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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Thermoelectric Figure of Merit of a Superatomic Crystal Re 6 Se 8 I 2 Monolayer

Superatomic materials are newly emerging candidates for high-performance thermoelectric (TE) devices due to their intrinsic ultralow thermal conductivities. However, the low TE power factor becomes a huge obstacle to reaching the required the dimensionless figure of merit (ZT) values for practical applications. Here, motivated by the recently synthesized superatomic Re 6 Se 8 I 2 monolayer [J. Am. Chem. Soc. 144, 74 (2022)], we study its superior thermoelectric properties by using density functional theory combined with phonon Boltzmann transport theory and deep potential molecular dynamics. We show that the large mass and anharmonic Re-I bonds introduce strong phonon scattering and result in low lattice thermal conductivity of 1.20 W m -1 K -1 at 300 K, while the strong and harmonic Re-Se network ensures the high TE power factor of 4344 μW m -1 K -2 in b direction for n-type doping. This is an order of magnitude higher than that of other cluster-based materials. Due to the low thermal conductivity and high TE power factor, Re 6 Se 8 I 2 exhibits high ZT values of 1.20 (500 K) and 1.43 (900 K) with n-type doping along the b direction among all the cluster-based thermoelectric materials reported so far.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magnetic excitations in strained infinite-layer nickelate PrNiO 2 films

Strongly correlated materials respond sensitively to external perturbations such as strain, pressure, and doping. In the recently discovered superconducting infinite-layer nickelates, the superconducting transition temperature can be enhanced via only ~ 1% compressive strain-tuning with the root of such enhancement still being elusive. Using resonant inelastic x-ray scattering (RIXS), we investigate the magnetic excitations in infinite-layer PrNiO 2 thin films grown on two different substrates, namely SrTiO 3 (STO) and (LaAlO 3 ) 0.3 (Sr 2 TaAlO 6 ) 0.7 (LSAT) enforcing different strain on the nickelates films. The magnon bandwidth of PrNiO 2 shows only marginal response to strain-tuning, in sharp contrast to the enhancement of the superconducting transition temperature T c in the doped superconducting samples. These results suggest the bandwidth of spin excitations of the parent compounds is similar under strain while T c in the doped ones is not, and thus provide important empirics for the understanding of superconductivity in infinite-layer nickelates.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Synergy of Ion Doping and Spiral Array Architecture on Ti 2 Nb 10 O 29 : A New Way to Achieve High-Power Electrodes

Ameliorating electronic/ionic transport and structural stability of electrode materials is important to the development of power-intensive lithium ion batteries. Despite its great potential as a high-power anode, titanium niobium oxide (Ti 2 Nb 10 O 29 , TNO) still underperforms due to its unsatisfactory electronic/ionic conductivity. In this work, a powerful synergistic strategy by combining ion doping and spiral array architecture to boost high-rate performance of TNO is reported. Cr 3+ doped TNO nanoparticles (Cr-TNO) of 5-10 nm intimately grow on a conductive vertical graphene@TiC-C (VGTC) skeleton, forming novel Cr-TNO@VGTC spiral arrays. The unique spiral growth of TNO is achieved due to the confinement effect of VGTC skeleton. Meanwhile, a more open TNO crystal structure with faster ion transfer paths and enhanced structural stability is realized by Cr 3+ doping, demonstrated via density functional theory calculation and in situ synchrotron X-ray diffraction technique. Benefiting from the superior conductive network, enhanced intrinsic electronic/ionic conductivity of Cr-TNO and reinforced structural stability, the Cr-TNO@VTC arrays show prominent high-power performance with a large capacity of 220 mAh g -1 at 40 C (power density of ≈11 kW kg -1 ) and superior durability (91% retention after 500 cycles). This work provides a new path for the construction of widespread high-power electrodes for fast energy storage.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Size- and Temperature-Dependent Suppression of Phonon Thermal Conductivity in Carbon Nanotube Thermoelectric Films

Heat transport in nanoscale carbon materials such as carbon nanotubes and graphene is normally dominated by phonons. Here, measurements of in-plane thermal conductivity, electrical conductivity, and thermopower are presented from 77–350 K on two films with thickness <100 nm formed from semiconducting single-walled carbon nanotubes. These measurements are made with silicon–nitride membrane thermal isolation platforms. The two films, formed from disordered networks of tubes with differing tube and bundle size, have very different thermal conductivity. One film matches a simple model of heat conduction assuming constant phonon velocity and mean free path, and 3D Debye heat capacity with a Debye temperature of 770 K. The second film shows a more complicated temperature dependence, with a dramatic drop in a relatively narrow window near 200 K where phonon contributions to thermal conductivity essentially vanish. This causes a corresponding large increase in thermoelectric figure-of-merit at the same temperature. A better understanding of this behavior can allow significant improvement in thermoelectric efficiency of these low-cost earth-abundant, organic electronic materials. Finally, heat and charge conductivity near room temperature is also presented as a function of doping, which provides further information on the interaction of dopant molecules and phonon transport in disordered nanotube films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Octahedral to tetrahedral bonding transitions in the local structure of phase change optical media Ge 2 Sb 2 Se 5 x Te 5-5 x with Se doping

Random access memories utilize fast, reversible switching between ordered and disordered states of matter in phase change materials (PCMs) such as Ge2Sb2Te5-5x. The short-range structure in the disordered phase has been described either as (i) a network of Ge tetrahedra or (ii) Peierls distorted Ge/Sb octahedra. The PCM transition was investigated in bulk Ge2Sb2Se5xTe5-5x (GSST), in which amorphization sets in with Se doping (x ≈ 0.85) upon quenching. GSST has a hexagonal crystalline ground state with Ge/Sb octahedral coordination, but the phase change transition to the amorphous state that is only observed when the system is quenched brings a short-range structure with sharp, tetrahedrally coordinated Ge/Sb correlations and shortened bonds that are distinctly different from the expected octahedral pairing.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
NASA NTRS1998

Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

Sarkisov, S.↗
DOE OSTI2022

n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication

The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. Here, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi 2 Te 3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.

42 ENGINEERING↗
NASA NTRS2003

High Temperature Thermographic Phosphor Coatings Development

For many years, phosphor thermometry has been used for non-contact temperature measurements. A large number of applications have been associated with high temperatures, especially for aerospace systems where blackbody radiation backgrounds are large and in challenging environments, such as vibration, rotation, flame, or noise. These environments restrict the use of more common thermocouples or infrared thermometric techniques. In particular, temperature measurements inside jet turbines, rocket engines, or similar devices are especially amenable to phosphor techniques. Often the fluorescent materials are used as powders, either suspended in binders and applied like paint or applied as high-temperature sprays. Thin coatings that are less than 50 m thick are used on the surfaces of interest. These coatings will quickly assume the same temperature as the surface to which they are applied. The temperature dependence of fluorescent materials is a function of the base matrix atoms and a small quantity of added activator or dopant ions. Often for high temperature applications, the selected materials are refractory and include rare earth ions. Phosphors like Y3Al5O12 (YAG) doped with Eu, Dy, or Tm, Y2O3 doped with Eu, or similar rare earth compounds, will survive high temperatures and can be configured to emit light that changes rapidly in lifetime and intensity. For example, researchers at Oak Ridge National Laboratory recently observed fluorescence from YAG:Dy and YAG:Tm at temperatures above 1400 C. One of the biggest challenges is to locate a binder material that can withstand tremendous variations in temperature in an adverse aerospace environment. This poster will provide an overview into our attempt to utilize phosphors for thermometry purposes. Emphasis will be placed on the use of selected binder materials that can withstand high temperatures. This research was completed for the National Aeronautics and Space Administration's Glenn Research Center in Cleveland, Ohio.

Goedeke, Shawn↗
DOE OSTI2024

Nano-infrared imaging of epitaxial graphene on SiC revealing doping and thickness inhomogeneities

Here, we report on a nano-infrared (IR) imaging and spectroscopy study of epitaxial graphene on silicon carbide (SiC) by using scattering-type scanning near-field optical microscopy (s-SNOM). With nano-IR imaging, we reveal in real space microscopic domains with distinct IR contrasts. By analyzing the nano-IR, atomic force microscopy, and scanning tunneling microscopy imaging data, we conclude that the imaged domains correspond to single-layer graphene, bilayer graphene (BLG), and higher-doped BLG. With nano-IR spectroscopy, we find that graphene can screen the SiC phonon resonance, and the screening is stronger at more conductive sample regions. Our work offers insights into the rich surface properties of epitaxial graphene and demonstrates s-SNOM as an efficient and effective tool in characterizing graphene and possibly other two-dimensional materials.

2D materials↗
DOE OSTI2022

Ferromagnetic Double Perovskite Semiconductors with Tunable Properties

Abstract The authors successfully dope the magnetically silent double perovskite semiconductor Sr 2 GaSbO 6 to induce ferromagnetism and tune its bandgap, with Ga 3+ partially substituted by the magnetic trivalent cation Mn 3+ , in a rigid cation ordering with Sb 5+ . The new ferromagnetic semiconducting Sr 2 Ga 1− x Mn x SbO 6 double perovskite, which crystallizes in tetragonal symmetry (space group I 4/ m ) and has tunable ferromagnetic ordering temperature and bandgap, suggests that magnetic ion doping of double perovskites is a productive avenue toward obtaining materials for application in next‐generation oxide‐based spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Revealing Robust Room Temperature Ferromagnetism in Gd‐Doped Few‐Layered MoS 2 Thin Films

2D MoS 2 holds great promise for spintronics, yet is limited by intrinsic diamagnetism. This study demonstrates inducing ferromagnetic behavior in MoS 2 films doped with 0.47% Gd, achieving an ultrahigh saturation magnetization of 454 emu/cm 3 in a few‐layered film over 11‐times higher than bulk films (40 nm). Raman spectroscopy, X‐ray photoelectron spectroscopy, X‐ray magnetic circular dichroism, and density functional theory (DFT) calculations reveal an interplay between Gd dopants and Mo, S vacancies (V 1Mo+2S ), leading to the formation of bound magnetic polarons (BMPs) that drive ferromagnetic ordering. H 2 S annealing and DFT calculations reveal that defect healing reduces the saturation magnetization by 83%. High sulfur migration barrier in few‐layered films helps preserve BMPs, thereby sustaining ferromagnetism, whereas lower migration barriers in bulk films lead to suppression. These findings highlight the synergy between Gd doping and defect engineering in achieving ultrahigh room‐temperature ferromagnetism, offering a scalable strategy for developing high‐performance 2D magnetic materials for spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effect of Carbon Doping on CO 2 –Reduction Activity of Single Cobalt Sites in Graphitic Carbon Nitride

Single atom catalysts have demonstrated interesting activity in a variety of applications. In this study, we prepared single C o2+ sites on graphitic carbon nitride (C 3 N 4 ), which was doped with carbon for enhanced activity in visible-light CO 2 reduction. The synthesized materials were characterized with a variety of techniques, including microscopy, X-ray powder diffraction, UV-vis spectroscopy, infrared spectroscopy, photoluminescence spectroscopy, and X-ray absorption spectroscopy. Here, doping C 3 N 4 with carbon was found to have profound effect on the photocatalytic activity of the single Co 2+ sites. At relatively low levels, carbon doping enhanced the photoresponse of C 3 N 4 in the visible region and improved charge separation upon photoactivation, thereby enhancing the photocatalytic activity. Furthermore, high levels of carbon doping were found to be detrimental to the photocatalytic activity of the single Co 2+ sites by altering the structure of C 3 N 4 and generating defect sites responsible for charge recombination.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Enhanced visible-light-assisted peroxymonosulfate activation on cobalt-doped mesoporous iron oxide for orange II degradation

Sulfate radical-based advanced oxidation processes (SR-AOP) attracted a lot of attention due to their capability and adaptability in wastewater treatment. Although heterogeneous cobalt-based catalysts have been extensively studied and have emerged superior for peroxymonosulfate (PMS) activation, leaching of cobalt is still a major concern. Herein, we report a photo-assisted PMS activation approach using cobalt doped mesoporous iron oxide with exceptional activity and stability up to 7 cycles with very low cobalt leaching (0.5 ppm). The highest activity was obtained by 1 mol % cobalt doped mesoporous iron oxide. Orange II dye was completely degraded by the reactive oxygen species (ROS) generated under visible light irradiation within 1 min. ROS were evaluated using two distinct techniques (Fluorescence probes and Electron Paramagnetic Resonance (EPR). ROS quenching experiments were also used to highlight the dominant pathway. This study correlates the structural and electronic changes induced with cobalt doping to the exceptional activity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Local structural mechanism for enhanced energy storage properties in heterovalent doped NaNbO 3 ceramics

In recent years, there is a growing interest for new lead-free oxides with reversible antiferroelectric (AFE)-ferroelectric (FE) phase transition for high-power energy-storage applications. NaNbO 3 -based ceramics are particularly attractive due to their easy synthesis and cost-effectiveness. In order to stabilize reversible AFE-FE phase transition, NaNbO 3 is doped with a combination of heterovalent substitutions, although the underlying structural mechanism for the same is poorly understood. Here, we investigated local and average structures of Ca/Zr doped NaNbO 3 using neutron total scattering. Here, we show that Ca/Zr doping increases the average AFE phase (Pbma) fraction, however, the material remains as a composite of both FE (P2 1 ma) and AFE regions. Analysis of local structure suggests that increase in the long-range AFE phase results from more extensive twinning of local FE regions, due to introduced charge disorder. We propose that enhanced energy-storage properties of Ca/Zr-doped NaNbO 3 arises from localized twin boundary motion between the defect-induced pinning centers.

25 ENERGY STORAGE↗
DOE OSTI2021

Unusual Role of Point Defects in Perovskite Nickelate Electrocatalysts

Low-cost transition-metal oxide is regarded as a promising electrocatalyst family for an oxygen evolution reaction (OER). The classic design principle for an oxide electrocatalyst believes that point defect engineering, such as oxygen vacancies (VO .. ) or heteroatom doping, offers the opportunities to manipulate the electronic structure of material toward optimal OER activity. Oppositely, in this work, we discover a counterintuitive phenomenon that both VO .. and an aliovalent dopant (i.e., proton (H + )) in perovskite nickelate (i.e., NdNiO 3 (NNO)) have a considerably detrimental effect on intrinsic OER performance. Detailed characterizations unveil that the introduction of these point defects leads to a decrease in the oxidative state of Ni and weakens Ni-O orbital hybridization, which triggers the local electron-electron correlation and a more insulating state. Evidenced by first-principles calculation using the density functional theory (DFT) method, the OER on nickelate electrocatalysts follows the lattice oxygen mechanism (LOM). The incorporation of point defect increases the energy barrier of transformation from OO*(V O ) to OH*(V O ) intermediates, which is regarded as the rate-determining step (RDS). Furthermore, this work offers a new and significant perspective of the role that lattice defects play in the OER process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Aliovalent Doping of CeO 2 Improves the Stability of Atomically Dispersed Pt

Atomically dispersed supported catalysts hold considerable promise as catalytic materials. The ability to employ and stabilize them against aggregation in complex process environments remains a key challenge to the elusive goal of 100% atom utilization in catalysis. In this work, using a Gd-doped ceria support for atomically dispersed surface Pt atoms, we establish how the combined effects of aliovalent doping and oxygen vacancy generation provide dynamic mechanisms that serve to enhance the stability of supported single atom configurations. Using correlated, in situ X-ray absorption, photoelectron and vibrational spectroscopies for analysis of the samples on the two types of support (with and without Gd doping), we establish that the Pt atoms locate proximal to Gd dopants, forming a speciation that serves to enhance the thermal stability of Pt atoms against aggregation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Database of Nonaqueous Proton-Conducting Materials

This work presents the assembly of 48 papers, representing 74 different compounds and blends, into a machine-readable database of nonaqueous proton-conducting materials. SMILES was used to encode the chemical structures of the molecules, and we tabulated the reported proton conductivity, proton diffusion coefficient, and material composition for a total of 3152 data points. The data spans a broad range of temperatures ranging from -70 to 260 °C. To explore this landscape of nonaqueous proton conductors, DFT was used to calculate the proton affinity of 18 unique proton carriers. The results were then compared to the activation energy derived from fitting experimental data to the Arrhenius equation. It was found that while the widely recognized positive correlation between the activation energy and proton affinity may hold among closely related molecules, this correlation does not necessarily apply across a broader range of molecules. This work serves as an example of the potential analyses that can be conducted using literature data combined with emerging research tools in computation and data science to address specific materials design problems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗