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At least 865 records · Page 48

Effect of Cl{sub 2}- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

A Cl{sub 2}-HBr-O{sub 2}/Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate ({approx}600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO{sub x} passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl{sub 2}-based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be {approx}1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl{sub 2}-based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl{sub 2}-based ICP etching for the recovery of the InP material.

36 MATERIALS SCIENCE↗

Cl atom recombination on silicon oxy-chloride layers deposited on chamber walls in chlorine-oxygen plasmas

Chlorine atom recombination coefficients were measured on silicon oxy-chloride surfaces deposited in a chlorine inductively coupled plasma (ICP) with varying oxygen concentrations, using the spinning wall technique. A small cylinder embedded in the walls of the plasma reactor chamber was rapidly rotated, repetitively exposing its surface to the plasma chamber and a differentially pumped analysis chamber housing a quadruple mass spectrometer for line-of-sight desorbing species detection, or an Auger electron spectrometer for in situ surface analysis. The spinning wall frequency was varied from 800 to 30 000 rpm resulting in a detection time, t (the time a point on the surface takes to rotate from plasma chamber to the position facing the mass or Auger spectrometer), of {approx}1-40 ms. Desorbing Cl{sub 2}, due to Langmuir-Hinshelwood (LH) Cl atom recombination on the reactor wall surfaces, was detected by the mass spectrometer and also by a pressure rise in one of the differentially pumped chambers. LH Cl recombination coefficients were calculated by extrapolating time-resolved desorption decay curves to t = 0. A silicon-covered electrode immersed in the plasma was either powered at 13 MHz, creating a dc bias of -119 V, or allowed to electrically float with no bias power. After long exposure to a Cl{sub 2} ICP without substrate bias, slow etching of the Si wafer coats the chamber and spinning wall surfaces with an Si-chloride layer with a relatively small amount of oxygen (due to a slow erosion of the quartz discharge tube) with a stoichiometry of Si:O:Cl = 1:0.38:0.38. On this low-oxygen-coverage surface, any Cl{sub 2} desorption after LH recombination of Cl was below the detection limit. Adding 5% O{sub 2} to the Cl{sub 2} feed gas stopped etching of the Si wafer (with no rf bias) and increased the oxygen content of the wall deposits, while decreasing the Cl content (Si:O:Cl = 1:1.09:0.08). Cl{sub 2} desorption was detectable for Cl recombination on the spinning wall surface coated with this layer, and a recombination probability of {gamma}{sub Cl} = 0.03 was obtained. After this surface was conditioned with a pure oxygen plasma for {approx}60 min, {gamma}{sub Cl} increased to 0.044 and the surface layer was slightly enriched in oxygen fraction (Si:O:Cl = 1:1.09:0.04). This behavior is attributed to a mechanism whereby Cl LH recombination occurs mainly on chlorinated oxygen sites on the silicon oxy-chloride surface, because of the weak Cl-O bond compared to the Cl-Si bond.

36 MATERIALS SCIENCE↗

Characterization of metal oxide layers grown on CVD graphene

Growth of a fully oxidized aluminum oxide layer with low surface roughness on graphene grown by chemical vapor deposition is demonstrated. This is accomplished by the deposition of a 0.2 nm thick titanium seed layer on the graphene prior to the deposition of the aluminum under ultra high vacuum conditions, which was subsequently oxidized. The stoichiometry and surface roughness of the oxide layers were measured for a range of titanium and aluminum depositions utilizing ex situ x-ray photoelectron spectrometry and atomic force microscopy. These fully oxidized films are expected to produce good dielectric layers for use in graphene based electronic devices.

36 MATERIALS SCIENCE↗

Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. % Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Growth of SrVO{sub 3} thin films by hybrid molecular beam epitaxy

The authors report the growth of stoichiometric SrVO{sub 3} thin films on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO{sub 3} films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes in the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO{sub 3} thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.

36 MATERIALS SCIENCE↗

Atomic layer deposition of (K,Na)(Nb,Ta)O{sub 3} thin films

Thin films of complex alkali oxides are frequently investigated due to the large range of electric effects that are found in this class of materials. Their piezo- and ferroelectric properties also place them as sustainable lead free alternatives in optoelectronic devices. Fully gas-based routes for deposition of such compounds are required for integration into microelectronic devices that need conformal thin films with high control of thickness- and composition. The authors here present a route for deposition of materials in the (K,Na)(Nb,Ta)O{sub 3}-system, including the four end members NaNbO{sub 3}, KNbO{sub 3}, NaTaO{sub 3}, and KTaO{sub 3}, using atomic layer deposition with emphasis on control of stoichiometry in such mixed quaternary and quinary compunds.

42 ENGINEERING↗

Modified atomic layer deposition of MoS 2 thin films

As one of the most attractive transition metal dichalcogenides (TMDs), the growth of molybdenum disulfide (MoS 2 ) with industrial compatibility is of great importance. Atomic layer deposition (ALD) has been shown to be a promising method to achieve the growth of high-quality TMD materials. However, MoS 2 films deposited by ALD often are amorphous with nonideal stoichiometry and require high-temperature post-deposition annealing. Here, we introduce a modified ALD recipe using Mo(CO) 6 and H 2 S, resulting in controllable linear growth behavior, a S-to-Mo ratio of 2:1, and crystalline films at a temperature as low as 190 °C. The growth mechanisms and key factors leading to this improvement are proposed and complemented by kinetics calculations. This newly developed methodology relies on aligning the process time with the reaction kinetics of carbonyl disassociation. The MoS 2 films prepared herein were shown to be active hydrogen evolution reaction catalysts.

2D materials↗

Shake loss intensities in x-ray photoelectron spectroscopy: Theory, experiment, and atomic composition accuracy for MgO and related compounds

The relative intensities of XPS core levels, scaled by their photoionization cross sections, are regularly used to determine sample atomic composition. Cross sections, however, give the intensity to all possible final states for the core ionizations, not just to the main peak. This includes all intrinsic satellite structure (shake states and, for open shell systems, the different ionic multiplets). In practice, for solids, this is usually experimentally impossible to determine accurately because such a satellite structure sits on the inelastically scattered electron background and cannot be easily separated. Therefore, usually, only the intensity of the main peak is used. This limits the ultimate possible accuracy of XPS composition determination. The purpose of the present paper is to examine the contributions that a theoretical analysis of losses of intensity can make to improve quantitation. For an MgO single crystal, we show that the correct stoichiometry of 1:1 can be recovered using the theoretical analysis of the experimental MgO peak ratio intensities. For materials with a sufficient bandgap for the XPS main peaks to be separated from the scattered background, the intensity of main peaks can often be accurately determined. Thus, if one uses theory to calculate that fraction of the total intensity lost from a main peak into all its satellite structure, the intensity of just main peaks could then be used to more accurately determine relative atom % composition. This work tests this approach using a single crystal MgO (50% Mg, 50% O) standard. Ab initio electronic structure theory of representative MgO clusters is used to determine Hartree–Fock wave functions for the ground state and final ionized states corresponding to the main Mg 2p and O1s XPS peaks of the oxide. The sudden approximation, SA, is used to determine the fractional losses from these main peaks to shake satellites, which is found to be greater for O1s than Mg2p. This results in predicted “apparent composition” for stoichiometric MgO of 55.2% Mg, 44.8% O instead of the true 50% Mg, 50% O. Equivalent theory for CaO results in a predicted apparent Ca value of 53.4%. Experimentally, using Mg2s or 2p intensity ratio to O1s, we find values between 52.2% and 56.0% Mg using two crystals and four different instrument electron pass energies. The average value of the measurements is 54.5% Mg when corrected for the presence of an adventitious carbon overlayer and slight surface hydroxide. Though this agreement with theory may be somewhat fortuitous, given the potential experimental errors, which are fully discussed, it is similar to that in our earlier study on LiF. We also present preliminary experimental data on Mg(OH) 2 and MgSO 4 , which show a similar trend of apparently higher than 50% Mg, but we have no theory values. We are not yet able to experimentally test for validation of the difference between apparent composition for MgO (55.2% Mg) and CaO (53.4% Ca), owing to significant carbonate formation at the surface of the single crystal CaO. Here, an important conclusion is that the theoretical determination of shake losses, obtained with ab initio wavefunctions and the SA, is likely to be a useful way to calibrate the accuracy and reliability of compositions obtained from XPS intensities and merits further study.

47 OTHER INSTRUMENTATION↗

Jahn–Teller-driven phase segregation in Mn x Co 3–x O 4 spinel thin films

Transition metal spinel oxides comprised of earth-abundant Mn and Co have long been explored for their use in catalytic reactions and energy storage. However, understanding functional properties can be challenging due to differences in sample preparation and the ultimate structural properties of the materials. Epitaxial thin film synthesis provides a novel means of producing precisely controlled materials to explore the variations reported in the literature. In this work, Mn x Co 3–x O 4 samples from x = 0 to x = 1.28 were synthesized through molecular beam epitaxy and characterized to develop a material properties map as a function of stoichiometry. Here, films were characterized via in situ x-ray photoelectron spectroscopy, x-ray diffraction, scanning transmission electron microscopy, and polarized K-edge x-ray absorption spectroscopy. Mn cations within this range were found to be octahedrally coordinated, in line with an inverse spinel structure. Samples largely show mixed Mn 3+ and Mn 4+ character with evidence of phase segregation tendencies with the increasing Mn content and increasing Mn 3+ formal charge. Phase segregation may occur due to structural incompatibility between cubic and tetragonal crystal structures associated with Mn 4+ and Jahn–Teller active Mn 3+ octahedra, respectively. Our results help in explaining the reported differences across samples in these promising materials for renewable energy technologies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structure of a Eukaryotic CLC Transporter Defines an Intermediate State in the Transport Cycle

CLC proteins transport chloride (Cl{sup -}) ions across cell membranes to control the electrical potential of muscle cells, transfer electrolytes across epithelia, and control the pH and electrolyte composition of intracellular organelles. Some members of this protein family are Cl{sup -} ion channels, whereas others are secondary active transporters that exchange Cl{sup -} ions and protons (H{sup +}) with a 2:1 stoichiometry. We have determined the structure of a eukaryotic CLC transporter at 3.5 angstrom resolution. Cytoplasmic cystathionine beta-synthase (CBS) domains are strategically positioned to regulate the ion-transport pathway, and many disease-causing mutations in human CLCs reside on the CBS-transmembrane interface. Comparison with prokaryotic CLC shows that a gating glutamate residue changes conformation and suggests a basis for 2:1 Cl{sup -}/H{sup +} exchange and a simple mechanistic connection between CLC channels and transporters.

59 BASIC BIOLOGICAL SCIENCES↗

Synthesis, X-ray Diffraction Characterization, Mössbauer Spectroscopy, and Dielectric Properties of Solid Solutions in the PbFe{sub 2/3}W{sub 1/3}O{sub 3}–PbSc{sub 2/3}W{sub 1/3}O{sub 3} System

Ceramic Pb(Fe{sub 1–x}Sc{sub x}){sub 2/3}W{sub 1/3}O{sub 3} samples with 0 ≤ x ≤ 1 have been prepared and characterized by X-ray diffraction, Mössbauer spectroscopy, and dielectric and pyroelectric measurements. The stoichiometry ranges of the perovskite solid solutions in this system have been identified, their structural parameters have been determined, and their dielectric permittivity, dielectric loss tangent, resistivity, and thermally stimulated depolarization current have been measured as functions of temperature. The composition dependences of the dielectric properties for the solid solutions have been obtained. The solid solutions have been shown to exhibit ferroelectric relaxor properties, with a well-defined maximum in their permittivity in the range 180–250 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

X-ray and neutron diffraction study of the defect crystal structure of the as-grown nonstoichiometric phase Y{sub 0.715}Ca{sub 0.285}F{sub 2.715}

This work begins a series of papers aimed at studying the defect structure of nonstoichiometric phases R{sub 1-y}Ca{sub y}F{sub 3-y} with a tysonite-type (LaF{sub 3}) structure. In the single-crystal structure of Y{sub 0.715}Ca{sub 0.285}F{sub 2.715} with a tysonite-type small unit cell (sp. gr. P6{sub 3}/mmc, a = 3.9095(2) A, c = 6.9829(2) A; Z = 2; R{sub w} = 2.16%), the displacements of Y{sup 3+} cations and F{sup 2-} anions from 6{sub 3} symmetry axes were observed for the first time. The X-ray diffraction pattern shows weak satellites insufficient for structural calculations. The LaF{sub 3} structure type is stabilized up and down on the temperature scale due to anion vacancies and the symmetrizing effect of Ca{sup 2+} cations lying on 6{sub 3} symmetry axes. At 120 Degree-Sign C the fluoride-ion conductivity in the nonstoichiometric phase Y{sub 0.715}Ca{sub 0.285}F{sub 2.715} is five orders of magnitude higher than that in the stoichiometric phase {beta}-YF{sub 3}. The transition to a superionic state is caused by a deviation from stoichiometry and is not associated with reconstructive phase transformation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Determination of the concentration of conduction electrons in Y{sub 3}Fe{sub 5}O{sub 12} garnet crystals

Ferrites (garnets) are a model object of study and a promising material to be used in magneto-optical devices for data recording and processing and IR modulators. Due to the narrow ferromagnetic resonance line, optical transparency, and high elastic Q factor of ferrite single crystals, they are promising for solid-state microwave, optoelectronic, and computation devices. To ensure the optimal application of ferromagnetic materials, it is necessary to complete the following important task: develop a certification for samples with allowance for the degree of their imperfection caused by the deviation of crystals with garnet structure from stoichiometry, the competitive incorporation of process and dominant impurities, oxygen vacancies, etc.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Simulation of Simple and Complex Gadolinium Molybdates by the Interatomic Potential Method

Crystals of ferroelectric‒ferroelastic gadolinium molybdate Gd{sub 2}(MoO{sub 4}){sub 3}, calcium molybdate CaMoO{sub 4}, and double sodium‒gadolinium molybdates of stoichiometric (Na{sub 1/2}Gd{sub 1/2}MoO{sub 4}) and cationdeficient (Na{sub 2/7}Gd{sub 4/7}MoO{sub 4}) compositions, which are used to design solid-state lasers, phosphors, and white LEDs, have been simulated by the interatomic potential method. Their structural, mechanical, and thermodynamic properties are calculated using a unified system of interatomic potentials and effective ion charges, which demonstrated transferability and made it possible not only to describe the existing experimental data but also to predict some important physical and thermodynamic properties of molybdate crystals. The influence of the deviation from stoichiometry and partial ordering of cations on sites in nonstoichiometric crystals on the properties and local structure of sodium‒gadolinium molybdates is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

New M{sub (2 + δ1)}X{sub (2 + δ2)} Superstructure of Ordered Nanocrystalline Titanium Monoxide and the Problem of Transition States

The results of experiments on the vacancy ordering in nanocrystalline nonstoichiometric titanium monoxide TiO{sub y} (space group Fm 3-bar m), which is accompanied by the formation of the orthorhombic Ti{sub 9}O{sub 10} phase (space group Immm), are considered. The vacancy distribution in the ordered phase is described by a two-sublattice-ordering M{sub (2 + δ1)}X{sub (2 + δ2)} superstructure. The disorder–order (TiO{sub y}–Ti{sub (2 + δ1)}O{sub (2 + δ2)}) phase transition is accompanied by symmetry distortions along non-Lifshitz star {k_4}. When ordering, vacancies concentrate in every third (110) plane of the basic B1-type structure. The deviation of stoichiometry is caused by different vacancy concentrations in the defect planes in the metallic and nonmetallic sublattices (parameters δ{sub 1} and δ{sub 2}, respectively). The new class of M{sub (n + δ1)}X{sub (n + δ2)} superstructures is shown to generate numerous order–disorder transition state models, which cannot be described in terms of the mean-field approximation. At δ{sub 1} = δ{sub 2} = 0.5, the orthorhombic M{sub (2 + δ1)}X{sub (2 + δ2)} structure is a particular case of the partly disordered monoclinic M{sub 5}X{sub 5} superstructure (space group C2/m(A2/m)), which is characteristic of a coarse-grained state.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

The effect of an excess of components on the electrical properties of indium-antimonide films

The causes of anomalous behavior of the Hall mobility of charge carriers as a result of a decrease in the measurement temperature from 300 K in indium-antimonide films obtained by the method of three temperatures are studied. It is shown experimentally that there exist drops in the “admissible” temperatures of evaporators of components and the substrate within which continuous conducting films are obtained. The optimal conditions for sample preparation for which the values of the mobility remain practically constant in the temperature range of 150–350 K are determined. On the basis of the comparison with optical-transmission spectra, it is concluded that there is a high concentration of defects in the films; these defects are related to deviation of the composition from stoichiometry and act as donor and acceptor centers. The presence of such defects makes it possible to explain the decrease in mobility in the films as the temperature is lowered.

36 MATERIALS SCIENCE↗

Solubility of oxygen in CdS single crystals and their physicochemical properties

The specific features of oxygen dissolution in CdS using the example of single crystals grown by the gas-transport method with deviations from stoichiometry at 1100°C are considered. The effect of various types of intrinsic point defects in crystals of different composition on the form in the presence of oxygen is analyzed. It is shown that the most stable composition thermodynamically is that corresponding to nonstoichiometric “self-activated cadmium sulphide” stabilized with oxygen.

36 MATERIALS SCIENCE↗

Effect of Heat Treatment on the Dispersion of the Magnetic Anisotropy of MnSb Nanoinclusions Embedded in Thin GaMnSb Films

We observed a temperature-controlled increase in the magnetic anisotropy and its dispersion in thin GaMnSb films with MnSb nanoinclusions obtained by pulsed laser deposition. The data of transmission electron microscopy indicate that in the samples, a transition of the crystalline structure of magnetic MnSb nanoinclusions from hexagonal (spatial group (sp. gr.) P6{sub 3}/mmc) to cubic (sp. gr. F-43m) takes place. Analysis of the temperature dependences of the magnetic moment m(T), measured using a SQUID magnetometer, obtained for both unannealed and annealed samples cooled in a zero magnetic field and a magnetic field of 10 kOe, indicates that this mechanism is not unique. In unannealed samples, the distribution of the magnetic anisotropy of MnSb nanoinclusions, determined from the dependences of m(T), is unimodal. In the annealed samples, the same dependence becomes multimodal. This means that several thermally activated processes occur in the samples during annealing, resulting in several “populations” of nanoinclusions present in the annealed thin films. The contribution to the increase in the magnetic anisotropy during annealing can result in the structural phase transition, the mismatch of the crystal lattices between MnSb and GaSb, an increase in the average volume of MnSb nanoinclusions, and a change in their stoichiometry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗