Evidence for redispersion of Ni on LaMnO 3 films following high-temperature oxidation
LaMnO 3 films, 0.5-nm thick, were deposited by atomic layer deposition (ALD) onto γ-Al 2 O 3 that had been modified with 15-wt% CaO. The CaO was shown to be effective in preventing formation of LaAlO 3 that formed when La 2 O 3 was deposited directly onto γ-Al 2 O 3 . Lattice fringes on the resulting CaAl 2 O 4 /γ-Al 2 O 3 substrate were weakly resolved, allowing a detailed characterization of the LaMnO 3 films. High-resolution transmission electron microscopy (HR-TEM) images showed that the LaMnO 3 formed two-dimensional crystallites, ~10 to 15 nm wide, that covered most of the surface. Crystallites with (001) and (111) orientation were clearly identified. High-temperature oxidation caused Ni to spread over the LaMnO 3 film, suggesting there is a reaction of the Ni 2+ cations with the perovskite lattice. Ni formed by high-temperature reduction on these films remained well dispersed and significantly more active for CO 2 reforming of CH 4 compared to Ni on MgAl 2 O 4 , even after repeated oxidation and reduction cycles at 1073 K. Finally, the implications of these results for understanding metal-support interactions between Ni and LaMnO 3 are discussed.