in device manufacturing, Nb x Ti (1–x) N offers numerous advantages, including enhanced stability and scalability to smaller dimensions, in both processing and design. As a ternary material, Nb x Ti (1–x) N allows engineering material parameters by changing deposition conditions. The engineered properties can be used to modulate device parameters through the stack and mitigate failure modes. We report characterization of Nb x Ti (1–x) N films at less than 2% thickness variability, 2.4% T c variability and 3% composition variability. Film resistivity (140–375 Ωcm) shows a strong correlation with the film oxygen content, while the critical temperature T c (4.6 K–14.1 K) is strongly affected by film stoichiometry and its microstructure has only a moderate effect on modifying T c . Our results offer insights about the interplay between film stoichiometry, film microstructure and critical temperature.
In this work, we present a rigorous theoretical framework underpinning the technique of spin-echo modulated small-angle neutron scattering (SEMSANS), and show how the technique can be extended in order to generate spin-textured neutron beams with orbital angular momentum (OAM) via birefringent neutron spin-polarization devices known as magnetic Wollaston prisms. Neutron OAM beams are mathematically characterized by a “cork-screw” phase singularity e iℓΦ about the propagation axis where ℓ is the OAM quantum number. To understand the precise relationship between the emergent OAM state and the variety of spin textures realized by various setups, we have developed a path-integral approach that in the interferometric limit makes a judicious use of magnetic Snell's law. We show that our proposed technique produces a complex two-dimensional pattern of spin-OAM entangled states which may be useful as a probe of quantum magnetic materials. We compare our path-integral approach to the well-known single-path Larmor precession model and present a pedagogical derivation of magnetic Snell's law of refraction for both massive and massless particles based on Maupertuis's action principle.
Electroluminescence (EL) imaging of photovoltiac (PV) modules offers high-speed, high-resolution information about device performance, affording opportunities for greater insight and efficiency in module characterization across manufacturing, research and development, and power plant operations and management. Predicting module electrical properties from EL image features is a critical step toward these applications. In this article, we demonstrate quantification of both generalized and performance mechanism-specific EL image features, using pixel intensity-based and machine learning classification algorithms. From EL image features, we build predictive models for PV module power and series resistance, using time-series current-voltage (I-V) and EL data obtained stepwise on five brands of modules spanning three Si cell types through two accelerated exposures: damp heat (DH) (85°C/85% RH) and thermal cycling (TC) (IEC 61215). Overall, 195 pairs of EL images and I-V characteristics were analyzed, yielding 11700 individual PV cell images. A convolutional neural network was built to classify cells by the severity of busbar corrosion with high accuracy (95%). Generalized power predictive models estimated the maximum power of PV modules from EL images with high confidence and an adjusted-R 2 of 0.88, across all module brands and cell types in extended DH and TC exposures. Mechanistic degradation prediction was demonstrated by quantification of busbar corrosion in EL images of three module brands in DH, and subsequent modeling of series resistance using these mechanism-specific EL image features. For modules exhibiting busbar corrosion, we demonstrated series resistance predictive models with adjusted-R 2 of up to 0.73.