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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Nonlinear convergence in contact mechanics: Immersed boundary finite volume

In this report we present an immersed boundary finite volume (IBM) method for simulating quasistatic contact mechanics of linearly elastic domains at small strains. In IBM, all external boundaries and internal contacts of an object are represented by embedded surfaces inside a Cartesian mesh, which need not conform to the grid lines. The contact constraints consist of the non-penetrability condition and Coulomb’s friction law, which are discretized using special interpolation stencils and enforced via penalty parameters. The resulting nonlinear system depends on displacement unknowns only. To solve it, we use the Newton method but find that it diverges frequently. To understand the divergence pattern, we analyze a simplified 2-cell problem and show that the global convergence of Newton cannot be ensured for any choice of penalty parameters. We thus propose a modified Newton solver, which guarantees convergence for the 2-cell problem and is numerically verified to converge for all the challenging simulations considered herein. While both 1 st - and 2 nd -order variants of IBM, in displacement unknowns, are proposed, the modified Newton solver applies only to the 1 st -order variant.

42 ENGINEERING↗
DOE OSTI2025

Damage progression and failure of SiC/SiC composite tubes under hard-contact radial expansion

The response of silicon carbide (SiC) fiber-reinforced SiC matrix (SiC/SiC) composite cladding to mechanical interaction with fissile fuel is a knowledge gap that must be overcome to design and assess SiC-based cladding systems for advanced nuclear applications. This study developed the relevant mechanical testing capability and identified the failure behavior and the critical microstructural features and processing defects. Sections of SiC composite tube were subjected to a modified expansion-due-to-compression (EDC) test in an X-ray computed tomography microscope: a polyurethane plug pressed surrogate Al 2 O 3 into the inner walls of the SiC/SiC composite tubes to achieve hard contact. A pure EDC test with just a polyurethane plug was also performed as a reference. Through the use of displacement fields, digital volume correlation revealed inhomogeneous deformation fields in the tubes, even for pure EDC, which was related to the inherent defects in the structure. Deep learning–aided segmentation and systematic data analysis revealed that the presence of inhomogeneous deformation applied by the hard contact was exaggerated by the presence of inner surface imperfections left behind from the matrix densification process. In conclusion, the findings provide insights into the applications, highlighting the necessity for improvements in inner surface roughness and the incorporation of localized contacts in pellet–cladding mechanical interaction computational models.

Composites↗
DOE OSTI2022

Modeling and experimental validation of direct contact crossflow packed beds condenser used in HDH desalination systems

Humidification and dehumidification (HDH) desalination systems are alternatives to reverse osmosis desalination systems, especially for high salinity waters. A HDH system is essentially equipped with a humidifier (also called as evaporator) for air to pick up vapor from saline water, a dehumidifier (also called as condenser) to produce freshwater, and a heating source. HDH systems based on direct contact packed beds heat exchangers have remarkably lower costs than traditional HDH systems due to their inexpensive materials and simple configurations. This paper specifically focuses on direct contact crossflow packed beds condensers, in which cooling water vertically drips through the packed beds, directly contacting the horizontal air-vapor flow. A two-dimensional mathematical model that solves for the enthalpy values of the working fluids is proposed in this paper, and the PDEs are solved using finite differences. To validate the model, an experimental condenser was built and tested. Water temperatures inside the test section at twenty-nine locations were measured, as well as the air vapor temperatures of five locations at the outlet. The measured water and air-vapor temperatures agree with the simulation results with less than 10 % error in most of the compared domain.

42 ENGINEERING↗
DOE OSTI2024

Improving 2D Schottky contacts using an intralayer strategy

An additional insulating layer between the electrode and semiconductor is beneficial to reduce the interfacial coupling and build two-dimensional (2D) Schottky contacts. Here, an intralayer strategy was proposed by using metallic 2D Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) as contacts on 2D semiconductors. Inside a BSCCO monolayer, a conductive layer is sandwiched between insulating layers. Thus, the BSCCO contact has its own insulating layer, which is ultra-thin, single crystalline, and of high quality. This native layer could reduce the metal-induced gap state and thus weaken the interfacial Fermi level pinning effect. Such 2D Schottky diodes thus have barrier heights of 300 mV and a rectification ratio of 104. Furthermore, 2D metal-semiconductor field-effect transistors with BSCCO Schottky gate have a high on-off ratio, low leakage current, and low subthreshold swing value near the theoretical limit. The intralayer structure offers a new approach to improve the 2D Schottky junctions and has prospects in 2D electronics and optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Water contact angles on quartz surfaces under supercritical CO 2 sequestration conditions: Experimental and molecular dynamics simulation studies

The ambiguity of contact angle experimental measurements due to surface chemistry changes resulted from sample contamination and/or the degrees of reaction with supercritical CO 2 has resulted in great difficulties to precisely understand the wetting behavior of CO 2 under the geological carbon sequestration (GCS) conditions. Water contact angles on quartz surface under GCS conditions were investigated through the combined experimental and molecular dynamics simulation (MDS) methods. The experimental results show that water contact angles increases as ionic strength increases. The effects of pressure and temperature are very weak. The dependence of ionic strength, pressure and temperature is same for monovalent and divalent ions solutions. In the MDS, a hydroxylated quartz surface was used as the base point. A good agreement between the MDS and experimental results were obtained. Using the MDS method, a clean mineral surface with a desired surface chemistry can be constructed, which is difficult in experiments. So by comparing MDS and experimental results, the mechanisms of the reservoir wettability can be better understood. Further investigation can be made on quartz surface with different functional groups to better understand wettability alteration caused by contamination and/or CO 2 reaction.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2013

Effects of contact resistance on electrical conductivity measurements of SiC-based materials

A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (R c ) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ~973 K. The R c -values behaved similarly for each type of metallic electrode: R c > ~1000 Ω cm 2 at RT, decreasing continuously to ~1–10 Ω cm 2 at 973 K. The temperature dependence of the inverse R c indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ~0.3 eV. Finally, for the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

contact resistance↗
DOE OSTI2021

Nonlinear Interface Reduction for Time-Domain Analysis of Hurty/Craig-Bampton Superelements with Frictional Contact

Virtual prototyping in engineering design relies today on modern numerical models of contacting structures with accurate resolution of interface mechanics, which strongly affect the system-level stiffness and energy dissipation due to frictional losses. High-fidelity modeling within the localized interfaces is required to resolve local quantities of interest that may drive design decisions. The high-resolution finite element meshes necessary to resolve inter-component stresses tend to be computationally expensive, particularly when the analyst is interested in response time histories. The Hurty/Craig-Bampton (HCB) transformation is a widely used method in structural dynamics for reducing the interior portion of a finite element model while having the ability to retain all nonlinear contact degrees of freedom (DOF) in physical coordinates. These models may still require many DOF to adequately resolve the kinematics of the interface, leading to inadequate reduction and computational savings. This study proposes a novel interface reduction method to overcome these challenges by means of system-level characteristic constraint (SCC) modes and properly orthogonal interface modal derivatives (POIMDs) for transient dynamic analyses. Both SCC modes and POIMDs are computed using the reduced HCB mass and stiffness matrices, which can be directly computed from many commercial finite element analysis software. Comparison of time history responses to an impulse-type load in a mechanical beam assembly indicate that the interface-reduced model correlates well with the HCB truth model. Localized features like slip and contact area are well-represented in the time domain when the beam assembly is loaded with a broadband excitation. The proposed method also yields reduced-order models with greater critical timestep lengths for explicit integration schemes.

42 ENGINEERING↗
DOE OSTI2021

Emerging contact force heterogeneity in ordered soft granular media

Under external perturbations, inter-particle forces in disordered granular media are well known to form a heterogeneous distribution with filamentary patterns. Better understanding these forces and the distribution is important for predicting the collective behavior of granular media, the media second only to water as the most manipulated material in global industry. However, studies in this regard so far have been largely confined to granular media exhibiting only geometric heterogeneity, leaving the dimension of mechanical heterogeneity a rather uncharted area. In this work, through a FEM contact mechanics model, we show that a heterogeneous inter-particle force distribution can also emerge from the dimension of mechanical heterogeneity alone. Specifically, we numerically study inter-particle forces in packing of mechanically heterogeneous disks arranged over either a square or a hexagonal lattice and under quasi-static isotropic compression. Our results show that, at the system scale, a hexagonal packing exhibit a more heterogeneous inter-particle force distribution than a square packing does; At the particle scale, for both packing lattices, preliminary analysis shows the consistent coexistence of outliers (i.e., softer disks sustaining larger forces while stiffer disks sustaining smaller forces) in comparison to their homogeneous counterparts, which implies the existence of nonlocal effect. Further analysis on the portion of outliers and on spatial contact force correlations suggest that the hexagonal packing shows more pronounced nonlocal effect over the square packing under small mechanical heterogeneity. However, such trend is reversed when assemblies becomes more mechanically heterogeneous. Lastly, we confirm that, in the absence of particle reorganization events, contact friction merely plays the role of packing stabilization while its variation has little effect on inter-particle forces and their distribution.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Temperature-dependent charge barrier height of amorphous germanium contact detector

The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge contacts deposited on the detector surface is crucial to suppress the leakage current of the detector in order to achieve a low-energy detection threshold and high-energy resolution. The temperature-dependent CBH of a-Ge contacts for three Ge detectors is analyzed to study the bulk leakage current (BLC) characteristics. The detectors were fabricated at the University of South Dakota using homegrown crystals. The CBH is determined from the BLC when the detectors are operated in the reverse bias mode with a guard-ring structure, which separates the BLC from the surface leakage current (SLC). Here the results show that CBH is temperature dependent. The direct relation of the CBH variation to temperature is related to the barrier inhomogeneities created on the interface of a-Ge and crystalline Ge. The inhomogeneities that occur at the interface were analyzed using the Gaussian distribution model for three detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts

A tunneling atomic layer deposited (ALD) AlO x layer was inserted in a Si|SiO x |AlO x |MoO x |metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky barrier height. ALD AlO x provides a synthesis-tunable fixed charge and can provide excellent field effect passivation at the SiO x |AlO x interface. A large (>1 × 10 12 q.cm –2 ) negative fixed charge density was expected to decrease Schottky barrier height on p-type silicon and increase Schottky barrier height on n-type silicon by up to 0.4 eV based on an electrostatic model. Fixed charge density and interface trap state density were measured using a thick layer of AlO x in metal oxide semiconductor capacitor structures (MOSCAPs); Schottky barrier height and specific contact resistivity were measured using a tunneling-active layer of AlO x in contacted structures with MoO x . In some samples, HfO x interface layers were inserted between AlO x and silicon to quench the fixed negative charge. The Schottky barrier height was found to vary with processing conditions but did not have a strong correlation with expected fixed charge density. Here, while fixed charge may play a role in determining the Schottky barrier height, other parameters also have significant affect. Further work is needed to minimize contact resistivity and elucidate other factors impacting the Schottky barrier height.

14 SOLAR ENERGY↗
DOE OSTI2020

CO 2 –Brine Contact Angle Measurements on Navajo, Nugget, Bentheimer, Bandera Brown, Berea, and Mt. Simon Sandstones

In this study, contact angles were measured for CO 2 bubbles on six different sandstones (Navajo, Nugget, Bentheimer, Bandera Brown, Berea, and Mt. Simon) that could potentially represent properties of CO 2 storage depositional environments. The impacts of pressure and temperature were studied by focusing on the CO 2 phase behavior in three different scenarios: gaseous, liquid, and supercritical conditions. Despite controlling the sample preparation and cleanliness, CO 2 -brine equilibration conditions, and pressure and temperature, there were inconsistencies in contact angle trends that could largely be attributed to natural sample heterogeneity resulting from localized variations in topography, surface roughness, and mineral composition across the surface. Despite these variations, the analysis of 298 measurements from this study showed that 81% of the contact angles were below 40° representing strongly water-wet to (moderately) water-wet behaviors. Also, 17.3% of the measurements were between 40° and 60° (weakly water-wet) and primarily belonged to small CO 2 bubbles (< 500 μm) that were heavily impacted by localized surface heterogeneity in natural sandstone samples. Additionally, only 1.7% of the measurements had angles greater than 60° and could be classified as CO 2 -wet behavior, but these measurements occurred on extremely small bubbles (100-200 μm) that were very dependent on localized surface heterogeneity. While some of the detailed physics of the CO 2 -brine-sandstone interface is still poorly understood, from an application standpoint, the sandstones of this study were best characterized as strongly water-wet to (moderately) water-wet.

03 NATURAL GAS↗
DOE OSTI2024

Low Resistance Contact to P-Type Monolayer WSe 2

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. Here, in this study, we develop a charge-transfer doping strategy with WSe 2 /α-RuCl 3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 10 13 cm -2 can be achieved in the WSe 2 /α-RuCl 3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe 2 transistors with an on-current of 35 μA·μm -1 and an I ON /I OFF ratio exceeding 10 9 at room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2025

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗
DOE OSTI2012

Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing

Ti Ohmic contacts to relatively highly doped (1 Multiplication-Sign 10{sup 18} cm{sup -3}) n-type 4H-SiC have been produced, without high temperature annealing, by means of low temperature electronic cyclotron resonance microwave hydrogen plasma pre-treatment (HPT) of the SiC surface. The as-deposited Ti/4H-SiC contacts show Ohmic properties, and the specific contact resistance obtained is as low as 2.07 Multiplication-Sign 10{sup -4}{Omega}{center_dot}cm{sup 2} after annealing at low temperatures (400 Degree-Sign C). This is achieved by low barrier height at Ti/SiC interface, which could be attributed to decrease of surface states density by the HPT releasing Fermi level pinning, and to band-gap narrowing, image-force, and thermionic-field emission at high doping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n{sup +} metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (R{sub C}) and sheet resistance (R{sub sh}) as a function of corresponding GaN free carrier concentration (n) were measured. Very low R{sub C} values (<0.09 {Omega} mm) were obtained, with a minimum R{sub C} of 0.035 {Omega} mm on a sample with a room temperature carrier concentration of {approx}5 Multiplication-Sign 10{sup 19} cm{sup -3}. Based on the systematic study, the role of R{sub C} and R{sub sh} is discussed in the context of regrown n{sup +} GaN ohmic contacts for GaN based high electron mobility transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Ohmic contact on n-type Ge using Yb-germanide

Poor ohmic contact by Fermi-level pinning to valence band (E{sub V}) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 Degree-Sign C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Advantages of flattened electrode in bottom contact single-walled carbon nanotube field-effect transistor

We fabricated single-walled carbon nanotube (SWNT) field-effect transistor (FET) devices on flattened electrodes, in which there are no height difference between metal electrodes and the substrate. SWNT-FET fabricated using bottom contact technique have some advantages, such that the SWNTs are free from electron irradiation, have direct contact with the desired metal electrodes, and can be functionalized before or after deposition. However, the SWNTs can be bent at the contact point with the metal electrodes leading to a different electrical characteristic of the devices. The number of SWNT direct junctions in short channel length devices is drastically increased by the use of flattened electrodes due to strong attractive interaction between SWNT and the substrate. The flattened electrodes show a better balance between their hole and electron mobility compared to that of the non-flattened electrodes, that is, ambipolar FET characteristic. It is considered that bending of the SWNTs in the non-flattened electrode devices results in a higher Schottky barrier for the electrons.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Point contacts at the copper-indium-gallium-selenide interface—A theoretical outlook

For a long time, it has been assumed that recombination in the space-charge region of copper-indium-gallium-selenide (CIGS) is dominant, at least in high efficiency solar cells with low band gap. The recent developments like potassium fluoride post deposition treatment and point-contact junction may call this into question. In this work, a theoretical outlook is made using three-dimensional simulations to investigate the effect of point-contact openings through a passivation layer on CIGS solar cell performance. A large set of solar cells is modeled under different scenarios for the charged defect levels and density, radius of the openings, interface quality, and conduction band offset. The positive surface charge created by the passivation layer induces band bending and this influences the contact (CdS) properties, making it beneficial for the open circuit voltage and efficiency, and the effect is even more pronounced when coverage area is more than 95%, and also makes a positive impact on the device performance, even in the presence of a spike at CIGS/CdS heterojunction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗