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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobility of 609 cm{sup 2} V{sup −1} s{sup −1}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Plasmons in graphene on uniaxial substrates

Placing graphene on uniaxial substrates may have interesting application potential for graphene-based photonic and optoelectronic devices. Here, we analytically derive the dispersion relation for graphene plasmons on uniaxial substrates and discuss their momentum, propagation length, and polarization as a function of frequency, propagation direction, and both ordinary and extraordinary dielectric permittivities of the substrate. We find that the plasmons exhibit an anisotropic propagation, yielding radially asymmetric field patterns when a point emitter launches plasmons in the graphene layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Direct comparison of graphene devices before and after transfer to different substrates

The entire graphene field-effect-transistor devices first fabricated on SiO{sub 2}/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the transfer are measured to calculate the mobility for a direct comparison. After transferred to different SiO{sub 2}/Si wafers, the mobility, generally, is comparable, and the defect density does not show any significant increase, which indicates the degradation due to the transfer process itself is minimal. The same method can be applied to transfer graphene devices to any arbitrary substrates (e.g., SrTiO{sub 3} or STO). The transfer method developed here not only eliminates the need to locate single-layer graphene on non-SiO{sub 2}/Si substrates for patterning but also provides a convenient way to study the effects of various substrates on graphene electronic properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Magnetic anisotropy and order structure of L1{sub 0}-FePt(001) single-crystal films grown epitaxially on (001) planes of MgO, SrTiO{sub 3}, and MgAl{sub 2}O{sub 4} substrates

L1{sub 0}–FePt(001) single-crystal films were grown epitaxially on SrTiO{sub 3}(001), MgAl{sub 2}O{sub 4}(001), and MgO(001) substrates. Their uniaxial magnetic anisotropy K{sub u} and the order structure were examined for the film thickness t range of 2–14 nm. All series of films show large K{sub u} of 4 × 10{sup 7} erg/cm{sup 3} in the thickness range higher than 10 nm, with order parameter S of 0.8 and saturation magnetization M{sub s} of 1120 emu/cm{sup 3}. K{sub u} decreased gradually as t decreased. The K{sub u} reduction was considerable when t decreased from 4 nm to 2 nm. No marked difference in the thickness dependence of K{sub u} was found in any series of films, although the lattice mismatch between FePt and the substrates was markedly different. K{sub u} reduction showed good agreement with the reduction of S for the films on MgAl{sub 2}O{sub 4} and MgO. The K{sub u} ∼ S{sup 2} plot showed an almost linear relation, which is in good agreement with theoretical predictions. Transmission electron microscopy images for a FePt film on MgO substrate revealed that the lattice mismatch between FePt(001) and MgO(001) was relaxed in the initial 1 or 2 layers of FePt(001) lattices, which is likely to be true also for two other series of films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Co{sub 2}FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

10 nm and 50 nm Co{sub 2}FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T{sub a}), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T{sub a}, while the uniaxial anisotropy field is nearly unaffected by T{sub a} within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T{sub a}. Finally, the FMR linewidth decreases when increasing T{sub a}, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10{sup −3} and 1.3×10{sup −3} for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation

A dramatically enhanced self-assembly of GeSi quantum dots (QDs) is disclosed on slightly miscut Si (001) substrates, leading to extremely dense QDs and even a growth mode transition. The inherent mechanism is addressed in combination of the thermodynamics and the growth kinetics both affected by steps on the vicinal surface. Moreover, temperature-dependent photoluminescence spectra from dense GeSi QDs on the miscut substrate demonstrate a rather strong peak persistent up to 300 K, which is attributed to the well confinement of excitons in the dense GeSi QDs due to the absence of the wetting layer on the miscut substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)

A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A resonant sensor composed of quartz double ended tuning fork and silicon substrate for digital acceleration measurement

Presented in this paper is a micro-resonant acceleration sensor based on the frequency shift of quartz double ended tuning fork (DETF). The structure is silicon substrate having a proof mass supported by two parallel flexure hinges as doubly sustained cantilever, with a resonating DETF located between the hinges. The acceleration normal to the chip plane induces an axial stress in the DETF beam and, in turn, a proportional shift in the beam resonant frequency. Substrate is manufactured by single-crystal silicon for stable mechanical properties and batch-fabrication processes. Electrodes on the four surfaces of DETF beam excite anti-phase vibration model, to balance inner stress and torque and imply a high quality factor. The sensor is simply packaged and operates unsealed in atmosphere for measurements. The tested natural frequency is 36.9 kHz and the sensitivity is 21 Hz/g on a nominally ±100 g device, which is in good agreement with analytical calculation and finite element simulation. The output frequency drifting is less than 0.5 Hz (0.0014% of steady output) within 1 h. The nonlinearity is 0.0019%FS and hysteresis is 0.0026%FS. The testing results confirm the feasibility of combining quartz DETF and silicon substrate to achieve a micro-resonant sensor based on simple processing for digital acceleration measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Induced lattice strain in epitaxial Fe-based superconducting films on CaF{sub 2} substrates: A comparative study of the microstructures of SmFeAs(O,F), Ba(Fe,Co){sub 2}As{sub 2}, and FeTe{sub 0.5}Se{sub 0.5}

The microstructures of SmFeAs(O,F), Ba(Fe,Co){sub 2}As{sub 2}, and FeTe{sub 0.5}Se{sub 0.5} prepared on CaF{sub 2} substrates were investigated using transmission electron microscopy. The SmFeAs(O,F)/CaF{sub 2} interface is steep, without a disordered layer. By contrast, a chemical reaction occurs at the interface in the cases of Ba(Fe,Co){sub 2}As{sub 2} and FeTe{sub 0.5}Se{sub 0.5}. The reaction layers are located on opposite sides of the interface for Ba(Fe,Co){sub 2}As{sub 2} and FeTe{sub 0.5}Se{sub 0.5}. We found that the lattice distortion of the three superconducting films on the CaF{sub 2} substrates enhances the T{sub C} values compared with films prepared on oxide substrates. The origin of this lattice deformation varies depending on the superconducting material.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Hybrid stretchable circuits on silicone substrate

When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where commercial electronic components can be mounted on a stretchable circuit board. Similar to printed circuit board development, the components are electrically bonded on the elastic substrate and interconnected with stretchable electrical traces. The substrate—a silicone matrix carrying concentric rigid disks—ensures both the circuit elasticity and the mechanical integrity of the most fragile materials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate

The interaction of the dye molecule N3 (cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4′-dicarbo-xylato) -ruthenium(II)) with the ultra-thin oxide layer on a AlNi(110) substrate, has been studied using synchrotron radiation based photoelectron spectroscopy, resonant photoemission spectroscopy, and near edge X-ray absorption fine structure spectroscopy. Calibrated X-ray absorption and valence band spectra of the monolayer and multilayer coverages reveal that charge transfer is possible from the molecule to the AlNi(110) substrate via tunnelling through the ultra-thin oxide layer and into the conduction band edge of the substrate. This charge transfer mechanism is possible from the LUMO+2 and 3 in the excited state but not from the LUMO, therefore enabling core-hole clock analysis, which gives an upper limit of 6.0 ± 2.5 fs for the transfer time. This indicates that ultra-thin oxide layers are a viable material for use in dye-sensitized solar cells, which may lead to reduced recombination effects and improved efficiencies of future devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Modeling carbon nanotube growth on the catalyst-substrate surface subjected to reactive plasma [ ]

The paper presents a theoretical model to study the growth of the carbon nanotube (CNT) on the catalyst substrate surface subjected to reactive plasma. The charging rate of the CNT, kinetics of electron, ions and neutral atoms, the growth rate of the CNT because of diffusion and accretion of ions on the catalyst nanoparticle inclusion of the issue of the plasma sheath is undertaken in the present model. Numerical calculations on the effect of ion density and temperature and the substrate bias on the growth of the CNT have been carried out for typical glow discharge plasma parameters. It is found that the height of CNT increases with the ion density of carbon ions and radius of CNT decreases with hydrogen ion density. The substrate bias also affects the growth rate of the CNT. The field emission characteristics from the CNTs can be analyzed from the results obtained.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Magnetic anisotropy in ultrathin Fe films on GaAs, ZnSe, and Ge (001) substrates

We discuss magnetic anisotropy parameters of ferromagnetic body-centered cubic (bcc) Fe films grown by molecular beam epitaxy (MBE) on (001) substrates of face-centered cubic (fcc) GaAs, ZnSe, and Ge. High-quality MBE growth of these metal/semiconductor combinations is made possible by the fortuitous atomic relationship between the bcc Fe and the underlying fcc semiconductor surfaces, resulting in excellent lattice match. Magnetization measurements by superconducting quantum interference device (SQUID) indicate that the Fe films grown on (001) GaAs surfaces are characterized by a very strong uniaxial in-plane anisotropy; those grown on (001) Ge surfaces have a fully cubic anisotropy; and Fe films grown on ZnSe represent an intermediate case between the preceding two combinations. Ferromagnetic resonance measurements carried out on these three systems provide a strikingly clear quantitative picture of the anisotropy parameters, in excellent agreement with the SQUID results. Based on these results, we propose that the observed anisotropy of cubic Fe films grown in this way results from the surface reconstruction of the specific semiconductor substrate on which the Fe film is deposited. These results suggest that, by controlling surface reconstruction of the substrate during the MBE growth, one may be able to engineer the magnetic anisotropy in Fe, and possibly also in other MBE-grown ferromagnetic films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

77 NANOSCIENCE AND NANOTECHNOLOGY↗