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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Flat-plate solar-array project. Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

The engineering design, fabrication, assembly, operation, economic analysis, and process support R and D for an Experimental Process System Development Unit (EPSDU) are reported. About 95% of purchased equipment is received and will be reshipped to the West Coast location. The Data Collection System is completed. In the area of melting/consolidation, to the system using silicon powder transfer, melting and shotting on a pseudocontinuous basis is demonstrated. It is proposed to continue the very promising fluid bed work.

Source record↗
NASA NTRS1982

Electronic beam steering of semiconductor injection lasers

A theoretical analysis of the problem of beam steering is presented. The required modifications of the dielectric constant profile of the laser structure were derived. A practical method for implementing the needed modifications is outlined.

Katz, J.↗
NASA NTRS1982

Power combining of semiconductor lasers: A review

Several methods of coherent power combining are described and compared. A comparison is also made between coherent and incoherent power combining, and important operational characteristics are considered. It is found that in communication links with demanding requirements coherent power combining is necessary.

Katz, J.↗
NASA NTRS1982

Transient behavior of an actively mode-locked semiconductor laser diode

Experimental investigation was carried out to study the transient regimes during the buildup and decay of the active mode-locked state in a laser diode. The mode locking was achieved through a sinusoidal modulation of the diode current with the laser in an external cavity. The pulse shape evolution and the time constants for the buildup and decay were determined.

Auyeung, J. C.↗
NASA NTRS1982

Total-dose radiation effects data for semiconductor devices, volume 3

Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

Price, W. E.↗
NASA NTRS1982

Investigation of semiconductor clad optical waveguides

Glass waveguides are studied because of the ease and economy of fabricating devices in glass. All calculations are based on the assumption of a glass guide and substrate, but the effects being studied will occur on other materials if the proper refractive indices are used in the calculations.

Batchman, T. E.↗
NASA NTRS1983

Experiment requirements and implementation plan (Erip) for semiconductor materials growth in low-G environment

The MEA-2 A facility was used to test the effect of the low gravity environment on suppressing convective mixing in the growth of Pb(1-x)Sn(x)Te crystals. The need to eliminate convection, the furnace characteristics and operation that will be required for successful experimental implementation, and to the level that is presently known, the measured physical properties of the Pb(1-x)Sn(x)Te system were discussed. In addition, a brief background of the present and potential utilization of Pb(1-x)Sn(x)Te is given. Additional experiments are anticipated in future MEA-A, improved MEA and other dedicated materials processing in space flight apparatus.

Crouch, R. K.↗
NASA NTRS1983

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.

Nishino, S.↗
NASA NTRS1985

Semiconductor Laser Phased Array

Oscillations synchronized and modulated individually for beam steering. Phased array of GaAs infrared lasers put out powerful electronically-steerable coherent beam. Fabricated as integrated circuit on GaAs chip, new device particularly suited to optical communications, optical data processing and optical detection and ranging systems.

Katz, J.↗
NASA NTRS1984

Development of long wavelength semiconductor diode lasers near 28 microns for use in infrared heterodyne spectrometers

The development of tunable diode lasers operating in the 28 micrometers spectral region for use in infrared heterodyne spectrometers is reported. A process capable of yielding lasers emitting 500 micron W of multimode power, 112 micron W in a true single mode and true single mode operation at laser currents of up to 35% above threshold was developed. Results were obtained from narrow mesastripe (20 micrometer wide) short cavity (120 micrometer length) laser configurations. Six stripe geometry lasers, with a variety of cavity widths and lengths were delivered. The techniques to fabricate such devices was obtained and the long term reliability of such lasers by reproducible electrical and optical output characteristics fabrication from lasers are demonstrated.

Linden, K. J.↗
NASA NTRS1980

Low cost solar array project. Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

Technical activities are reported in the design of process, facilities, and equipment for producing silicon at a rate and price comensurate with production goals for low cost solar cell modules. The silane-silicone process has potential for providing high purity poly-silicon on a commercial scale at a price of fourteen dollars per kilogram by 1986, (1980 dollars). Commercial process, economic analysis, process support research and development, and quality control are discussed.

Source record↗
NASA NTRS1983

Single event upset (SEU) of semiconductor devices - A summary of JPL test data

The data summarized describe single event upset (bit-flips) for 60 device types having data storage elements. The data are from 15 acceleration tests with both protons and heavier ions. Tables are included summarizing the upset threshold data and listing the devices tested for heavy ion induced bit-flip and the devices tested with protons. With regard to the proton data, it is noted that the data are often limited to one proton energy, since the tests were usually motivated by the engineering requirement of comparing similar candidate devices for a system. It is noted that many of the devices exhibited no upset for the given test conditions (the maximum fluence and the maximum proton energy Ep are given for these cases). It is believed, however, that some possibility of upset usually exists because there is a slight chance that the recoil atom may receive up to 10 to 20 MeV of recoil energy (with more energy at higher Ep).

Nichols, D. K.↗
NASA NTRS1984

Coupling mechanism of gain-guided integrated semiconductor laser arrays

It is shown that a gain-guided laser array couples via propagating fields rather than the evanescent mode coupling typically responsible for directional coupling in passive (directional couplers) and active (laser array) devices. It is shown that these phase-locked modes exhibit an interference pattern, in the junction plane, which arises from the curvature of the phase fronts of optical fields of the interacting lasers. The experimental results are interpreted with the aid of a simple theoretical model, and the effect of the observed mode pattern on the coupling of gain-guided lasers is discussed.

Kapon, E.↗
NASA NTRS1984

Coupled parallel waveguide semiconductor laser

The operation of a new type of tunable laser, where the two separately controlled individual lasers are placed vertically in parallel, has been demonstrated. One of the cavities ('control' cavity) is operated below threshold and assists the longitudinal mode selection and tuning of the other laser. With a minor modification, the same device can operate as an independent two-wavelength laser source.

Katz, J.↗
NASA NTRS1984

Single contact tailored gain phased array of semiconductor lasers

A single contact tailored gain-guided array is demonstrated in which the gain profile across the array is made strongly asymmetric by varying the width of the contact stripes. A proton isolated arary of six (GaAl)As lasers with 5-micron separations and widths varying linearly between 3 and 8 microns had a single lobed far field 2 deg wide, close to the diffraction limit for a single supermode. Fabrication of this device is simple, and suited to large-scale processing techniques. It is also shown that in such an asymmetric gain-guided array the fundamental mode is favored over higher order modes, and that higher order modes can have single lobed far-field patterns differing only slightly from that of the fundamental.

Lindsey, C. P.↗