Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “INSULATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Solid and gas thermal conductivity models improvement and validation in various porous insulation materials

In the past few decades, significant efforts have been made to improve the theoretical understanding of thermal transport mechanisms in thermal insulation materials and push the thermal conductivity's lower limits. However, most works focused singularly on specific types of materials, and the models used for thermal conductivity predictions are diverse - a model that fits one material might not fit others. Here, we improve and unify the gas and solid thermal conductivity models for porous materials. Through experimental characterization of several different materials as well as literature data for other materials, these models are validated. Further, we have also found that the pressure-dependent gas thermal conductivity of most materials can be well fitted by using one or two pore sizes without using a complex pore size distribution. With the refined models, we decompose the effective thermal conductivity of several thermal insulation materials into gas, solid, and radiation contributions. For cellular (polystyrene and polyurethane) foams, the relative contributions from air, solid, and radiation are 58–75%, 3–11%, 16–38%, respectively. For granular porous materials (polyurethane and silica in this work), the contributions from air, solid, and radiation are 45–66%, 34–46%, and 0–8%, respectively. This work is expected to provide guidance on the design and optimization of the next generation of thermal insulation materials, for example, through the effort of reducing gas conduction and radiation in foams and suppressing gas and solid conduction in aerogels.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Critical roles of pores and moisture in sustainable nanocellulose-based super-thermal insulators

In a recent report in Matter, Bergström and co-workers describe a novel thermal transport behavior that subverts this assumption of porous materials. In their work, the authors describe a nanocellulose-based foam that features ultrahigh porosity (> 99.6%) and aligned µm-scale pores (10–100 µm) whose radial thermal conductivity (i.e., perpendicular to the pore alignment) is close to that of free air in the dry state. Furthermore, the radial thermal conductivity of the cellulose-based foam can be reduced to ~14 mW/(m·K) when the relative humidity is ~35%. Super-thermal insulators, which demonstrate a thermal conductivity below that of stationary air (~ 25 mW/(m·K), 20 ºC, 1.0 atm), are needed to minimize heat loss in various applications (e.g., buildings, thermal energy storage tanks, cold chain packaging, etc.) to mitigate the energy crisis and reduce carbon emissions. Introducing pores into a material is a facile and effective way to achieve low thermal conductivity as pores can suppress thermal transport through solids by reducing the cross-sectional area and increasing the tortuosity of the heat transfer pathway. In porous structures there are two kinds of pores: open and closed. While increased porosity can reduce heat conduction through solids with an open porous structure, the improved gas conduction creates a competing effect that simultaneously elevates the heat transfer. Therefore, the thermal conductivity of a material with µm-scale open pores is usually larger than that of stationary air. Reducing the pore size to less than the mean free path of air (~ 70 nm, 20 ºC, 1.0 atm) can effectively reduce gas conduction, enabling the material to achieve a thermal conductivity below that of stationary air. However, high cost of the nanosized raw materials and time-consuming fabrication processes limit the large-scale applications of nanoporous thermal insulators. Meanwhile, closed pores can block heat transport only through the continuous gas phase. As a result, the thermal conductivity of a closed porous structure can theoretically be much smaller than that of stationary air if the solid conduction can also be suppressed by (1) lowering the solid content of the material, (2) reducing the thermal conductivity of the building blocks of the material, and/or (3) increasing interfacial thermal resistance between neighboring building blocks. Most processes used to generate porous structures (e.g., supercritical drying, freeze drying) involve a solvent that escapes the material. Therefore, it is difficult to create pores and isolate them simultaneously, preventing the fabrication of super-thermal insulators with closed pores.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and we discuss relevant experimental data.

25 ENERGY STORAGE↗
DOE OSTI2022

On the mechanism of radiation and thermal-induced degradation of the insulation cables in nuclear power plants-the presence of long-lived polyenyl C-centered radicals

Radiolytically and thermally produced long-lived polyenyl C-centered radicals in the nuclear power plants’ insulation cables are detected and measured after more than 45 months of aging since the irradiation and the thermal treatment. Electron Paramagnetic Resonance (EPR) results of the irradiated Cross-linked Polyethylene (XLPE) and Ethylene Propylene Rubber (EthProRu), used as primary insulation materials at Nuclear Power Plants (NPP), clearly demonstrate the presence of polyenyl radicals along with allyl and peroxyl radicals. The yields of these free radicals are dose-rate dependent. EPR results also show the presence of the long-lived polyenyl along with allyl and peroxyl free radicals in the thermally treated XLPE, and EthProRu. These free radicals can cause a major failure in the performance of these cables in NPPs. Besides, the results showed the enhancement in the oxidation reactions due to the migration of copper ions from the conductor to the bulk of the insulation. Further, this study also shows that the oxidation index (OI) and Elongation at Break (EAB) increases and decreases respectively at higher doses and temperatures.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2019

Demonstration of self-healing barrier films for vacuum insulation panels

This article presents the demonstration of a rapid self-healing system for barrier films of vacuum insulation panels (VIPs). The proposed self-healing films can improve the durability of VIPs by in-situ remediation of film defects. The self-healing concept has seen limited applications in buildings, and the current work is the first proposed application to VIPs. VIPs can attain an order-of-magnitude lower thermal conductivity than traditional foam and fibrous building insulations. The key to the ultra-low thermal conductivity of VIPs is an evacuated core that is fully-encapsulated within impermeable barrier films. Evacuation of the core eliminates the gas conductivity, which is the dominant contributor to heat transfer in traditional insulation materials. Hence, the integrity of the VIP barrier films is critical. The proposed self-healing system can seal accidental cuts and punctures to the barrier films to maintain their impermeability and, hence, the low conductivity of VIPs. Here, the proof-of-principle of a two-part chemical reaction-based self-healing system is presented, including the evaluations of reaction kinetics using chemical-structure analysis and time-dependent viscosity change, and demonstration of self-healing performance via puncture tests in a vacuum pump apparatus. Multiple chemical combinations of epoxies and curing agents were investigated with respect to reaction kinetics and chemical stability. Epon 8111 as an epoxy and poly(ethyelenimine) (PEI) as a curing agent were identified as the optimum chemicals with a curing time of 22 s as evaluated by an agitating stirrer experiment. 1H nuclear magnetic resonance (NMR) spectra analysis identified the curing reaction occurring mainly via the Michael amine-acrylate addition. The measured time-dependent viscosity change of diluted Epon 8111 and PEI solutions agreed well with a gelation model of typical epoxy curing kinetics, which predicted a very fast reaction rate for the undiluted chemicals. Lastly, puncture tests of small-scale film specimens containing Epon 8111 and PEI in a vacuum pump system demonstrated that the self-healing reaction happens very rapidly and the healed films maintain the system vacuum.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Pressure-induced insulator-to-metal transition in the quantum spin liquid candidate lithium ytterbium diselenide

Metallization of quantum spin liquid (QSL) materials has long been considered as a potential route toward unconventional superconductivity. Here, we investigate the pressurization of lithium ytterbium diselenide (LiYbSe 2 ), a three-dimensional QSL candidate with a pyrochlore structure. High-pressure X-ray diffraction (up to 15 GPa) and Raman spectroscopy (up to 48 GPa) reveal no significant structural changes within this pressure range. Remarkably insulating, LiYbSe 2 exhibits a resistance below 10 5 Ω only at pressures exceeding 25 GPa, accompanied by a gradual reduction of band gap upon compression. Interestingly, an insulator-to-metal transition occurs around 68 GPa, and the metallic behavior persists up to 123.5 GPa, the highest pressure achieved in this study. A possible sign of magnetic transitions is also observed. The insulator-to-metal transition in LiYbSe 2 under high pressure presents an ideal platform to explore the pressure effects on QSL candidates of spin-1/2 Yb 3+ systems with various lattice patterns.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Strain-Induced Ferroelectric Topological Insulator

Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI 3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI 3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI 6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Here, our results suggest that CsPbI 3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Disorder enabled band structure engineering of a topological insulator surface

Three-dimensional topological insulators are bulk insulators with Z 2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. Lastly, at native densities in the model Bi 2 X 3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Observation and control of the weak topological insulator state in ZrTe5

Abstract A quantum spin Hall (QSH) insulator hosts topological states at the one-dimensional (1D) edge, along which backscattering by nonmagnetic impurities is strictly prohibited. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to strong topological insulators (STIs). However, the topological side surface is usually not cleavable and is thus hard to observe. Here, we visualize the topological states of the WTI candidate ZrTe 5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap is controlled by external strain, realizing a more stable WTI state or an ideal Dirac semimetal (DS) state. The highly directional spin-current and the tunable band gap in ZrTe 5 will provide an excellent platform for applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Topological current divider in a Chern insulator junction

A Chern insulator is a two-dimensional material that hosts chiral edge states produced by the combination of topology with time reversal symmetry breaking. Such edge states are perfect one-dimensional conductors, which may exist not only on sample edges, but on any boundary between two materials with distinct topological invariants (or Chern numbers). Engineering of such interfaces is highly desirable due to emerging opportunities of using topological edge states for energy-efficient information transmission. Here, we report a chiral edge-current divider based on Chern insulator junctions formed within the layered topological magnet MnBi 2 Te 4 . We find that in a device containing a boundary between regions of different thickness, topological domains with different Chern numbers can coexist. At the domain boundary, a Chern insulator junction forms, where we identify a chiral edge mode along the junction interface. We use this to construct topological circuits in which the chiral edge current can be split, rerouted, or switched off by controlling the Chern numbers of the individual domains. Our results demonstrate MnBi 2 Te 4 as an emerging platform for topological circuits design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Mott insulators with boundary zeros

The topological classification of electronic band structures is based on symmetry properties of Bloch eigenstates of single-particle Hamiltonians. In parallel, topological field theory has opened the doors to the formulation and characterization of non-trivial phases of matter driven by strong electron-electron interaction. Even though important examples of topological Mott insulators have been constructed, the relevance of the underlying non-interacting band topology to the physics of the Mott phase has remained unexplored. Here, we show that the momentum structure of the Green’s function zeros defining the “Luttinger surface" provides a topological characterization of the Mott phase related, in the simplest description, to the one of the single-particle electronic dispersion. Considerations on the zeros lead to the prediction of new phenomena: a topological Mott insulator with an inverted gap for the bulk zeros must possess gapless zeros at the boundary, which behave as a form of “topological antimatter” annihilating conventional edge states. Placing band and Mott topological insulators in contact produces distinctive observable signatures at the interface, revealing the otherwise spectroscopically elusive Green’s function zeros.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator

Here we investigate antiferromagnetic Eu 5 In 2 Sb 6 , a nonsymmorphic Zintl phase. Our electrical transport data show that Eu 5 In 2 Sb 6 is remarkably insulating and exhibits an exceptionally large negative magnetoresistance, which is consistent with the presence of magnetic polarons. From ab initio calculations, the paramagnetic state of Eu 5 In 2 Sb 6 is a topologically nontrivial semimetal within the generalized gradient approximation (GGA), whereas an insulating state with trivial topological indices is obtained using a modified Becke–Johnson potential. Notably, GGA + U calculations suggest that the antiferromagnetic phase of Eu 5 In 2 Sb 6 may host an axion insulating state. Our results provide important feedback for theories of topological classification and highlight the potential of realizing clean magnetic narrow-gap semiconductors in Zintl materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Concurrence of quantum anomalous Hall and topological Hall effects in magnetic topological insulator sandwich heterostructures

The quantum anomalous Hall (QAH) effect is a consequence of non-zero Berry curvature in momentum space. The QAH insulator harbours dissipation-free chiral edge states in the absence of an external magnetic field. Yet, the topological Hall (TH) effect, a hallmark of chiral spin textures, is a consequence of real-space Berry curvature. Herein, by inserting a topological insulator (TI) layer between two magnetic TI layers, we realized the concurrence of the TH effect and the QAH effect through electric-field gating. The TH effect is probed by bulk carriers, whereas the QAH effect is characterized by chiral edge states. The appearance of the TH effect in the QAH insulating regime is a consequence of chiral magnetic domain walls that result from the gate-induced Dzyaloshinskii–Moriya interaction and occurs during the magnetization reversal process in the magnetic TI sandwich samples. The coexistence of chiral edge states and chiral spin textures provides a platform for proof-of-concept dis- sipationless spin-textured spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Strongly correlated Chern insulators in magic-angle twisted bilayer graphene

Interactions between electrons and the topology of their energy bands can create unusual quantum phases of matter. Most topological electronic phases appear in systems with weak electron–electron interactions. The instances in which topological phases emerge only as a result of strong interactions are rare and mostly limited to those realized in intense magnetic fields. The discovery of flat electronic bands with topological character in magic-angle twisted bilayer graphene (MATBG) has created a unique opportunity to search for strongly correlated topological phases. Here we introduce a local spectroscopic technique using a scanning tunnelling microscope to detect a sequence of topological insulators in MATBG with Chern numbers C = ±1, ±2 and ±3, which form near filling factors of ±3, ±2 and ±1 electrons per moiré unit cell, respectively, and are stabilized by modest magnetic fields. One of the phases detected here (C = +1) was previously observed when the sublattice symmetry of MATBG was intentionally broken by a hexagonal boron nitride substrate, with interactions having a secondary role. We also demonstrate that strong electron–electron interactions alone can produce not only the previously observed phase, but also other unexpected Chern insulating phases in MATBG. The full sequence of phases that we observe can be understood by postulating that strong correlations favour breaking time-reversal symmetry to form Chern insulators that are stabilized by weak magnetic fields. Our findings illustrate that many-body correlations can create topological phases in moiré systems beyond those anticipated from weakly interacting models.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Self-consistent simulation of the initiation of the flashover discharge on vacuum insulator surface

A 2D particle-in-cell code, including the space charge effects of insulator surface charge, is established to simulate the initiation of insulator surface flashover. The simulation is started with a field electron emission, which provides the seed electrons of the surface flashover discharge. Then the secondary electron emission is caused by the seed electrons on the insulator surface, gets into an avalanche, and saturates rapidly in a region between the cathode and anode. And the saturation region spreads to the anode at a speed of {approx}10{sup 7} m/s, which is coincident with the experiment measurement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Large Fermi energy modulation in graphene transistors with high-pressure O{sub 2}-annealed Y{sub 2}O{sub 3} topgate insulators

We demonstrate a considerable suppression of the low-field leakage through a Y{sub 2}O{sub 3} topgate insulator on graphene by applying high-pressure O{sub 2} at 100 atm during post-deposition annealing (HP-PDA). Consequently, the quantum capacitance measurement for the monolayer graphene reveals the largest Fermi energy modulation (E{sub F} = ∼0.52 eV, i.e., the carrier density of ∼2 × 10{sup 13} cm{sup −2}) in the solid-state topgate insulators reported so far. HP-PDA is the robust method to improve the electrical quality of high-k insulators on graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Initiation of vacuum insulator surface high-voltage flashover with electrons produced by laser illumination

In this paper, experiments are described in which cylindrical vacuum insulator samples and samples inclined at 45° relative to the cathode were stressed by microsecond timescale high-voltage pulses and illuminated by focused UV laser beam pulses. In these experiments, we were able to distinguish between flashover initiated by the laser producing only photo-electrons and when plasma is formed. It was shown that flashover is predominantly initiated near the cathode triple junction. Even dense plasma formed near the anode triple junction does not necessarily lead to vacuum surface flashover. The experimental results directly confirm our conjecture that insulator surface breakdown can be avoided by preventing its initiation [J. G. Leopold et al., Phys. Rev. ST Accel. Beams 10, 060401 (2007)] and complement our previous experimental results [J. Z. Gleizer et al., IEEE Trans. Dielectr. Electr. Insul. 21, 2394 (2014) and J. Z. Gleizer et al., J. Appl. Phys. 117, 073301 (2015)].

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Stability of low-carrier-density topological-insulator Bi{sub 2}Se{sub 3} thin films and effect of capping layers

Although over the past number of years there have been many advances in the materials aspects of topological insulators (TIs), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the recent development of low-carrier-density bulk-insulating Bi{sub 2}Se{sub 3} thin films and their sensitivity to air demands reliable capping layers to stabilize their electronic properties. Here, we study the stability of the low-carrier-density Bi{sub 2}Se{sub 3} thin films in air with and without various capping layers using DC and THz probes. Without any capping layers, the carrier density increases by ∼150% over a week and by ∼280% over 9 months. In situ-deposited Se and ex situ-deposited poly(methyl methacrylate) suppress the aging effect to ∼27% and ∼88%, respectively, over 9 months. The combination of effective capping layers and low-carrier-density TI films will open up new opportunities in topological insulators.

36 MATERIALS SCIENCE↗