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At least 865 records · Page 48

A crossed molecular beams and computational study on the unusual reactivity of banana bonds of cyclopropane (c-C 3 H 6 ; X 1 A$^{'}_{1}$ ) through insertion by ground state carbon atoms (C( 3 P j ))

The mechanism and chemical dynamics of the reaction of ground electronic state atomic carbon C( 3 P j ) with cyclopropane c-C 3 H 6 (X 1 A$^{'}_{1}$) have been explored by combining crossed molecular beams experiments with electronic structure calculations of the pertinent triplet C 4 H 6 potential energy surface and statistical computations of product branching ratios under single-collision conditions. The experimental findings suggest that the reaction proceeds via indirect scattering dynamics through triplet C 4 H 6 reaction intermediate(s) leading to C 4 H 5 product(s) plus atomic hydrogen via a tight exit transition state, with the overall reaction exoergicity evaluated as 231 ± 52 kJ mol –1 . The calculations indicate that C( 3 P j ) can easily insert into one of the three equivalent C–C ‘banana’ bonds of cyclopropane overcoming a low barrier of only 2 kJ mol –1 following the formation of a van der Waals reactant complex stabilized by 15 kJ mol –1 . The carbon atom insertion into one of the six C–H bonds is also feasible via a slightly higher barrier of 5 kJ mol –1 . Here, these results highlight an unusual reactivity of cyclopropane's banana C–C bonds, which behave more like unsaturated C–C bonds with a π-character than saturated σ C–C bonds, which are known to be generally unreactive toward the ground electronic state atomic carbon such as in ethane (C 2 H 6 ). The statistical theory predicts the overall product branching ratios at the experimental collision energy as 50% for 1-butyn-4-yl, 33% for 1,3-butadien-2-yl, i-C 4 H 5 , and 11% for 1,3-butadien-1-yl, n-C 4 H 5 , with i-C 4 H 5 (230 kJ mol –1 below the reactants) favored by the C–C insertion providing the best match with the experimentally observed reaction exoergicity. The C( 3 P j ) + c-C 3 H 6 reaction is predicted to be a source of C 4 H 5 radicals under the conditions where its low entrance barriers can be overcome, such as in planetary atmospheres or in circumstellar envelopes but not in cold molecular clouds. Both i- and n-C 4 H 5 can further react with acetylene eventually producing the first aromatic ring and hence, the reaction of the atomic carbon with c-C 3 H 6 can be considered as an initial step toward the formation of benzene.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Homogeneous versus MOF-supported catalysis: a direct comparison of catalytic hydroboration with Ni tripodal P 3 E (E = Si, Ge) complexes

The MOF material NU-1000 was employed to host Ni tripodal complexes prepared from new organometallic precursors [HNi(κ 4 (E,P,P,P)-E(o-C 6 H 4 CH 2 PPh 2 ) 3 ], E = Si (Ni-1), Ge (Ni-2). The new heterogeneous catalytic materials, Ni-1@NU-1000 and Ni-2@NU-1000, show the advantages of both homogeneous and heterogeneous catalysts. Finally, they catalyze the hydroboration of aldehydes and ketones more efficiently than the homogeneous Ni-1 and Ni-2, under aerobic conditions and show recyclability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

We investigate the impact of high-dose gamma-ray irradiation on the electrical performance of Ga-polar and N-polar GaN-based p-n diodes grown by metalorganic chemical vapor deposition. We compare the current density-voltage (J-V), capacitance-voltage (C-V), and circular transfer length method (CTLM) characteristics of the p-n diodes fabricated on Ga-polar and N-polar orientations before and after irradiation. The relative turn-on voltage increases for the Ga-polar diodes with increasing irradiation dose, while it increases initially and then starts to decrease for the N-polar diodes. The p-contact total resistance increases for Ga-polar and decreases for N-polar samples, which we attribute to the formation of point defects and additional Mg activation after irradiation. The J-V characteristics of most of the tested diodes recovered over time, suggesting the changes in the J-V characteristics are temporary and potentially due to metastable occupancy of traps after irradiation. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements reveal the existence of different types of initial defects and surface electronic states on Ga-polar and N-polar samples. Gallium vacancies (V Ga ) are dominant defects in Ga-polar samples, while nitrogen vacancies (V N ) are dominant in N-polar samples. The presence of a higher concentration of surface states on Ga-polar surfaces compared to N-polar was confirmed by calculating the band bending and the corresponding screening effect due to opposite polarization bound charge and ionized acceptors at the surface. The difference in surface stoichiometry in these two orientations is responsible for the different behavior in electrical characteristics after gamma-ray interactions.

36 MATERIALS SCIENCE↗

Experimental and theoretical study of hole scattering in RF sputtered p-type Cu 2 O thin films

One of the key materials of interest for p-type oxide semiconductor thin film electronics is cuprous oxide (Cu 2 O), due to its relatively high hole mobility. Here, in this work, we use experiments, analytical models, and density functional theory calculations to study the scattering mechanisms that determine Hall mobility in two Cu 2 O samples. First, we examine a polycrystalline Cu 2 O thin film deposited by RF magnetron sputtering, and second, a single-crystalline Cu2O bulk substrate. Temperature-dependent Hall measurements indicate that neutral impurity and grain boundary scattering are dominant for the polycrystalline Cu 2 O thin film, while phonon scattering is dominant for single-crystalline Cu 2 O. Our first-principles calculations show that the room-temperature intrinsic hole mobility of Cu 2 O is 106 cm 2 V –1 s –1 , indicating the great promise of the material for p-type electronic devices. This intrinsic mobility is limited by phonon scattering, with the most dominant scattering modes having phonon energies of 88.4 and 17.1 meV. These results indicate that the key pathways to increase the hole mobility in Cu 2 O thin films are by reducing the impurity concentration and by increasing grain size. Our work thus sets the stage for the future development of high performance Cu 2 O-based p-type thin film transistors.

36 MATERIALS SCIENCE↗

Benchmarking the semi-stochastic CC( P;Q ) approach for singlet–triplet gaps in biradicals

Here, we recently proposed a semi-stochastic approach to converging high-level coupled-cluster (CC) energetics, such as those obtained in the CC calculations with singles, doubles, and triples (CCSDT), in which the deterministic CC(P;Q) framework is merged with the stochastic configuration interaction Quantum Monte Carlo propagations [J. E. Deustua, J. Shen, and P. Piecuch, Phys. Rev. Lett. 119, 223003 (2017)]. In this work, we investigate the ability of the semi-stochastic CC(P;Q) methodology to recover the CCSDT energies of the lowest singlet and triplet states and the corresponding singlet–triplet gaps of biradical systems using methylene, (HFH) − , cyclobutadiene, cyclopentadienyl cation, and trimethylenemethane as examples.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure

Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I d – V g ) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.

36 MATERIALS SCIENCE↗

Inducing Fe moment in LaFeSi with p-block element substitution

We studied the LaFeSi phase using density functional theory based full-potential linearized augmented plane wave (FP-LAPW) method. Specifically we examined the effect of p-element substitution on the stability and magnetic properties focusing on pathways to induce Fe magnetic moments. We demonstrate that either partial or complete substitutions at the Si 2 c-site by several p-block elements lead to non-zero Fe moments. Our theoretical study shows that partially substituted LaFeSi 1-y Ga y and LaFeSi 1-y Al y are more thermodynamically stable than the fully substituted LaFeGa and LaFeAl. We also found that the P substitutions, either partial or complete, have the most negative formation energies, however the compounds containing phosphorus are non-magnetic. Our work highlights a pathway toward manipulations of the otherwise quenched Fe-moments in LaFeSi-related compounds and help in advancing the potential magnetic functionalities of LaFeX compounds.

36 MATERIALS SCIENCE↗

Study of saturated-absorption resonances on the {sup 3}P{sub 0, 1, 2} – {sup 3}D{sub 1, 2, 3} transitions of magnesium atoms in a hollow-cathode discharge cell

The saturated-absorption resonances on the {sup 3}P{sub 0, 1, 2} – {sup 3}D{sub 1, 2, 3} transitions of magnesium atoms in a hollow-cathode discharge cell are studied. The line width (FWHM) for the observed saturated-absorption resonance on the 3{sup 3}P{sub 0} → 3{sup 3}D{sub 1} transition turns out to be ∼220 MHz. Experiments are performed using a system based on a 766-nm diode laser with amplification and frequency doubling in a nonlinear BiBO crystal. The results obtained are of interest for sub-Doppler cooling on the 3{sup 3}P{sub 2} → 3{sup 3}D{sub 3} transition. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Existence of a flat band in highly correlated metal BaCo 2 P 2

We report on the observation of a flat band situated at the Fermi level E F along with the structural, electrical transport, and magnetic properties of BaCo 2 P 2 that crystallizes in the ThCr 2 Si 2 -type body-center tetragonal structure. This compound has the largest inter-layer pnictide (Pn) distance d Pn–Pn as well as the largest c/a ratio among all the known ACo 2 Pn 2 (A = alkaline earth metal) compounds, where a and c are the tetragonal lattice parameters. Hence, the magnetic and electronic properties of this compound are expected to have a quasi-two-dimensional character. Despite the evidence of the presence of sizable magnetic interactions, magnetic susceptibility χ(T) of BaCo 2 P 2 does not show magnetic ordering down to 1.8 K. The material shows good metallic conduction with a large residual resistivity ratio ρ 300 K /ρ 1.8 K ≈ 70 and a Fermi liquid behavior at low temperature. Kadowaki–Woods ratio R KW of BaCo 2 P 2 suggests the presence of sizable electronic correlations within this system. Additionally, a large many-body enhancement of 2.3 of the experimental density of states D γ (E F ) over the band-structure D band (E F ) is inferred to arise from sizable electron-electron and/or electron-phonon interactions leading to a substantial deviation from the free-electron behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

P-type conductivity in Sn-doped Sb 2 Se 3

Abstract Antimony selenide (Sb 2 Se 3 ) is a promising absorber material for thin-film photovoltaics. However, certain areas of fundamental understanding of this material remain incomplete and this presents a barrier to further efficiency gains. In particular, recent studies have highlighted the role of majority carrier type and extrinsic doping in drastically changing the performance of high efficiency devices (Hobson et al 2020 Chem. Mater. 32 2621–30). Herein, Sn-doped Sb 2 Se 3 bulk crystals are shown to exhibit p-type conductivity using Hall effect and hot-probe measurements. The measured conductivities are higher than those achieved through native defects alone, but with a carrier density (up to 7.4 × 10 14 cm −3 ) several orders of magnitude smaller than the quantity of Sn included in the source material. Additionally, a combination of ultraviolet, x-ray and hard x-ray photoemission spectroscopies are employed to obtain a non-destructive depth profile of the valence band maximum, confirming p-type conductivity and indicating a majority carrier type inversion layer at the surface. Finally, these results are supported by density functional theory calculations of the defect formation energies in Sn-doped Sb 2 Se 3 , showing a possible limit on the carrier concentration achievable with Sn as a dopant. This study sheds light on the effectiveness of Sn as a p-type dopant in Sb 2 Se 3 and highlights avenues for further optimisation of doped Sb 2 Se 3 for solar energy devices.

36 MATERIALS SCIENCE↗

GLAD-M35: a joint P and S global tomographic model with uncertainty quantification

We present our third and final generation joint P and S global adjoint tomography (GLAD) model, GLAD-M35, and quantify its uncertainty based on a low-rank approximation of the inverse Hessian. Starting from our second-generation model, GLAD-M25, we added 680 new earthquakes to the database for a total of 2160 events. New P-wave categories are included to compensate for the imbalance between P- and S-wave measurements, and we enhanced the window selection algorithm to include more major-arc phases, providing better constraints on the structure of the deep mantle and more than doubling the number of measurement windows to 40 million. Two stages of a Broyden–Fletcher–Goldfarb–Shanno (BFGS) quasi-Newton inversion were performed, each comprising five iterations. With this BFGS update history, we determine the model’s standard deviation and resolution length through randomized singular value decomposition.

58 GEOSCIENCES↗

Lignin structural changes and high p -coumaroylation in incipient lignification in moso bamboo

Lignification is a crucial process for strengthening plant tissues, facilitating water transport, and providing defense against pathogens. In the Poaceae family, p-hydroxycinnamic acids are commonly incorporated into lignin, with acylation by p-coumarate (pCA) occurring during lignification. In this study, we performed DFRC and 2D HSQC-NMR analyses to investigate changes in lignin substructures and the degree of lignin pCA-acylation throughout bamboo stem development. Furthermore, immunohistochemical analysis was conducted to elucidate the spatial distribution of lignin substructures within different cell types. Our results revealed that, in young tissues, β–O–4-linked lignin units are predominantly derived from monolignol-pCA conjugates, specifically coniferyl- and sinapyl-pCA. Both lignin structure and the pattern of pCA acylation varied depending on the stage of cell wall formation and the cell type, particularly between vascular fiber cells and parenchyma cells. Based on our results, moso bamboo culms exhibit a distinctive feature during incipient lignification, in which monolignols are predominantly acylated with pCA. As a result, this feature has not been reported in other grasses, suggesting that extensive p-coumaroylation of monolignols plays an important role in the rapid elongation of bamboo culms.

Munekata, Noriaki [Kyoto University (Japan); Unive↗

Computational search for itinerant n -type and p -type magnetic semiconductors: Arsenopyrites as bipolar magnetic semiconductors

We report a computational search for three-dimensional bulk ferromagnetic semiconductors based on itinerant Stoner physics. Stoner-based ferromagnetic semiconductors require an unusual combination of high band edge density of states and moderate transport effective mass. Nonetheless, several potential materials are found. Here, we identify arsenopyrites, exemplified by FeAsS, as materials that, with suitable doping, exhibit ferromagnetic semiconducting behavior for both n- and p-type dopants. The existence of a material that becomes ferromagnetic for both p and n types may enable device concepts, for example, ferromagnetic p–n junction devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

9 Li($\textit{d,p}$) reaction as a specific probe of 10 Li, the paradigm of parity-inverted nuclei around the $\textit{N}$ = 6 closed shell

In this work, we show, within the framework of renormalized nuclear field theory and of the induced reaction surrogate formalism, that the highly debated 10 Li structure, studied in a recent high statistics 9 Li ($\textit{d,p}$) 10 Li one-neutron transfer experiment, is consistent with, or better, requires, the presence of a virtual 1/2 + state of similar single-particle strength than that of the 1/2 – resonance at 0.45 ± 0.03 MeV. Based on continuum spectroscopy self-energy techniques, we find that the physical mechanism responsible for parity inversion in $^{10}_3$Li is the same as that at the basis of the similar phenomenon observed in $^{11}_4$Be and as that needed in 11 Li to have an important $\textit{s}$-wave ground-state component. In particular the strong dynamical coupling between the $s_{1/2}$ and the $d_{5/2}$ states, mediated by the quadrupole vibration of the core 9 Li. A phenomenon which also affects the strength distribution of the $d_{5/2}$ state, in particular, in the energy range of 3–4.5 MeV. Furthermore, this mechanism is also consistent with the (normal) sequence of the $1_{p_{1/2}}$ and $2_{s_{1/2}}$ levels in the $\textit{N}$ = 7 isotones $^{12}_5$B and $^{13}_6$C. The main aim of the present Rapid Communication is that of treating structure and reactions on equal footing and in a common language. In other words, the calculation of the 9 Li ($\textit{d,p}$) 10 Li reaction as a single conceptual step from individual single-particle motion and collective vibrations to absolute double differential cross sections of renormalized virtual and resonant final states, which can be directly compared with experiment.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

New energy for the 133-keV resonance in the 23 Na(p,γ) 24 Mg reaction and its impact on nucleosynthesis in globular clusters

Globular cluster stars exhibit star-to-star anticorrelations between oxygen and sodium in their atmospheres. An improved description of the sodium-destroying 23 Na +p reaction rates is essential to understanding these observations. We present an energy analysis of 24 Mg states based on a new measurement of the 23 Na( 3 He, d) 24 Mg reaction. A key resonance in 23 Na(p, γ) 24 Mg is found to be at $E$ $^{c.m.}_{r}$ = 133(3) keV, 5 keV lower than previously adopted. This finding has a dramatic effect on the 23 Na(p, γ) 24 Mg reaction rate, increasing it by a factor of 2 for the recommended rate. Furthermore, the nucleosynthesis impact of this change is investigated.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Role of low-lying resonances for the 10 Be(p,α) 7 Li reaction rate and implications for the formation of the Solar System

Evidence for the presence of short-lived radioactive isotopes when the Solar System formed is preserved in meteorites, providing insights into the conditions at the birth of our Sun. A low-mass core-collapse supernova had been postulated as a candidate for the origin of 10Be, reinforcing the idea that a supernova triggered the formation of the Solar System. We present a detailed study of the production of 10Be by the ν process in supernovae, which is very sensitive to the reaction rate of the major destruction channel, 10 Be(p,α) 7 Li. With data from recent nuclear experiments that show the presence of a resonant state in 11B at ≈193 keV, we derive new values for the 1 0 Be(p,α) 7 Li reaction rate, which are significantly higher than previous estimates. We show that, with the new 10 Be(p,α) 7 Li reaction rate, a low-mass CCSN is unlikely to produce enough 10 Be to explain the observed 10 Be/ 9 Be ratio in meteorites, even for a wide range of neutrino spectra considered in our models.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Bayesian estimation of the $S$ factor and thermonuclear reaction rate for 16 O(p, γ) 17 F

The 16 O(p, γ) 17 F reaction is the slowest hydrogen-burning process in the CNO mass region. Its thermonuclear rate sensitively impacts predictions of oxygen isotopic ratios in a number of astrophysical sites, including AGB stars. The reaction has been measured several times at low bombarding energies using a variety of techniques. The most recent evaluated experimental rates have a reported uncertainty of about 7.5% below 1 GK. However, the previous rate estimate represents a best guess only and was not based on rigorous statistical methods. We apply a Bayesian model to fit all reliable 16 O(p, γ) 17 F cross section data, and take into account independent contributions of statistical and systematic uncertainties. The nuclear reaction model employed is a single-particle potential model involving a Woods-Saxon potential for generating the radial bound state wave function. The model has three physical parameters, the radius and diffuseness of the Woods-Saxon potential, and the asymptotic normalization coefficients (ANCs) of the final bound state in 17 F. Here, we find that performing the Bayesian S -factor fit using ANCs as scaling parameters has a distinct advantage over adopting spectroscopic factors instead. Based on these results, we present the first statistically rigorous estimation of experimental 16 O(p, γ) 17 F reaction rates, with uncertainties (±4.2%) of about half the previously reported values.

6 ≤ A ≤ 19↗

Bootstrap-determined p values in lattice QCD

We present a general method to determine the probability that stochastic Monte Carlo data, in particular those generated in a lattice QCD calculation, would have been obtained were that data drawn from the distribution predicted by a given theoretical hypothesis. Such a probability, or p -value, is often used as an important heuristic measure of the validity of that hypothesis. The proposed method offers the benefit that it remains usable in cases where the standard Hotelling T 2 methods based on the conventional χ 2 statistic do not apply, such as for uncorrelated fits. Specifically, we analyze q 2 , defined as the correlated χ 2 statistic obtained using an arbitrary covariance matrix estimator, and show how to use the bootstrap as a data-driven method to determine the expected distribution of q 2 for a given hypothesis with minimal assumptions. This distribution can then be used to determine the p -value for a fit to the data. We also describe a bootstrap approach for quantifying the impact upon this p -value of estimating population parameters from a single ensemble of N samples. The overall method is accurate up to a 1 / N bias which we do not attempt to quantify. Published by the American Physical Society 2025

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗