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At least 865 records · Page 48

Nanocolumnar Pt:Ni Alloy Thin Films by High Pressure Sputtering for Oxygen Reduction Reaction

Self-supported nanocolumnar Pt:Ni thin films (TFs) with varying Pt:Ni atomic ratios and Pt mass loadings were produced on a microporous layer (MPL)-like surface composed of carbon particles by high pressure sputtering and examined as oxygen reduction reaction (ORR) electrocatalysts for polymer electrolyte membrane fuel cells. Cauliflower-like microstructures were observed from scanning electron microscopy imaging. Various Pt:Ni atomic ratios were obtained by simply changing the relative deposition power between Pt and Ni source and investigated by X-ray diffraction and quartz crystal microbalance analysis. Additionally, electrochemical characterization of the Pt:Ni-TF/MPL-like-layer/glassy-carbon samples was conducted through benchtop cyclic voltammetry and rotating disk electrode measurements. The electrochemically active surface area (ECSA) was found to be between 22–42 m 2 g -1 for different Pt:Ni atomic ratios. Lower Pt mass loadings exhibited a higher ECSA and the catalytic activity of all Pt:Ni ratios increased with the increase in Pt mass loading. The ORR activity of the Pt:Ni-TFs increased in the order of 3:1 < 1:1 < 1:3 with exhibiting a specific activity of 1781 μA cm -2 and mass activity of 0.66 A mg -1 for the Ni-rich film with 1:3 ratio. The catalytic performance of Pt:Ni-TFs were higher than traditional high surface area carbon supported Pt nanoparticles, elemental Pt nanorods, and Pt-Ni nanorods.

08 HYDROGEN↗

All-Sputtered, Superior Power Density Thin-Film Solid Oxide Fuel Cells with a Novel Nanofibrous Ceramic Cathode

Thin film solid oxide fuel cells (TF-SOFCs) are attracting attention due to their ability to operate at comparatively lower temperatures (400–650 °C) that are unattainable for conventional anode-supported SOFCs (650–800 °C). However, limited cathode performance and cell scalability remain persistent issues. Here, we report a new approach of fabricating yttria-stabilized zirconia (YSZ)-based TF-SOFCs via a scalable magnetron sputtering process. Notable is the development and deposition of a porous La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 2.95 (LSCF)-based cathode with a unique fibrous nanostructure. This all-sputtered cell shows an open-circuit voltage of ~1.0 V and peak power densities of ~1.7 and ~2.5 W/cm 2 at 600 and 650 °C, respectively, under hydrogen fuel and air along with showing stable performance in short-term testing. The power densities obtained in this work are the highest among YSZ-based SOFCs at these low temperatures, which demonstrate the feasibility of fabricating exceptionally high-performance TF-SOFC cells with distinctive dense or porous nanostructures for each layer, as desired, by a sputtering process. This work illustrates a new, potentially low-cost, and scalable platform for the fabrication of next-generation TF-SOFCs with excellent power output and stability.

25 ENERGY STORAGE↗

Disentangling the gap between pure and mixed-gas performance of thin film composite membranes through improved cell design and testing methods

Testing thin film composite (TFC) membrane coupons at low stage-cuts (≤5%) in a sweep-gas permeation system is a common practice to obtain mixed-gas separation properties for benchmarking performance and making scale-up decisions. However, even under these idealized conditions, mixed-gas permeance and selectivity can be more than 30% lower than their pure-gas values, partially due to concentration polarization, an effect that typically intensifies with increased membrane permeance. This study investigates the effect of cell design on mixed-gas testing using PolyActive TM TFC membranes with pure-gas CO 2 permeance of 1700 – 3100 gas permeance unit (GPU), covering the permeance range of most state-of-the-art CO 2 /N 2 separation membranes. Here, we designed and 3D-printed a counter-current permeation cell with enhanced feed and sweep flow efficiency, resulting in a 33 – 41% increase in mixed-gas CO 2 permeance compared to traditional permeation cells. Furthermore, we compared sweep-gas and vacuum permeation methods using traditional permeation cells, revealing that the latter delivers 41% higher mixed-gas CO 2 permeance, because vacuuming effectively minimizes the downstream concentration polarization. These findings highlight the importance of cell design and permeation apparatus selection in lab-scale mixed-gas testing, with strong implications for module design and process optimization at the industrial scale.

mixed gas performance↗

Vertical Strain-Driven Antiferromagnetic to Ferromagnetic Phase Transition in EuTiO 3 Nanocomposite Thin Films

Three-dimensional (3D) strain induced in self-assembled vertically aligned nanocomposite (VAN) epitaxial films provides an unrivaled method to induce very large strains in thin films. Here, by growing VAN films of EuTiO 3 (ETO)–Eu 2 O 3 (EO) with different EO fractions, the vertical strain was systematically increased in ETO, up to 3.15%, and the Eu–Ti–Eu bond angle along $\langle$111$\rangle$ decreased by up to 1°, leading to a weakening of the antiferromagnetic interactions and switching from antiferromagnetic to ferromagnetic behavior. Our work has shown for the first time that Eu–Ti–Eu superexchange interactions play a key role in determining the magnetic ground state of ETO. Broadly, our work serves as an exemplar to show that multifunctionalities in strong spin–lattice coupling perovskite oxides can be uniquely tuned at the atomic scale using simple VAN structures.

36 MATERIALS SCIENCE↗

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

Abstract We present the fabrication of a MoS 2−x Se x thin film from a co-sputtering process using MoS 2 and MoSe 2 commercial targets with 99.9% purity. The sputtering of the MoS 2 and MoSe 2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS 2−x Se x phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS 2−x Se x thin film, indicated by a blue shift in the A 1g and E 1 g vibrational modes at 355 cm −1 and 255 cm −1 , respectively. This work is complemented by computing the thermodynamic stability of a MoS 2−x Se x phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials’ fabrication and target latent applications of such structures.

36 MATERIALS SCIENCE↗

Irradiation Driven Restructuring of Nanocrystalline ThO 2 and Th 1–x U x O 2 Thin Films

Irradiation induced structural changes of actinide oxide materials is a key consideration in their development and use as nuclear fuels. This study reported on the synthesis of ThO 2 and Th 1–x U x O 2 (x = 0.15, 0.50) thin films, fabricated using electrospray-assisted solution combustion synthesis, and their responses to ion irradiation. Krypton ion irradiations, up to a fluence of 1 × 10 16 ions/cm 2 , were carried out to simulate radiation damage induced by fission products in a reactor environment. Structural and chemical changes induced by irradiation were analyzed using high-resolution scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDS), and electron energy-loss spectroscopy (EELS). It was determined that the extent and nature of irradiation-induced damage are strongly correlated with the uranium content. ThO 2 films were most susceptible to radiation-induced damage, with significant cavity formation and delamination from the substrate at high fluence. Of the compositions studied, Th 0.85 U 0.15 O 2 films showed the highest stability, characterized by moderate grain growth and the absence of voids or severe defect structures. In contrast, Th 0.5 U 0.5 O 2 films accumulated extensive damage, including the formation of a nanocrystalline central region. EELS analysis indicated that oxygen displacement is the primary driver of structural degradation in Th 0.5 U 0.5 O 2 films. α-particle spectroscopy confirmed minimal actinide loss across all compositions, underscoring the mechanical robustness of the films. These findings provide insight into the irradiation-induced damage mechanisms in Th O2 and Th 1–x U x O 2 systems, supporting their development as potential materials for nuclear fuels and irradiation-tolerant thin film targets in nuclear physics measurements.

Th1−xUxO2↗

Sierpinski Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Deposition of Bi on InSb(111)B reveals a striking Sierpinski-triangle (ST)-like structure in Bi thin films. Such a fractal geometric topology is further shown to turn off the intrinsic electronic topology in a thin film. Relaxation of a huge misfit strain of about 30 to 40% between Bi adlayer and substrate is revealed to drive the ST-like island formation. A Frenkel-Kontrova model is developed to illustrate the enhanced strain relief in the ST islands offsetting the additional step energy cost. Besides a sufficiently large tensile strain, forming ST-like structures also requires larger adlayer-substrate and intra-adlayer elastic stiffnesses, and weaker intra-adlayer interatomic interactions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Active site identification and CO oxidation in UiO-66-XX thin films

Metal-organic frameworks (MOFs) offer an intrinsically porous and chemically tunable platform for gas adsorption, separation, and catalysis. Herein we investigate thin film derivatives of the well-studied Zr–O based MOF powders to understand their adsorption properties and reactivity with their adaption to thin films, involving diverse functionality with the incorporation of different linker groups and the inclusion of embedded metal nanoparticles: UiO-66, UiO-66-NH 2 , and Pt@UiO-66-NH 2 . Using transflectance IR spectroscopy, we determine the active sites in each film upon consideration of the acid-base properties of the adsorption sites and guest species, and perform metal-based catalysis with CO oxidation of a Pt@UiO-66-NH 2 film. Our study shows how surface science characterization techniques can be used to characterize the reactivity and the chemical and electronic structure of MOFs.

36 MATERIALS SCIENCE↗

Epitaxial thin film growth in outer space

A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

Ignatiev, Alex↗

Filament Formation in TaO x Thin Films for Memristor Device Application: Modeling Electron Energy Loss Spectra and Electron Transport

Abstract Although understanding filament formation in oxide‐based memristive devices by theory has emerged, there are still fundamental unanswered questions. Importantly, for practical application of thin films the material in its amorphous state is to be considered, but mostly lacking so far, and details on sub‐stoichiometry are also scarce. To gain insight into the optical and electronic properties of sub‐stoichiometric amorphous tantalum oxide (TaO x ), the electron energy loss spectrum (EELS) of model systems is characterized theoretically and electron transport characteristics are analyzed in detail. Calculated blue‐shifts by increasing sub‐stoichiometry explained the measurements, potentially suggesting estimation of oxygen vacancy concentrations through EEL spectra. Electron transport results based on TaO x material models validated by EELS measurements show that oxygen vacancy filamentary paths are initiated at low bias upon increasing sub‐stoichiometry yet noting an interplay with the local amorphous structure. Contact resistances at interfaces of the TaO x switching layer and a tantalum scavenging layer or titanium nitride electrode are quantified, indicating the possibility for either oxygen vacancy‐ or metal cluster‐based conduction mechanisms at the interface. The computational work, combined with experimental characterization for validation, provides a basis for investigating effects of sub‐stoichiometry on filament formation in TaO x thin film memristive devices.

36 MATERIALS SCIENCE↗

Formation of Mn-rich interfacial phases in Co 2 Fe x Mn 1-x Si thin films

Here, we report the formation of Mn-rich regions at the interface of Co 2 Fe x Mn 1-x Si thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region: (1) is 1–2 nm wide, (2) occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and (3) displaces both Co and Fe indiscriminately. We also observe a Mn-depleted region in each film directly above each Mn-rich interfacial layer, roughly 3 nm in width in the x = 0 and x = 0.3 films, and 1 nm in the x = 0.7 (less Mn) film. We posit that growth energetics favor Mn diffusion to the interface even when there is no significant Ga interdiffusion into the epitaxial film. Element-specific X-ray magnetic circular dichroism (XMCD) measurements show larger Co, Fe, and Mn orbital to spin magnetic moment ratios compared to bulk values across the Co 2 Fe x Mn 1-x Si compositional range. The values lie between reported values for pure bulk and nanostructured Co, Fe, and Mn materials, corroborating the non-uniform, layered nature of the material on the nanoscale. Finally, SQUID magnetometry demonstrates that the films deviate from the Slater-Pauling rule for uniform films of both the expected and the measured composition. The results inform a need for care and increased scrutiny when forming Mn-based magnetic thin films on III-V semiconductors like GaAs, particularly when films are on the order of 5 nm or when interface composition is critical to spin transport or other device applications.

36 MATERIALS SCIENCE↗

Metallurgical coatings and thin films; Proceedings of the International Conference, 18th, San Diego, CA, Apr. 22-26, 1991. Vols. 1 & 2

A conference on metallurgical coatings and thin films produced papers in the areas of coatings for use at high temperatures; hard coatings and deposition technologies; diamonds and related materials; tribological coatings/surface modifications; thin films for microelectronics and high temperature superconductors; optical coatings, film characterization, magneto-optics, and guided waves; and methods for characterizing films and modified surfaces.

Mcguire, Gary E.↗

Polymer thin films as universal substrates for extreme ultraviolet absorption spectroscopy of molecular transition metal complexes

Polystyrene and polyvinyl chloride thin films are explored as sample supports for extreme ultraviolet (XUV) spectroscopy of molecular transition metal complexes. Thin polymer films prepared by slip-coating are flat and smooth, and transmit much more XUV light than silicon nitride windows. Analytes can be directly cast onto the polymer surface or co-deposited within it. The M-edge XANES spectra (40–90 eV) of eight archetypal transition metal complexes (M = Mn, Fe, Co, Ni) are presented to demonstrate the versatility of this method. The films are suitable for pump/probe transient absorption spectroscopy, as shown by the excited-state spectra of Fe(bpy) 3 2+ in two different polymer supports.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Interface diagnostics platform for thin-film solid-state batteries

Understanding the impedances of battery materials and their interfaces remains a major challenge, usually addressed by electrochemical impedance spectroscopy (EIS) where frequency-dependent complex impedance of full battery cells is measured and then modeled by a network of connected electrical elements. As conventionally applied, this approach produces ambiguity in that (1) multiple different network configurations may fit the data convincingly and (2) the method offers no direct association of the electrical elements with physical features of the battery. Here we present a new methodology that resolves both sources of ambiguity, enabled by expanding the experimental scope to directly inform the configuration of elements and their parameters in the network model. We demonstrate this methodology using thin film fabrication of solid state battery devices patterned by shadow masked sputter deposition, so that diagnostic devices corresponding to individual interface and material components can be fabricated simultaneously with full cell batteries. EIS models for the diagnostic devices can then be connected to form full cell networks whose topology matches the well-known physical configuration of the battery. When connected in this way, the full network model – made from connecting the diagnostic device EIS models – fits the full cell EIS data. For the case of a thin film solid state battery composed of amorphous silicon anode, lithium phosphorus oxynitride (LiPON) solid electrolyte, and lithium vanadium oxide (Li x V 2 O 5 ) cathode, we show that the approach allows us to identify ionic impedance/conductivity of the cathode/electrolyte as a limiting impedance and the anode/electrolyte interface cycling instability as a primary degradation factor.

25 ENERGY STORAGE↗

Structural characterization of highly alloyed (Al,Gd)N thin films

Highly alloyed (Al,Gd)N is of potential interest in a variety of applications, including neutron detection and in devices such as non-volatile memory. Gd has been shown to have very low equilibrium solubility in AlN at room temperature; however, non-equilibrium deposition techniques such as sputtering are able to deposit thin films, which incorporate large amounts of Gd. Here, we characterize a highly-alloyed (Al,Gd)N combinatorial thin film grown by RF sputtering on a GaN substrate, looking for any evidence of chemical or phase segregation or structural disorder in the films. Compositions with between 13% and 32% Gd (on a cation basis) were studied. No evidence was found for chemical or phase segregation in any studied composition. Higher degrees of Gd incorporation led to greater structural disorder in the film and a tendency toward amorphization; however, electron diffraction shows that the film does not become fully amorphous at any of the studied compositions, instead retaining textured local order even at 32% Gd. Electron energy loss spectra suggest that the material retains a locally wurtzite-like tetrahedral bonding environment at all studied compositions.

36 MATERIALS SCIENCE↗