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At least 865 records · Page 48

Modifications of band gap in Si/Ge multilayers through vacuum annealing

In the present paper, important experimental findings and their impact on physical properties of Si/Ge systems are presented with the focus on structural and electronic properties investigations also covering band gap engineering. The use of synchrotron radiation based valence band photoemission spectroscopy technique has been demonstrated which provides the variation in bandgap values as a function of annealing on [Si/Ge]{sub x10} multilayers structure. For this purpose, the required VB offsets are obtained by considering the corresponding VB maximum of as prepared sample as a reference. The bandgap values thus obtained show a gradually decreasing pattern with increasing temperature, which is discussed in terms of the effect of various factors such as: (i) quantum confinement effect normally observed in confined systems (ii) change in the annealing induced intermixing leading to the formation of SiGe alloy and (iii) roughness at the surface/interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Multilayer MgB{sub 2} superconducting quantum interference filter magnetometers

We report two types of all-MgB{sub 2} superconductive quantum interference filter (SQIF) magnetometers that can measure absolute magnetic fields with high sensitivity. In one configuration, the SQIFs were made of 20 multilayer nonplanar all-MgB{sub 2} superconducting quantum interference devices (SQUIDs) connected in parallel with loop areas ranging in size from 0.4 to 3.6 μm{sup 2}. These devices are sensitive to magnetic fields parallel to the substrate and show a single antipeak from 3 to 16 K with a maximum transfer function of ∼16 V/T at 3 K and a field noise of ∼110 pT/Hz{sup 1/2} above 100 Hz at 10 K. In a second configuration, the SQIFs were made with 16 planar SQUIDs connected in parallel with loop areas ranging in size from 4 μm{sup 2} to 25 μm{sup 2} and are sensitive to the magnetic fields perpendicular to the substrate. The planar SQIF shows a single antipeak from 10 to 22 K with a maximum transfer function of 7800 V/T at 10 K and a field noise of ∼70 pT/Hz{sup 1/2} above 100 Hz at 20 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Development of high damage threshold multilayer thin film beam combiner for laser application

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm{sup 2} at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structure determination of a multilayer with an island-like overlayer using hard x-ray photoelectron spectroscopy

We use hard X-ray photoelectron spectroscopy (HAXPES) to obtain the surface structure of a multilayer Au/SiO{sub 2}/Si substrate sample with an island-like overlayer. Photoelectron intensities are measured as a function of incident photon energy (PE) and take-off angle (TOA, measured from the sample surface). The Au layer coverage and Au and SiO{sub 2} layer thicknesses are obtained by the PE dependence, and are used for the following TOA analysis. The Au island lateral width in the cross section is obtained by the TOA dependence, including information about surface roughness, in consideration of the island shadowing at small TOAs. In both cases, curve-fitting analysis is conducted. The surface structure, which consists of layer thicknesses, overlayer coverage and island width, is determined nondestructively by a combination of PE and TOA dependent HAXPES measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Formation of blade and slot die coated small molecule multilayers for OLED applications studied theoretically and by XPS depth profiling

Slot die coaters especially designed for low material consumption and doctor blades were used to process small molecule solutions for organic light-emitting diodes (OLEDs). Optimum process parameters were developed for the large-scale coating techniques to generate stable single and multiple layers only a few nanometers thick. Achieving a multilayer architecture for solution-processed OLEDs is the most challenging step. X-ray photoelectron spectroscopy sputter depth profiling was performed to determine defined interfaces between coated organic layers. Commercially available small molecules NPB (N,N’-Di(1-naphthyl)-N,N’-diphenyl-(1,1’-biphenyl)-4,4’-diamine) and BAlq (Bis(8-hdroxy-2methylquinoline)-(4-phenylphenoxy)aluminum), originally developed for vacuum deposition, were used as hole, respectively electron transport material. Defined double-layers were processed with both scalable coating methods using the orthogonal solvent approach. The use of non-orthogonal solvents resulted in complete intermixing of the material. The results are explained by calculations of solubilities and simulating drying and diffusion kinetics of the small molecule solutions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The modification of the structure of multilayer Co/Pt films by the irradiation with a focused helium ion beam

We report here on the possibility of a local modification of Co/Pt multilayered magnetic films by focused ion beam irradiation. The changes of structural and magnetic properties are experimentally investigated as a function of irradiation fluence. The method is used to form lateral structures with the periods up to 100 nm. The magnetic force microscopy accompanied by Hall effect measurements of the structure indicate the formation of magnetic skyrmion lattices in the absence of Dzyaloshinskii-Moriya interaction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evolution of the interfacial magnetic anisotropy in MgO/CoFeB/Ta/Ru based multilayers as a function of annealing temperature

We report the effect of annealing temperature on the dynamic and static magnetic properties of MgO/CoFeB/Ta/Ru multilayers. Angular resolved ferromagnetic resonance measurement results show that the as-deposited film exhibits in-plane magnetic anisotropy, whereas in the annealed films the magnetic easy-axis is almost along the direction perpendicular to the plane of the layers. The extracted interfacial anisotropy energy, K{sub i}, is maximized at an annealing temperature 225{sup ∘}C, in agreement with the vibrating sample magnetometry results. Although the magnetization is not fully out-of-plane, controlling the degree of the magnetization obliqueness may be advantageous for specific applications such as spin-transfer oscillators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhancement-mode operation of multilayer MoS{sub 2} transistors with a fluoropolymer gate dielectric layer

Enhancement-mode multilayer molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs), which are an immensely important component toward low-power electronics based on a two-dimensional layered semiconductor, are demonstrated using the fluoropolymer CYTOP as a gate dielectric. The fabricated devices exhibit threshold voltage (V{sub TH}) of ∼5.7 V with field-effect mobility (μ{sub FE}) of up to 82.3 cm{sup 2}/V s, and the characteristics are compared with the depletion-mode characteristics of MoS{sub 2} FETs with the cross-linked Poly(4-vinylphenol) gate dielectric (V{sub TH} ∼ −7.8 V). UV photoelectron spectroscopy analysis indicates that increased surface potential due to the surface dipole effect of the fluorine group influences the positive V{sub TH} shift.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Interface structure in nanoscale multilayers near continuous-to-discontinuous regime

Interfacial atomic diffusion, reaction, and formation of microstructure in nanoscale level are investigated in W/B{sub 4}C multilayer (ML) system as functions of thickness in ultrathin limit. Hard x-ray reflectivity (XRR) and x-ray diffuse scattering in conjunction with x-ray absorption near edge spectroscopy (XANES) in soft x-ray and hard x-ray regimes and depth profiling x-ray photoelectron spectroscopy (XPS) have been used to precisely evaluate detailed interfacial structure by systematically varying the individual layer thickness from continuous-to-discontinuous regime. It is observed that the interfacial morphology undergoes an unexpected significant modification as the layer thickness varies from continuous-to-discontinuous regime. The interfacial atomic diffusion increases, the physical density of W layer decreases and that of B{sub 4}C layer increases, and further more interestingly the in-plane correlation length decreases substantially as the layer thickness varies from continuous-to-discontinuous regime. This is corroborated using combined XRR and x-ray diffused scattering analysis. XANES and XPS results show formation of more and more tungsten compounds at the interfaces as the layer thickness decreases below the percolation threshold due to increase in the contact area between the elements. The formation of compound enhances to minimize certain degree of disorder at the interfaces in the discontinuous region that enables to maintain the periodic structure in ML. The degree of interfacial atomic diffusion, interlayer interaction, and microstructure is correlated as a function of layer thickness during early stage of film growth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Active voltage contrast imaging of cross-sectional surface of multilayer ceramic capacitor using helium ion microscopy

We studied active voltage contrast (AVC) imaging using helium ion microscopy (HIM). We observed secondary electron (SE) images of the cross-sectional surface of multilayer ceramic capacitors (MLCCs) with and without a voltage applied to the internal electrodes. When no voltage was applied, we obtained an image reflecting the material contrast between the Ni internal electrode region and the BaTiO{sub 3} dielectric region of the cross-sectional surface of the MLCC. When a voltage was applied, the electrical potential difference between the grounded and the positively biased internal electrodes affected the contrast (voltage contrast). Moreover, attenuation of the SE intensity from the grounded to the positively biased internal electrodes was observed in the dielectric region. Kelvin probe force microscopy (KPFM) measurements of the contact potential difference (CPD) were performed on the same sample. By using the AVC image from the HIM observation and the CPD image from the KPFM measurement, we could quantitatively evaluate the electrical potential. We think that the results of this study will lead to an expansion in the number of applications of HIM.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Efficient and versatile graphene-based multilayers for EM field absorption

We thoroughly investigate the possibility to absorb most (i.e., up to more than 90%) of the incident electro-magnetic radiations in thin multilayered PMMA/graphene structures, thus proposing the technical realization of a device with an operational frequency range in the millimeter-wave domain, i.e., 30 GHz–300 GHz. Our simulations demonstrate the concrete possibility to enhance the field absorption by means of a selective removal and proper micro-pattering within the graphene material, enabling a complete and efficient control of the graphene sheet conductance. This method is applied to design and engineer a class of devices, endowed with a wideband operation capability, showing almost no fluctuations throughout the whole range of mm-wave frequencies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Shock compression response of cold-rolled Ni/Al multilayer composites

Uniaxial strain, plate-on-plate impact experiments were performed on cold-rolled Ni/Al multilayer composites and the resulting Hugoniot was determined through time-resolved measurements combined with impedance matching. The experimental Hugoniot agreed with that previously predicted by two dimensional (2D) meso-scale calculations. Additional 2D meso-scale simulations were performed using the same computational method as the prior study to reproduce the experimentally measured free surface velocities and stress profiles. Finally, these simulations accurately replicated the experimental profiles, providing additional validation for the previous computational work.

36 MATERIALS SCIENCE↗

A multilayer multiconfiguration time-dependent Hartree simulation of the reaction-coordinate spin-boson model employing an interaction picture

The multilayer multiconfiguration time-dependent Hartree method is applied in an interaction picture to simulate dynamics of the spin-boson model in the reaction-coordinate representation. The use of the interaction picture allows a more effective description of correlation effects, especially when the coupling strength between the reaction coordinate and the bath is very strong. Examples show that in most physical regimes the efficiency is improved significantly, in some cases up to several orders of magnitude. This opens up new avenues for studying quantum dynamical problems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers

A single femto-second optical pulse can fully reverse the magnetization of a film within picoseconds. Such fast operation hugely increases the range of application of magnetic devices. However, so far, this type of ultrafast switching has been restricted to ferri-magnetic GdFeCo films. In contrast, all optical switching of ferro-magnetic films require multiple pulses, thereby being slower and less energy efficient. In this study, we demonstrate magnetization switching induced by a single laser pulse in various ferromagnetic Co/Pt multilayers grown on GdFeCo, by exploiting the exchange coupling between the two magnetic films. Table-top depth-sensitive time-resolved magneto-optical experiments show that the Co/Pt magnetization switches within 7 ps. Lastly, this coupling approach will allow ultrafast control of a variety of magnetic films, which is critical for applications.

36 MATERIALS SCIENCE↗

Solid-phase reactive inter-diffusion of Mg/B multilayers

A better understanding of the reaction of Mg and B in the solid-phase regime is needed for the low-temperature synthesis of MgB 2 films. Here in this paper, we study the kinetics of reactive inter-diffusion of Mg and B multilayers on glassy carbon substrates in the temperature range of 400-650°C. Results show that, at these temperatures, inter-diffusion is characterized by a single activation energy of ~0.45eV. The formation of the superconducting MgB 2 phase with critical temperatures of 25–31 K occurs at reaction temperatures of 450°C and above, with the rate of inter-diffusion obeying a power law with a kinetic exponent of ~0.3. This suggests that rate-limiting processes are the nucleation and growth of MgB 2 grains rather than diffusion and interfacial reactions. Implications of these results to the low-temperature synthesis of MgB 2 films are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Precision Flexure Stages Design for a Compact Multilayer Laue Lens Test Bed for Hard X-ray Nanofocusing

Both the Advanced Photon Source (APS) at Argonne National Laboratory (ANL) and the Beijing Synchrotron Radiation Facility (BSRF) at Institute of High Energy Physics (IHEP) have a keen interest in the development of a compact Multilayer Laue Lens (MLL) test bed for hard x-ray nanofocusing. Recently, collaboration between ANL and IHEP, as a part of the Argonne Strategic Partnership Project (SPP) 85J05, has produced designs of precision flexure stages for a compact MLL test bed for hard x-ray nanofocusing using commercial flexural pivots and Argonne developed laminar nanopositioning flexures. Two sets of the new flexure stages will be built with the new designs, one for R&D activities at the BSRF for the new planned 6 GeV high energy photon source (HEPS) and one for upgrade of the existing MLL test bed at the APS x-ray optics test beamline. Mechanical design and preliminary test for the MLL test bed flexure stages for Argonne SPP project 85J05 are presented in this paper.

nanopositioning flexure stage↗

Accurate calculation of equilibrium reduced density matrix for the system-bath model: A multilayer multiconfiguration time-dependent Hartree approach and its comparison to a multi-electronic-state path integral molecular dynamics approach

An efficient and accurate method for computing the equilibrium reduced density matrix is presented for treating open quantum systems characterized by the system-bath model. The method employs the multilayer multiconfiguration time-dependent Hartree theory for imaginary time propagation and an importance sampling procedure for calculating the quantum mechanical trace. The method is applied to the spin-boson Hamiltonian, which leads to accurate results in agreement with those produced by the multi-electronic-state path integral molecular dynamics method.

Physics↗