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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Electron tomography of dislocation structures

Recent developments in the application of electron tomography for characterizing microstructures in crystalline solids are described. The underlying principles for electron tomography are presented in the context of typical challenges in adapting the technique to crystalline systems and in using diffraction contrast imaging conditions. Methods for overcoming the limitations associated with the angular range, the number of acquired images, and uniformity of image contrast are introduced. In addition, a method for incorporating the real space coordinate system into the tomogram is presented. As the approach emphasizes development of experimental solutions to the challenges, the solutions developed and implemented are presented in the form of examples.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires

Amplified spontaneous emission (ASE) at 456 nm from In{sub 0.2}Ga{sub 0.8}N nanowires grown on (001) silicon by catalyst-free molecular beam epitaxy was observed at room temperature under femtosecond excitation. The photoluminescence spectra below ASE threshold consist of two spontaneous emission bands centered at {approx}555 nm and {approx}480 nm, respectively, revealing the co-existence of deeply and shallowly localized exciton states in the nanowires. The ASE peak emerges from the 480 nm spontaneous emission band when the excitation density exceeds {approx}120 {mu}J/cm{sup 2}, indicating that optical gain arises from the radiative recombination of shallowly localized excitons in the nanowires. Time-resolved photoluminescence measurements revealed that the ASE process completes within 1.5 ps, suggesting a remarkably high stimulated emission recombination rate in one-dimensional InGaN nanowires.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.

36 MATERIALS SCIENCE↗