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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Multiplexed color centers in a silicon photonic cavity array

Entanglement distribution is central to the modular scaling of quantum processors and establishing quantum networks. Color centers with telecom-band transitions and long spin coherence times are suitable candidates for long-distance entanglement distribution. However, high-bandwidth memory-enhanced quantum communication is limited by high-yield, scalable creation of efficient spin-photon interfaces. Here, we develop a silicon photonics platform consisting of arrays of bus-coupled cavities. The coupling to a common bus waveguide enables simultaneous access to individually addressable cavity-enhanced T center arrays. We demonstrate frequency-multiplexed operation of two T centers in separate photonic crystal cavities. In addition, we investigate the cavity enhancement of a T center through hybridized modes formed between physically distant cavities. Our results show that bus-coupled arrays of cavity-enhanced color centers could enable efficient on-chip and long-distance entanglement distribution.

Komza, Lukasz↗
DOE OSTI2025

Telecom-to-visible quantum frequency converter on a silicon nitride chip

Quantum frequency conversion serves a key role in the realization of hybrid quantum networks by interfacing between wavelength-incompatible platforms. Here we present what is believed to be the first quantum frequency converter connecting visible and telecom domains on a silicon nitride (SiN) chip, using Bragg-scattering four-wave mixing to upconvert heralded single photons from 1260 to 698 nm, which covers a 192 THz span. We examine the noise sources in SiN and devise approaches to suppress noise photons at the source and target frequencies to enable measurements at the single-photon level. We demonstrate an on-chip conversion efficiency of 5% in photon flux and describe design modifications that can be implemented to significantly improve it. Our results pave the way for the implementation of complementary metal-oxide-semiconductor (CMOS)-compatible devices in quantum networks.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon

Heterogeneously integrated lasers in the O-band are a key component in realizing low-power optical interconnects for data centers and high-performance computing. Quantum-dot-based materials have been particularly appealing for light generation due to their ultralow lasing thresholds, small linewidth enhancement factor, and low sensitivity to reflections. Here, we present widely tunable quantum-dot lasers heterogeneously integrated on silicon-on-insulator substrate. The tuning mechanism is based on Vernier dual-ring geometry, and a 47 nm tuning range with 52 dB side-mode suppression ratio is observed. These parameters show an increase to 52 nm and 58 dB, respectively, when an additional wavelength filter in the form of a Mach–Zehnder interferometer is added to the cavity. The Lorentzian linewidth of the lasers is measured as low as 5.3 kHz.

Malik, Aditya (ORCID:0000000334487577)↗
DOE OSTI2020

Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). In this work, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to theδ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. Furthermore, the carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

2D material↗
DOE OSTI2022

Compressive properties of silicone Bouligand structures

Abstract This article presents an examination of silicone, Bouligand lattices in compression. Appearing frequently in biological organisms and manufacturing design, Bouligand structures comprise layers of parallel strands or fibers oriented in a helical fashion. They can exhibit exceptional fracture resistance when composed of rigid or composite materials. The behavior of elastomeric Bouligand structures, however, is less well understood. Additively manufactured (AM) elastomeric lattices have applications in stress mitigation, medical devices, and soft robotics. This article demonstrates that Bouligand structures are a useful addition to the design space of AM elastomers. By adjusting the layer-rotation parameters, lattice stress can increase by more than 300% without altering the porosity. Additionally, we introduce path length metrics that help explain the observed relationship between layer rotation and compression response. Impact statement Additive manufacturing (AM) continues to push the boundary of manufacturable structures and enhance the ability to robustly design for specific properties and behaviors. The more we understand the design space of a novel AM microstructure, the greater its application range. In this article, we describe the mechanical behavior of helicoidal, elastomeric lattices and introduce path length metrics to help explain their stress response. We show that these structures can exhibit a large range of mechanical behaviors in compression, making them well suited for applications such as stress mitigation and impact absorption. Additionally, the path length metrics could become useful design tools and may be applicable to a larger set of cellular structures. These findings expand our ability to rapidly design materials with highly specific and customizable properties to meet the needs of modern engineering challenges. Graphical abstract

Van Meerbeek, I. M. (ORCID:000000021258132X)↗
DOE OSTI2024

Triangular cross-section beam splitters in silicon carbide for quantum information processing

Abstract Triangular cross-section color center photonics in silicon carbide is a leading candidate for scalable implementation of quantum hardware. Within this geometry, we model low-loss beam splitters for applications in key quantum optical operations such as entanglement and single-photon interferometry. We consider triangular cross-section single-mode waveguides for the design of a directional coupler. We optimize parameters for a 50:50 beam splitter. Finally, we test the experimental feasibility of the designs by fabricating triangular waveguides in an ion beam etching process and identify suitable designs for short-term implementation.

42 ENGINEERING↗
DOE OSTI2024

Understanding surfaces and interfaces in nanocomposites of silicone and barium titanate through experiments and modeling

Barium titanate (BTO) is a ferroelectric perovskite used in electronics and energy storage systems because of its high dielectric constant. Decreasing the BTO particle size was shown to increase the dielectric constant of the perovskite, which is an intriguing but contested result. We investigated this result by fabricating silicone-matrix nanocomposite specimens containing BTO particles of decreasing diameter. Furthermore, density functional theory modeling was used to understand the interactions at the BTO particle surface. Combining results from experiments and modeling indicated that polymer type, particle surface interactions, and particle surface structure can influence the dielectric properties of polymer-matrix nanocomposites containing BTO.

composite↗
DOE OSTI2025

Curing inhibition and shelf stability in silicone formulations for direct ink writing

Various potential hydrosilylation inhibitors were incorporated into a silicone formulation for 3D printing. Different inhibitors resulted in peak cure temperatures from 42.8 to 180.3°C. The curing behavior of formulations with 1-ethynyl-1-cyclohexanol (ETCH), which exhibited a peak cure temperature of 98.4°C, was characterized for different ETCH concentrations and storage conditions. The curing was modeled using time temperature superposition, revealing an activation barrier of 89 kJ/mol. Overall, characterization resulted in a conservative recommended shelf life of 90 days. In conclusion, these studies offer insights into the stability of these formulations and the importance of inhibition for producing reliable, printable inks.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Replacing photomultiplier tubes with silicon photomultipliers for nuclear safeguards applications

Photomultiplier tubes (PMTs) have been used for decades as the default light detection technology for scintillator-based radiation monitors. PMTs come with a handful of disadvantages, however, including large volume usage, fragility, high-voltage requirements, and susceptibility to magnetic fields. Arrays of silicon photomultipliers (SiPMs) are a possible alternative to PMTs providing similar performance while offering improvements in the areas listed. We focus on straightforward “drop-in replacement” evaluations by imposing a single channel output of the SiPM signal and a backend electronics data acquisition and analysis routine identical to that used for PMTs. In the realm of nuclear safeguards, the primary performance metric for gamma spectroscopy is detector resolution, and for neutron detection it is pulse shape discrimination (PSD) to separate neutron and gamma signals. In this work we present the results of replacing a PMT with a 2” x 2” SiPM array mounted, in turn, to the same 2” x 2” cylindrical sodium iodide (NaI) crystal. The ultimate comparison for this gamma spectrometry is confirmation of uranium enrichment standards, ranging from depleted uranium to 93% highly enriched uranium (HEU), by analyzing the resulting spectra with both a simple integral scaling in key energy regions of the spectrum, as well as with the NaIGEM software package. In addition to the gamma spectroscopy work, we will present the latest results on comparing the PSD capabilities of a 4” x 4” SiPM array to a 5” PMT. As with the gamma spectroscopy evaluations, the light detectors are mounted in turn to the same liter-scale organic scintillators. This neutron-focused work includes evaluation of prototype SiPM readout boards with a single output signal summed over 256 individual SiPM pixels, and evident tradeoffs between PSD capability and fast response.

42 ENGINEERING↗
DOE OSTI2026

Inkjet Printing to Scale Perovskite and Silicon Tandem Solar Cell: Cooperative Research and Development Final Report, CRADA Number CRD-17-00690

The proposed project seeks to develop a method for inkjet printing of the active layer in perovskite solar cells for application in stand-alone products or added to conventional silicon solar cells in a mechanically-stacked tandem configuration. This technology presents significant advanced manufacturing challenges and opportunities in getting to scale, including development of novel uses for printing technologies and development of predictive quality control techniques.

14 SOLAR ENERGY↗
DOE OSTI2020

Search for New Bosons in Gluon-Gluon and Vector Boson Fusion Processes at the LHC and Development of Silicon Module Assembly Techniques for the CMS High Granularity Calorimeter

A search for heavy resonances decaying to a pair of vectors bosons is presented which utilizes events in which a hadronically decaying Z or W boson is identified using jet substructure techniques and large missing transverse momentum is found. Data analyzed were recorded by the Compact Muon Solenoid experiment at the CERN Large Hadron Collider in 2016, 2017, and 2018, and correspond to 137 fb$^{-1}$ . The events are categorized as having arisen from Vector Boson Fusion process or not, and are characterized by their transverse mass distribution. The standard model backgrounds are estimated based on observed yields in control regions. No excess of events above the expected SM background are observed and limits are placed on the production cross section of Radion (spin-0), Wprime (spin-1) and Bulk graviton (spin2) particles. In adiditon, the high luminosity LHC and the CMS HGCAL upgrade are also presented. The assembly techniques and various tests for the Silicon module and the cassette are discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

New Approaches to Low-Cost Scalable Doping of Interdigitated back Contact Silicon Solar Cells (Final Report)

The goal of this project was to develop novel approaches to patterning of dopants in the rear fingers of interdigitated back contact (IBC) Si solar cells to reduce the cost of manufacturing this high-efficiency-potential cell architecture. The work throughout this project can be divided into four categories: (a) development of dopant patterning technique using laser scribed Si contacts masks that are mechanically aligned with ~10 μm resolution to the underlying Si substrate; (b) measuring dopant spreading profiles in the isolation region between n- and p-type dopant fingers during plasma-enhanced chemical vapor deposition (PECVD) of doped hydrogenated amorphous silicon (a-Si:H) via shadow masks, and dopant desorption and re-adsorption during high-temperature annealing; (c) understanding the role of dopant compensation on the shunt resistance in contaminated isolation regions through analysis of defect-enhanced compensation; and (d) simulation and fabrication of passivated two-sided grid and back-contact solar cells to demonstrate the use of direct dopant patterning in cell fabrication. For the passivated two-sided grid solar cells, masked deposition was used to demonstrate an improvement in the blue response of the cell by creating a shallow front emitter. During development of the masked PECVD patterning process, we measured 3-D dopant profiles using secondary ion mass spectrometry. After deposition, in the masked region, the phosphorus dopant tail was >100 µm at concentrations >10 19 cm -3 while the boron dopant tail was shorter. During high-temperature crystallization of doped a-Si:H films to polycrystalline Si (poly-Si), phosphorus atoms spread by desorbing from the poly-Si surface and re-adsorbing onto intrinsic poly-Si on adjacent wafers that were separated by several millimeters. These contamination mechanisms resulted in a decrease in resistivity from ~10 5 Ω·cm for intrinsic poly-Si to ~10 -1 Ω·cm for contaminated poly-Si. Mitigation strategies for each contamination mechanism were developed to maintain a resistivity of ~10 5 Ω·cm between doped fingers. During fabrication of the 209 cells created during this project, it was found that despite contamination of the IBC gap through the abovementioned mechanisms, high shunt resistances and FF ~75% were still reached. Investigation into this led to the discovery of defect-enhanced compensation which exists within highly defective poly-Si when net doping concentrations reach the value of defect density (~10 18 cm -3 for many poly-Si films). Simulations guided us in the fabrication of IBCs and the cells fabricated were able to meet the year-end goals for BP 2 and 3 of 15% and 17% IBC cell efficiency, as well as the BP 4 goal of a 1% absolute increase in efficiency for PERC-like devices. However, the most efficient cell created during this project of 18.6% fell short of the 21% final project target. While the champion device fell short in V oc and J sc , many devices fabricated were able to reach the necessary goals of ~40 mA/cm 2 , ~700 mV, and ~75% FF required for a 21% device. The results generated from this project were disseminated through 11 conference presentations and proceedings. Presentations included oral talks at 2019 IEEE PVSC, 2019 MRS Fall Meeting, 2020 PVSEC-30 and 2021 IEEE PVSC, as well as poster presentations at 2020 IEEE PVSC and 2021 SiPV. The project resulted in 2 peer reviewed publications – one published in IEEE Journal of Photovoltaics and one in ACS Applied Energy Materials. The information gained in this project will aid in development of improved processes for fabrication of high-efficiency solar cells and other areas of the semiconductor device industry as well. The IBC cells will also pave the way for higher efficiency tandem devices. Through further manufacturing of high-efficiency solar cells, more of the world’s energy demands can be met through renewable sources, helping to stave off the worst effects that may come about from global climate change.

14 SOLAR ENERGY↗
DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗
DOE OSTI2022

Epoxy / Silicone Potting Material Removal for Greater Recovery of Circuit Boards

This report documents an exploratory research project, “Epoxy/Silicone Potting Material Removal for Greater Recovery of Circuit Boards,” that investigated micro abrasion and laser ablation as potential cost effective methods for removal of epoxy and silicone potting material from printed circuit boards (PCBs) to expose components for testing and repair. The ability to cost effectively remove such PCB potting materials will improve PCB repair, remanufacture, and reuse opportunities with potential for sizable reductions in material use, E-waste, and energy. Laser ablation was identified as a method potentially warranting further investigation, in particular for epoxy based potting materials.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Synthesis and Characterization of Silicon Carbide Ceramic Composites with CeO 2 Powder

This study pioneers the fabrication and characterization of silicon carbide (SiC) containing cerium dioxide (CeO 2 ). CeO 2 powder was tested as a surrogate for actinide oxide waste forms such as uranium dioxide (UO 2 ) and plutonium dioxide (PuO 2 ). Several syntheses were evaluated with varying amounts of preceramic polymer (SMP-10 resin) and CeO 2 containing either SiC fiber, carbon fiber, or no fibers. Scanning electron microscopy (SEM) was used to characterize morphology and compositional differences, and energy-dispersive x-ray spectroscopy (EDS) was used to provide semiquantitative elemental analysis. In addition, each sample was characterized by density, powder x-ray diffraction (pXRD), and Raman spectroscopy. Samples containing nearly more than four times CeO 2 powder than SMP-10 resin by mass had the best properties. This research establishes a unique synthesis for SiC containing high concentrations of CeO 2 powder to illustrate how it may be managed as a potential waste form.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2022

Modification of a Silicon Photomultiplier for Reduced High Temperature Dark Count Rate

In this work we present a novel method for improving the high-temperature performance of silicon photomultipliers (SiPMs) via focused ion beam (FIB) modification of individual microcells. The literature suggests that most of the dark count rate (DCR) in a SiPM is contributed by a small percentage (<5%) of microcells. By using a FIB to electrically deactivate this relatively small number of microcells, we believe we can greatly reduce the overall DCR of the SiPM at the expense of a small reduction in overall photodetection efficiency, thereby improving its high temperature performance. In this report we describe our methods for characterizing the SiPM to determine which individual microcells contribute the most to the DCR, preparing the SiPM for FIB, and modifying the SiPM using the FIB to deactivate the identified microcells.

42 ENGINEERING↗
DOE OSTI2022

Large-Scale Additive Manufacturing of Silicon Carbide with Process Monitoring

This report summarizes new capabilities in additive manufacturing (AM) of large-scale silicon carbide (SiC) components under the Advanced Materials and Manufacturing Technologies (AMMT) program. SiC is a promising material that is being considered for many advanced reactor designs due to its high temperature strength, radiation tolerance, minimal neutron absorption, and oxidation resistance [1-8]. One of the primary limitations to using SiC as an in-core structural material is the inability to fabricate large SiC components with complex geometries. While under the former Transformational Challenge Reactor (TCR) program, ceramic AM systems at the Oak Ridge National Laboratory (ORNL) were limited in the quantity and overall size achievable for producing ceramic AM components. To address this, ORNL has improved its infrastructure for binder jet and chemical vapor infiltration (CVI) processes with cutting-edge equipment coming online in a newly renovated laboratory space capable of producing larger components and higher throughput without compromise on part size. This report details the laboratory renovation progress, focusing specifically on the DesktopMetal (formerly ExOne) X25Pro binder jet, a large scale CVI furnace, and the added functionality of a software tool called Peregrine for quality assurance and control purposes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Silicon Tetrafluoride Vapor Pressure Study

The vapor pressure (VP) of silicon tetrafluoride (SiF4) was evaluated using three different cryogenic cold baths and multiple pressure transducers (PTs). Through this experiment, the known range of VP has been extended to a low temperature of 122 K. A functional relationship for the VP has been developed for the range between 122 and 159.6 K. This relationship was also used to estimate a VP value at 88 K, which was below observable levels with a 0.1 torr gauge.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗