Properties of metal-polymer-silicon thin film structures.
Metal-polymer-metal and metal-polymer-silicon thin film structures analysis for polymers bulk properties and insulator-silicon interface, noting dipole-like relaxation
Chuang, Y. S.↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The effect of lithium doping on silicon solar cells
Evaluation of lithium-doped silicon solar cells and kinetics of lithium in silicon
Downing, R. G.↗
Process manual for pyrolitic silicon nitride deposition
Pyrolytic deposition of silicon nitride films on silicon substrates for use as gate dielectric of metal oxide semiconductors
Source record↗
Production of high purity silicon carbide Patent
Producing high purity silicon carbide on carbon base by hydrogen reduction of silicon tetrachloride
Jewell, R. A.↗
Apparatus for producing high purity silicon carbide crystals Patent
Device for producing high purity silicon carbide on carbon base by hydrogen reduction of silicon tetrachloride
Jewell, R. A.↗
Ion implantation reduces radiation sensitivity of metal oxide silicon /MOS/ devices
Implanting nitrogen ions improves hardening of silicon oxides 30 percent to 60 percent against ionizing radiation effects. Process reduces sensitivity, but retains stability normally shown by interfaces between silicon and thermally grown oxides.
Source record↗
Properties of ablation and insulation materials. Volume 3 - Thermal and mechanical properties of low-density phenolic- nylon and silicone-phenolic ablators
Mechanical and thermodynamic properties of low density ablative materials and honeycombs including silicone-phenolic resin and phenolic glass honeycombs of phenolic silicone and nylon
Pears, C. D.↗
Silicon difluoride, a carbene analog - Its reactions and properties
Silicon difluoride reactions and properties, describing production from commercial silicon tetrafluoride and versatility of reactions with organic and inorganic compounds
Margrave, J. L.↗
Oxygen-layer structure improves lithium-doped silicon solar cells
Technique fabricates hybrid structure utilizing low oxygen silicon as bulk cell material and shallow overlay of silicon with high oxygen concentration.
Iles, P. A.↗
Bondability of RTV silicon rubber
Glow discharge method for producing a bondable Room Temperature Vulcanizing (RTV) silicone is described. Mechanical and chemical properties of silicone specimens are described. Theory concerning the relationship between surface characteristics and bondability is examined with respect to the polymer specimen.
Delollis, N. J.↗
Some major results of the Fourth Annual Conference on Effects of Lithium Doping on Silicon Solar Cells
Lithium doped silicon solar cells having dimensions as large as 12 sq cm are now possible, due to significantly improved boron-diffusion techniques. A large increase was observed in the short circuit current measured in tungsten light for cells that were fabricated using the improved diffusion techniques as compared with previous cells, indicating a preservation of minority carrier diffusion length in the base region of the former cells. Sintering of the contacts of lithium doped cells fabricated from Lopex silicon resulted in large increases in maximum power, mostly due to an open circuit voltage improvement, over non-sintered cells. Efficiencies as high as 12.8% were observed, with the average efficiency being about 11.9%.
Berman, P. A.↗
Experimental and computer studies of the radiation effects in silicon solar cells
A summary of selected experimental results obtained on lithium-diffused bulk silicon is presented. Particular emphasis is placed on the radiation-induced degradation and thermal annealing of minority carriers in bulk silicon because solar cell output is related to the minority carrier lifetime. The temperature dependence of the minority carrier lifetime indicates the density and energy levels of the recombination centers and provides clues to their identity. Electron spin resonance and infrared absorption techniques are used to investigate the introduction and anneal of three specific radiation induced defects, which are thought to contribute to the recombination process.
Leadon, R. E.↗
Development of a silicone ablator for high-heat-flux and high-shear-rate condition
A silicone material was developed which gives suitable ablative protection in the high heat flux, high shear environments encountered in severe reentry applications, such as nose cones for ballistic vehicles and protection of leading edges or other critical areas of a vehicle. In addition, the ease of handling, low application cost, and room temperature cure make such a silicon material suitable nozzles for the large rockets necessary for vehicle launching. The development of this product is traced from the selection of suitable polymers through the choice of fillers and the finalization of filler loadings.
Campbell, R. A.↗
Silicon solar cell efficiency: Practice and promise
The maximum efficiency of silicon solar cells was calculated and yielded a value near 18%. Additionally, the performance of these high efficiency cells in a synchronous orbit radiation field was calculated and it is suggested that these cells would be superior to present silicon cells. The performance of conventional cells was analyzed and several areas in which performance gains may be achieved are discussed. These areas include improvements in diffused region profile, in reduction of excess forward currents in cells made from low resistivity material, and in the theory for describing complex solar cell structures.
Brandhorst, H. W., Jr.↗
A study of irradiation-induced defects in silicon using low temperature photoluminescence
Irradiation-induced defects in silicon, using low temperature photoluminescence as a probe of defect properties were investigated. The goal of this research was to gain new understanding of defects which degrade solar cell characteristics in a radiation environment. In this regard, an important aspect of this program was a study of radiation damage and annealing in lithium doped silicon, which is useful in reducing solar cell degradation. Luminescence was used to study defects because this property reveals electron transitions through a number of defect energy levels at any given annealing stage; the luminescence spectra give excellent resolution of many defect energy levels, and these measurements can be used to give defect symmetry in the lattice, impurity dependence, and annealing properties.
Streetman, B. G.↗
The response of a 0.03-cm silicon detector to a mixed neutron and gamma field as a function of shield material and thickness
The neutron and gamma radiation from a MHW-RTG was used to evaluate the total response of a shielded 0.3-mm silicon detector. The generator employs a 2200 W(th) PuO2 heat source concept known as the HELIPAK. The total integrated neutron and gamma ray fluxes at 100 cm away from the source along the radial direction were 1.67 x 1,000 n/sq cm/s and 1.49 x 10,000 gamma sq cm/s, respectively. Experimental values of the response function of the shielded silicon detector were used to determine the total counting rates due to photons at bias energies ranging from 50 to 200 keV. For neutrons, analytically computed response functions were used to determine the total counting rates at the same bias energies. It was found that for an aluminum shield the neutrons are not significant, regardless of the thickness of the shield. However, the magnitude of the total counting rate due to neutrons increases with increased atomic number of the shield and becomes comparable to the counting rate due to photons for a platinum shield thickness of 5 cm.
Taherzadeh, M.↗
The silicon vidicon: Integration, storage and slow scan capability - Experimental observation of a secondary mode of operation.
Description of the performance of the silicon diode array vidicon - an imaging sensor which possesses wide spectral response, high quantum efficiency, and linear response. These characteristics, in addition to its inherent ruggedness, simplicity, and long-term stability and operating life make this device potentially of great usefulness for ground-base and spaceborne planetary and stellar imaging applications. However, integration and charged storage for periods greater than approximately five seconds are not possible at room temperature because of diode saturation from dark current buildup. Since dark current can be reduced by cooling, measurements were made in the range from -65 to 25 C. Results are presented on the extension of integration, storage, and slow scan capabilities achievable by cooling. Integration times in excess of 20 minutes were achieved at the lowest temperatures. The measured results are compared with results obtained with other types of sensors and the advantages of the silicon diode array vidicon for imaging applications are discussed.
Ando, K. J.↗
Lithium - An impurity of interest in radiation effects of silicon.
Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.
Naber, J. A.↗