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At least 865 records · Page 48

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗

Integration of the QMSFRG Database into the HZETRN Code

Accurate nuclear interaction data bases are needed for describing the transport of space radiation in matter including space craft structures, atmospheres, and tissues. Transport models support the identification and development of new material concepts for human and electronic part protection. Quantum effects are manifested in nuclear reactions in several ways including interference effects between terms in the multiple scattering series, the many-body nuclear wave functions (for e.g. the roles of shell structure and Fermi momentum) and nuclear clustering. The quantum multiple scattering fragmentation model (QMSFRG) is a comprehensive model for generating nuclear interaction databases for galactic cosmic ray (GCR) transport. Other nuclear databases including the NUCFRG model and Monte-Carlo simulation codes such as FLUKA, LAHET, HETC, and GEANT ignore quantum effects. These codes fail to describe many important features of nuclear reactions and are thus inaccurate for the evaluation of materials for radiation protection. Previously we have shown that quantum effects are manifested through constructive interference in forward production spectra, the effects of Fermi momentum on production spectra, cluster nuclei knockout, and the nuclear response function. Quantum effects are especially important for heavy ions with mass numbers less than 20 that dominate radiation transport in human tissues and for the materials that are expected to be superior in space radiation protection. We describe the integration of the QMSFRG model into the HZETRN transport code. Integration milestones include proper treatment of odd-even charge-mass effects in nuclear fragmentation and the momentum distribution of nucleon production from GCR primary heavy ions. We have also modified the two-body amplitudes in the model to include nuclear medium effects. In order to include a comprehensive description of the GCR isotopic composition in materials, we have described the isotopic composition of the GCR by extending the 59-isotope version of HZETRN to an 120-isotope version. The isotopic composition of most primary GCR elements (including H, He, C, N, O, Ne, Mg, Si, Ar, Ca, Cr, and Fe) are included in the extended model. We discuss results for the high-energy neutron composition inside materials, and the charge and mass distribution for benchmark GCR problems.

Cucinotta, F. A.↗

Influence of nuclear quantum effects on the electronic properties of amorphous carbon

We carry out quantum simulations to study the physical properties of diamond-like amorphous carbon by coupling first-principles molecular dynamics with a quantum thermostat, and we analyze multiple samples representative of different defective sites present in the disordered network. We show that quantum vibronic coupling is critical in determining the electronic properties of the system, in particular its electronic and mobility gaps, while it has a moderate influence on the structural properties. We find that despite localized electronic states near the Fermi level, the quantum nature of the nuclear motion leads to a renormalization of the electronic gap surprisingly similar to that found in crystalline diamond. We also discuss the notable influence of nuclear quantum effects on band-like and variable-hopping mechanisms contributing to electrical conduction. Our calculations indicate that methods often used to evaluate electron–phonon coupling in ordered solids are inaccurate to study the electronic and transport properties of amorphous semiconductors composed of light atoms.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Radiation effects in GaAs AMOS solar cells

The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

Shin, B. K.↗

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗

Indium Tin-Doped Oxide Interactions with Solvent Radiolysis Products

Transparent conductive oxides (TCOs), such as indium tin-doped oxide (ITO), are ubiquitous as components of electronics and are ideal electrode substrates for catalysis, energy transformation reactions, and energy storage applications. Recently, researchers have recognized their effectiveness as electrode materials for manipulating actinide oxidation states in solution. Despite their popularity as electrode materials, prior studies focused extensively on the direct radiolysis of TCO materials in air and rarely examined these effects within a solution, limiting our fundamental understanding of the interactions between solvent radiolysis products and these substrates in high radiation environments. Here, in this study, we characterize the effects of solvent radiolysis products—arising from the gamma irradiation of water, aqueous nitric acid solutions, and n-dodecane—on the composition, surface speciation, and band structure of ITO thin films on a glass substrate as a function of absorbed dose using UV-visible spectroscopy, scanning electron microscopy, photoelectrochemistry, and X-ray photoelectron spectroscopy. Our work demonstrates that mesoporous thin film electrodes of ITO exposed to gamma radiation in each solvent accumulate defects and exhibit solvent and dose dependent changes to their surface and interfacial properties. These electrodes maintain their electrochemical function and improve their photoelectrochemical performance up to at least 100 kGy of accumulated gamma dose, confirming their utility in solvents exposed to ionizing radiation fields.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Recent radiation effects activities at JPL: Coping with COTS

Radiation effects and testing programs on commercial off-the-shelf (COTS) devices and circuits, which are important for NASA programs, are discussed. Demands for increased performance levels in spacecraft systems is stimulating the use of electronic and photonic devices. Some advances in electronics to reach high performance will result in the miniaturization of devices, which will lead to increased radiation vulnerability.

Barnes, C.↗

Radiation Effects on Current Field Programmable Technologies

Manufacturers of field programmable gate arrays (FPGAS) take different technological and architectural approaches that directly affect radiation performance. Similar y technological and architectural features are used in related technologies such as programmable substrates and quick-turn application specific integrated circuits (ASICs). After analyzing current technologies and architectures and their radiation-effects implications, this paper includes extensive test data quantifying various devices total dose and single event susceptibilities, including performance degradation effects and temporary or permanent re-configuration faults. Test results will concentrate on recent technologies being used in space flight electronic systems and those being developed for use in the near term. This paper will provide the first extensive study of various configuration memories used in programmable devices. Radiation performance limits and their impacts will be discussed for each design. In addition, the interplay between device scaling, process, bias voltage, design, and architecture will be explored. Lastly, areas of ongoing research will be discussed.

Katz, R.↗

Effects of He Ion Irradiation in Simple Borosilicate Glasses for HLW Immobilisation - 20324

High-level radioactive waste (HLW) consists of fission products and minor actinides. Borosilicate glass is the host material of choice in most countries to safely immobilize HLW, followed by eventual geological disposal. HLW glasses will experience both self-heating and self-irradiation effects due to the decay of fission products and minor actinides present therein. During the first 500 years of geological disposal, beta-gamma decay will be the main source of radiation due to short half-lives of fission products, as compared to very long-lived actinides which will be responsible for irradiation over much longer timescales. High-energy alpha particles and alpha recoil nuclei can potentially have significant impact (stored energy, volume change, accumulated dose, chemical durability) on the performance of the wasteform over longer timescales. Thus, to ensure safe and economic disposal over geological periods (10{sup 4} - 10{sup 6} years), the assessment of performance and properties in terms of radiation effects becomes indispensable. This work aims to simulate the effects of alpha decay in radioactive waste glasses. Two international glasses, namely UK 'MW' lithium-sodium borosilicate and Indian sodium-barium borosilicate, which are being used as HLW immobilization matrices by the UK and India respectively, were prepared by a melt-quench method and annealed below their glass transition temperatures. Both glasses were irradiated with 650 KeV He{sup 2+} ions with doses ranging from 10{sup 15} to 10{sup 17} ions/cm{sup 2}. Structural analysis was carried out using electron paramagnetic resonance (EPR) and Raman spectroscopies. First derivative continuous wave EPR spectra were recorded for all pristine and irradiated glass monoliths at room temperature using an X-band (frequency 9.6 GHz) EPR Bruker spectrometer. Results from EPR analyses showed the formation of irradiation induced paramagnetic centers at g ∼ 2.00 in all irradiated glasses. Raman spectra of pristine and irradiated samples were acquired, and showed notable changes in glass structure post-irradiation, with the emergence of a broad Raman band at 1560 cm{sup -1} upon irradiation with high fluences. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

B—N–Bond–Embedded Triplet Terpolymers with Small Singlet–Triplet Energy Gaps for Suppressing Non–Radiative Recombination and Improving Blend Morphology in Organic Solar Cells

Suppressing the photon energy loss (E loss ), especially the non-radiative loss, is of importance to further improve the device performance of organic solar cells (OSCs). However, typical π-conjugated semiconductors possess a large singlet–triplet energy gap (ΔE ST ), leading to a lower triplet state than charge transfer state and contributing to a non-radiative loss channel of the photocurrent by the triplet state. Herein, a series of triplet polymer donors are developed by introducing a BNIDT block into the PM6 polymer backbone. Further, the high electron affinity of BNIDT and the opposite resonance effect of the B—N bond in BNIDT results in a lowered highest occupied molecular orbital (HOMO) and a largely reduced ΔE ST . Moreover, the morphology of the active blends is also optimized by fine-tuning the BNIDT content. Therefore, non-radiative recombination via the terminal triplet loss channels and morphology traps is effectively suppressed. The PNB-3 (with 3% BNIDT):L8-BO device exhibits both small ΔE ST and optimized morphology, favoring more efficient charge transfer and transport. Finally, the simultaneously enhanced V oc of 0.907 V, J sc of 26.59 mA cm –2 , and FF of 78.86% contribute to a champion PCE of 19.02%. Therefore, introducing B—N bonds into benchmark polymers is a possible avenue toward higher-performance of OSCs.

36 MATERIALS SCIENCE↗

Comparison of electron and electronic temperatures in recombining nozzle flow of ionized nitrogen-hydrogen mixture. I, II.

Relaxation of the population distribution of electronic states is studied theoretically for a highly ionized nitrogen-hydrogen mixture expanding through a nozzle wherein the hydrogen content is less than 0.1%. The analysis incorporates quantum-mechanical rate coefficients, and considers the effects of wall cooling and absorption of radiation. Calculations are carried out for a condition produced experimentally. Visible and infrared line radiations from nitrogen and hydrogen were measured with a spectrograph. The geometry and stagnation conditions were those calculated theoretically. The experiment confirms quantitatively the predictions that the electronic excitation temperatures of hydrogen and (3P) core states of nitrogen are higher than the electron temperature, and that (3P) excitation temperatures exhibit maxima within the nozzle.

Park, C.↗

Modeling Relativistic Electron Precipitation Bremsstrahlung X-Ray Intensities at 10-100 km Manned Vehicle Altitudes

Relativisitic electron precipitation (REP) events occur when beams or bunches of relativistic electrons of magnetospheric origin enter the Earth's atmosphere, typically at auroral latitudes. REP events are associated with a variety of space weather effects, including production of transitional and bremsstrahlung radiation, catalytic depletion of stratospheric ozone, and scintillation of transionospheric radio waves. This study examines the intensities of x‐rays produced at airliner, manned balloon, and space reuseable launch vehicles (sRLVs). The monoenergetic beam is modeled in cylindrical symetry using the paraxial ray equation. Bremsstrahlung photon production is calculated using the traditional Sauter‐Elwert cross‐section, providing x‐ray emission spectra differential in energy and angle. Attenuation is computed for a plane‐stratified standard atmosphere, and the loss processes include photoionization, Rayleigh and Compton scattering, electron‐positron pair production, and photonuclear interaction. Peak altitudes of electron energy deposition and bremsstrahlung x‐ray production were calculated for beams of energies from 1 MeV through 100 MeV. The altitude peak of bremsstrahlung deposition was consistently and significantly lower that that of the electron deposition due to the longer mean free paths of x‐rays compared to electrons within the atmosphere. For example, for a nadir‐directed monoenergetic 5 MeV beam, the peak deposition altitude was calculated to be 42 km, but the resulting bremsstrahlung deposition peaked at 25 km. This has implications for crew and passenger safety, especially with the growth of the space tourism industry. A survey of results covering the 1‐100 MeV spectrum for the three altitude ranges of interest will be presented.

Krause, L. Habsh↗

Copper-nickel electroplating of 3D-printed acrylonitrile butadiene styrene for interference and radiation shielding applications

Here, in this study, electromagnetic and radiation shielding structures were fabricated by 3D printing acrylonitrile butadiene styrene (ABS) structures via fused filament fabrication and electroplating with copper (Cu) and nickel (Ni) metals. Prior to electroplating, the printed ABS materials were made conductive by surface electrodeposition of polypyrrole (PPy). ABS adsorbs the pyrrole monomer, which subsequently polymerizes via oxidation forming conductive PPy layer on the printed structures. The successful anchoring of PPy layer can be attributed to its hydrogen bonding and electrostatic interactions with ABS. Thermal analysis, optical, and electron microscopy equipped with energy dispersive X-ray were employed to characterize the printed shielding structures, while the interference and radiation shielding effectiveness were evaluated using a spectrum analyzer and dosimeter, respectively. The interference shielding was found to be effective at 60 ± 5 dB over relatively small frequency range. Shielding was also apparent against gamma and X-ray ionizing rays, but more significantly effective against beta rays. Furthermore, the Cu/Ni coating was able to reduce any heat-induced dimensional changes for the 3D printed ABS substrate without compromising the mechanical integrity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Destructive reverse bias pinning in perovskite/silicon tandem solar modules caused by perovskite hysteresis under dynamic shading

In this work, we demonstrate how perovskite hysteresis can result in permanent reductions in power output in perovskite/silicon tandem modules—including irreversible hotspot-induced damage—from only brief periods of shading. We show that reverse bias events in which a perovskite cell is biased above a threshold voltage—which in this work we find to be as low as –1.1 V—produces a temporary reduction in power output that is of sufficient magnitude to keep the cell pinned in reverse bias after the shading event ends. As a hysteretic phenomena, this crucial failure mode may be overlooked by static models of perovskite-based solar cells. Higher reverse bias voltages exacerbate the temporary reduction in short-circuit photocurrent, which is also sensitive to the level of illumination under reverse bias. Numerical device modelling demonstrates that this effect is consistent with our understanding of perovskite hysteresis as a consequence of mobile ion-electron coupling controlling rates of non-radiative recombination over time. Measurements of the dynamic response of single-junction perovskite cells are extrapolated to two-terminal and four-terminal perovskite/silicon tandem module modelling. We validate these models with measurements from an equivalent electronic circuit that represents a two-terminal perovskite–silicon tandem mini module. Two module-level solutions are discussed that address this issue, which includes increasing the number of bypass diodes and choosing better suited silicon bottom cells with higher shunter resistance in two-terminal tandem modules.

14 SOLAR ENERGY↗

Heavy flavor jet substructure at lepton colliders

We provide a detailed analysis of event-shape observables, namely the energy correlation function and jet angularity, for heavy-flavor jets produced in electron-positron collisions, focusing on quantum chromodynamics (QCD) interactions. Using modern jet substructure techniques, we investigate the dead-cone effect, where QCD radiation is suppressed around a heavy quark within an angle proportional to its mass. Our analysis achieves next-to-leading logarithmic accuracy, combined with partial fixed-order contributions, to improve the description of the transition near the dead-cone threshold. To ensure a comprehensive perspective, we compare our analytical results with predictions from the pythia, herwig, and sherpa Monte Carlo simulations at past and future lepton colliders.

Perturbative QCD↗

Maximum temperatures for radiation from plasma waves.

Upper limits to radiation temperatures from plasma waves for emissions near the fundamental and second harmonic of the electron plasma frequency are derived in terms of effective temperature for plasma waves. Results are obtained that differ from those of Melrose (1970) by a factor that can exceed 40,000 for some plasmas.

Smith, D. F.↗

Vibrational excitation of H2 in intense ultraviolet fluxes

The vibrational excitation of H2 in intense ultraviolet radiation fields is studied. The radiative cascade through bound levels of the ground electronic state, following absorption of Lyman- and Werner-band photons, is modified to include effects of 'multiple pumping' and direct photodissociation from the high vibrational levels. Although the column densities in the excited vibrational levels produced by UV pumping appear too low to explain the recently observed Orion quadrupole emission lines, it is suggested that the far-red lines in the (3-0) and (4-0) bands, produced by UV pumping from O stars near dense molecular clouds, may be detectable.

Shull, J. M.↗