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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Thermal Infrared Detector Sparse Array for NASA Planetary Applications

In this work, we present an uncooled infrared (IR) thermal imager featuring a sparse array of resonant pixels that can be monolithically integrated with the readout electronics for long-term operation in hightemperature environments. Each of the detector pixels is made of an IR-sensitive GaN microresonator developed to be operated at up to 500 0C. The pixels are employed in sparse array configuration to allow for routing the signal carrying traces and to ease the routing from pixel to circuit, as well as to reduce the power consumption. A 128´128 sparse resonator array with the array density of 37.5% is designed and used in conjunction with the Compressed Sensing method to reconstruct complex test images from highly incomplete data. Capabilities and performance metrics of the recovery technique are explored.

Rais-Zadeh, Mina↗
NASA NTRS2023

Forward for the new edition of: “What Every Engineer Should Know About Risk Engineering and Management"

In aerospace and engineering in general, the major metrics are capability, cost, and safety/risk. With the increasingly rapid emergence and utilization of new technologies and systems of increasing complexity, ensuring safety becomes more difficult. The technology and practice/applications of safety/risk technologies require updating in concert with capability and systems technology changes. Hence the new, updated edition of this risk engineering book. Major changes in technology and applications, now and going forward, increasingly involve artificial intelligence (AI)/autonomy and complex systems, which are rapidly developing and moving targets when it comes to risk/safety analysis. These introduce both new risks and safety issues, and they alter more usual ones. The current reality is that often the best AI is when it is “Black Boxed”, developed “independently”, without detailed human understanding of how and by what processes decisions and results are produced. There are ongoing efforts to make the AI processes more understandable by humans, with results to be determined. Also, trusted and true autonomy is free of human intervention, which would require machines to ideate to solve in real time issues that arise due to unknown unknowns and even known unknowns. Machines using generative adversarial network (GANs) and other approaches are beginning to ideate. Overall, the capabilities and practice of AI/autonomy utilization is a work in progress with the rate of progress substantial and the impacts upon system risk/safety major.

Dennis M. Bushnell↗
NASA NTRSDate not supplied

Super-Resolution from Space: Using MERRA-2 and MAIAC Satellite Imagery to Produce Daily Continuous 1 km PM2.5 Estimates

PM2.5 measurements from ground stations are the gold standard when available, but the expense and coverage of such stations limits widespread monitoring. Having accurate PM2.5 estimates outside the range of these stations is important for monitoring this crucial aspect of air quality. The goal of this project is to produce daily 1 km continuous PM2.5 estimates for the contiguous US relying primarily on satellite-derived data sources. This is important because models based on such data can be more easily expanded outside the study area and produce global estimates as well. The temporal availability of such data products is often weekly/daily, unlike land-use products with are often available at a yearly or worse temporal resolution. To achieve our goal, we use a couple of different deep neural network architectures to produce PM2.5 measurements at 10 km and 1 km resolution. We use two model architectures, a UNET-like model and a GAN-based model. We train both models using MERRA-2 data and MAIAC AOD data scaled to 10 km and 1 km for the two different prediction resolutions. MERRA-2 imagery is data rich with a wide range of geospatial variables at 50 km and has long historical availability (beginning in 1980). We’re also using higher spatial resolution MAIAC data at 1 km to provide finer resolution spatial context. This essentially leverages the spatial resolution of MAIAC data and the “wider” information of MERRA-2 data to predict PM2.5. For the target data we’re using a modeled 1 km PM2.5 dataset produced by Harvard to pre-train our models and then fine-tune our models using ground station measurements. Not only are our results comparable with the performance of the Harvard dataset, but can be generalized to any area or time where MERRA-2 and MAIAC data is available.

satellite imagery↗
NASA NTRSDate not supplied

The Doppler Wind Temperature Sensor (DWTS) Flight Evaluation and Experiments (TES-16,17)

The Doppler Wind Temperature Sensor instrument (DWTS), developed by Global Atmospheric Technologies and Sciences (GATS), is a powerful yet simple tool with the potential of becoming a new window to upper atmosphere dynamics. Based around a defense-grade infrared camera peering through a static gas cell used as a scanning spectral filter, the DWTS is designed to measure the fingerprints of wind and thermal waves as they propagate to the mesosphere and lower thermosphere. DWTS achieves this scanning by measuring the induced change in the doppler shift of the emission as it passes through the DWTS field of view. DWTS holds promise to aid in more accurate weather determination (Gordley, et al), and the core technology can be easily adapted to study other atmospheres of interest. In partnership with GATS, NOAA, and other collaborators, NASA Ames and the Nano Orbital Workshop group have been working to evaluate the DWTS instrument on orbit and optimize it as a flexible cube satellite payload. The first mission selected for DWTS evaluation is preparing for flight in early 2024, followed by a more capable science mission in 2025, with both missions part of the TES-n/NOW flight series. The first flight, TES-16/DWTS-A, will incorporate a single DWTS instrument in an approximately 2U payload volume with the imaging aperture perpendicular to the flight velocity vector. With an estimated power consumption of 20 watts, supplied via a custom NOW-designed GaN converter, the instrument will maintain the imaging sensor plane at 80K using an integrated pulse-tube cryocooler during instrument evaluation periods. Data from DWTS will be captured via a NOW-designed custom data processor before being transmitted via S-band radio back to select ground stations, with instrument command and control operated via L-band global-coverage radio. After the TES-16/DWTS-A initial demonstration mission, the subsequent TES-17/DWTS-B mission will be a dedicated science mission equipped with three DWTS instruments, each hosting a different gas cell to obtain full altitude coverage from 20 to 200 km both day and night from a single cube satellite. The intention of the flight series, and one of NASA’s interests in the instrument, is to advance a Martian atmospheric instrument (Colaprete, Gordley, et al) which, if successful, would greatly further understanding of Martian atmospheric behavior. The proposed paper will review the flight series in detail, including challenges from the TES-16 flight tests and the projected challenges and application to Mars study. Additional detail regarding the possible applications of a Cognitive Communication technique in current flight development by NOW collaborators at the NASA Glenn Research Center will also be discussed, including the implications of using an automated User Initiated Service (UIS) protocol to maximize the data collected per orbit.

Doppler Wind Temperature Sensor↗
NASA NTRS2023

Extended Temperature Operation of Isolated, Precision Gate Driver, ADuM4120

Electronics used in space missions encounter exposure to extreme temperatures and operation under wide thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. Extending the temperature range at which electronic parts can operate reliably leads to potential benefits resulting in improving reliability, reducing mass/weight, and simplifying thermal design due to elimination of thermal control elements and fewer parts count. In this work, the performance of an isolated, precision gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Power Electronics↗
NASA NTRS2022

A High Voltage Tethered Power System for Planetary Surface Applications

In the pursuit of human and robotic expansion of theLunar surface and other planetary bodies, power conversionand transmission over long distances has emerged as a distinctneed. The ability to transmit power over kilometers at highefficiency enables human settlement, in-situ resource utilization,and extreme terrain robotic exploration, through the ability toreach previously unreachable places. The critical buildingblocks of such a system are being developed by the TetheredPower System for Lunar Mobility and Power Transmission(TYMPO) project, a NASA project aimed at reaching flightreadiness by 2024. This paper presents an architectural andrequirements overview of the TYMPO project, along withtechnology discussions on the GaN-based multilevel DCXconverters, dual fiber optics and power-line communicationssystem, and high-voltage tether. Finally, a set of proposed futuremissions will be presented, mapping the capabilities of theTYMPO system to missions that may soon explore planetarysurfaces throughout the solar system.

Yang, Summer↗
DOE OSTI2020

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Thermal and Mechanical Design of a High-Voltage Power Electronics Package: Preprint

Thermal and mechanical design aspects of a power electronic package with 5-kV GaN devices are presented. Through finite element analyses, the impact of different cooling configurations and device location on the thermal performance and reliability of the package was investigated. It was found that placing the devices closer to the direct-bond-copper substrate as opposed to a centered approach in the proposed double-sided-cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

27 ARPA - Advanced Research Projects Agency-Energy↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
DOE OSTI2021

Comprehension of Spatial Constraints by Neural Logic Learning from a Single RGB-D Scan

Autonomous industrial assembly relies on the precise measurement of spatial constraints as designed by computer-aided design (CAD) software such as SolidWorks. This paper proposes a framework for an intelligent industrial robot to understand the spatial constraints for model assembly. An extended generative adversary network (GAN) with a 3D long short-term memory (LSTM) network was designed to composite 3D point clouds from a single RGB-D scan. The spatial constraints of the segmented point clouds are identified by a neural-logic network that incorporates general knowledge of spatial constraints in terms of first-order logic. The model was designed to comprehend a complete set of spatial constraints that are consistent with industrial CAD software, including left, right, above, below, front, behind, parallel, perpendicular, concentric, and coincident relations. The accuracy of 3D model composition and spatial constraint identification was evaluated by the RGB-D scans and 3D models in the ABC dataset. The proposed model achieved 57.23% intersection over union (IoU) in 3D model composition, and over 99% in comprehending all spatial constraints.

Wang, Dali↗
DOE OSTI2021

Multiplexing-Based Flyback Converter for Multi-Port USB Power Delivery with True Power-Sharing

Universal serial bus power delivery (USB-PD) chargers are more attractive to consumers with multiple output ports. Existing multiple port charger designs take multi-stage approach thus increase power loss and charger size. Also, ports are normally designed with different power capability thus the high-power port becomes under-used if the connected device is fully charged while the other lower power ports cannot take over the unused power. This is mainly limited by the power architecture design. This paper addresses this issue by presenting a multiplexing based multi-port quasi-resonant flyback converter. The design achieves true power-sharing with high efficiency, small size, and simple analog implementation. This paper discusses the operating principle and design considerations. A GaN-based 60 W dual port charger verifies the proposed scheme while achieving 76% size reduction and 1% efficiency improvement than state-of-the-art.

Xue, Lincoln↗
DOE OSTI2022

Gallium nitride electromagnetic pulse arrestor

A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cm 2 in a 1 mm 2 device (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 mΩ cm 2 .

Kaplar, Robert↗
DOE OSTI2022

Simurgh: A Framework for Cad-Driven Deep Learning Based X-Ray CT Reconstruction

High-resolution X-ray computed tomography (XCT) is an important technique for the inspection of additively manufactured (AM) parts. While XCT is typically used off-line to inspect a subset of manufactured parts, significantly accelerating measurement speed while retaining accuracy would enable use of XCT for in-line inspection to rapidly identify defects in each part as it is manufactured. Here, we propose a deep learning (DL) based approach that uses computer aided design (CAD) models of the AM parts and physics-based information to rapidly produce high-quality reconstructions from sparse XCT measurements without high quality ground truth data. Our approach uses a generative adversarial neural network (GAN) to produced realistic training data from the CAD-based simulations and a deep neural network that is trained using data from the first stage to produce accurate 3D reconstructions. Using experimental XCT data of metal parts, we demonstrate enhanced defect detection capabilities while dramatically reducing the scan time.

Ziabari, Amir↗
DOE OSTI2023

Simulation of gallium nitride vertical fin-shaped field effect transistor for use as thermal neutron detector

Through the use of a radiation detection system simulation framework, a gallium nitride vertical fin-shaped field effect transistor (FinFET) was studied for output response when utilized as a thermal neutron detector. The FinFET was assumed to had been backfilled with boron carbide, reactive to thermal neutrons. The GaN FinFET was modeled with radiation transport from MCNP, and the electronic transport from COMSOL Multiphysics. Fabricated FinFET devices (not neutron reactive) were tested to aid in the tuning of the COMSOL FinFET model. Through time-depenent studies, the drain current response pulse to simulated ionization due to single events lead to building of a database of device responses to radiation. By integrating the current pulses over time, the induced charge was calculated. Using the results of the radiation transport PTRAC file in combination with the induced charge database, an integrated charge spectrum was calculated.

Davidson, Bryce L.↗
DOE OSTI2023

High voltage switch with cascaded transistor topology

A switching apparatus includes three or more series-connected transistors, and it further includes a balancing network. The balancing network includes a resistor network configured to divide a voltage from a voltage source across the series-connected transistors. The resistor network includes at least two resistive legs connected in parallel. In each resistive leg, two or more resistors are connected in series. The balancing network may further comprise at least one capacitive leg of series-connected capacitors connected across the series-connected transistors, and it may further comprise at least one leg of series-connected avalanche diodes connected across the series-connected transistors for overvoltage protection. In example embodiments, the series-connected transistors are JFETs. In other example embodiments, the series-connected transistors may be HEMTs or GaN transistors.

Gill, Lee↗
DOE OSTI2023

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point.[1] Among a number of candidate materials, AlxGa1-xN is the strongest, having bipolar dopability, thermal and chemical stability, an ultra-wide bandgap, and demonstrated experimental feasibility. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. [1] Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. [2,3,4] In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees Celsius. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2021

Self-Supervised Anomaly Detection via Neural Autoregressive Flows with Active Learning

Many self-supervised methods have been proposed with the target of image anomaly detection. These methods often rely on the paradigm of data augmentation with predefined transformations such as flipping, cropping, and rotations. However, it is not straightforward to apply these techniques for non-image data, such as time series or tabular data, while the performance of the existing deep approaches has been under our expectation on tasks beyond images. In this work, we propose a novel active learning (AL) scheme that relied on neural autoregressive flows (NAF) for self-supervised anomaly detection, specifically on small-scale data. Unlike other generative models such as GANs or VAEs, flow-based models allow to explicitly learn the probability density and thus can assign accurate likelihoods to normal data which makes it usable to detect anomalies. The proposed NAF-AL method is achieved by efficiently generating random samples from latent space and transforming them into feature space along with likelihoods via invertible mapping. The samples with lower likelihoods are selected and further checked by outlier detection using Mahalanobis distance. The augmented samples incorporating with normal samples are used for training a better detector so as to approach decision boundaries. Compared with random transformations, NAF-AL can be interpreted as a likelihood-oriented data augmentation that is more efficient and robust. Extensive experiments show that our approach outperforms existing baselines on multiple time series and tabular datasets, and a real-world application in advanced manufacturing, with significant improvement on anomaly detection accuracy and robustness over the state-of-the-art.

Zhang, Jiaxin↗
DOE OSTI2024

Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.

alloy↗